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2SC2240

The 2SC2240 is an NPN silicon epitaxial planar transistor designed for low noise audio amplifier applications, available in two groups based on DC current gain. It features a TO-92 plastic package with maximum ratings including a collector-emitter voltage of 120V and power dissipation of 625mW. Key characteristics include a DC current gain range of 200-700 and a transition frequency of 100MHz.

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Ulises Monteverde
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12 views2 pages

2SC2240

The 2SC2240 is an NPN silicon epitaxial planar transistor designed for low noise audio amplifier applications, available in two groups based on DC current gain. It features a TO-92 plastic package with maximum ratings including a collector-emitter voltage of 120V and power dissipation of 625mW. Key characteristics include a DC current gain range of 200-700 and a transition frequency of 100MHz.

Uploaded by

Ulises Monteverde
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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2SC2240

NPN Silicon Epitaxial Planar Transistor


for low noise audio amplifier applications.

The transistor is subdivided into two groups,


G and L according to its DC current gain

On special request, these transistors can be


manufactured in different pin configurations.
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package

Absolute Maximum Ratings (Ta = 25 OC)


Parameter Symbol Value Unit
Collector Base Voltage VCBO 120 V
Collector Emitter Voltage VCEO 120 V
Emitter Base Voltage VEBO 5 V
Collector Current IC 100 mA
Base Current IB 20 mA
Power Dissipation Ptot 625 mW
Junction Temperature Tj 150 O
C
Storage Temperature Range Tstg - 55 to + 150 O
C

Characteristics at Ta = 25 OC
Parameter Symbol Min. Typ. Max. Unit
DC Current Gain
at VCE = 6 V, IC = 2 mA Current Gain Group G hFE 200 - 400 -
L hFE 350 - 700 -
Collector Base Cutoff Current
ICBO - - 100 nA
at VCB = 120 V
Emitter Base Cutoff Current
IEBO - - 100 nA
at VEB = 5 V
Collector Emitter Breakdown Voltage
V(BR)CEO 120 - - V
at IC = 1 mA
Collector Emitter Saturation Voltage
VCE(sat) - - 0.3 V
at IC = 10 mA, IB = 1 mA
Transition Frequency
fT - 100 - MHz
at VCE = 6 V, IC = 1 mA
Output Capacitance
Cob - - 6 pF
at VCB = 10 V, f = 1 MHz

SEMTECH ELECTRONICS LTD.


® Dated：08/01/2016 Rev：02
2SC2240

SEMTECH ELECTRONICS LTD.


® Dated：08/01/2016 Rev：02

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