Ambo University

Institute of Technology

School of Informatics and Electrical Engineering

Department of Electrical and Computer engineering

Model - Exam for All 5th year

Course Title: - Applied Electronics I Course Code: - ECEng 2111

Name_________________________ID____________________________

INSTRUCTIONS:
➢ Check whether your question sheet contain Ten- pages including the cover page
➢ Attempt all questions properly and write your answers on the given space.
➢ Write your name, ID. No on the cover page of the sheets.
➢ Please switch off your mobile phones.
➢ Using your own rough paper is not allowed; & cheating is strictly forbidden.

<<GOOD LUCK>>
May/2023

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 Choose the Correct answer from the following given alternative
1. When the temperature of a doped semiconductor is increased, its conductivity
(A) Decreases.
(B) Increases.
(C) Does not change.
(D) Increases or decreases depending on whether it is p- or n-type.
2. Which of the following doping will produce a p-type semiconductor:
(A) Germanium with phosphorus
(B) Silicon with Germanium
(C) Germanium with Antimony
(D) Silicon with Indium
3. In an intrinsic semiconductor, the Fermi-level is:
(A) closer to the valence band
(B) midway between conduction and valence band
(C) closer to the conduction band
(D) within the valence band
4. The diode in which impurities are heavily doped is:

(A) Varactor diode ( B) PIN diode

(C) Tunnel diode ( D) Zener diode

5. The depletion region in a Junction Diode contains:

(A) only charge carriers (of minority type and majority type)
(B) no charge at all
(C) vacuum, and no atoms at all
(D) only ions, that is immobile charges
6. A semiconductor has ………… temperature coefficient of resistance.
(A) Positive ( B) Zero
(C) Negative ( D) None of the above
7. The random motion of holes and free electrons due to thermal agitation is called ….
A) Diffusion (B)Pressure
(C) Ionization (D) None of the above

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8. In an N-type semiconductor, the position of Fermi-level:

(A) Near valance Band

(B) Near Conduction Band
(C) In valance Band
(D) In conduction Band
9. A diode conducts when it is forward-biased, and the anode is connected to the ________
through a limiting resistor.
( A ) positive supply ( B ) negative supply
( C ) cathode ( D ) anode
10. You have an application for a diode to be used in a tuning circuit. A type of diode to use
might be
(A) an LED. ( B ) a Schottky diode.

(C) a Gunn diode. ( D ) a varactor.

11. Refer to this figure. Which symbol is correct for an LED?

(A) a (B) b (C) c (D) d ( E) e

12. The process of emitting photons from a semiconductive material is called:

(A) photoluminescence.

(B) gallium arsenide.

(C) electroluminescence.

(D) gallium phosphide.

13. For the BJT to operate in the saturation region, the base-emitter junction must be ________-
biased and the base-collector junction must be ________-biased.

(A) forward, forward (B) forward, reverse

(C) reverse, reverse (D) reverse, forward

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14. A transistor in common emitter mode has:
(A) a high input resistance and low output resistance
(B) a medium input resistance and high output resistance
(C) a very low input resistance and a low output resistance
(D) a high input resistance and a high output resistance
15. In a clamping circuit, the peak-to peak voltage of the waveform being clamped is:
(A) affected by the clamping
(B) not affected by the clamping
(C) determined by the clamping voltage value
(D) determined by the ratio of rms voltage of the waveform and the clamping voltage

16. The forward characteristic of a diode has a slope of approximately 50mA/V at a desired
point. The approximate incremental resistance of the diode is:
(A) 50 Ω (B) 35Ω
(C) 20 Ω (D) 10 Ω
17. Identify the condition for a transistor to act as an amplifier.
(A) The emitter-base junction is forward biased and the base-collector junction is reverse
biased
(B) No bias voltage is required
(C) Both junctions are forward biased
(D) Both junctions are reverse biased
18. A collector characteristic curve is a graph showing ………..
(A) emitter current (IE) versus collector-emitter voltage (VCE) with (VBB) base bias
voltage held constant
(B) collector current (IC) versus collector-emitter voltage (VCE) with (VBB) base bias
voltage held constant
(C) collector current (IC) versus collector-emitter voltage (VC) with (VBB) base bias
voltage held constant
(D) collector current (IC) versus collector-emitter voltage (VCC) with (VBB) base bias
voltage held constant

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19. In a JFET, at pinch-off voltage applied on the gate:
(A) the drain current becomes almost zero
(B) the drain current begins to decrease
(C) the drain current is almost at saturation value.
(D) the drain-to-source voltage is close to zero volts.
20. For a typical bipolar junction transistor, the doping concentration and cross-sectional area of
the Emitter(E), Base(B), and Collector(C) region varies respectively as:
(A) E > C > B and E > C > B (B). E > C > B and C > E > B

(C) E > B > C and E > C > B D. C > E > B and C > E > B

21. The lowest output impedance is obtained in case of BJT amplifiers for
(A) CB configuration.
(B) CE configuration.
(C) CC configuration.
(D) CE with RE configuration.
22. As the temperature of a transistor goes up, the base-emitter resistance ……………
(A)Decreases (B) Increases
(C) Remains the same (D) None of the above
23. Which of the following is not a FET amplifier Configuration:
(A) Common base amplifier (B) Common drain amplifier
(C) Common source amplifier (D) Common gate amplifier
24. The current amplification factor in CE configuration is
(A) α (B) β + 1 (C) 1/ β (D) β
25. With the positive probe on an NPN base, an ohmmeter reading between the other transistor
terminals should be ……
(A)open (B) infinite
(C) low resistance (D) high resistance
26. The gate voltage in a JFET at which drain current becomes zero is called ________ voltage
(A) Saturation (B) Pinch-off
(C) Active (D) Cut-off

