1 4 .

3 Intrinsic Semiconductor

8. C and Si both have same lattice structure; having 4

electrons in each. However, C is insulator
bonding semiconductor. This is
whereas Si is intrinsic
because
in of C the valence band is not completely
(a) case

filled at absolute zero temperature

of C the conduction band is partly filled
(b) in case

even at absolute zero temperature

C lie in
(c) the four bonding electrons in the case of
the second orbit, whereas in the case of Si they
lie in the third
(d) the four bonding electrons in the case of C lie
in the third orbit, whereas for Si they
lie in the
fourth orbit. (2012)

14.4 Extrinsic Semiconductor

10. For a p-type semiconductor, which of the following
statements is true?
(a) Electrons are the majority carriers and
pentavalent atoms are the dopants.
 trivalent
(b) Electrons are the majority carriers and
atoms are the dopants.
(c) Holes are the majority carriers and trivalent
atoms are the dopants.
(d) Holes are the majority carriers and pentavalent
atoms are the dopants. (NEET 2019)
11. In a n-type semiconductor, which of the following
statement is true?
(a) Holes are minority carriers and pentavalent
atoms are dopants.
(6) Holes are
majority carriers and trivalent atoms
are dopants.
(c)Electrons are majority carriers and trivalent
atoms are dopants.
(d) Electrons are minority carriers and pentavalent
atoms are dopants. (NEET 2013)
12. If a small amount of antimony is added to
germanium crystal
(a) it becomes a p-type semiconductor
(6) the antimony becomes an acceptor atom
(c) there will be more free electrons than holes in
the semiconductor
(d) its resistance is increased. (2011)
13. Pure Si at 500 K has equal number of electron (n,)
and hole concentrations of 1.5 x 10'6
(n,) m*
Doping by indium increases n, to 4.5 x 10 ms. The
doped semiconductor is of
(a) p-type having electron concentration
n,= 5 x 10° m3
(b) n-type with electron concentration
n=5 x 1022 m3
c)p-type with electron concentration
n= 2.5 x 1010 m-3
(d) n-type with electron concentration
n,= 2.5 x 1023 m-3
(Mains 2011)
14.5 p-n Junction
21. The increase in the width of the depletion region in
ap-n junction diode is due to
(a) forward bias only
(b) reverse bias only
(c) both forward bias and reverse bias
(d) increase in forward current (NEET 2020)
22. The barrier potential of a p-n junction depends on
(1) type of semiconductor material
(2) amount of doping
(3) temperature
Which one of the following is correct?
(a) (1) and (2) only (b) (2) only
(c) (2) and (3) only (d) (1), (2) and (3) (2014)
diffuse from the
23. In an unbiased p-n junction, holes
because of
p-region to n-region
he attraction of free electrons of n-region
(a)
hole concentration in p-region than
(b) the higher
that in n-region
 concentration of electrons in the
(c) the higher
n-region than that in the p-region
(d) the potential difference across the p-n junction.
(Karnataka NEET 2013)

14.6 Semiconductor Diode

27. In ap-n junction diode, change in temperature due to

heating
resistance
(a) affects only reverse
(b) affects only forward resistance
(c) does not affect resistance of p-n junction
(d) affects the overall V - I characteristics of p-n

junction. (NEET 2018)

28. Which one of the following represents forward bias
diode?
-3V
w-

(b) w 2
R 5V

- ww

() (NEET2017,2006)
29. The given circuit has two ideal diodes connected as
shown in the figure. The current flowing through
the resistance R, will be

22
AN
ww-

7D
10 V .

R,2
(a) 2.5 A (b) 10.0 A
(c) 1.43 A (d) 3.13 AA

(NEET-II 2016)|
30. Consider the junction diode as ideal. The value of
current flowing through AB is
B

ww
4 V -6 V

(a) 10-' A (b) 10-3 A

(c) 0A (d) 10-2 A (NEET-/ 2016)
31. In the given figure, a diode D is connected to an
external resistance R = 100 2 and an e.m.f. of 3.5 V.
If the barrier potential developed across the diode is
0.5 V, the current in the circuit will be
100 2
(a) 20 mA
(b) 35 mA
(c) 30 mA

