Plasmonic Crystals with Tunable Band Gaps in the Grating Gate Transistor Structures

G. R. Aizin1,†, J. Mikalopas1, and M. Shur2,3

1
Kingsborough College, The City University of New York, Brooklyn, New York 11235, USA
2
Rensselaer Polytechnic Institute, Troy, New York 12180, USA
3
Electronics of the Future, Inc., Vienna, VA 22181, USA

We developed a hydrodynamic model of plasmonic crystals formed in the current-driven grating gate transistor
structures. The model demonstrates that the quality factor of plasmonic resonances could be increased by using
ungated regions with high electron densities connecting multiple plasmonic cavities. The analytical and numerical
calculations of the EM radiation absorption by the band plasmons show that the drive current makes all plasma modes
optically active by breaking the symmetry of the plasma oscillations. This effect results in splitting plasmon resonant
absorption peaks revealing the gaps in the plasmonic band spectrum tunable by current. The analyzed design could
achieve resonant behavior at room temperature for plasmonic crystals implemented in various material systems,
including graphene, III-V, III-N materials, and p-diamond. We argue that the resulting double-peak spectrum line in
the terahertz range also facilitates the absorption at the gap frequency, typically in microwave range. Power pumping
at the gap frequency enables excitation of the gap plasmons, promoting frequency conversion from microwave to THz
ranges. The flexibility in the length of the ungated region for the investigated structures allows for an effective
coupling with THz radiation, with the metal grating acting as a distributive resonant antenna. The applications of the
presented results extend to THz communication systems, THz sensing and imaging, frequency conversion systems,
and other advanced THz plasmonic devices.
cavity transistor are better coupling with an external
EM wave [7] and signal amplification due to
I. INTRODUCTION. coherence of the plasma oscillations in individual
elementary cells [1] resulting in more sensitive
The lateral plasmonic crystals are formed in two- detectors and efficient THz sources.
dimensional (2D) electron channels of the field-effect Systematic studies of the plasmonic crystal effects
transistors periodically modulated in space when the in periodically modulated TeraFETs began more than
electron mean free path is longer than several a decade ago [7-13]. Plasmonic band structure in the
modulation periods [1]. This condition can be met finite plasmonic crystal formed in the TeraFET with
even at room temperature in advanced semiconductor periodically modulated electron density was
material systems with long mean free path such as demonstrated experimentally [8] and described
AlGaAs/InGaAs [2], AlGaN/GaN [3], p-diamond [4] theoretically including Tamm plasmonic states formed
or in graphene [5]. Scaling down the dimensions of at the edges of the finite plasmonic crystal [9].
semiconductor devices below 10 nm stimulated Plasmonic crystals in graphene structures with
theoretical and experimental research of resonant periodically modulated geometry were studied in [10-
plasmonic crystals in periodically modulated 2D 12].
electron systems [6-24]. In the presence of a DC current bias, plasmonic
Periodic modulation of the 2D electron channel band spectra are modified [13], and plasmonic crystals
induces gap openings in the plasmon energy spectrum. develop plasmonic boom instability if the electron
This effect was first described theoretically in [25] and drift velocity exceeds the plasma velocity [14]. This
confirmed experimentally in [26]. Recently it got effect is similar to the sonic boom instability in
renewed interest due to its potential applications in the acoustics [29]. The THz emission due to plasmonic
sub-THz and THz technology [6]. Frequencies of 2D boom effect was observed in the grating gate
plasmons in the THz band are easily tunable in the TeraFETs [15]. Driven by DC current bias, plasmonic
THz field-effect transistors (TeraFETs) by the gate crystals may also develop Dyakonov-Shur type of
bias or illumination, and the wide-ranging applications instability due to current induced asymmetry in the
of the plasmonic TeraFETs in the THz electronics as plasmonic crystal elementary cell [16] and/or the built-
compact tunable detectors and sources of the THz EM in asymmetry of the elementary cell [17]. Recently, an
radiation are anticipated [27, 28]. The advantages of amplified mode switching (AMS) effect has been
plasmonic crystal over plasmons in a single plasmonic observed in the current biased

