Course Course SEMICONDUCTOR PHYSICS AND Course L T P C

21PYB102J B Basic Sciences

Code Name COMPUTATIONAL METHODS Category 3 1 2 5
Pre- Co-
Progressive
requisite Nil requisite Nil Nil
Courses
Courses Courses
Course Offering Data Book /
Physics and Nanotechnology Nil
Department Codes/Standards

Course Learning
The purpose of learning this course is to: Program Outcomes (PO)
Rationale (CLR):

CLR-1 : Introduce band gap and Fermi level in semiconductors and how to compute those properties 1 2 3 4 5 6 7 8 9 10 11 12
CLR-2 : Explain the concept of carrier transport mechanism in p-n and metal semiconductor junction

Individual & Team Work

Engineering Knowledge

Design & Development

Project Mgt. & Finance

CLR-3 : Provide an insight on semiconductor optical transitions and photovoltaic effect
Procure knowledge of electrical and optical measurements in semiconductor and to instigate the

Modern Tool Usage

Life Long Learning

CLR-4 :

Society & Culture

Problem Analysis
concepts of TCAD

Communication
Analysis, Design,

Environment &
Develop necessary skills for low dimensional semiconductor material processing and

Sustainability
CLR-5 :
characterization and to introduced the basic of machine learning in image processing

Research
Utilize the concepts in semiconductors physics and computational methods for the application in
CLR-6 :

Ethics
engineering and technology

Course Outcomes (CO): At the end of this course, learners will be able to:
CO-1 : Understand and compute energy band in solids and electron occupation probability 3 - - - - - - - - - -
CO-2 : Understand and analyze the working of optoelectronic devices 3 - - - - - - - - - -
CO-3 : Apply the knowledge to the development of new and novel optoelectronic devices - - 3 - - - - - - - -
Understand the working mechanism of electrical and optical measurements and gain the - - -
CO-4 : 3 - - - - - - -
fundamentals of TCAD
Acquire knowledge of the low dimensional semiconductor material fabrication and characterization - - -
CO-5 : - 3 - - - - - -
and gain insights of the concepts of machine learning
CO-6 : Apply the concepts ofsemiconductors physics and computational methods in real time applications 3 - 3 - - - - - - - -

Unit-1: ENERGY BANDS IN SOLIDS 18 Hours

Introduction to Classical Free electron theory-Introduction to Quantum Free electron theory-Density of states-Concepts-Energy band in solids-Kronig-Penney model--E-k
diagram-Direct and Indirect band gap-Concept of phonons-Concept of Brillouin Zone-Computational determination of Band Structure – Concepts , Eigenvalue equations-
Classification of electronic materials-Fermi level-Probability of occupation-Numerical determination of probability of occupation and carrier concentration-Concept of Fermi
surface of a metal-Computational determination of Fermi Surface of Cu as example.

Experiments
1. Determination of Hall coefficient of Semiconductor material
2. Determination of Band Gap of semiconductor-Post Office Box method
Unit-2: CARRIER TRANSPORT MECHANISM IN SEMICONDUCTORS 18 Hours
Intrinsic semiconductor-Dependence of Fermi level on carrier-concentration-and temperature in Intrinsic semiconductor-Extrinsic semiconductors-Dependence of Fermi level on carrier-
concentration-and temperature in extrinsic semiconductors-Explanation for carrier generation-Explanation for recombination processes -Carrier transport - diffusion and drift current-
Continuity equation-p-n junction-Biasing concept in p-n junction-Metal-semiconductor junction -Ohmic contact -Semiconductor materials of interest for optoelectronic devices-
Photocurrent in a P-N junction diode- Light emitting diode- Classification of Light emitting diode-Optoelectronic integrated circuits-Organic light emitting diodes

Experiments
3. Determination of Band Gap of semiconductor-Four probe method
4. Study of I-V characteristics of a light dependent resistor (LDR)
5. Study of V-I and V-R characteristics , Efficiency of a solar cell

Unit-3: OPTOELECTRONIC PROPERTIES OF SEMICONDUCTORS 18 Hours

Concept of optical transitions in bulk semiconductor- Optical absorption process-Concept of recombination process-Optical recombination process-Explanation for spontaneous
emission-Explanation for stimulated emission-Joint density of states in semiconductor-Density of states for photons-Explanation of transition rates-Numerical computation of optical
loss-Finite element method to calculate Photon density of states -Basic concepts of Photovoltaic-Photovoltaic effect-Applications of Photovoltaic effect-Determination of efficiency
of a PV cell-Computational approach to calculate optical excitations-Example: optical excitation in BN ( Boron nitride)

Experiments
6. Characterization of pn junction diode ( Forward and reverse bias)
7. Verify Inverse square law of light using a photo cell.

