Semiconductor Electronics:

1-Mark Questions

What is the energy band gap of a semiconductor?

Answer: The energy band gap (EgE_g) of a semiconductor is typically between 0.2 eV0.2 \, \text{eV} and
3 eV3 \, \text{eV}.

What are intrinsic semiconductors?

Answer: Intrinsic semiconductors are pure semiconductors with equal numbers of electrons and holes.

What is the primary charge carrier in an n-type semiconductor?

Answer: Electrons.

2-Mark Questions

Differentiate between p-type and n-type semiconductors.

Answer:

1. p-type: Doped with trivalent atoms (e.g., Boron), holes are the majority carriers.
2. n-type: Doped with pentavalent atoms (e.g., Phosphorus), electrons are the majority carriers.

What is the function of a depletion region in a p-n junction?

Answer: The depletion region forms due to the diffusion of charge carriers, creating a barrier potential that
opposes further charge carrier movement, ensuring the diode's rectifying behavior.

3-Mark Questions

Explain how doping improves the conductivity of semiconductors.

Answer: Doping introduces impurity atoms into a semiconductor, increasing the number of charge carriers:

1. Pentavalent atoms donate free electrons, forming an n-type semiconductor.

2. Trivalent atoms create holes, forming a p-type semiconductor.

Describe the working of a forward-biased p-n junction diode.

Answer:

1. The external voltage reduces the potential barrier, allowing electrons to move from the n-side to the p-side and holes to
move from the p-side to the n-side.
2. This results in a significant current flow through the diode.

4-Mark Questions

Illustrate the energy band diagrams for metals, insulators, and semiconductors.
Answer:

1. Metals: Conduction and valence bands overlap, allowing free flow of electrons.
2. Insulators: Large energy gap (Eg>3 eVE_g > 3 \, \text{eV}), preventing electron excitation to the conduction band.
3. Semiconductors: Small energy gap (Eg<3 eVE_g < 3 \, \text{eV}), allowing limited conduction at room temperature.

Explain the role of the capacitor in a full-wave rectifier circuit.

Answer:

1. The capacitor smoothens the output voltage by charging during the peaks of the rectified signal and discharging when
the signal drops, reducing ripple and providing a near-constant DC output.
5-Mark Questions

Explain the formation of the depletion region in a p-n junction and its significance.
Answer:

1. Formation: Electrons from the n-region diffuse into the p-region, recombining with holes, creating a region devoid of
free charge carriers (depletion region).
2. Significance:

1. Establishes a built-in potential barrier that prevents further diffusion of carriers.

2. Essential for the rectifying action of diodes.

Describe the operation of a full-wave rectifier and its advantages over a half-wave rectifier.
Answer:

1. Operation:

1. Uses two diodes and a center-tap transformer.

2. During each half-cycle of AC input, one diode conducts, producing a unidirectional output.

2. Advantages:

1. Higher efficiency as both half-cycles are utilized.

2. Smoother output voltage compared to a half-wave rectifier.

1. Illustrate the energy band diagrams for metals, insulators, and

semiconductors.

Explanation:

Metals:

o Conduction and valence bands overlap.

o Electrons can easily move from the valence band to the conduction band, enabling high conductivity.
o No band gap (Eg≈0E_g \approx 0).

Insulators:

o Large energy gap (Eg>3 eVE_g > 3 \, \text{eV}) between the valence and conduction bands.
o Electrons cannot gain enough energy to jump into the conduction band, preventing conduction.

Semiconductors:

o Moderate energy gap (Eg<3 eVE_g < 3 \, \text{eV}).

o At room temperature, some electrons gain energy to cross the gap, enabling limited conduction.

Diagram:

Metals: Insulators: Semiconductors:

----------- ----------- -----------
Valence Band Valence Band Valence Band
/ Gap Gap
Conduction Band Conduction Band Conduction Band
Overlap Large gap Small gap

2. Explain the formation of the depletion region in a p-n junction and its
significance.
Explanation:

Formation:

o Electrons diffuse from the n-region to the p-region, recombining with holes, and vice versa.
o This diffusion creates an area devoid of free charge carriers, called the depletion region.
o Immobile positive ions remain on the n-side, and immobile negative ions remain on the p-side, creating a built-in
potential.

