Scribd
Upload
6 views

HW3

This document outlines Homework 3 for the Semiconductor Device Physics course (EEE 309) for Spring 2025, with a total of 100 points. It includes tasks related to PN junction diodes, requiring derivations of various parameters and measurements for a silicon diode under different doping concentrations and biases. The homework is published on April 21, 2025, with a submission deadline of April 26, 2025.

Uploaded by

MD. MUSTAQ MUJAHID
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
6 views

HW3

This document outlines Homework 3 for the Semiconductor Device Physics course (EEE 309) for Spring 2025, with a total of 100 points. It includes tasks related to PN junction diodes, requiring derivations of various parameters and measurements for a silicon diode under different doping concentrations and biases. The homework is published on April 21, 2025, with a submission deadline of April 26, 2025.

Uploaded by

MD. MUSTAQ MUJAHID
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 1

Section-2 EEE 309 Spring 2025

Semiconductor Device Physics


Homework 3
(Total Marks: 100 pts)

Publication Date: 21/04/2025 Submission Deadline: 26/04/2025

For Si: ni = 1.5×1010 cm-3 εr = 11.7 Dp = 12.4 cm2/s Dn = 35 cm2/s τp = τn = 500 ns

1. For a PN junction diode, derive an expression for the following parameters: [5×7 = 35 pts]
(a) Built-in Potential (Vbi)
(b) Internal Electric Field (E)
(c) Internal Electric Potential (Φ)
(d) Overall and Partial Depletion Layer Width (W, xp and xn)
(e) Junction Capacitance (Cʹ)

2. For a Silicon PN Junction Diode with Boron and Phosphorus doping of 2×1015 cm-3 and
8×1016 cm-3 at room temperature measure the following: [3×7+9 = 30 pts]

(a) Measure Built-in Potential, Overall Depletion Layer Width, Partial Depletion Layer
Width in both regions and Peak Electric Field for zero applied bias.

(b) Measure Overall Depletion Layer Width, Partial Depletion Layer Width in both regions,
Peak Electric Field and Junction Capacitance for an applied forward bias of 400 mV.

(c) Measure every parameter from part (b) for an applied reverse bias of the same voltage.

(d) Assume we want to double the Overall Depletion Layer Width at zero bias via changing
the donor concentration while keeping the acceptor the same. What would be the new
donor concentration? Measure every parameter from part (a) for the new dopant profile.

3. For the Silicon Diode from Problem 2(a) measure the following: [5×7 = 35 pts]
(a) Measure the thermal equilibrium minority carrier concentration in both regions.
(b) For the applied voltage of 2(b), measure the minority carrier concentrations at the edge
of the depletion regions in both regions under forward bias.
(c) For the applied voltage of 2(b), measure the minority carrier current density at the edge
of the depletion regions in both regions under forward bias.
(d) Measure the total current density for the mentioned applied voltage. What is the reverse
saturation current density for the diode?
(e) Measure the minority and majority current density at twice the length of partial
depletion layer thickness in both regions for the same applied voltage.

You might also like