PHYSICAL REVIEW B 93, 085138 (2016)

Collective modes in nodal line semimetals

Zhongbo Yan,1 Peng-Wei Huang,1 and Zhong Wang1,2,*
1
Institute for Advanced Study, Tsinghua University, Beijing 100084, China
2
Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
(Received 1 December 2015; published 26 February 2016)

Recently, the nodal line semimetals have attracted considerable interest in condensed matter physics. We show
that their distinct band structure can be detected by measuring the collective modes. In particular, we find that
the dependence of the plasmon frequency ωp on the electron density n follows a ωp ∼ n1/4 law in the long
wavelength limit. Our results will be useful in the ongoing search for new candidates of nodal line semimetals.

DOI: 10.1103/PhysRevB.93.085138

I. INTRODUCTION Considering the unique band structures of the nodal

line semimetals, which are significantly different from both
During the past decade topological insulators have gen-
the ordinary metals with large Fermi surfaces and Weyl
erated intense interest in condensed matter physics [1–3].
semimetals with nodal points, it is natural to study the behavior
These novel classes of material have insulating bulk but a
of collective modes, including the plasmon. In the case of
robustly metallic surface. This peculiar feature has its origin in
three-dimensional Dirac and Weyl semimetals, the plasmon
the topological nontriviality of the band structures, described
frequency in the long-wavelength limit follows the ωp ∼ n1/3
in terms of topological invariants [4–13]. Since the bulk
law [76], where ωp is the plasmon frequency and n is the
samples of topological insulators are quite inert, all the highly
electron density, which is distinct from the usual ωp ∼ n1/2
interesting phenomena are produced by the topological surface
behavior of an ordinary electron liquids. In this paper we study
states.
the plasmon in the nodal line semimetals, and find a ωp ∼ n1/4
More recently, the topological properties of several classes
law for the plasmon frequency in the regime that the interband
of semimetals have been recognized and discovered experi-
contribution can be neglected. In the regime of very small
mentally, among which are the topological Dirac semimet-
doping, for which the interband contribution is important, the
als [14–24] and Weyl semimetals [25–29]. In the Weyl
dispersion crosses over to a ωp ∼ n1/2 law. These features
semimetals, there exist topologically protected band touching
of the collective modes are useful in establishing additional
points, termed as the Weyl points, which serve as magnetic
candidates for the nodal line semimetals.
monopoles of the Berry gauge field in the reciprocal space.
The rest of this paper is organized as follows. In Sec. II we
They exhibit novel transport and optical phenomena induced
present our results of the polarizablity. Based on these results
by chiral anomaly [30–41]. The locations of Weyl points
we study the behavior of the plasmon in Sec. III, obtaining the
are tunable by the environmental conditions such as pressure
dependence of plasmon frequency on the electron density.
and magnetic field, but it is impossible to eliminate a single
Weyl point without breaking the translational symmetry of the
crystals [33,34,42–45]. The real materials of Weyl semimetal II. THE MODEL OF NODAL LINE SEMIMETAL
have been discovered very recently [46–55]. (Meanwhile, AND THE POLARIZABILITY
the photonic analog of Weyl semimetals has also been
We study a continuous model with the Hamiltonian [74]
discovered [56–58].)  †
given by H = k  ˆ k H0 (k) ˆ †k = (ĉk↑
ˆ k with  † †
,ĉk↓ ) and
Another class of topological semimetal in three spatial
dimensions is the topological nodal line semimetal [59–75],
which features a line of band-touching points in the band H0 (k) = (m − Bk⊥
2
)σx + kz σz , (1)
structure. Unlike the Weyl points in Weyl semimetals, certain
where k⊥ 2
= kx2 + ky2 , σx and σz are Pauli matrices, and m
symmetries are required to ensure the stability of the gapless
and B are positive constants with the dimension of energy
nodal lines [68,74] in semimetals. Partially gapping out
and the inverse of energy, respectively. A sketch of the Fermi
the nodal lines can leave certain isolated points gapless,
surface at nonzero chemical potential is shown in Fig. 1. This
realizing the Weyl semimetal [46]. In this sense, the nodal
Hamiltonian can be diagonalized by a simple transformation:
line semimetals can be regarded as intermediate systems
bridging the conventional metals and Weyl semimetals. Mean-     
ĉk↑ cos θk − sin θk ĉ+,k
while, the nodal line phases have also been proposed in = , (2)
ĉk↓ sin θk cos θk ĉ−,k
the photonic crystals [57,58], which pave the way for the
construction of photonic Weyl crystals. Several materials, with θk = 12 arctan[(m − Bk⊥
2
)/kz ]. The diagonalized Hamil-
including Cu3 PdN [67,68] and Ca3 P2 [70], have emerged as tonian reads
candidates of the nodal line semimetals.  †
H = αEk ĉα,k ĉα,k (3)
kα