Significance:

o The depletion region creates a potential barrier, preventing further diffusion of carriers.
o It is essential for the rectifying property of a diode (allows current flow in one direction).

Diagram:

P-side | N-side
----------- | -----------
- - - - - - - | + + + + + + +
Free holes depleted | Free electrons depleted
Depletion Region | Barrier Potential

3. Explain the role of the capacitor in a full-wave rectifier circuit.

Explanation:

 A full-wave rectifier converts AC into pulsating DC.

 The capacitor smoothens the pulsating output by charging during peaks and discharging during dips.
 This reduces the ripple and provides a steady DC output.

Diagram:

Full-Wave Rectifier with Capacitor Filter:

AC Input Rectifier Output Filtered DC Output

~~~~ |\/\/| --------
/\ /\ --------
/ \

4. Describe the operation of a full-wave rectifier and its advantages over

a half-wave rectifier.

Explanation:

Operation:

o A full-wave rectifier uses two diodes and a center-tap transformer.

o During the positive half-cycle of the AC input, one diode conducts, and during the negative half-cycle, the other diode
conducts.
o This results in a unidirectional output voltage for both halves of the AC cycle.

Advantages:

o Utilizes both halves of the AC cycle, improving efficiency.

o Produces a smoother DC output.
o Higher average output voltage compared to a half-wave rectifier.

Diagram:

Circuit Diagram of Full-Wave Rectifier:

 Transformer
Center-Tap
D1 D2
| |
Output - - - - - +

Waveforms:

Input: ~~~~ Output: /\ /\

\/ \/ \/ \/

Assertion and Reasoning Questions

Assertion (A): The resistance of a p-type semiconductor decreases as the temperature increases.
Reason (R): As the temperature increases, more electrons gain sufficient energy to jump from the valence
band to the conduction band, creating more charge carriers.
Answer:
(a) Both A and R are true, and R is the correct explanation of A.

Assertion (A): In an n-type semiconductor, electrons are the majority charge carriers.
Reason (R): Pentavalent atoms like phosphorus are used to dope the semiconductor, donating free electrons.
Answer:
(a) Both A and R are true, and R is the correct explanation of A.

Assertion (A): The energy gap of an intrinsic semiconductor is large compared to that of an insulator.
Reason (R): The energy gap of an intrinsic semiconductor is small enough for electrons to gain thermal
energy and move into the conduction band.
Answer:
(b) A is true, but R is false.

Assertion (A): The depletion region in a p-n junction increases when the external reverse bias is applied.
Reason (R): The reverse bias enhances the electric field across the junction, widening the depletion region.
Answer:
(a) Both A and R are true, and R is the correct explanation of A.

Assertion (A): The forward biasing of a diode reduces its potential barrier.
Reason (R): The applied voltage opposes the built-in potential barrier, allowing current to flow easily
through the diode.
Answer:
(a) Both A and R are true, and R is the correct explanation of A.

Case-Based Questions

Case 1: Behavior of n-type and p-type Semiconductors

An n-type semiconductor is doped with phosphorus (a pentavalent element), while a p-type semiconductor is doped
with boron (a trivalent element). The n-type semiconductor has free electrons as majority carriers, while the p-type
semiconductor has holes as majority carriers.

Questions:

Why are electrons the majority carriers in n-type semiconductors?

Answer: Pentavalent dopants like phosphorus donate extra electrons that are free to move in the lattice,
making electrons the majority carriers.

How does doping with boron create holes in a p-type semiconductor?

Answer: Boron atoms, with three valence electrons, form covalent bonds with the neighboring silicon
atoms, leaving a hole where an electron is missing. These holes are the majority carriers.
