Here are the most frequently asked questions from Unit 1 o1
Here are the most frequently asked questions from Unit 1 o1
4. Explain the construction, working principle, and applications of different types of diodes.
a. P-N Junction Diode
Construction: Formed by joining P-type and N-type semiconductors.
Working: Allows current flow in one direction when forward-biased; blocks it when reverse-biased.
b. Zener Diode
Construction: A heavily doped P-N junction designed to operate in reverse breakdown.
Working: Maintains a constant voltage across its terminals in reverse bias.
Applications: Voltage regulation.
c. Light Emitting Diode (LED)
Construction: Made from gallium arsenide.
Working: Emits light when forward-biased.
Applications: Displays, indicators.
5. Explain the forward and reverse biasing of diodes and illustrate their V-I characteristics.
Answer:
• Forward Bias: The P-side of the diode is connected to the positive terminal, and the N-side
is connected to the negative terminal. Current flows.
• Reverse Bias: The P-side is connected to the negative terminal, and the N-side to the
positive terminal. Current does not flow.
V-I Characteristics:
• Forward region: Current increases exponentially after the threshold voltage.
• Reverse region: Small leakage current flows until breakdown occurs.
10. Discuss the concept of the depletion region and barrier potential in a P-N junction diode.
Answer:
• Depletion Region: Area around the P-N junction where free carriers are depleted, forming
immobile ions.
• Barrier Potential: Voltage required to overcome the potential difference across the depletion
region, typically 0.7V for silicon and 0.3V for germanium.