*
[email protected] with Ek = 2
(Bk⊥ − m)2 + kz2 and α = +,−.

2469-9950/2016/93(8)/085138(9) 085138-1 ©2016 American Physical Society

ZHONGBO YAN, PENG-WEI HUANG, AND ZHONG WANG PHYSICAL REVIEW B 93, 085138 (2016)

polarizability at finite temperature (kB T ≡ 1/β):

1  f (αEk+q ) − f (α Ek )
P (q,ω) =
2v k,αα ω + αEk+q − α Ek + iη

× (1 + αα cos 2δθkq ), (5)

where δθkq = θk+q − θk , f (E) = 1/(1 + e β(E−μ)
) is the
Fermi-Dirac distribution function with μ the chemical poten-
tial, and α,α take the two values +,−. A small imaginary part
iη is introduced to account for the decay of quasielectrons.
At zero temperature, the chemical potential μ is equivalent to
the Fermi energy EF . In the following, we shall focus on the
FIG. 1. An illustration of the Fermi surfaces of a nodal line cases of EF > 0, while the cases of EF < 0 are essentially
semimetal, for nonzero Fermi energy EF . equivalent. The plasmon frequency is determined by
(q,ω) ≡ 1 − v(q)P (q,ω) = 0, (6)
indicating the presence of self-sustaining collective modes. In
In the imaginary frequency, the lowest-order polarizability this work we shall be most interested in the long wave-length
is given as limit q → 0.
There are four contributions to P (q,ω), corresponding
 β to α,α = +,− in Eq. (5). In the zero-temperature limit,
1
P (q,iω) = − dτ eiωτ Tτ ρ̂(q,τ )ρ̂(−q,0), (4) only three of them are nonzero, which are the intraband
v part P++ (q,ω) and the two interband parts P+− (q,ω) and
0

P−+ (q,ω). In the regime max{2 1 + EmF qx,y ,qz } < ω < 2EF ,
where v is the volume of the system, and ρ̂(q,τ ) =
 † we can see that ImP (q,ω) = 0, and thus we only need to calcu-
kσ ĉk+qσ (τ )ĉkσ (τ ). Standard calculations lead to the late the real part of P (q,ω). For the ++ part P++ (q,ω) we have


1  f (Ek+q ) − f (Ek )
ReP++ (q → 0,ω) = Re (1 + cos 2δθkq )
2v k ω + Ek+q − Ek + iη

1  (EF − Ek+q ) − (EF − Ek )
= Re (1 + cos 2δθkq )
2v k ω + Ek+q − Ek + iη
 ∞  
dy 2(y + m)y 2 q⊥2 EF2 − y 2 qz2 EF
= 2 2 2
+ 2 2
 EF2 − y 2 . (7)
−m 4π EF ω EF Bω E2 − y2 F

