Target DPP Test Contact Number: 9667591930 / 8527521718

1. Which one of the following represents 5. The electrical conductivity of a

forward biased circuit? semiconductor
(1) Decreases with the rise in its temperature
1. (2) Increases with the rise in its temperature
(3) Does not change with the rise in its
temperature
2. (4) First increases and then decreases with the
rise in its temperature
3.
6. Let nP and ne be the number of holes and
4. conduction electrons respectively in a
semiconductor. Then
2. Two ideal diodes are connected to a battery (1) nP >ne in an intrinsic semiconductor
as shown in the circuit. The current supplied by (2) nP =ne in an extrinsic semiconductor
the battery is (3) nP =ne in an intrinsic semiconductor
(4) ne <nP in an intrinsic semiconductor

7. The intrinsic semiconductor becomes an

insulator at
(1) 0°C
(2) −100°C
(3) 300 K
(4) 0 K
1. 0.75A
2. zero
8. The impurity atom added to germanium to
3. 0.25A
make it an N-type semiconductor is
4. 0.5A
(1) Arsenic
(2) Iridium
3. C and Si both have same lattice
(3) Aluminium
structure,having 4 bonding electrons in
(4) Iodine
each.However, C is insulator whereas Si is
intrinsic semiconductor. This is because
9. Donor type impurity is found in
1. in case of C, the valence band is not
(1) Trivalent elements
completely filled at absolute zero temperature
(2) Pentavalent elements
2. in case of C,the condition band is partly filled
(3) In both the above
even at absolute zero temperature
(4) None of these
3. the four bonding electrons in the case of C lie
in the second orbit,Whereas in the case of Si
they lie in the third
4 .the four bonding electrons in the case of C lie
in the third orbit, whereas for Si they lie in the
fourth orbit

4. PN-junction diode works as a insulator, if

connected
(1) To A.C.
(2) In forward bias
(3) In reverse bias
(4) None of these

Page: 1
 Target DPP Test Contact Number: 9667591930 / 8527521718

10. In the half-wave rectifier circuit shown. 12. Consider the junction diode as an ideal. The
Which one of the following wave forms is true value of current flowing through AB is:
for VCD , the output across C and D?

1. 10−2 A
−1
2. 10 A

3. 10−3 A

4. 0 A

13. Which logic gate is represented by the

1. following combination of logic gates?

2.

3. 1. OR
2. NAND
3. AND
4. NOR

4. 14. The circuit shown below is an electrical

analogue for which of the following logic gates?
11. If resistance of a forward biased pn-junction
is 10 Ω and that of reverse biased pn-junction is
infinite. The reading of ammeter in the circuit
diagram shown below is:

1. AND gate
2. OR gate
3. NOT gate
4. NOR gate

15. C, Si, and Ge have the same lattice

structure. Why is the C insulator?
because ionization energy for C is the least
1.
in comparison to Si and Ge.
1. 0.05 A because ionization energy for C is highest in
2.
2. 0.1 A comparison to Si and Ge.
3. 0.2 A the number of free electrons for conduction
4. 0.5 A 3. in Ge and Si is significant but negligibly
small for C.
4. both (2) and (3).

Page: 2
 Target DPP Test Contact Number: 9667591930 / 8527521718

16. For the given circuit, the potential 18. The system of gates shown in the adjacent
difference between C and D is: diagram represents

1. AND gate
2. OR gate
3. XOR gate
4. null gate (always zero)
1. 0
2. 5 V 19. To make ordinary silicon into a type
p-
3. 10 V semiconductor, you might add to it:
4. 15 V 1. Indium 2. Antimony
3. Germanium 4. Carbon
17.

20. The energy band gap of semiconducting

material to produce violet (wavelength
˚
= 4000 A ) LED is (nearly):
1. 3 eV

2. 5 eV
For the above circuit, the applied voltage V (t)
3. 1 eV
is periodic and linear, and is shown by the 4. 7 eV
waveform below:

The current flowing through R2 varies as:

1. 2.