†
[email protected]

1
Fig.1 (a) Schematics of the current biased TeraFET structure irradiated by an external EM wave at normal incidence; (b)
Equivalent electric circuit representing TeraFET’s 2D electron channel.

interdigitated graphene plasmonic crystals [18]. It excitation of the gap plasmons and facilitate tunable
occurs at certain critical value of the ratio of drift microwave to THz and THz to microwave conversion.
velocity over plasma velocity (the Mach number) The paper is organized as follows. Section II
when the plasma resonant peak experiencing redshift describes the model approach. Section III presents
with increasing current changes to the blue shifting theoretical analysis and the numerical results for the
peak. The AMS effect was explained by switching absorption spectra, and Section IV has discussion of
between crossed plasmonic modes with different the results and possible applications.
effective plasmonic damping [19].
Absorption of impinging THz EM radiation in the II. THEORETICAL MODEL
plasmonic crystal can be used for the detection of THz
signals. This effect was recently demonstrated We consider transistor design shown schematically
experimentally in the grating-gated AlGaN/GaN in Fig. 1a. The 2D electron channel of the transistor
quantum well nanostructures [20] where absorption consists of periodically repeated gated and ungated
peaks tunable by the gate voltage were observed and sections with lengths and , respectively. The
explained by the formation of a plasmonic crystal. The equilibrium 2D electron density in the gated regions,
detailed theory of absorption of the THz radiation in , is controlled by the gate voltage while that in the
the plasmonic crystals with modulated electron ungated sections, , remains constant. The system is
density controlled by the gate was developed in [21, irradiated by the EM wave of frequency at normal
22]. incidence. A DC current bias between the source and
In this paper, we consider plasmonic crystals in the drain contacts of the transistor induces the constant
the grating gated TeraFET in which the unit cell drift velocity in the gated sections.
consists of gated and ungated regions with electron The EM wave can excite collective electron plasma
density and the plasma frequency in the ungated oscillations in the channel if the frequency matches
regions much larger than that in the gated ones. the plasma eigenfrequencies and ≫ 1 where is
Therefore, at frequencies close to the frequency of the electron momentum relaxation time due to random
gated plasmons plasma oscillations in the ungated scattering. The distinct feature of the suggested design
regions are suppressed, and the effect of the ungated is an assumption that ≪ which can be easily
region on the band plasmons can be represented by a achieved using the gate voltage tuning. In this case, the
frequency-dependent impedance only. The formation plasma eigenfrequencies in the ungated sections of the
of a plasmonic crystal in such structures only requires channel are well separated from gated plasma modes
the electron mean free path in the gated region to having much smaller frequencies due to the difference
exceed its length. There is no such a restriction on the in the equilibrium electron densities and softening of
length of the ungated regions as long as decoupling of the plasma modes under the gate [30]. This model of
the gated and ungated plasmons is maintained. We the grating-gated electron channel was recently used
show that driving DC currents induce the tunable for theoretical studies of the plasmonic crystal effect
peaks in the absorption spectrum of such plasmonic on the Dyakonov-Shur instability [23] and formation
crystals. These peaks are due to the excitation of the of the Tamm states in a finite plasmonic crystal [24].
band plasmons at the top and the bottom of the We consider external EM radiation at frequencies
plasmonic bandgaps thus demonstrating the close to the frequencies of the gated plasma modes. At
fundamental feature of the band energy spectrum. The these frequencies, the gated sections of the electron
positions and intensity of these absorption peaks channel behave as plasmonic waveguides with
depend on the Mach number and on the ratio of the ungated sections connecting the neighboring
electron densities in the gated and ungated regions and waveguides [23]. A normally incident external EM
are controlled by the applied gate and drain bias wave linearly polarized in the direction perpendicular
voltages. This effect could enable to gate fingers (x-axis) is modulated by the grating gate

