FINFET TECHNOLOGY

1.Introduction.

VLSI, which stands for Very Large Scale Integration, is a process used in the design and
fabrication of integrated circuits (ICs), which are electronic circuits that are made up of a
large number of transistors and other components that are integrated into a single chip. the
technology allows for the creation of highly complex and compact ICs that can be used in a
wide range of applications, from consumer electronics and computers to communication
systems and medical devices.

One of the key advantages of this technology is its ability to pack a large number of transistors and
other components onto a single chip, which allows for the creation of highly complex and powerful
ICs. This makes it possible to create ICs that can perform a wide range of functions, from simple
logical operations to complex algorithmms. It also allows for the creation of ICs with high levels of
performance, power efficiency, and reliability, which are essential for many applications

The number of uses for integrated circuits (ICs) in high performance computing,
telecommunications, image and video processing, and consumer electronics has been
growing quickly since the introduction of very large scale integration (VLSI) designs.
Silicon CMOS technology has emerged as the fabrication process within the last few years.
The quick increase in transistors integrated into a single chip’s circuit illustrates the
revolutionary significance of these developments.

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Key Aspects of VLSI Technologies:

1.Fabrication Processes:
1. CMOS Technology: Complementary Metal-Oxide-Semiconductor (CMOS) is the most widely
used technology for manufacturing VLSI chips due to its low power consumption and high noise
immunity.

2. SOI Technology: Silicon-On-Insulator (SOI) technology improves performance by reducing

parasitic capacitance in the circuit.

3. FinFET and GAAFET: These are advanced transistor architectures that improve performance
and power efficiency.

2.Design Techniques:
1. RTL Design: Register-Transfer Level (RTL) design is a high-level abstraction used to describe the
behavior of digital circuits.

2. Synthesis: The process of converting RTL design into a gate-level netlist.

3. Floorplanning: The arrangement of different functional blocks on the chip.
4. Place and Route: Positioning and connecting various components and wires on the chip.

3.EDA Tools: 1. CAD Tools: Computer-Aided Design (CAD) tools are essential for designing,
simulating, and verifying VLSI circuits.

2. Verification Tools: Tools like simulation, formal verification, and timing analysis ensure the
correctness and performance of the design.

3. DFT: Design for Testability (DFT) techniques ensure that the manufactured chips can be tested

4.Packaging and Testing.

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2.Case Background

The journey towards FinFETs began in the late 1990s when engineers and researchers at the
University of California, Berkeley, proposed a radical new transistor structure. Their idea was
to replace the planar transistor design with a three-dimensional architecture to overcome the
limitations of traditional planar MOSFETs, which led to the birth of FinFETs.

The development of FinFET technology marks a significant milestone in the field of

semiconductor manufacturing. The term “FinFET” stands for Fin Field-Effect Transistor and
refers to a three-dimensional transistor design that provides enhanced performance and power
efficiency compared to traditional planar transistors. The history of FinFET technology can
be traced back to the late 1990s when researchers at the University of California, Berkeley,
proposed the concept of a vertical, multi-gate transistor structure. This breakthrough idea
addressed the limitations of planar transistors in scaling down their size while maintaining
good control over the flow of current. The researchers recognized that by using a fin-like
structure as the channel region, they could achieve better electrostatic control, reduce leakage
current, and improve overall transistor performance. In the early 2000s, major semiconductor
manufacturers, such as Intel, IBM, and TSMC, embarked on intensive research and
development efforts to refine and commercialize FinFET technology.

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3.Literature Review

FinFET technology was introduced by researchers at the University of California, Berkeley,

led by Dr. Chenming Hu. The concept was first detailed in a paper presented at the
International Electron Devices Meeting (IEDM) in 1999. The team included notable
contributors such as Hisamoto, Lee, Kedzierski, Takeuchi, Asano, Kuo, Anderson, Tsu-Jae
King Liu, and Jeffrey Bokor.

The seminal paper titled "FinFET—A Self-Aligned Double-Gate MOSFET Scalable to 20

nm" described the FinFET as a promising solution for scaling CMOS technology beyond the
limits of traditional planar MOSFETs. This innovative approach addressed significant issues
related to short-channel effects and power consumption in deeply scaled devices.