 What happens to the conductivity of the semiconductor if the temperature is increased?
Answer: With an increase in temperature, more electrons gain sufficient energy to jump into the conduction
band, increasing the number of charge carriers and thus the conductivity.

Case 2: p-n Junction Diode

Consider a p-n junction diode with a depletion region formed at the junction between the p-type and n-type regions.
The diode is under forward and reverse bias conditions.

Questions:

What happens to the width of the depletion region when a reverse bias is applied?
Answer: Under reverse bias, the width of the depletion region increases because the external voltage
opposes the movement of charge carriers, further widening the depletion region.

Explain the behavior of the p-n junction diode under forward bias.
Answer: When forward biased, the potential barrier of the p-n junction is reduced, allowing the majority
carriers (electrons and holes) to move across the junction, resulting in a current flow.

What is the significance of the potential barrier in a p-n junction?

Answer: The potential barrier prevents the free movement of charge carriers under equilibrium conditions,
and it is only overcome when forward bias is applied.

Case 3: Full-Wave Rectifier

A full-wave rectifier circuit uses two diodes and a center-tapped transformer. It rectifies both the positive and
negative halves of an alternating current (AC) input.

Questions:

How does a full-wave rectifier improve efficiency compared to a half-wave rectifier?

Answer: A full-wave rectifier utilizes both halves of the AC cycle, producing a smoother DC output and
higher efficiency, while a half-wave rectifier only uses one half of the AC cycle.

What role does the capacitor play in a full-wave rectifier circuit?

Answer: The capacitor smooths the pulsating DC output by charging during the peaks of the rectified signal
and discharging during the dips, reducing ripple.

Explain why the output voltage from a full-wave rectifier is smoother than that of a half-wave
rectifier.
Answer: In a full-wave rectifier, the output voltage is continuous during both halves of the AC cycle,
whereas in a half-wave rectifier, the current only flows during one half of the cycle, resulting in greater
fluctuation.

1. General Properties of Semiconductors

Which of the following materials is an intrinsic semiconductor?

(a) Silicon (Si)
(b) Gallium Arsenide (GaAs)
(c) Germanium (Ge)
(d) All of the above
Answer: (d) All of the above

The energy gap between the conduction band and the valence band in an insulator is typically:
(a) 0 eV0 \, \text{eV}
(b) 1 eV1 \, \text{eV}
(c) 2 eV2 \, \text{eV}
 (d) Greater than 3 eV3 \, \text{eV}
Answer: (d) Greater than 3 eV3 \, \text{eV}

Which of the following is used to dope an n-type semiconductor?

(a) Boron
(b) Phosphorus
(c) Gallium
(d) Indium
Answer: (b) Phosphorus

2. p-n Junction and Diodes

In a p-n junction diode, the majority carriers in the p-type region are:
(a) Electrons
(b) Holes
(c) Ions
(d) Neutrons
Answer: (b) Holes

When a p-n junction diode is forward biased, the width of the depletion region:
(a) Increases
(b) Decreases
(c) Remains constant
(d) Becomes zero
Answer: (b) Decreases

The reverse saturation current of a p-n junction diode is due to:

(a) Majority carriers
(b) Minority carriers
(c) Both majority and minority carriers
(d) Thermal energy
Answer: (b) Minority carriers

3. Semiconducting Materials and Doping

Which of the following is a characteristic of an n-type semiconductor?

(a) Holes are the majority carriers
(b) Electrons are the majority carriers
(c) Doped with trivalent atoms
(d) Doped with pentavalent atoms
Answer: (b) Electrons are the majority carriers

The number of charge carriers in a semiconductor can be increased by a process called:

(a) Doping
(b) Ionization