(d) 40 mA (2015)
32. If in ap-n junction, a square input signal of 10 V is
applied, as shown,
+5 V

RL
-5V -

then the output across R; will be

10V

(c) (d)
-10V.
(2015 Cancelled)
33. Two ideal diodes are connected to a battery as shown
in the circuit. The current supplied by the battery is
102

(a) 0.75 A (b) zero

()0.25 A (d) 0.5 A (2012)
34. In forward biasing of the p-n junction
(a) the positive terminal of the battery is connected
to p-side and the depletion region becomes
thick.
(6) the positive terminal of the battery is connected
to n-side and the depletion region becomes
thin.
()the positive terminal of the battery is connected to
n-side and the depletion region becomes thick.
(d) the positive terminal of the battery is connected
to p-side and the depletion region becomes
thin. (2011, 1988)
35. In the following figure, the diodes which are forward
biased, are
+10 V
(A) R
w
+5V
R
(B) o W
-10 V

(C)
-12 V
R

-5V

(D) R

+5 V

(a) (A), (B) and (D) (b) (C) only

(c) (C) and (A) (d) (B) and (D)
(Mains 2011)
14.8) Special Purpose p-n Junction Diodes
52. An LED is constructed from a p-n junction
diode using GaAsP. The energy gap is 1.9 eV. The
wavelength of the light emitted will be equal to

(a) 10.4 x 10-26 m (b) 654 nm

(c) 654 A (d) 654 x
10-l m

(Odisha NEET 2019)

53. The given graph represents V-I
characteristic for a semiconductor
device. Which of the following
statement is correct
(a) It is V-I characteristic for solar cell where, point
A represents open circuit voltage and point B
short circuit current.
(b) It is for a solar cell and points A and B
represent open circuit voltage and current,
respectively.
(c) It is for a photodiode and points A and B
represent open circuit voltage and current,
respectively.
(d) It is for a LED and points A and B represent
open circuit voltage and short circuit current,
respectively. (2014)
54. A Zener diode, having breakdown voltage equal to
15V, is used in a voltage regulator circuit shown in
figure. The current through the diode is
o www
250 2
20 V 15 V 1 k2

(a) 5 mA (b) 10 mA
15 mA (d) 20 mA (Mains 2011)
14.9 Digital Electronics and Logic Gates
59. For the logic circuit shown, the truth table is

A
B-

ABY 4BY
(b)
L01

0 01
(c)0
1 00

(NEET 2020)
50. +6 V
R

LED ()

The correct Boolean operation represented by the

circuit diagram drawn is
(a) NOR (b) AND
(c) OR (d) NAND (NEET 2019
61. In the combination of the following gates the output
Y can be written in terms of inputs A and B as

(a) A B (b) A B+ B
(c) A B+A-B (d) A+B (NEET 2018)
62. The given electrical network is equivalent to

(a) OR gate (b) NOR gate

(c) NOT gate (d) AND gate
(NEET2017)
63. What is the output Yin the following circuit, when all
the three inputs A, B, Care first 0 and then 1 ?
A
B P-
(a) 0, 1 (6) 0,0 (c) 1,0 (d) 1,1
(NEET-II 2016)
64. To get output 1 for the following circuit, the correct
choice for the input is

(a) A = 1, B =1, C=0 (b) A = 1, B =0, C= 1

(c) A = 0, B=1, C=0 (d) A = 1,B = 0, C= 0
(NEET-1 2016, Mains 2012, 2010)
65. The output (X) of the logic circit shown in figure
will b
X

(a) X=A.B (6) X=A+B

(c) X=A.B (d) X=A.B (NEET 2013)
66. The output from of a
NAND gate is divided into two
in parallel and fed to another
NAND gate. The resulting gate isa
DD:
(a) AND gate (b) NOR gate
() OR gate (d) NOT gate
(Karnataka NEET 2013)

67. The figure shows A-

a logic circuit with two
inputs A and B and the
output C. The voltage wave U...
forms across A, B
and Care as given. The logic circuit gate is
(a) OR gate (b) NOR gate
() AND gate (d) NAND gate (2012)
68. Symbolic representation of four logic gates are
shown as

(1)

