SGP30N60HS SGW30N60HS

High Speed IGBT in NPT-technology

30% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution High ruggedness, temperature stable behaviour Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V 600V IC 30 30 Eoff) 480J 480J Tj 150C 150C Package TO-220AB TO-247AC Ordering Code Q67040-S4500 Q67040-S4501
P-TO-220-3-1 (TO-220AB) P-TO-247-3-1 (TO-247AC)

Type SGP30N60HS SGW30N60HS Maximum Ratings Parameter

Symbol VCE IC

Value 600 41 30

Unit V A

Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 150C Avalanche energy single pulse IC = 20A, VCC=50V, RGE=25 start TJ=25C Gate-emitter voltage static transient (tp<1s, D<0.05) Short circuit withstand time1) VGE = 15V, VCC 600V, Tj 150C Power dissipation TC = 25C Operating junction and storage temperature Time limited operating junction temperature for t < 150h Soldering temperature, 1.6mm (0.063 in.) from case for 10s

ICpuls EAS

112 112 165 mJ

VGE tSC Ptot Tj , Tstg Tj(tl) -

20 30 10 250 -55...+150 175 260

V s W C

1)

Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Preliminary / Rev.1 May-03

Power Semiconductors

SGP30N60HS SGW30N60HS
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction case Thermal resistance, junction ambient RthJA TO-220AB TO-247AC 62 40 RthJC 0.5 K/W Symbol Conditions Max. Value Unit

Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0 V , I C =500 A VCE(sat) V G E = 15 V, I C =30A T j = 25C T j = 150 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C =700 A,V C E =V G E V C E = 60 0 V,V G E = 0 V T j = 25C T j = 150 C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current1) IC(SC) V G E =15V,t S C 1 0 s V C C 60 0V, T j 150 C 220 A Ciss Coss Crss QGate LE V C E =25V, VGE=0V, f=1MHz V C C = 48 0 V, I C =30A V G E =15V T O-2 47 AC 13 nH 1500 150 92 141 nC pF IGES gfs V C E = 0 V , V G E =20V V C E =20V, I C =30A 20 40 3000 100 nA S 3 2.8 3.5 4 3.15 4.00 5 A 600 V Symbol Conditions Value min. Typ. max. Unit

1)

Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Preliminary / Rev.1 May-03

Power Semiconductors

SGP30N60HS SGW30N60HS
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j = 25C , V C C = 40 0 V, I C =30A, V G E = 0 /1 5 V, R G = 1 1 L 1 ) =6 0nH , C 1 ) =40pF Energy losses include tail and diode reverse recovery. 20 21 250 25 0.60 0.55 1.15 mJ ns Symbol Conditions Value min. typ. max. Unit

Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets T j = 150 C V C C = 40 0 V, I C =30A, V G E = 0 /1 5 V, R G = 1 .8 L 1 ) =6 0nH , C1) =40pF Energy losses include tail and diode reverse recovery. T j = 150 C V C C = 40 0 V, I C =30A, V G E = 0 /1 5 V, R G = 1 1 L 1 ) =6 0nH , C1) =40pF Energy losses include tail and diode reverse recovery. 16 13 122 29 0.78 0.48 1.26 20 19 274 27 0.91 0.70 1.61 mJ ns mJ ns Symbol Conditions Value min. typ. max. Unit

1)

Leakage inductance L a nd Stray capacity C due to test circuit in Figure E. 3 Preliminary / Rev.1 May-03

Power Semiconductors

SGP30N60HS SGW30N60HS
100A
100A

tP=4s 15s

IC, COLLECTOR CURRENT

80A

IC, COLLECTOR CURRENT

T C=80C

10A

50s 200s 1ms

60A

T C=110C

40A

Ic

1A

20A

Ic
10Hz 100Hz 1kHz 10kHz 100kHz

DC 0,1A 1V

0A

10V

100V

1000V

f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 11)

VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C; VGE=15V)

Limited by Bond wire

40A
200W

IC, COLLECTOR CURRENT

5 0 C 7 5 C 1 0 0 C 1 2 5 C

POWER DISSIPATION

30A

150W

100W

20A

Ptot,

50W

10A

0W 2 5 C

0A 25C

75C

125C

TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C)

TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C)

Power Semiconductors

Preliminary / Rev.1 May-03

SGP30N60HS SGW30N60HS
80A 70A 60A 50A 40A 30A 20A 10A 0A 0V 2V 4V 6V V GE=20V 15V 13V 11V 9V 7V 5V

80A 70A

IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

60A 50A 40A 30A 20A 10A 0A 0V

VGE=20V 15V 13V 11V 9V 7V 5V

2V

4V

6V

VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C)

VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 150C)

VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE

5,5V 5,0V 4,5V 4,0V 3,5V 3,0V 2,5V 2,0V 1,5V 1,0V -50C 0C 50C 100C 150C I C =15A I C =30A I C =60A

80A

T J = -5 5 C 2 5 C 1 5 0 C

IC, COLLECTOR CURRENT

60A

40A

20A

0A 0V

2V

4V

6V

8V

VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=10V)

TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)

Power Semiconductors

Preliminary / Rev.1 May-03

SGP30N60HS SGW30N60HS
td(off)

t, SWITCHING TIMES

100ns

t, SWITCHING TIMES

100 ns

td(off)

tf

tf

td(on) tr 10ns 0A 10A 20A 30A 40A 50A

10 ns

td(on) tr
0 5 10 15 20 25

IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=150C, VCE=400V, VGE=0/15V, RG=11, Dynamic test circuit in Figure E)

RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=150C, VCE=400V, VGE=0/15V, IC=30A, Dynamic test circuit in Figure E)

5,5V

td(off)

VGE(th), GATE-EMITT TRSHOLD VOLTAGE

5,0V 4,5V 4,0V 3,5V 3,0V 2,5V 2,0V 1,5V 1,0V -50C 0C 50C 100C min. 150C typ. max.

t, SWITCHING TIMES

100ns

tf tr td(on) 10ns 0C

50C

100C

150C

TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=400V, VGE=0/15V, IC=30A, RG=11, Dynamic test circuit in Figure E)

TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.7mA)

Power Semiconductors

Preliminary / Rev.1 May-03

SGP30N60HS SGW30N60HS
5,0mJ *) Eon and Ets include losses due to diode recovery

3,0 mJ

*) Eon and Ets include losses due to diode recovery

E, SWITCHING ENERGY LOSSES

4,0mJ

E, SWITCHING ENERGY LOSSES

2,5 mJ 2,0 mJ 1,5 mJ 1,0 mJ 0,5 mJ Eoff

3,0mJ Eon* 2,0mJ

Ets* Eon*

1,0mJ

Eoff

0,0mJ 0A 10A 20A 30A 40A 50A 60A

0,0 mJ

10

15

20

25

30

IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=150C, VCE=400V, VGE=0/15V, RG=11, Dynamic test circuit in Figure E)

RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=150C, VCE=400V, VGE=0/15V, IC=30A, Dynamic test circuit in Figure E)

E, SWITCHING ENERGY LOSSES

1,5mJ

Ets*

ZthJC, TRANSIENT THERMAL RESISTANCE

*) Eon and Ets include losses due to diode recovery

D=0.5 10 K/W
-1

0.2 0.1 0.05

1,0mJ

Eon*

10 K/W

-2

0.02

0.01 10 K/W
-3

0,5mJ

Eoff

R,(K/W) 0.3681 0.0938 0.038

R1

, (s) 0.0555 1.26E-03 1.49E-04

R2

single pulse 10 K/W 1s

-4

0,0mJ 0C 50C 100C 150C

C 1 = 1 /R 1 C 2 = 2 /R 2

10s

100s

1ms

10m s 100ms

TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=400V, VGE=0/15V, IC=30A, RG=11, Dynamic test circuit in Figure E)

tP, PULSE WIDTH Figure 16. IGBT transient thermal resistance (D = tp / T)

Power Semiconductors

Preliminary / Rev.1 May-03

SGP30N60HS SGW30N60HS
Ciss

VGE, GATE-EMITTER VOLTAGE

1nF
15V

120V 10V

480V

c, CAPACITANCE

Coss 100pF Crss

5V

0V 0nC

50nC

100nC

150nC

10pF 0V 10V 20V

QGE, GATE CHARGE Figure 17. Typical gate charge (IC=30 A)

VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)

IC(sc), short circuit COLLECTOR CURRENT

SHORT CIRCUIT WITHSTAND TIME

300A 250A 200A 150A 100A 50A 0A 10V

15s

10s

5s

tSC,
0s 10V 11V 12V 13V 14V

12V

14V

16V

18V

VGE, GATE-EMITETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C)

VGE, GATE-EMITETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (VCE 600V, Tj 150C)

Power Semiconductors

Preliminary / Rev.1 May-03

SGP30N60HS SGW30N60HS
TO-220AB
symbol min A B C D E F G H K L M N P T 9.70 14.88 0.65 3.55 2.60 6.00 13.00 4.35 0.38 0.95 dimensions [mm] max 10.30 15.95 0.86 3.89 3.00 6.80 14.00 4.75 0.65 1.32 min 0.3819 0.5858 0.0256 0.1398 0.1024 0.2362 0.5118 0.1713 0.0150 0.0374 [inch] max 0.4055 0.6280 0.0339 0.1531 0.1181 0.2677 0.5512 0.1870 0.0256 0.0520

2.54 typ. 4.30 1.17 2.30 4.50 1.40 2.72

0.1 typ. 0.1693 0.0461 0.0906 0.1772 0.0551 0.1071

TO-247AC
symbol min A B C D E F G H K L M N P Q 6.12 4.78 2.29 1.78 1.09 1.73 2.67 20.80 15.65 5.21 19.81 3.560 3.61 [mm]

dimensions [inch] max 5.28 2.51 2.29 1.32 2.06 3.18 21.16 16.15 5.72 20.68 4.930 6.22 min 0.1882 0.0902 0.0701 0.0429 0.0681 0.1051 0.8189 0.6161 0.2051 0.7799 0.1402 0.2409 max 0.2079 0.0988 0.0902 0.0520 0.0811 0.1252 0.8331 0.6358 0.2252 0.8142 0.1941 0.2449

0.76 max

0.0299 max

0.1421

Power Semiconductors

Preliminary / Rev.1 May-03

SGP30N60HS SGW30N60HS
1
Tj (t) p(t)

r1

r2

rn

r1

r2

rn

TC

Figure D. Thermal equivalent circuit

Figure A. Definition of switching times

Figure B. Definition of switching losses

Figure E. Dynamic test circuit Leakage inductance L =60nH a nd Stray capacity C =40pF.

Power Semiconductors

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Preliminary / Rev.1 May-03

SGP30N60HS SGW30N60HS
Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 Mnchen Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Power Semiconductors

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Preliminary / Rev.1 May-03

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