When EF < m, we obtain that (see the Appendix A) where g1,2,3 are three dimensionless functions:
⊥
ReP++ (q → 0,ω) = C++ q⊥2 + C++ qz2 2
z
(8)
g1 (x) = 1 − x 2 (2 + x 2 ),
3
with q⊥2 = qx2 + qy2 ,
1π  
g2 (x) = + arcsin x − x 1 − x 2 ,
⊥ EF2 m̃ 2 2
=
1π  
C++ , (9)
4π ω2
g3 (x) = + arcsin x + x 1 − x 2 . (12)
and 2 2

EF2 Another contribution to the polarizability, P+− , is given by

z
C++ = , (10)
8π ω2 B̃
P+− (q → 0,ω)
where we have defined the dimensionless quantities m̃ ≡ 1  f (Ek+q ) − f (−Ek )
m/EF , and B̃ ≡ BEF . = (1 − cos 2δθkq )
On the other hand, when EF > m we find that 2v k ω + Ek+q + Ek + iη

EF2 q⊥2 EF2 m̃q⊥2 1  (EF − Ek+q ) − 1

ReP++ (q → 0,ω) =
1
+ = (1 − cos 2δθkq )
4π 2
g 1 ( m̃)
ω2
g 2 ( m̃)
ω2 2v k ω + Ek+q + Ek + iη

EF2 qz2 1  −1
+ g3 (m̃) , (11) = (1 − cos 2δθkq ), (13)
B̃ω2 2v [k] ω + 2Ek + iη

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COLLECTIVE MODES IN NODAL LINE SEMIMETALS PHYSICAL REVIEW B 93, 085138 (2016)

where [k] denotes the summation (or integral) over k with the Similarly, we also find that
variable restricted to the region Ek > EF . Similarly, the last ⊥
ReP−+ (q → 0,ω) = C−+ q⊥2 + C−+
z
qz2 (20)
contribution to the polarizability is
1  1 with
P−+ (q → 0,ω) = (1 − cos 2δθkq ),  1  +∞
2v [k] ω − 2Ek + iη 1
z
C−+ = d x̃ √ d z̃
16π 2 B̃ −1 1−x̃ 2
(14)  +∞  −1   +∞
In the q → 0 limit, (1 − cos 2δθkq ) can be safely expanded + + d x̃ d z̃
as (1 − cos 2δθkq ) = [(m−Bk )qz −2Bk
2 2
⊥ q⊥ kz cos φ] 1 −m̃ 0
2Ek4
, where φ is the
angle between the projection of k and q to the kx -ky plane, and ω̃ − 2Ẽk x̃ 2
× (21)
thus we have (ω̃ − 2Ẽk )2 + η̃2 (x̃ 2 + z̃2 )2
ReP+− (q → 0,ω) and
   
1  ω + 2Ek ⊥
1 +∞ −1 +∞
=− C−+ = d x̃ √ d z̃ + d x̃ d z̃
2v [k] (ω + 2Ek )2 + η2 −1 1−x̃ 2 −m̃ 0
 ˜  ˜

[(m − 2
Bk⊥ )qz − 2Bk⊥ q⊥ kz cos φ] 2  
1 ω̃ − 2Ẽk (x̃ + m̃)z̃2
× (15) + d x̃ d z̃ .
2Ek4 1 0 8π 2 (ω̃ − 2Ẽk )2 + η̃2 (x̃ 2 + z̃2 )2
and (22)
ReP−+ (q → 0,ω) To suppress the formalism, let us define
1  ω − 2Ek CTz = C+−
z
+ C−+
z
,
=
2v [k] (ω − 2Ek )2 + η2
CT⊥ = C+−
⊥ ⊥
+ C−+ . (23)
[(m − − 2Bk⊥ q⊥ kz cos φ]
2
Bk⊥ )qz 2
Now we can make an expansion in ω̃ and obtain the following
× . (16)
2Ek4 analytic results:
The small imaginary part η is relevant only for P−+ , because    
1 π 2 π 2
there exists a resonance at ω = 2Ek in P−+ ; therefore, we omit CTz = − − + − ω̃2 ,
iη in ReP++ and ReP+− . In addition, we notice that there exists 16π 2 B̃ 2 3m̃ 24 45m̃3
   
