PD - 94963

IRF3415PbF
HEXFET® Power MOSFET
l Advanced Process Technology
l Dynamic dv/dt Rating D
l 175°C Operating Temperature VDSS = 150V
l Fast Switching
l Fully Avalanche Rated RDS(on) = 0.042Ω
l Lead-Free G

Description ID = 43A
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 TO-220AB
contribute to its wide acceptance throughout the
industry.

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 43
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 30 A
IDM Pulsed Drain Current  150
PD @TC = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy‚ 590 mJ
IAR Avalanche Current 22 A
EAR Repetitive Avalanche Energy 20 mJ
dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.75
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient ––– 62

1/30/04
IRF3415PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 150 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.17 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.042 Ω VGS = 10V, ID = 22A „
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, I D = 250µA
g fs Forward Transconductance 19 ––– ––– S VDS = 50V, ID = 22A
––– ––– 25 VDS = 150V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 120V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
I GSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 200 ID = 22A
Qgs Gate-to-Source Charge ––– ––– 17 nC VDS = 120V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 98 VGS = 10V, See Fig. 6 and 13 „
td(on) Turn-On Delay Time ––– 12 ––– VDD = 75V
tr Rise Time ––– 55 ––– ID = 22A
ns
td(off) Turn-Off Delay Time ––– 71 ––– RG = 2.5Ω
tf Fall Time ––– 69 ––– RD = 3.3Ω, See Fig. 10 „
Between lead, D
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH
from package G

LS Internal Source Inductance ––– 7.5 –––

and center of die contact S

Ciss Input Capacitance ––– 2400 ––– VGS = 0V

Coss Output Capacitance ––– 640 ––– pF VDS = 25V
C rss Reverse Transfer Capacitance ––– 340 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

––– ––– 43
(Body Diode) showing the
A
I SM Pulsed Source Current integral reverse G

––– ––– 150

(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 22A, VGS = 0V „
t rr Reverse Recovery Time ––– 260 390 ns TJ = 25°C, IF = 22A
Qrr Reverse RecoveryCharge ––– 2.2 3.3 µC di/dt = 100A/µs „

Notes:
 Repetitive rating; pulse width limited by ƒ ISD ≤ 22A, di/dt ≤ 820A/µs, VDD ≤ V(BR)DSS,
max. junction temperature. ( See fig. 11 ) TJ ≤ 175°C
‚ VDD = 25V, starting TJ = 25°C, L = 2.4mH „ Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 22A. (See Figure 12)
 IRF3415PbF

1000 1000 VGS

VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V

I D , Drain-to-Source Current (A)

I D , Drain-to-Source Current (A)

7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
5.5V
5.0V 5.5V
5.0V
BOTTOM 4.5V BOTTOM 4.5V

100 100

4.5V 4.5V

20us PULSE WIDTH 20us PULSE WIDTH

TJ = 25 oC TJ = 175 oC
10 10
1 10 100 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 3.0
ID = 37A
RDS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)

2.5

2.0
(Normalized)

TJ = 25 ° C
100 1.5
TJ = 175 ° C

1.0

0.5
V DS = 50V
20µs PULSE WIDTH VGS = 10V
10 0.0
4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( oC)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
 IRF3415PbF

6000 20
VGS = 0V, f = 1MHz ID = 22A
Ciss = Cgs + Cgd , Cds SHORTED VDS = 120V
Crss = Cgd VDS = 75V

VGS , Gate-to-Source Voltage (V)

5000 Coss = Cds + Cgd 16 VDS = 30V
C, Capacitance (pF)

4000
12
Ciss
3000

8
2000 Coss

Crss
4
1000

FOR TEST CIRCUIT

SEE FIGURE 13
0 0
1 10 100 0 40 80 120 160 200
VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ISD , Reverse Drain Current (A)

100
I D , Drain Current (A)

100 10us
TJ = 175 o C

10 100us

TJ = 25 o C 10
1ms
1

TC = 25 o C 10ms
TJ = 175 o C
V GS = 0 V Single Pulse
0.1 1
0.2 0.6 1.0 1.4 1.8 1 10 100 1000
VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
 IRF3415PbF

50
RD
V DS

VGS
D.U.T.
40
RG
+
ID , Drain Current (A)

-VDD

30 10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

20
Fig 10a. Switching Time Test Circuit
10 VDS
90%

0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs. td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms

1
Thermal Response (Z thJC )

D = 0.50

0.20

0.1 0.10

PDM
0.05
t1
0.02 t2
SINGLE PULSE
0.01 (THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRF3415PbF

1400
ID

EAS , Single Pulse Avalanche Energy (mJ)

TOP 9.0A
15V
1200 16A
BOTTOM 22A
1000
L DRIVER
VDS
800

RG D.U.T +
V
- DD 600
IAS A
20V
tp 0.01Ω 400

Fig 12a. Unclamped Inductive Test Circuit 200

0
25 50 75 100 125 150 175
V(BR)DSS Starting TJ , Junction Temperature (oC)
tp

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

I AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms Same Type as D.U.T.

50KΩ

12V .2µF
QG .3µF

+
10 V V
QGS QGD D.U.T. - DS

VGS
VG
3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
 IRF3415PbF

Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS

IRF3415PbF

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)
10.54 (.415) 3.78 (.149) -B-
2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)
2.62 (.103) 4.20 (.165)
-A- 1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045) LEAD ASSIGNMENTS
MIN HEXFET IGBTs, CoPACK
1 - GATE
1 2 3 2 - DRAIN
1- GATE 1- GATE
2- DRAIN
3 - SOURCE 2- COLLECTOR
3- SOURCE
4 - DRAIN 3- EMITTER
4- DRAIN 4- COLLECTOR
14.09 (.555)
13.47 (.530) 4.06 (.160)
3.55 (.140)

0.93 (.037) 0.55 (.022)

3X 3X
0.69 (.027) 0.46 (.018)
1.40 (.055)
3X
1.15 (.045) 0.36 (.014) M B A M 2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

TO-220AB Part Marking Information

E XAMPL E : T HIS IS AN IR F 1010
LOT CODE 1789
AS S E MB L E D ON WW 19, 1997 INT E R NAT IONAL PAR T NU MB E R
IN T H E AS S E MB LY L INE "C" R E CT IF IE R
L OGO
Note: "P" in assembly line
position indicates "Lead-Free" DAT E CODE
YE AR 7 = 1997
AS S E MB L Y
LOT CODE WE E K 19
L INE C

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.01/04
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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