(c) Polarization
(d) Fusion
Answer: (a) Doping

In which type of semiconductor is boron used as a dopant?

(a) n-type semiconductor
(b) p-type semiconductor
(c) Both n-type and p-type semiconductors
(d) None of the above
Answer: (b) p-type semiconductor

4. Rectification and Diode Characteristics

 What is the main advantage of using a full-wave rectifier over a half-wave rectifier?
(a) Higher efficiency
(b) Smoother DC output
(c) Utilizes both halves of the AC cycle
(d) All of the above
Answer: (d) All of the above

In a p-n junction diode under reverse bias, the current is primarily due to:
(a) Majority carriers
(b) Minority carriers
(c) Both majority and minority carriers
(d) None of the above
Answer: (b) Minority carriers

The threshold voltage of a silicon diode is approximately:

(a) 0.3 V
(b) 0.7 V
(c) 1.1 V
(d) 1.5 V
Answer: (b) 0.7 V

5. Special Cases and Applications

Which of the following is a characteristic of an intrinsic semiconductor at 0 K?

(a) It behaves as an insulator
(b) It behaves as a conductor
(c) It behaves as a superconductor
(d) It has free charge carriers
Answer: (a) It behaves as an insulator

Which of the following is true for a diode in reverse bias?

(a) It conducts current easily
(b) It blocks current
(c) The current increases with increasing forward bias
(d) The reverse current increases exponentially with reverse bias
Answer: (b) It blocks current

In an n-type semiconductor, the majority carriers are:

(a) Holes
(b) Electrons
(c) Both holes and electrons
(d) None of the above
Answer: (b) Electrons

1. General Properties of Semiconductors

The forbidden energy gap for a semiconductor is typically:

(a) 0 eV0 \, \text{eV}
(b) 1 eV1 \, \text{eV}
(c) 2 eV2 \, \text{eV}
(d) 3 eV3 \, \text{eV}
Answer: (b) 1 eV1 \, \text{eV}

What is the most commonly used material for the fabrication of semiconductor devices?
(a) Silicon
(b) Germanium
(c) Gallium arsenide
 (d) Copper
Answer: (a) Silicon

Which of the following is a characteristic of intrinsic semiconductors?

(a) Doped with impurities
(b) Equal number of electrons and holes
(c) High conductivity
(d) Large energy gap
Answer: (b) Equal number of electrons and holes

2. p-n Junction and Diodes

Which of the following is true for a p-n junction diode under forward bias?
(a) The diode blocks the current
(b) The potential barrier increases
(c) The diode conducts current
(d) The current is zero
Answer: (c) The diode conducts current

The width of the depletion region in a p-n junction diode increases under:
(a) Forward bias
(b) Reverse bias
(c) Zero bias
(d) Both forward and reverse bias
Answer: (b) Reverse bias

The current flowing through a p-n junction diode is due to:

(a) Minority carriers
(b) Majority carriers
(c) Both majority and minority carriers
(d) None of the above
Answer: (c) Both majority and minority carriers

3. Doping and Charge Carriers

Which of the following is true for n-type semiconductors?

(a) They have an excess of holes
(b) They are doped with pentavalent atoms
(c) They have an excess of electrons
(d) They are doped with trivalent atoms
Answer: (b) They are doped with pentavalent atoms

The conductivity of a semiconductor can be increased by increasing the temperature because:

(a) More electrons are excited from the valence band to the conduction band
(b) The number of holes decreases
(c) The number of electrons decreases
(d) The forbidden energy gap decreases
Answer: (a) More electrons are excited from the valence band to the conduction band

Which of the following is the majority charge carrier in a p-type semiconductor?

(a) Electrons
(b) Holes
(c) Protons
(d) Neutrons
Answer: (b) Holes

4. Rectification and Diode Characteristics

 In which of the following applications is a p-n junction diode commonly used?
(a) Full-wave rectifier
(b) Amplification
(c) Oscillation
(d) All of the above