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27. A MOSFET differs from a JFET mainly because:
(A). Of the power rating
(B) the MOSFET has two gates
(C) the JFET has a PN junction
(D) MOSFETs do not have a physical channel
28. The constant-current region of a JFET lies between:
(A) Cut off and saturation (B) Cut off and pinch-off
(C) Zero and IDSS (D) Pinch-off and breakdown
29. An n-channel D-MOSFET with a positive VGS is operating in:.
(A) the depletion mode
(B) the enhancement mode
(C) cutoff
(D) saturation
30. Drain current in the constant-current region increases when
(A) the gate-to-source bias voltage decreases
(B) the gate-to-source bias voltage increases
(C) the drain-to-source voltage increases
(D) the drain-to-source voltage decreases
31. In the voltage range, Vp < VDS < BVDSS of an ideal JFET or MOSFET
(A) The drain current varies linearly with VDS.
(B) The drain current is constant.
(C) The drain current varies nonlinearly with VDS.
(D) The drain current is cut off.
32. The total gain of a multistage amplifier is less than the product of the gains of individual
stages due to________
(A)Power loss in the coupling device (B)Loading effect of the next stage
(C)The use of many transistors (D)The use of many capacitors
33. Enhancement mode device acts as ____ switch, depletion mode acts as _____ switch.
(A) open, closed (B) closed, open
(C) open, open (D) close, close

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34. Depletion mode MOSFETs are more commonly used as ____________
(A) Switches (B) Resistors
(C) Buffers (D) Capacitors
35. Enhancement mode MOSFETs are more commonly used as ____________
(A) Switches (B) Resistors
(C) Buffers (D) capacitors
36. What configuration is widely preferred in cascading amplifiers?
(A) Common Emitter (B) Common Base
(C) Common Collector (D) Common Source
34. Compared to bipolar transistor, a JFET has:
(A) lower input impedance
(B) higher voltage gain
(C) higher input impedance and high voltage gain
(D) higher input impedance and low voltage gain
37. What happens to bandwidth if the total gain increased in cascade amplifiers?
(A) Increases (B) Decreases
(C)Constant (D) Remain Same
38. The principal advantage(s) of MOSFETs over BJTs is (are)
(A) Their biasing networks are simpler
(B) Their drive requirements are simpler.
(C) They can be connected in parallel for added drive capability.
(D) All of the above
39. If Av, Ai and Ap represents the voltage gain, current gain and power gain ratio of an amplifier
which of the below is not the correct expression for the corresponding values in decibel?
(A) Current gain: 20 log Ai db
B) Voltage gain: 20 log Av db
(C) Power gain: 20 log Ap db
(D) Power gain: 10 log Ap
40. An amplifier has a voltage gain of 100 V/V and a current gain of 1000A/A. the value of the
power gain decibel (db) is:
(A) 30 db (B) 40 db (C) 50 db D) 60 db

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41. What is meant by stability of an amplified signal?
(A) The amplified signal must have a finite amplitude
(B) The amplified signal should not have self-oscillation
C) The input and the output signal must be proportional
(D) The ratio of the input and the output signal must be finite
42. Which type of power amplifier is biased for operation at less than 180º of the cycle?
(A) Class A ( B) Class B and AB
(C) Class C ( D) Class D
43. Class ________ amplifiers are normally operated in a push-pull configuration in order to
produce an output that is a replica of the input.
(A) A (B) B (C) C (D) AB
44. Which of the following devices has the highest input resistance?
(A) diode (B) JFET
(C) MOSFET (D) bipolar junction transistor
45. In an RC coupled amplifier, the voltage gain over mid-frequency rang…….
(A) Changes abruptly with frequency
(B) Is constant
(C) Changes uniformly with frequency
(D) None of the above
46. In obtaining the frequency response curve of an amplifier, the …………
(A) Amplifier level output is kept constant
(B) Amplifier frequency is held constant
(C) Generator frequency is held constant
(D) Generator output level is held constant
47. The main characteristics of a Darlington Amplifier are
(A) High input impedance, high output impedance and high current gain.
(B) Low input impedance, low output impedance and low voltage gain.
(C) High input impedance, low output impedance and high current gain.
(D) Low input impedance, low output impedance and high current gain.

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48. The upper cutoff frequency of an RC coupled amplifier mainly depends upon:
(A) Coupling capacitor
(B) Emitter bypass capacitor
(C) Output capacitance of signal source
(D) Inter-electrode capacitance and stray shunt capacitance
49. Removing bypass capacitor across the emitter-leg resistor in a CE amplifier causes
(A) increase in current gain. (B) decrease in current gain.
(C) increase in voltage gain. (D)decrease in voltage gain.
50. For a large value of |VDS|, a FET – behaves as:
(A) Voltage controlled resistor.
(B) Current controlled current source.
(C) Voltage controlled current source.
(D) Current controlled resistor.

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 Answer sheet
1. 11. 21. 31. 41.

2. 12. 22. 32. 42.

3. 13. 23. 33. 43.

4. 14. 24. 34. 44.

5. 15. 25. 35. 45.

6. 16. 26. 36. 46.

7. 17. 27. 37. 47.

8. 18. 28. 38 48.

9. 19. 29. 39. 49.

10. 20. 30. 40. 50.

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