2
and produces periodic electric field in the 2D channel:
( , ) = ( )exp ( ) where ( )= ( + ) ( , )= + − ∗(
and = + is the grating period. In this model, / )
(3)
the transistor electron channel can be represented by ( , )= ( + )
the equivalent electric circuit diagram shown in Fig.
1b. In this diagram, the gated plasmonic waveguides where constant coefficients , are determined by the
driven by an external AC electric field are represented boundary conditions. Wave vectors , in Eqs. (3) are
by the transmission lines with distributed AC voltage
determined from the quadratic determinantal equation
sources ( ) with ( ) = ( + ). The
for homogeneous ( = 0) system in Eq. (2):
connecting ungated sections are described by a lumped
impedance ℛ + ℒ where ℒ = ∗ / and ( − )( − − / )− =0 (4)
ℛ = ℒ/ are kinetic inductance and resistance,
respectively, of the ungated section of width . Here,
∗
is an effective electron mass, and − is electron Here = / ∗ is the plasmon velocity in the
charge. This RL-model is adequate as long as plasma gated section of the channel. In expression for ( )
oscillations in the ungated sections remain sufficiently in Eq. (3) the first term describes plasmonic
uncoupled from the excited gated plasma modes [23]. contribution and the second one accounts for the
In the following, we consider only the homogeneous Drude contribution to the AC current and in the gated
component of an external AC electric field in the gated channel.
sections assuming weak modulation by the grating so In the ungated sections, the electric current is
that ( , ) = exp ( ). (See more detailed conserved: ( ) = ( + ), and the electric
discussion of this approximation in [21].) current and voltage obey the Ohm’s law: ( ) −
Plasma oscillations in the gated sections of the ( ) (ℛ + ℒ) = ( + ) where ( )=
channel can be described by the hydrodynamic ( ) + ( ) is the total electric potential in the gated
equations (equation of continuity and the Euler channel. If only homogeneous component of an
equation) provided that electron-electron interaction is external AC electric field in the gated channel is
the dominant source of scattering in the electron retained, we have (0) − ( ) = . Boundary
system. These equations linearized for the small conditions for solutions (3) follow from these
fluctuations of the electron density ( , ) and equations and the Bloch conditions in the periodic
hydrodynamic velocity ( , ) are structure: ( + ) = ( ) and ( + )=
( ) where ∈ [− / , / ] is the Bloch
+ + =0 wave vector. In this model, the boundary conditions
(1) take the form
+ + =− ∗ − ∗
( )= (0) (5)
Here, induced electric potential is linked to the
fluctuation of the electron charge density in the ( )− ( ) (ℛ + ℒ) = (0) + (6)
channel as =− / where = / is the
capacitance per unit area between the channel and the Substituting Eq. (3) into Eqs. (5) and (6) we obtain the
gate, and are the dielectric constant and the following system of equations for the unknown
effective thickness of the gate dielectric barrier coefficients , :
including the finite thickness of the 2D electron layer,
respectively. ( − ) +( − )
Searching solutions of Eqs. (1) in the form = ∗(
(1 − ) (7)
/ )
( )= ( ) (− + ) we obtain

( − ) − =0 −
(2) ( − )−
∗ − − − =− ∗

−
The system of linear algebraic equations (2) yields + ( − )−
expressions for the AC electric current density =
− ( + ) and induced electric potential
in the gated channel: = + (8)

