sfh615aa
sfh615aa
www.vishay.com
Vishay Semiconductors
Optocoupler, Phototransistor Output, High Reliability, 5300 VRMS
FEATURES
• Low CTR degradation
A 1 4 C • Good CTR linearity depending on forward
current
C 2 3 E
• Isolation test voltage, 5300 VRMS
• High collector emitter voltage, VCEO = 70 V
• Low saturation voltage
• Fast switching times
i179060
• Temperature stable
• Low coupling capacitance
LINKS TO ADDITIONAL RESOURCES
• End stackable, 0.100" (2.54 mm) spacing
• High common mode interference immunity (unconnected
Product Page Design Tools Footprints base)
• Material categorization: for definitions of compliance
DESCRIPTION please see www.vishay.com/doc?99912
The SFH615XXX features a large assortment of current
transfer ratio, low coupling capacitance and high isolation AGENCY APPROVALS
voltage. These couplers have a GaAs infrared emitting diode • UL
emitter, which is optically coupled to a silicon planar • cUL 1577
phototransistor detector, and is incorporated in a plastic
DIP-4 package. • DIN EN 60747-5-5 (VDE 0884) available with option 1
The coupling devices are designed for signal transmission • CQC
between two electrically separated circuits. • BSI
The couplers are end-stackable with 2.54 mm lead spacing. • FIMKO
Creepage and clearance distances of > 8 mm are achieved
with option 6. This version complies with 60950
(DIN VDE 0805) for reinforced insulation up to operation
voltage of 400 VRMS or DC.
ORDERING INFORMATION
S F H 6 1 5 A x x X 0 0 #
7.62 mm
Option 8 Option 9
PART NUMBER PACKAGE OPTION Option 7
CTR (%)
AGENCY CERTIFIED / PACKAGE
5 mA
UL, cUL, CQC, CSA, FIMKO 50 to 600 100 to 600 100 to 300 50 to 150
DIP-4 SFH615AA - SFH615AGR SFH615AY
SMD-4, option 7 SFH615AA-X007 - SFH615AGR-X007T -
SMD-4, option 8 - - - SFH615AY-X008T
SMD-4, option 9 - SFH615AGB-X009T (1) - -
UL, cUL, CQC, CSA, FIMKO,
50 to 600 100 to 600 100 to 300 50 to 150
VDE (option 1)
SMD-4, option 7 - - SFH615AGR-X017T (1) -
SMD-4, option 8 - - - SFH615AY-X018T
SMD-4, option 9 - - - SFH615AY-X019T
Notes
• Additional options may be possible, please contact sales office
(1) Also available in tubes; do not add T to end
SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Turn-on time IF = 5 mA ton - 2 - μs
Turn-off time IF = 5 mA toff - 25 - μs
20
pF f = 1.0 MHz
IF 1 kΩ 15
C
VCC = 5 V
10
5
47 Ω
CCE
isfh615aa_01
0
10-2 10-1 100 101 V 102
Ve
isfh615aa_03
Fig. 1 - Switching Operation (with saturation) Fig. 3 - Transistor Capacitance (typ.) vs. Collector Emitter Voltage
%
120
103
IF mA
IC IF = 10 mA, VCC = 5.0 V
5
IF 90
4
3
2 60
102
1
5
30
0
101 0 25 50 75 °C 100
- 25 0 25 50 °C 75
TA
TA isfh615aa_04
isfh615aa_02
Fig. 2 - Current Transfer Ratio (typ.) vs. Temperature Fig. 4 - Permissible Diode Forward Current vs.
Ambient Temperature
30 1.2
Ic mA VF V
IF = 14 mA
25 °C
50 °C
IF = 12 mA 75 °C
20 1.1
IF = 10 mA
IF = 8 mA
10 IF = 6 mA 1.0
IF = 4 mA
IF = 1 mA IF = 2 mA
0 0.9
0 5 10 V 15 10-1 5 100 5 101 5 mA 102
VCE IF
isfh615aa_05 isfh615aa_07
Fig. 5 - Output Characteristics (typ.) Collector Current vs. Fig. 7 - Diode Forward Voltage (typ.) vs. Forward Current
Collector Emitter Voltage
104 200
mA tp
IF 5 tp Ptot mW
D=0 D= IF
0.005
T
T 150
0.01
0.02 Pulse cycle Transistor
103 0.05 D = parameter
5 0.1
0.2 100
0.5
102 Diode
DC
5 50
101 0
10-5 10-4 10-3 10-2 10-1 100 s 101 0 25 50 75 °C 100
tp TA
isfh615aa_06 isfh615aa_08
Fig. 6 - Permissible Pulse Handling Capability Forward Current vs. Fig. 8 - Permissible Power Dissipation vs. Temperature
Pulse Width
6.81
6.48
Pin 1 identification
4.83
4.55
7.62 typ.
ISO Method A
10 °
0.84
1.14 0.74
0.76
3.81
3.30 6.35
5.84)
4°
0.89 3.30
typ .
0.51 2.79
1.32 0° to 15°
1.22
0.25 typ.
2.67
i178027-1 2.41
0.406 (10.3)
max.
XXXX 68
SFH615AGR
V
Notes
• XXXX = LMC (lot marking code)
• VDE logo is only marked on option 1 parts
• Tape and reel suffix (T) is not part of the package marking
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