a logarithmic divergence in both ReP+− and ReP−+ , which ⊥ 1 π 1
is due to the presence of the infinite Dirac sea, an artifact CT = − 2 [C1 (m̃) + f ()] +˜ + ω̃2 , (24)
8π 24 180m̃2
of the continuous model; therefore, we introduce a cutoff as
log m̃
follows: k⊥2 2
< k⊥,c 2
and kz < kz,c , with Bk⊥,c = kz,c = . For where C1 (m̃) = π m̃
2
−
+ C, with C = 3√1 2 − 13 −
3
the simplicity of notations, we also introduce dimensionless arc sinh 1 = −0.98, and f () ˜ − √ ˜ . We
˜ = arc sinh 
quantities ω̃ = ω/EF , x̃ ≡ (Bk⊥ 2
− m)/EF , z̃ ≡ kz /EF , η̃ ≡ 2 ˜
1+
η/EF and  ˜ = /EF . ˜ is a monotonically increasing function, and
remark that f ()
In the regime EF < m, ReP+− can be simplified to ˜ ∼ log 
f () ˜ when  ˜ is large.1 Now that the polarizability
⊥
P (q,ω) have both the intraband part and the interband part,
ReP+− (q → 0,ω) = C+− q⊥2 + C+−
z
qz2 (17) we would like to quantify their ratio by
 z 
with C 
  z (ω̃) =  ++ ,
1 1 +∞
CTz 
z
C+− =− d x̃ √ d z̃  ⊥ 
16π 2 B̃ −1 1−x̃ 2 C 
 +∞  −1   ⊥ (ω̃) =  ++ . (25)
CT⊥ 
+∞
+ + d x̃ d z̃
1 −m̃ 0 As long as z and ⊥ >> 1, the intraband contribution
ω̃ + 2Ẽk x̃ 2 P++ dominates. As shown in Fig. 2, when ω̃ << 2, both
× , (18) z and ⊥ >> 1, which indicates that the intraband process
(ω̃ + 2Ẽk )2 (x̃ 2 + z̃2 )2
√ dominates the polarizability. On the other hand, if ω̃ → 2,
where Ẽk = x̃ 2 + z̃2 (since the integral is convergent, we then the interband contribution is comparable to the intraband
have put the upper-limit of integration to infinity), and process. It is interesting to note that the value of m̃ have
 1  +∞  −1  +∞ opposite effect in the z direction and the in-plane directions.
⊥
C+− = d x̃ √ d z̃ + + d x̃ d z̃ As we increase m̃, the region of ω̃ for which z < 1 expands,
−1 1−x̃ 2 −m̃ 0 while the region for which ⊥ < 1 shrinks.
 ˜  ˜

 
−1 ω̃ + 2Ẽk (x̃ + m̃)z̃2
+ d x̃ d z̃ .
1 0 8π 2 (ω̃ + 2Ẽk )2 (x̃ 2 + z̃2 )2 1
The logarithmical growth is quite slow, e.g., f (100) = 4.3, and
(19) f (1000) = 6.6.

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ZHONGBO YAN, PENG-WEI HUANG, AND ZHONG WANG PHYSICAL REVIEW B 93, 085138 (2016)

Definingthe fine structure constant αs =e2 /κ, we have

−1 √ −1 √
ωp,⊥ = (1 − ⊥ )αs m EF and ωp,z = (1−2Bz )αs EF ,
which are in fact a self-consistent equation because ⊥ and
z themselves are functions of ω and EF . More explicitly, and
in terms of the dimensionless quantities,

−1
ω̃p,⊥ = [1 − ⊥ (ω̃p,⊥ )]αs m̃,
 (28)
−1
[1 − z (ω̃p,z )]αs
ω̃p,z = ,
2B̃
We shall focus on the EF < m regime, which is the most
interesting regime, since we are most concerned with the
physics dominated by the nodal line (when EF > m, the
topology of the Fermi surface is no longer a torus). When
EF < m, the electron density can be obtained as
EF2
n= ; (29)
8π B
therefore, we obtain
√
−1
ωp,⊥ = ( 8π B(1 − ⊥ )αs m)n1/4 ,
⎛ ⎞
2π
ωp,z = ⎝ 1 − z−1 αs ⎠n1/4 . (30)
B