3
where = / is the modulation factor. where the first term describes the EM power absorbed
Determinantal equation of this system yields the in the gated section of the elementary cell, and the
plasma dispersion equation for the plasmonic crystal second one accounts for the EM power absorbed in the
formed in the transistor channel. In the “clean” limit ungated section.
( → ∞) we obtain In the next section, we solve plasmon hydrodynamic
equations and calculate the absorption of the EM
cos( + ) − cos + (1 − ) sin
2 radiation by the band plasmons demonstrating tunable
=0 (9) resonant behavior.
Here =( )
and = is the Mach number.
The last equation agrees with the dispersion equations
derived in Refs. [23, 24] if the latter equations are
taken in the same limit as Eq. (9).
Fig. 2 presents the numerical solution of Eq. (9).
The plots of plasma frequency = /2 as a function
of the Bloch vector shown in Fig. 2 demonstrate the
plasmonic band spectrum in the first Brillouin zone at
several values of the Mach number. Periodic
modulation of the electron density results in the gap
opening in the plasmonic spectrum. Finite DC bias
shifts positions of the gaps in the k-space and changes
the gap size at any given value of the Bloch vector. In Fig. 2 Plasmonic band spectrum in the first Brillouin zone at
this calculation, we used the values of parameters Mach numbers = 0, 0.05, and 0.1 for InGaAs-based
periodic semiconductor structures with period = 200 ,
typical for the InGaAs-based semiconductor
the gate dielectric thickness = 25 , and electron
structures: ∗ = 0.042 ( is free electron mass), densities in the gated and ungated sections 1 × 10 m-2 and
= 12.9, = = 100 nm, = 25 nm, = 1 × 10 m-2, respectively. All other parameters are defined
1 × 10 m-2, and = 0.1. At these values of the in the text.
material parameters the plasma wave velocity in the
gated sections ≈ 3.8 × 10 m/s so that the Mach III. RESULTS
numbers ≤ 0.1 used in Fig. 2 correspond to the drift
velocities well below the saturation values. As seen Normally incident EM wave couples to plasmons at
from Fig. 2, the plasmonic band structure becomes the center of the Brillouin zone, i.e. at = 0 in Fig.
asymmetrical for finite Mach numbers. The 2. Plasmonic energy spectrum at the center of the
asymmetry increases with M with the band gap Brillouin zone can be found analytically from Eq. (9)
becoming indirect and dependent on M. at small Mach numbers ≪ 1 and assuming strong
All characteristic features of the plasmonic band modulation ≪ 1. In this case, the perturbative
spectrum can be probed using absorption of an solution of Eq. (9) in the lowest non-vanishing order
external EM radiation by the band plasmons. in these small parameters yields two series of roots
Normally incident EM wave interacts with the band , , = 1,2, …:
plasmons at the center of the first Brillouin zone at =
0. Average electromagnetic power absorbed in the 2 4
= + + −
crystal elementary cell (0 ≤ ≤ + ) per unit
channel width can be found as
≡ +∆ (11)
∗( )
= ∫ ( ) − + | (0)| ℛ
= − + +
(10)
≡ +∆ (12)

4
Fig. 3 Electromagnetic power P per unit channel width absorbed in the elementary cell of the InGaAs plasmonic crystal as a
function of the frequency f of an external EM radiation at two different values of the electron mobility : (a)-(c) = 8 m2/Vs;
(d)-(f) = 2 m2 /Vs and different values of the Mach number = 0, 0.05, 0.1. All other parameters are defined in the text.

These roots describe plasmon energies at the top ( )=( + )

( ) and the bottom ( ) boundaries of the energy
= sin cos − (13)
band gaps opening in the plasmonic crystal spectrum ∗ ( )( )
near the frequencies =2 / . It is worth
noting that the positions of the boundaries as well as ( )= ( + )
the size of the band gap ∆ = ∆ − ∆ depend on
the modulation factor and the Mach number and, = ( )( )
sin sin − (14)
therefore, are controllable by the gate voltage and DC
bias applied to the transistor. Using Eqs. (13) and (14) in Eq. (10) we obtain
The closed-form analytical solutions for plasmonic plasmonic contribution to the absorbed EM power
current and voltage distributions as well as the EM ( ) at values of close to :
power absorption by the plasmons at the center of the
Brillouin zone can be readily obtained in the resonant ( )=
regime at ≫ 1. In this limit, Eq. (4) yields solutions /
for the wave vectors , = ( − /2 )/ ± ∗ [( ) ][( ) ]
(15)
∆ / ∆ /
corresponding to plasma oscillations propagating in
the direction of the DC drift and in the opposite Eq. (15) describes the absorption of external EM
direction, respectively. Such an addition of the plasma radiation by the band plasmons near the plasmonic
and drift velocity was experimentally confirmed in resonances in the crystal elementary cell. This
[31]. These solutions are used to find coefficients , absorption mostly occurs in the gated section of the
in Eqs. (7), (8) and plasmonic contributions to the elementary cell as the contribution of the second term
current and voltage in the gated sections of the channel in Eq. (10) into absorption is times smaller than that
in Eq. (3). After some cumbersome but of the first term.
straightforward algebra we arrive to the following It follows from Eq. (15) that in the absence of a DC
expressions for the complex plasmonic current ( ) drift ( = 0) when ∆ = 0 the resonant plasmonic
and induced voltage ( ) in the gated sections absorption occurs only at the bottom boundary of the
(0 ≤ ≤ ) near the m-th plasmonic resonance when plasmonic band gap while the plasmonic mode at the
= − ≪ , ≪ 1, and Ω = − /2 : top boundary remains optically inactive. These modes
are the so called bright and dark plasma modes [7] with