3. 4.

Page: 3
 Target DPP Test Contact Number: 9667591930 / 8527521718

21. Identify the correct Logic Gate for the 23. Given below are two statements:
following output (Y) of two inputs A and B. Photodiodes are operated in
Statement I:
reverse biased.
Current in forward biased is
Statement II: more than current in reverse
bias in 𝑝 −𝑛 diode.

Statement I is incorrect and Statement II is

1.
correct.
Both Statement I and Statement II are
2.
correct.
Both Statement I and Statement II are
3.
incorrect.
Statement I is correct and Statement II is
4.
1. incorrect.

24. Given below are two statements:

2. Photovoltaic devices can convert
Statement I:
optical radiation into electricity.
The Zener diode is designed to
Statement II: operate under reverse bias in
3. the breakdown.

4. none of these Statement I is incorrect but Statement II is

1.
correct.
Both Statement I and Statement II are
22. A Ge specimen is doped with Al. The 2.
correct.
concentration of acceptor atoms is Both Statement I and Statement II are
approximately 10 m . Given that intrinsic
24 −3 3.
incorrect.
carrier concentration is nearly 10 m−3 , then
19
Statement I is correct but Statement II is
the concentration of electrons in the specimen 4.
incorrect.
is nearly:
1. 10 m−3
10

2. 10 m−3
14

3. 10 m−3
19

4. 10 m−3
18

Page: 4
 Target DPP Test Contact Number: 9667591930 / 8527521718

25. For the following logic gate, the truth table 27. Given a p-n junction with a depletion layer
is: thickness of 10 m, and a potential difference
−6

of 0.3 V across it. The electric field in the

depletion region will be:
1. 10 V/m
−5

2. 3 × 10
5
V/m

3. 10
−6
V/m

4. 3 × 10
7
A B C V/m

0 0 0

1. 0 1 0 28. In the circuit shown in the figure, current

1 0 0
flows between A and B when: (assume that the
diodes are ideal)
1 1 1

A B C

0 0 1

2. 0 1 1

1 0 1

1 1 0

A B C (A) VA > VB (B) VB > VA

0 0 0 Select the correct option:

3. 0 1 1 1. (A) is true
1 0 1 2. (B) is true
1 1 1 3. Both (A), (B) are true
A B C 4. Neither (A) nor (B) is true
0 0 1

4. 0 1 0

1 0 1
29. Given below are two statements:
1 1 0
The resistivity of silicon, a
Assertion (A): semiconductor, decreases when
its temperature is raised.
When temperature is raised, the
26. Which diode is forward-biased in the
number of electrons in the
circuits shown below? (assume the diode is
conduction band as also the
ideal)
Reason (R): number of holes in the valence
1. band increase due to transition
of electrons from valence band
2. to the conduction band.

3. Both (A) and (R) are True and (R) is the

1.
correct explanation of (A).
4. Both (A) and (R) are True but (R) is not the
2.
correct explanation of (A).
3. (A) is True but (R) is False.
4. (A) is False but (R) is True.

Page: 5
 Target DPP Test Contact Number: 9667591930 / 8527521718

30. An LED is:

1. a p-doped silicon that emits light
2. a n-doped silicon that emits light
3. a p-n diode that emits light
4. a transistor that absorbs light

31. A step-down transformer with a ratio of

10 : 1 is used in the adjacent circuit. The input

voltage at the primary is an AC-voltage with

peak value 300 V.

The maximum magnitude of the voltage across

the diode is (assume the diode to be ideal):
1. 300 V
2. 30 V
3. 270 V
4. 330 V

Fill OMR Sheet*

*If above link doesn't work, please go to test link
from where you got the pdf and fill OMR from
there

CLICK HERE to get

FREE ACCESS for 2
days of ANY
NEETprep course

Page: 6