The dependence of ωp,⊥ and ωp,z for two sets of parameters

FIG. 2. (a) z vs ω̃. From red line to blue line, m̃ = 1,2,3,4,5. is shown in Fig. 3.
(b) ⊥ vs ω̃, the color labeling scheme is the same as in panel (a). For It is readily seen that
both panels (a) and (b),  ˜ = 10, and the dashed line corresponds to 
z(⊥) = 1. ωp,⊥ √ −1
(1 − ⊥ )
= 2Bm −1
. (31)
ωp,z 1 − z
Because the interband contributions have opposite sign If the contribution from interband process can be neglected,
−1
to the intraband contribution, i.e., they are negative, z < 1 i.e., ⊥(z) is taken as zero, then it is found that
or ⊥ < 1 indicates the absence of plasmonic modes in the √
respective directions (see the next section). ωp,⊥ = ( 8π Bαs m)n1/4 ,
⎛  ⎞
2π
III. PLASMON FREQUENCY
ωp,z = ⎝ αs ⎠n1/4 . (32)
B
Based on the results above, the total polarization function
P (q → 0,ω) in the region 0 < ω̃ < 2 is given as
The ωp ∼ n1/4 law of plasmon frequency is among the central
−1 ⊥
P (q → 0,ω) = (1 − ⊥ )C++ q⊥2 + 1− z−1 z
C++ qz2 results of this paper. As shown in Figs. 3 and 4, the self-
consistently determined plasmon frequency agrees with the
−1
(1 − ⊥ ) EF m 2 1 − z−1 EF 2 ωp ∼ n1/4 law as long as the doping level is not very low. It is
= q⊥ + q .
4π ω2 8π Bω2 z well known that the plasmon frequency follows the n1/2 law in
(26) an ordinary electron liquid, and it has also been found that the
plasmon frequency of a massless Dirac electron liquid follows
Inserting this equation into the random-phase-approximation the n1/3 law [76]. In contrast to these materials, we find a
(RPA) equation, Eq. (6), with v(q) = 4πe
2
, we obtain the ωp ∼ n1/4 law for the plasmon in the nodal line semimetals.
κq 2
plasmon frequency In very low doping regime, i.e., n, or say EF , is quite
small, and from Figs. 3(b) and 3(d) we can already see that
 the interband effect becomes important; consequently, the
−1 2 
(1 − ⊥ )e m power-law relation will deviate from the ωp ∼ n1/4 law which
ωp,⊥ = EF ,
κ holds in most doping regime. To see this more explicitly, we
 consider the very low doping regime where m̃ >> 1, B̃ << 1
1 − z−1 e2  and derive the analytic expressions of the plasmon frequencies.
ωp,z = EF . (27)
2Bκ As m̃ >> 1, B̃ << 1, from Eq. (30), it is readily seen that the

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COLLECTIVE MODES IN NODAL LINE SEMIMETALS PHYSICAL REVIEW B 93, 085138 (2016)

FIG. 4. The log ωp - log n plot. Common parameters: α = 0.1,

mB = 5, m2 = 8π B, /m = 10, and n = (EF /m)2 . The red solid
lines are the self-consistent solution of the plasmon frequencies. The
green dashed lines are the fitting to Eq. (34) (the n1/2 power law),
while the blue dash-dotted lines are the fits to Eq. (32) (the n1/4 power
law). We can see that the plasmon frequencies crossovers from the
n1/2 law in the regime of very small doping to the n1/4 law in the
regime of larger doping.