5
Fig. 4 Spatial distributions of the voltages (a) and the currents (b) in the gated sections of the crystal elementary cell at two
different Mach numbers = 0, 0.1 demonstrating excitation of the plasma oscillations at resonant frequencies indicated by
dashed lines along f-axis. At = 0 plasmons are excited only at the bottom of each energy gap while at finite M plasmons are
excited at both boundaries of the energy gaps. In this calculation the mobility = 8 m2/Vs was used. All material and geometric
parameters are the same as in Figs. 2 and 3.

different absorption behavior resulting from the external EM radiation in the frequency interval
different symmetry of the charge and field spanning across first two plasmonic band gaps in Fig.
distributions in these modes and relevant selection 2. Figs. 3a through 3f show the evolution of the
rules [21]. An applied DC bias breaks the symmetry of absorption spectrum with increasing Mach number for
the dark modes, and two peaks corresponding to the InGaAs based transistor with mobilities = 8 m2/Vs
plasmon absorption at both boundaries of the (Figs. 3a-3c) and = 2 m2/Vs (Figs. 3d-3f) typical
plasmonic band gap should appear in the absorption for measurements at cryogenic and room
spectrum. temperatures, respectively. In this calculation we used
To describe these features, we numerically solved the value of = 1 × 10 V/m, which is an order of
Eqs. (7) - (9) with boundary conditions in Eqs. (5), (6) magnitude estimate of the electric field achieved at
and calculated the power absorption spectrum ( ) sub-mW range of impinging THz power for available
from Eq. (10) free from the restrictions imposed by the THz systems [32]. All other parameters are the same
perturbation theory used in the analytical solution. In as in Fig. 2. As seen from Fig. 3, the additional
Fig. 3, we plot the EM power per unit channel width absorption peak emerges on the high frequency
absorbed in the elementary cell of the plasmonic shoulder of the main absorption peak at ≠ 0 and
crystal as a function of frequency of the increases in amplitude with increasing . This peak is

6
 of the energy gaps strongly depend on . At larger
( ≈ 0.3) the absorption peaks belonging to different
band gaps approach each other resulting in the mode
anti-crossings indicated in Fig. 5 by a dashed line
circle. These anti-crossings are accompanied by the
appearance of the bright and the dark modes as seen in
Fig. 5 and present another manifestation of the AMS
effect when the plasma resonant peak experiencing
redshift with increasing current changes to the blue
shifting peak [18, 19].
The presented results demonstrate that the
absorption spectrum of the current-biased plasmonic
crystal is rich in different features tunable by the
applied DC bias. These features are more pronounced
at cryogenic temperatures but persist up to the room
temperatures opening an opportunity for designing
frequency sensitive tunable detectors of the THz EM
radiation.