Answer: (a) Full-wave rectifier

In a p-n junction diode under reverse bias, which of the following occurs?
(a) Electrons flow from the n-side to the p-side
(b) Current flow is blocked
(c) Holes flow from the p-side to the n-side
(d) Both a and c
Answer: (b) Current flow is blocked

The threshold voltage of a silicon diode is approximately:

(a) 0.3 V
(b) 0.7 V
(c) 1.1 V
(d) 1.5 V
Answer: (b) 0.7 V

5. Special Applications of Diodes

In which application is a zener diode used?

(a) Amplification
(b) Voltage regulation
(c) Light emission
(d) Frequency modulation
Answer: (b) Voltage regulation

Which of the following statements is true for a light-emitting diode (LED)?

(a) It emits light when reverse biased
(b) It emits light when forward biased
(c) It works on the principle of thermionic emission
(d) It is used only for rectification
Answer: (b) It emits light when forward biased

Which of the following is used to detect weak light signals?

(a) Photoresistor
(b) Photodiode
(c) Zener diode
(d) LED
Answer: (b) Photodiode

6. Full-Wave Rectification and Filters

In a full-wave rectifier, how many diodes conduct during each half-cycle of AC?
(a) One
(b) Two
(c) Four
(d) None
Answer: (b) Two

The main function of a filter capacitor in a full-wave rectifier is to:

(a) Reduce the ripple in the output voltage
(b) Increase the AC current
(c) Decrease the frequency of the input AC
 (d) Convert AC to DC
Answer: (a) Reduce the ripple in the output voltage

The efficiency of a full-wave rectifier is approximately:

(a) 25%
(b) 50%
(c) 75%
(d) 81.2%
Answer: (d) 81.2%

1. p-n Junction and Diode Characteristics

Question 1:
In an unbiased p-n junction, holes diffuse from the p-region to n-region because:
(a) Free electrons in the n-region attract them.
(b) They move across the junction by the potential difference.
(c) Hole concentration in p-region is more compared to n-region.
(d) All the above.
Answer: (c) Hole concentration in p-region is more compared to n-region .

Question 2:
When a forward bias is applied to a p-n junction, it:
(a) Raises the potential barrier.
(b) Reduces the majority carrier current to zero.
(c) Lowers the potential barrier.
(d) None of the above.
Answer: (c) Lowers the potential barrier .

Question 3:
In half-wave rectification, what is the output frequency if the input frequency is 50 Hz? What is the output
frequency of a full-wave rectifier for the same input frequency?
Answer:

 Half-Wave Rectifier Output Frequency: 50 Hz

 Full-Wave Rectifier Output Frequency: 100 Hz .

2. Diode Applications and V-I Characteristics

Question 4:
The V-I characteristic of a silicon diode is shown in the figure. Calculate the resistance of the diode at:
(a) ID=15 mAI_D = 15 \, \text{mA}
(b) VD=−10 VV_D = -10 \, \text{V}
Answer:
(a) rfb=10 Ωr_{fb} = 10 \, \Omega
(b) rrb=1.0×107 Ωr_{rb} = 1.0 \times 10^7 \, \Omega .

3. Semiconducting Materials

Question 5:
Carbon, silicon, and germanium have four valence electrons each. Which of the following statements is true?
(a) Eg(Si)<Eg(Ge)<Eg(C)E_g(\text{Si}) < E_g(\text{Ge}) < E_g(\text{C})
(b) Eg(Si)<Eg(Ge)E_g(\text{Si}) < E_g(\text{Ge})
(c) Eg(C)<Eg(Si)<Eg(Ge)E_g(\text{C}) < E_g(\text{Si}) < E_g(\text{Ge})
(d) Eg(C)=Eg(Si)=Eg(Ge)E_g(\text{C}) = E_g(\text{Si}) = E_g(\text{Ge})
Answer: (a) Eg(Si)<Eg(Ge)<Eg(C)E_g(\text{Si}) < E_g(\text{Ge}) < E_g(\text{C}) .

4. Intrinsic and Extrinsic Semiconductors

Question 6:
Which of the following statements is true for n-type semiconductors?
(a) Electrons are the majority carriers and trivalent atoms are the dopants.
(b) Electrons are minority carriers and pentavalent atoms are the dopants.
(c) Holes are minority carriers and pentavalent atoms are the dopants.
(d) Holes are majority carriers and trivalent atoms are the dopants.
Answer: (c) Holes are minority carriers and pentavalent atoms are the dopants .