condition for existence of self-consistent solution in the regime

0 < ω̃ < 2 puts the following constraints on p,⊥ and p,z :
4 −1
1− < p,⊥ < 1,
αs m̃
8B̃ −1
1− < p,z < 1. (33)
αs
In the very low doping regime, the two constraints indicates
that both p,⊥ and p,z goes to 1. With the assump-
tion that /m is fixed and m̃ >> 1/B̃, a combination of
Eqs. (9), (10), (24), (25), and (28) gives the self-consistent
FIG. 3. The ω vs n plot and the ratios among the relevant solutions, to the first order of the two small quantities 1/αs m̃
frequencies, for two values of B: B = 1 for panels (a) and (b), and B̃/αs (details are given in Appendix C):
and B = 0.2 for panels (c) and (d). Common parameters: αs = 0.1, 3
ω̃⊥,c 1
m = 1,  = 10m, and EF is varied from 0.03 to 1. Here ωp,x(y) ω̃p,⊥ = ω̃⊥,c − ,
and ωp,z denote the plasmon frequencies calculated self-consistently 2 αs m̃
(see the text), while ωo,x(y) and ωo,z denote the plasmon frequencies 24ω̃z,c B̃
determined by taking into account only the intraband part of the ω̃p,z = ω̃z,c − , (34)
−1
polarizability; i.e., ⊥(z) is set to zero. From panels (b) and (d), it 7 αs

is clear that ωo /ωp ≈ 1 as long as n is not very small; therefore, it
 √ ω̃⊥,c = 2/ 1 + [2 log()/π m̃] ≈ 2 and ω̃z,c =
with ˜
is accurate to omit the interband contribution for most of the values
of n. 2( 21 − 3) ≈ 1.78. With the quite small first-order term

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ZHONGBO YAN, PENG-WEI HUANG, AND ZHONG WANG PHYSICAL REVIEW B 93, 085138 (2016)

neglected, Eq. (34) indicate that in the very low doping line semimetal in three dimensions, it is quite different in the
regime, momentum space (q space): In three dimensions the q-space
Coulomb potential is v3d (q) ∝ q −2 , while in two dimensions
ωp,⊥(z) ∼ EF ∼ n1/2 . (35) it is v2d (q) ∝ q −1 . The plasmon frequencies determined by
Eq. (6) are thus significantly different in two and three
To be more quantitative, we perform numerical calculations dimensions; in particular, the two-dimensional plasmon is
of the original Eq. (28) for a broad range of of n, and fit the gapless, while the three-dimensional plasmon is gapped.
plasmon frequencies to Eqs. (32) and (34) [see Fig. 4]. In
the very low density regime, log(ωp,⊥ ) and log(ωp,z ) are well
IV. CONCLUSIONS
fitted by the green dashed lines whose slope is 1/2, indicating
ωp,⊥(z) ∼ n1/2 ; while in the regime log(n)  −2, i.e., EF /m  In conclusion, we have studied the plasmon modes in the
0.1, both log(ωp,⊥ ) and log(ωp,z ) are well fitted by the blue nodal line semimetals. The dependence of plasmon frequency
dash-dotted lines whose slope is 1/4, indicating ωp,⊥(z) ∼ n1/4 . on the electron density generally follows a ωp ∼ n1/4 law in the
In other words, the plasmon frequencies crossovers from the regime of modest doping, in contrast to the ordinary electron
n1/2 law in the regime of very small doping, for which the liquids and the Dirac-Weyl electron liquids. In the regime
interband contribution is important, to the n1/4 law in the of very small doping, for which the interband contribution
regime of larger doping, for which the intraband contribution is important, this ωp ∼ n1/4 law crosses over to a ωp ∼
dominates. n1/2 law. The unique features of plasmons will be useful
Finally, we remark that the plasmon frequency is also in identifying topological nodal line semimetals using the
proportional to n1/4 in graphene [77]; however, there is a major plasmonics methods.
difference between the plasmon in the graphene and that in Note added. Recently, we became aware of a closely related
the nodal line semimetal. For the graphene, the plasmon is a work [78] by Jun-Won Rhim and Yong Baek Kim.
gapless mode in the long wavelength limit (Its frequency is
proportional to n1/4 q 1/2 ); for the latter, the plasmon is gapped. ACKNOWLEDGMENTS
The difference has a simple origin. Although the Coulomb This work is supported by NSFC under Grant No. 11304175
potential takes the same real-space form of 1/r in both the and the Tsinghua University Initiative Scientific Research
case of graphene in two dimensions and the case of nodal Program.