Fig. 5 Power absorption map in the ( , ) plane showing

evolution of the absorption peaks for the first two energy
IV. DISCUSSION AND CONCLUDING
band gaps with increasing Mach number M. Additional anti- REMARKS
crossings accompanied by the appearance of new bright and
dark modes occur when the absorption peaks belonging to We investigated a plasmonic crystal structure
the different band gaps approach each other, see the designed to optimize the quality factor of plasmonic
encircled anti-crossing corresponding to the AMS effect resonances by connecting the resonant gated regions
measured in [18]. via ungated regions with large electron densities and
elevated plasmonic frequencies decoupled from the
due to plasmonic absorption at the top boundary of the resonances in the gated regions. This design aims to
plasmonic band gap as discussed earlier in the text. achieve resonant behavior at room temperature across
The amplitudes of the peaks decrease with increasing various material systems, including graphene, III-V
scattering rates (lower mobilities) but the absorption and III-N semiconductor materials, and p-diamond
peaks are still well defined even at room temperatures. due to the short length of the individual gated
In the vicinity of plasma resonances, the absorption is plasmonic cavities compared to the electron mean free
almost entirely determined by the plasmons while the path. The flexibility in the length of the ungated region
Drude absorption is very small. Drude absorption allows the unit cell length to be chosen sufficiently
becomes prevalent when → 0 and is not seen in the long for an optimum coupling between the impinging
frequency scale of Fig. 3. THz radiation and the plasmonic crystal with the metal
In Fig. 4, we plot spatial distributions of the grating acting as a distributive resonant antenna
voltages (Fig. 4a) and the currents (Fig. 4b) in the tunable by choosing the appropriate length of the
gated section of the crystal elementary cell at different ungated regions.
frequencies and DC biases demonstrating excitation of A significant feature of the analyzed plasmonic
the plasma oscillations at resonant frequencies crystal spectrum is the mode anti-crossings with
indicated by the dashed lines on the plots. At = 0, tunable gaps in the plasmonic spectrum that could be
plasmons are excited at the bottom of the plasmonic modulated by the gate or the current biases. The
gap only while at finite plasma excitations appear spectrum of the plasmonic crystals with anti-crossings
at both boundaries of the plasmonic gap. Spatial is similar to that of the bilayer graphene [33] or the
distribution of the currents and voltages roughly narrow gap semiconductors [34]. Near the band
follows Eqs. (13) and (14). boundaries the spectrum becomes parabolic and could
In Fig. 5, the dissipated power is mapped in the be characterized by a plasmonic effective mass like
( , ) plane illustrating a high tunability of the that of a roton [35] and dependent on the gate and
plasmonic absorption by a DC bias. This figure shows current biases. At finite Mach numbers, the tunable
evolution of the absorption peaks for the first two gaps become indirect with this feature being more
energy band gaps when changes in the interval 0 ≤ pronounced at high Mach numbers.
≤ 0.5. The positions of the peaks as well as the size At finite Mach number plasma states become

7
optically active at both boundaries of the plasmonic impinging radiation angle and polarization, and
band gap. This opens an opportunity for excitation of galvanomagnetic effects. All these effects should be
the plasmons forming the gap using power pumping at much easier to realize for the proposed design
the gap plasmon frequency, i.e. transfer of power from allowing for the optimization of the unit cell length.
a lower to a higher frequency signal. This method can Implementing a plasmonic crystal increases the
potentially be used for the microwave to THz active area of a THz or sub-THz device by orders of
conversion. magnitude compared to a single plasmonic TeraFET.
At sufficiently large Mach numbers the plasmonic A large active area of the plasmonic crystal in
crystal could become unstable [16, 17, 23]. The comparison to a single plasmonic TeraFET makes it
plasmonic crystal design considered in this paper uniquely suited for gas, fluid, proximity, and
makes it easier to achieve the resonant conditions biomedical sensors. The commensurate increase in
required for such an instability because it does not sensitivity for detector applications and generated
require the resonant conditions for the ungated power for plasmonic THz oscillations makes
sections. In contrast to similar instabilities in a single plasmonic crystals to be prime candidates for 6G and
plasmonic FET, such an instability in a plasmonic beyond THz communication systems, the line-of-sight
crystal should be orders of magnitude more powerful. THz detectors, biomedical and industrial sensing and
This advantage of the analyzed design also applies to imaging, THz frequency conversion systems, and
the plasmonic boom instability that should occur for advanced plasmonic devices for radar, security, and
M>1 [14]. defense applications.
Other effects to be investigated include the
dependences of the plasmonic crystal response on the