Unit-4: ELECTRICAL AND OPTICAL MEASUREMENTS 18 Hours

Concept of electrical measurements-Two point probe technique-Four point probe technique-linear method-Four point probe technique-Vander Pauw method-Significance of carrier
density-Significance of resistivity and Hall mobility-Hot-point probe measurement-Capacitance-voltage measurements-Extraction of parameters in a diode-I-V characteristics of a diode-
Introduction of TCAD in basic level- Significance of band gap in semiconductors-Concept of absorption and transmission-Boltzmann Transport Equation-Scattering
Mechanisms-Monte Carlo method- Concept only-Example only Monte Carlo Methods for Solution of BTE( Boltzmann equation)

Experiments
8. Determination of electron and hole mobility versus doping concentration using GNU Octave
9. Determination of Fermi function for different temperature using GNU Octave
10. Study of attenuation and propagation characteristic of optical fiber cable using laser source

Unit-5: LOW DIMENSIONAL SEMICONDUCTOR MATERIALS

Density of states in 2D-Density of states in 1D and 0D-Introduction to low dimensional systems-Quantum well-Quantum wire and dots-Introduction to novel low dimensional
systems -CNT- properties and synthesis-Applications of CNT-Fabrication technique-CVD-Fabrication technique-PVD-Characterizations techniques for low dimensional systems-
Principle of electron microscopy-Scanning electron microscopy-Transmission electron microscopy-Atomic force microscope-Computational and machine learning approach for
electron microscopy image processing – Concepts, overview-Example of Graphene

Experiments
11. Plotting and interpretation of I-V characteristics of Diode GNU Octave
 12. Determination of lattice parameters using powder XRD
13. Mini Project
1 J. Singh, “Semiconductor Optoelectronics”: Physics and Technology, McGraw-Hill Inc. 4. A. Yariv and P. Yeh, Photonics:” Optical Electronics in Modern Communications”, Oxford
1995. University Press, New York 2007.
Learning 2. B. E. A. Saleh and M. C. Teich, “Fundamentals of Photonics”, John Wiley & Sons, 5. Computational Materials Science: An Introduction by June Gunn Lee, Chapter 7, Page 227- 230 (Quantum
Resources Inc., 2007. Espresso)and Page 300-307 (VASP)
3. S. M. Sze, “Semiconductor Devices” Physics and Technology, Wiley 2008. 6. Finite Element Method GouriDhatt, Emmanuel Lefrançois, Gilbert Touzot, Wiley Publication, ISBN: 978-1-
848-21368-5

Continuous Learning Assessment (CLA) By The CoE

- By the Course Faculty
Bloom’s Formative Life LongLearning Summative
Level of Thinking CLA-1 Average ofunit test CLA-2- Practice FinalExamination
(45%) (15%) (40% weightage)
Theory Practice Theory Practice Theory Practice
Level 1 Remember 20 - - 10 20 -
Level 2 Understand 20 - - 30 20 -
Level 3 Apply 30 - - 20 30 -
Level 4 Analyze 30 - - 40 30 -
Level 5 Evaluate - - - - - -
Level 6 Create - - - - - -
Total 100 % 100 % 100 %

Course Designers
Experts from Industry Experts from Higher Technical Institutions Internal Experts
Dr. Vinay Gupta, National Physical
Prof .C.Vijayan, IITM, Chennai, [email protected]. Dr.C. Preferencial Kala, SRMIST
Laboratory, [email protected]
Prof.S.Balakumar, University of Madras, Chennai, [email protected] Dr.S.Saurab Ghosh S, SRMIST