Pick out which ones are for AND, NAND and NOT
gates, respectively
(a) (ii). (ii) and (iv) (b) (ii), (i) and (i)
(c) (ii). (i) and (iv) (d) (ii), (iv) and (ii)
(2011)
14.A Junction Transistor
80. For transistor action, which of the following
statements is correct?
(a) Base, emitter and collector regions should have
same doping concentrations.
 (b) Base, emitter and collector regions should have
same size.
()Both emitter junction as well as the collector
junction are forward biased.
(d) The base region must be very thin and lightly
doped. (NEET 2020)
81. In the circuit shown in the figure, the input voltage
V, is 20 V, VBE =0 and Vce = 0. The values of I Ic
and are given by
20V

R 4k

w
V 500 k2

(a) I = 40 uA, I¢ = 10 mA, ß = 250

25 jHA, I¢= 5 mA, 200
(6) =
ß =

(c) Ip=20 uA, I¢= 5 mA, B = 250

(d) 40 LA, I¢ = 5 mA, ß= 125 (NEET 2018)
82. In a common emitter transistor amplifer the
audio signal voltage across the collector is 3 V. The
resistance of collector is 3 k2. If current gain is 100
and the base resistance is 2 k2, the voltage and
power gain of the ampliher is
(a) 15 and 200 (b) 150 and 15000
(C)20 and 2000 (d) 200 and 1000
(NEET 2017)
83. For CE transistor amplifier, the audio signal voltage
across the collector resistance of 2 ks2 is 4 V. If the
current amplihcation factor of the transistor is 100
and the base resistance is 1 k2, then the input signal
voltage is
(a) 10 mV (b) 20 mV
(c) 30 mVV (d) 15 mV (NEET-II 2016)
84. A npn transistor is connected in common emitter
configuration in a given amplifier. A load resistance
of 800 S2 is connected in the collector circuit and
the voltage drop across it is 0.8 V. If the current
amplification factor is 0.96 and the input resistance
of the circuit is 192 2, the voltage gain and the
power gain of the amplifier will respectively be
(a) 4,4 (6) 4, 3.69
(c) 4, 3.84 (d) 3.69, 3.84
(NEET-I 2016)
85. The input signal given to a CE amplifier having

a voltage gain of 150 is

V, =2cos|15t+The
corresponding output signal will be

(a) 2c0s 15t+ (b) 300cos 15t

 (d) 75cos 15t
(c) 300cos 15t+
86. Ina common emitter (CE) amplifier having a voltage
gain G, the transistor used has transconductance
0.03 mho and current gain 25.If the above transistor
1s replaced with another one with transconductance
0.02 mho and current gain 20, the voltage gain will
be

a)G (b)G (c)G (d) 1.5G

(NEET 2013)
87. One way in which the operation of a n-p-n transistor
differs from that of a p-n-p
(a) The emitter junction injects minority carriers
into the base region of the p-n-p
(b) The emitter injects holes into the base of the
p--p and electrons into the base region of n-p-n
(c The emitter injects holes into the base of n-p-n
(d) The emitter junction is reversed biased in n-p-n
(Karnataka NEET 2013)
88. In a CE
transistor amplifier, the audio signal voltage
across the collector resistance of 2 k2 is 2 V. If the
base resistance is 1 k2 and the current amplification
of the transistor is 100, the input signal voltage is
(a) 0.1 V (6) 1.0 V
(c) ImV (d) 10 mV (2012)
89. Transfer characteristics [output voltage (V,) versus
input voltage (V)] for a base biased transistor in CE
configuration is as shown in the
VtI
figure. transistor as
For using a switch,
it is used
(a) in region II
(b) both in region () and (II)
() in region II
(d) in region (2012)
90. The input resistance of a silicon transistor is 100 S2.
Base current is changed by 40 LA which results in a
change in collector current by 2 mA. This transistor
is used as a common emitter amplifier with a load
resistance of 4 ks2. The voltage gain of the amplifier is
(a) 2000 (b) 3000
(c) 4000 (d) 1000 (Mains 2012)
91. A transistor is operated in common emitter
configuration at Vc=2 V such that a change in the
base current from 100 uA to 300 uA produces a
change in the collector current from 10 mA to 20
mA. The current gain is
(a) 50 ( b ) 75 (C) 100 (d) 25 (2011)