[7] V. V. Popov et al., Resonant properties of the

[1] M. Shur, G. Aizin, T. Otsuji, and V. Ryzhii, planar plasmonic crystal on a membrane
Plasmonic Field-Effect Transistors (TeraFETs) substrate, Bull. Rus. Acad. Sci. Phys. 76, 229-232
for 6G Communications, Sensors 21, 7907 (2012).
(2021). [8] G. C. Dyer, G. R. Aizin, S. Preu, N. Q. Vinh, S.
[2] Yu-Shyan Lin; Bo-Yuan Chen. AlGaAs/GaAs J. Allen, J. L. Reno, and E. A. Shaner, Inducing
high-electron mobility transistor with an incipient Terahertz finite plasmonic crystal in
In0.1Ga0.9As/In0.22Ga0.78As/In0.1Ga0.9As channel coupled two-dimensional plasmonic cavities,
grown by metal-organic chemical vapor Phys. Rev. Lett. 109, 126803 (2012).
deposition, J. Vac. Sci. Technol. B 27, 606–611 [9] G. R. Aizin and G. Dyer, Transmission line theory
(2009). of collective plasma excitations in periodic two-
[3] M. Dub, P. Sai, P. Pristawko, W. Knap, and dimensional electron systems: finite plasmonic
S.Rumyantsev, Absorption spectra of crystals and Tamm states, Phys. Rev. B, 86,
AlGaN/GaN terahertz plasmonic crystals – 253316 (2012).
experimental validation of analytical approach, [10] W. F. Andress, H. Yoon, K. Y. M. Yeung, L. Qin,
Nanomaterials 14, 1502 (2024). K. West, L. Pfeiffer, and D. Ham,
[4] Y. Zhang and M. S. Shur, p-Diamond, Si, GaN, Ultra-subwavelength two-dimensional plasmonic
and InGaAs TeraFETs, IEEE Trans. Electron circuits, Nano Lett. 12, 2272-2277 (2012).
Devices 67, 4858-4865 (2020). [11] K. Y. M. Yeung, J Chee, H. Yoon, Y. Song, J.
[5] L. Banszerus et al. Extraordinary high room Kong, and D. Ham, Far-infrared graphene
temperature carrier mobility in graphene-WSe2 plasmonic crystals for plasmonic band
heterostructures, arXiv:1909.09523 [cond- engineering, Nano Lett. 14, 2479-2484 (2014).
mat.mes-hall] (2019). [12] H. Yoon, K. Y. M. Yeung, P. Kim, and D. Ham,
[6] P. Sai, M. Dub, V. V. Korotyeyev and W. Knap, Plasmonics with two-dimensional conductors,
Terahertz Grating-Gate Plasmonic Crystals, in Philos. Trans. Royal Soc. A 372, 20130104
Proceedings of the 24th International Conference (2014).
on Applied Electromagnetics and [13] V. Y. Kachorovskii and M. S. Shur, Current
Communications (ICECOM 2023), Dubrovnik, induced terahertz oscillations in plasmonic
Croatia (IEEE, New York, 2023), pp. 1-4. crystal, Appl. Phys. Lett. 100, 232108 (2012).
[14] G. R. Aizin, J. Mikalopas, and M. Shur, Current
driven plasmonic boom instability in three-