APPENDIX A: CALCULATIONS OF THE POLARIZABILITY

The interband contribution ReP++ (q,ω) can be obtained as follows:

1  f (Ek+q ) − f (Ek )
ReP++ (q → 0,ω) = Re (1 + cos 2δθkq )
2v k ω + Ek+q − Ek + iη

1  (EF − Ek+q ) − (EF − Ek )
= Re (1 + cos 2δθkq )
2v k ω + Ek+q − Ek + iη

1  δ(EF − Ek ) ∂kβ qβ
∂Ek

−
v k ω + ∂E k
∂kγ γ
q
 
1 ∂Ek qβ ∂Ek qγ
− 1− δ(EF − Ek )
v k ∂kβ ω ∂kγ ω
   
d 3k B 2 kx2 qx2 B 2 ky2 qy2 kz2 qz2
= 4 + (m − Bk 2 2
⊥ ) +
(2π )3 EF2 ω2 EF2 ω2 EF2 ω2
EF  
× [δ(kz − kz,0 ) + δ(kz + kz,0 )] EF2 − (m − Bk⊥ 2 2
)
kz,0
 ∞ 2 2 2 2  2  
dk⊥ 2B k⊥ q⊥ EF − (m − Bk⊥ 2 2
) qz2 EF  2 
= 2 2 2
(m − Bk⊥ ) +
2 2
2 2
 EF − (m − Bk⊥
2 2
)
0 4π EF ω EF ω EF2 − (m − Bk⊥
2 2
)
 ∞    
dx 2x(x − m)2 q⊥2 EF2 − (m − x)2 qz2 EF  2 
= 2 2 2
+ 2 2
 EF − (m − x)2
0 4π EF ω EF Bω EF2 − (m − x)2
 ∞  
dy 2(y + m)y 2 q⊥2 EF2 − y 2 qz2 EF
= 2 2 2
+ 2 2
 EF2 − y 2 . (A1)
−m 4π E F ω EF Bω E − y2
2
F

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For simplicity of notation, we have defined kz,0 = EF2 − (m − Bk⊥ ) , x = Bk⊥
2 2 2
, and y = x − m. When two subscripts are
same, the Einstein summation convention is assumed.
When EF < m, we obtain
 +EF  
dy 4(y + m)y 2 q⊥2 EF2 − y 2 qz2 EF
ReP++ (q → 0,ω) = 2 2 2
+ 2 2

−EF 4π 2EF ω EF Bω E2 − y2 F
 +π/2
dθ 2 q⊥
2 qz2
= 2
EF 2(E F sin θ + m) sin θ + cos 2
θ
−π/2 4π ω2 Bω2
 
1 2EF mq⊥2 EF qz2 ⊥
= + = C++ q⊥2 + C++z
qz2 (A2)
8π ω2 Bω2
⊥ E 2 m̃ EF2
with C++ = 4πω
F
2 and C++ =
z
8πω2 B̃
.
When EF > m, we obtain
  
+EF EF2 − y 2 qz2
dy 4(y + m)y 2 q⊥2 EF
ReP++ (q → 0,ω) = 2 2 2
+ 2 2

−m 4π 2EF ω EF Bω E2 − y2
F
 +π/2
dθ 2 q⊥
2 qz2
= 2
2(E F sin θ + m)E F sin θ + E F cos 2
θ
− arcsin Em 4π ω2 Bω2
F
     
