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Energy Level Formula Sheet

The document provides formulas related to energy levels in semiconductor physics, focusing on majority and minority carriers for both N-type and P-type materials. It includes temperature effects on intrinsic energy, density of states, and band gap calculations. Additionally, it outlines the position of the Fermi energy level and relevant constants for calculations.

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7 views

Energy Level Formula Sheet

The document provides formulas related to energy levels in semiconductor physics, focusing on majority and minority carriers for both N-type and P-type materials. It includes temperature effects on intrinsic energy, density of states, and band gap calculations. Additionally, it outlines the position of the Fermi energy level and relevant constants for calculations.

Uploaded by

vincereofficial01
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Energy Level Formula Sheet

1. Majority – Minority Carrier (Unit: cm-3) 3. Temperature Effect


a. N – type (Nd > Na) a. Intrinsic Energy
Majority Carrier (Electron): −𝐸𝑔
• if Nd – Na >> ni (Complete 𝑛𝑖 2 = 𝑁𝑐 𝑁𝑣 𝑒𝑥𝑝 [ ]
𝑘𝑇
ionization): b. Density of State
𝑛𝑜 = 𝑁𝑑 − 𝑁𝑎 𝑇𝑛𝑒𝑤 3
𝑁𝑐 𝑛𝑒𝑤 = 𝑁𝑐 𝑜𝑙𝑑 ( )2
• else: 𝑇𝑜𝑙𝑑
𝑇𝑛𝑒𝑤 3
(𝑁𝑑 − 𝑁𝑎 ) 𝑁𝑑 − 𝑁𝑎 2 𝑁𝑣 𝑛𝑒𝑤 = 𝑁𝑣 𝑜𝑙𝑑 ( )2
𝑛𝑜 = + √( ) + 𝑛𝑖 2 𝑇𝑜𝑙𝑑
2 2 c. Band Gap
Minority Carrier (Hole): 𝑎𝑇 2
𝑛𝑖 2 𝐸𝑔 (𝑇) = 𝐸𝑔 (0) −
𝑇+𝛽
𝑝𝑜 =
𝑛𝑜
b. P – type (Na > Nd) Germanium Silicon GaAs
Majority Carrier (Hole):
• if Na – Nd >> ni (Complete 𝐸𝑔 (0) (𝑒𝑉) 0.7437 1.166 1.519
ionization): 𝑚𝑒𝑉
𝑎( ) 0.477 0.473 0.541
𝑝𝑜 = 𝑁𝑎 − 𝑁𝑑 𝐾
• else: 𝛽(𝐾) 235 636 204
(𝑁𝑎 − 𝑁𝑑 ) 𝑁𝑎 − 𝑁𝑑 2
𝑝𝑜 = + √( ) + 𝑛𝑖 2
2 2
Minority Carrier (Electron):
𝑛𝑖 2
𝑛0 =
𝑝𝑜

2. Fermi Energy Level Position (Unit: eV)


a. N – type (Nd > Na)
𝑛𝑜 Note:
𝐸𝐹 − 𝐸𝐹𝑖 = 𝑘𝑇 ln( )
𝑛𝑖 • k = 8.617 × 10-5 eV / K
𝑁𝑐
𝐸𝑐 − 𝐸𝐹 = 𝑘𝑇 ln ( ) • kT ≈ 0.0259 eV (ONLY at 300K)
𝑛0
• >> : two or three orders of magnitude
if Nd >> Ni, 𝑛𝑜 ≈ 𝑁𝑑
• Compensated: doped with both donor and acceptor
𝑁𝑐
𝐸𝑐 − 𝐸𝐹 = 𝑘𝑇 ln( )
𝑁𝑑 Convention:
if compensated:
𝑁𝑐 • no : Electron Concentration
𝐸𝑐 − 𝐸𝐹 = 𝑘𝑇 ln( ) • po : Hole Concentration
𝑁𝑑 − 𝑁𝑎
b. P – type (Na > Nd) • ni : Intrinsic Concentration
𝑝𝑜 • Nc : Density of State @ Conduction Band
𝐸𝐹𝑖 − 𝐸𝐹 = 𝑘𝑇 ln( )
𝑛𝑖 • Nv : Density of State @ Valence Band
𝑁𝑣 • Nd : Doping Concentration
𝐸𝐹 − 𝐸𝑣 = 𝑘𝑇 ln( )
𝑝𝑜 • Na : Acceptor Concentration
if Na >> Ni, 𝑝𝑜 ≈ 𝑁𝑎 • Ec : Conduction Band Edge
𝑁𝑣
𝐸𝐹 − 𝐸𝑣 = 𝑘𝑇 ln( ) • Ev : Valence Band Edge
𝑁𝑎
• EF : Fermi Energy Level (New)
if compensated:
𝑁𝑣 • EFi : Fermi Energy Level (Intrinsic)
𝐸𝐹 − 𝐸𝑣 = 𝑘𝑇 ln( ) • EG : Energy Band Gap
𝑁𝑎 − 𝑁𝑑

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