8
 dimensional gated periodic ballistic systems with infinite and semi-infinite metal
nanostructures, Phys. Rev. B 93, 195315 gratings, Phys. Rev. B 110, 125425 (2024).
(2016). [25] M. V. Krasheninnikov and A. V. Chaplik, Two
[15] T. Hosotani, A. Satou, and T. Otsuji, Terahertz dimensional plasma waves in superlattices,
emission in an InGaAs-based dual-grating-gate Sov. Phys. Semicond. 15, 19-23 (1981).
high-electron-mobility transistor plasmonic [26] U. Mackens, D. Heitmann, L. Prager, J. P.
photomixer, Appl. Phys. Express 14, 051001 Kotthaus, and W. Beinvogl, Minigaps in the
(2021). plasmon dispersion of a two-dimensional
[16] A. S. Petrov, D. Svintsov, V. Ryzhii, and M. S. electron gas with spatially modulated charge
Shur, Amplified-reflection plasmon instabilities density, Phys. Rev. Lett. 53, 1485-1488 (1984).
in grating-gate plasmonic crystals, Phys. Rev. B [27] H. Shokri Kojori, J-H Yun, Y. Paik, J. Kim, W.
95, 045405 (2017). A. Anderson, and S. J. Kim, Plasmon Field
[17] G. R. Aizin, J. Mikalopas, and M. Shur, Effect Transistor for Plasmon to Electric
Plasmonic instabilities in two-dimensional Conversion and Amplification, Nano Lett.
electron channels of variable width, Phys. Rev. 16, 250-254 (2016).
B 101, 245404 (2020). [28] R. Hasler, C. Reiner-Rozman, S. Fossati, P.
[18] S. Boubanga-Tombet, W. Knap, D. Yadav, A. Aspermair, J. Dostalek, S. Lee, M. Ibanez, J.
Satou, D. B. But, V. V. Popov, I. V. Gorbenko, Bintinger, and W. Knoll, Field-Effect Transistor
V. Kachorovskii, and T. Otsuji, Room- with a Plasmonic Fiber Optic Gate Electrode as
temperature amplification of terahertz radiation a Multivariable Biosensor Device, ACS Sens.
by grating-gate graphene structures, Phys. Rev. 7, 504-512 (2022).
X 10, 031004 (2020). [29] see https://en.wikipedia.org/wiki/Sonic_boom
[19] G. R. Aizin, J. Mikalopas, and M. Shur, Plasma [30] A. V. Chaplik, Possible crystallization of charge
instability and amplified mode switching effect carriers in low-density inversion layers, Sov.
in THz field effect transistors with a grating Phys. JETP 35, 395 (1972).
gate, Phys. Rev. B 107, 245424 (2023). [31] J. Chee, H. S. Jung, S. Harvey, K. West, L.
[20] P. Sai, V. V. Korotyeyev, M. Dub, M. Pfeiffer, A. Yakoby, and D. Ham, Microwave-
Słowikowski, M. Filipiak, D. B. But, Yu. regime demonstration of plasmonic non-
Ivonyak, M. Sakowicz, Yu. M. Lyaschuk, S. M. reciprocity in a flowing two-dimensional
Kukhtaruk, G. Cywiński, and W. Knap, electron gas, arXiv:2502.05904v1 [cond-
Electrical Tuning of Terahertz Plasmonic mat.mes-hall] (2025).
Crystal Phases, Phys. Rev. X 13, 041003 (2023). [32] M. Shur, private communication (2025).
[21] I. V. Gorbenko and V. Yu. Kachorovskii, Lateral [33] A. M. Seiler, N. Jacobsen, M. Statz, N.
plasmonic crystals: tunability, dark modes, and Fernandez, F. Falorsi, K. Watanabe, T.
weak-to-strong coupling transition, Phys. Rev. B Taniguchi, Z. Dong, L. S. Levitov, and R. T.
110, 155406 (2024). Weitz, Probing the tunable multi-cone band
[22] I. V. Gorbenko and V. Yu. Kachorovskii, Lateral structure in Bernal bilayer graphene, Nat.
plasmonic superlattice in strongly dissipative Commun. 15, 3133 (2024) and references
regime, arXiv:2405.06441 [cond-mat.mes-hall] therein.
(2024). [34] M. Gladysiewicz, R. Kudrawiec, and M. S.
[23] G. R. Aizin, S. Mundaganur, A. Mundaganur, Wartak, 8-band and 14-band k · p modeling of
and J. Bird, Terahertz-frequency plasmonic electronic band structure and material gain in
crystal instability in field-effect transistors with Ga(In)AsBi quantum wells grown on GaAs and
asymmetric gate arrays, Sci. Rep. 14, 11856 InP substrates, J. Appl. Phys. 118, 055702
(2024). (2015).
[24] A. V. Nikonov, A. A. Zabolotnykh, and V. A. [35] R. L. Mills, Phonon-roton model for compressed
Volkov, Plasmons in two-dimensional electron He II, Ann. Phys. (N.Y.) 35, 410-425 (1965).