1 m EF2 q⊥2 m EF mq⊥2 m EF qz2
= g 1 + g 2 + g 3 , (A3)
4π 2 EF ω2 EF ω2 EF Bω2

where g1,2,3 are three dimensionless functions with when EF > m,

2  +π/2
g1 (x) = 1 − x 2 (2 + x 2 ), 1 E2
3 n= 2
dθ F cos2 θ
(2π ) − arcsin Em B
1π   F

g2 (x) = + arcsin x − x 1 − x 2 , E 2 1 arcsin(m/EF ) m 

2 2 = F + + 1 − (m/EF )2 .
1π   8π B 2 π π EF
g3 (x) = + arcsin x + x 1 − x 2 . (A4)
2 2 (B3)

APPENDIX C: DERIVATION DETAILS OF EQ. (34)

APPENDIX B: ELECTRON DENSITY
In this Appendix we provide the derivation of ω̃p,z in the low
The density of conduction-band electron is given by
 doping regime [Eq. (34)]. Taking advantage of the requirement
d 3k that p,z goes to 1 in the very low doping regime where m̃ >>
n= θ (EF − Ek ) 1, B̃ << 1, a combination of Eqs. (9), (10), (24), and (25) in
(2π )3
 +∞  √EF2 −(m−Bk⊥2 )2 the main text leads to
1  
= k⊥ dk⊥ √ −1 1 2 4 1 4
(2π )2 0 − EF2 −(m−Bk⊥
2 2
) p,z = ω̃p,z 1 − + − 2
ω̃p,z → 1,
4 3π m̃ 12 45π m̃3
× dkz θ (EF − |m − Bk⊥ 2
|) (C1)
 +∞ 
1
= dk⊥2
EF2 − (m − Bk⊥ ) θ (EF − |m − Bk⊥
2 2 2
|) Since m̃ >> 1 in the low doping regime, all terms containing
(2π )2 0 m̃ can be neglected, and Eq. (C1) reduces to

 +∞ EF2 − x 2 2
ω̃p,z 1+ 1 2
ω̃ → 4. (C2)
1 12 p,z
= dx θ (EF − |x|); (B1)
(2π )2 −m B
 √straightforward calculation gives ω̃p,z → ω̃z,c =
A
when EF < m, 2( 21 − 3) ≈ 1.78.
 To satisfy the self-consistent condition Eq. (28) in the main
 +EF EF2 − x 2 −1
1 text, both ω̃p,z and p,z should be kept to first order of B̃/αs .
n= dx
(2π )2 −EF B Suppose that ω̃p,z takes the form of
 +π/2
1 EF2 EF2 B̃
= dθ cos2 θ = ; (B2) ω̃p,z = ω̃z,c + β , (C3)
(2π )2 −π/2 B 8π B αs

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ZHONGBO YAN, PENG-WEI HUANG, AND ZHONG WANG PHYSICAL REVIEW B 93, 085138 (2016)

where β is a constant to be determined. Bringing this form Therefore, for B̃/αs << 1, the self-consistent solution to the
back to Eq. (28), we find first order of B̃/αs << 1 is given as
 2  24ω̃z,c B̃
−1 2 B̃ B̃ ω̃p,z = ω̃z,c − . (C6)
p,z = 1 − 2ω̃z,c +O . (C4) 7 αs
αs αs
Similar procedures for ωp,⊥ gives, to the first order of 1/αs m̃,
As B̃/αs << 1, the second-order term can be safely neglected. −1 1
−1 p,⊥ = 1 − ω̃⊥,c
2
,
We can see that p,z in Eq. (C4) satisfies the requirement given αs m̃
in Eq. (33). To determine the concrete value of β, we bring 3
ω̃⊥,c 1
Eqs. (C3) and (C4) back into Eq. (C1) and find that ω̃p,⊥ = ω̃⊥,c − , (C7)
2 αs m̃
24ω̃z,c 
β=− . (C5) with ω̃⊥,c = 2/ 1 + [2 log()/π
˜ m̃] ≈ 2.
7

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