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FINFET technology is a type of transistor design that has become increasingly popular in
recent years due to its superior performance compared to traditional planar transistors. The
term FINFET stands for Fin- Field_ Effect Transistor, and it refers to the unique fin-like
structure that is used to control the flow of current through the transistor.

The key advantage of FINFET Technology is that it allows for better control over the
transistor’s behavior , resulting in faster switching speeds, lower power consumption, and
improved overall performance. This makes it an ideal choice for use in high-performance
computing applications such as processors and memory chips.

Fig 3.a:MOSFET Fig 3.b:FinFET

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. FinFET and Its Core Technology "

"Finned field effect transistor" (abbreviated as "FinFET") is a transistor technology utilized in

the production of semiconductors. Due to the three-dimensional, fin-like structure of
FinFETs, the channel may be controlled more effectively, enhancing both performance and
energy efficiency. A multigate device, a MOSFET constructed on a substrate with the gate
positioned on two, three, or four sides of the channel or wrapped around the channel, is a fin
field-effect transistor [1]. FinFETs with thick oxide on top of the fin are known as double-
gate FinFETs [2].

The excess silicon can be accounted for in the design by using hyperbolic silicon layers,
which significantly lowers the electric field from the gate to the fin [3]. FinFETs having thin
oxide coatings on the sides and top of the fin are known as tri-gate FinFETs. To boost
packing density, transistors can be placed closer together, and the height of the fins can be
raised to improve energy efficiency [4]. In conclusion, FinFETs represent a substantial
development in transistor technology, delivering greater performance characteristics,
improved control, and lower leakage, especially in advanced semiconductor processes

Fig 3.c:Basic structure of FINFET

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4.Methodology

The FinFET design is distinct from that of a planar transistor. Its key feature is the ‘fin’, a
thin silicon structure that rises above the substrate, on which the gate material is deposited.
Unlike in traditional planar designs, the gate material surrounds the fin on three sides, hence
often referred to as a ‘trigate’ design. This design allows for better control over the current
flow through the channel, enhancing performance and reducing leakage.

Fig 4.1:Bulk FINFET.

1. Source and Drain: These two terminals are located at either end of the fin.
They act as the entry and exit points for the electrons during operation.
2. The Fin: This is the thin vertical silicon structure that rises above the
substrate. The fin determines the thickness of the channel through which the
electrons flow.
3. The Gate: This is the terminal that controls the flow of current through the
channel. In a FinFET, the gate is wrapped around three sides of the fin, giving
it greater control over the current flow.

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4.In operation, applying a voltage to the gate creates an electric field that modulates
the conductivity of the channel. This in turn allows the FinFET to function as a switch,
controlling the flow of electrons from the source to the drain.

Three-Dimensional Structure:

A FinFET, or fin field-effect transistor, is a form of transistor that uses a three-dimensional

fin-like structure, which is composed of a thin silicon fin that is vertically positioned on the
substrate. The performance of transistors is improved and the channel is better controlled by
this configuration. Gate All Around (GAA): FinFETs contain a gate that encloses the fin on
three sides (gate-all-around), enabling enhanced electrostatic control over the channel [5].

The standard planar MOSFET has the gate on the top surface, in contrast to this gate-all-
around design. Control of Gate Voltage: By supplying a gate voltage, the electrostatic field
regulates the flow of current through the fin between the source and drain terminals, turning
on or off the transistor. The channel can be controlled more effectively due to the three-
dimensional structure, which also lowers leakage current in the off state [6]. Better
Electrostatic Control:

The front and rear gates of the multigate architecture provide better electrostatic control over
the channel, overcoming issues brought on by shorter channel lengths. This function is
essential for controlling power usage and enhancing efficiency. Short-Channel Effects
Mitigation: As transistors are shrunk to lower dimensions, short-channel effects are a major
worry that the three-dimensional design helps address.

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Fig 4.2 schematic representation of FINFET.

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FinFETs are renowned for their increased energy efficiency, which is one of their main
advantages. Less power is consumed as a result of decreased leakage current and improved
electrostatic control. This energy efficiency is especially important in contemporary
semiconductor technologies, where reducing power consumption is an important design
factor. Adapting to Smaller Nodes: FinFET technology allows semiconductor devices to be
scaled down to smaller technology nodes (like 10nm, 7nm, etc.). The three-dimensional fin
structure improves performance and scalability at advanced nodes by overcoming issues
caused by the downsizing of conventional planar transistors

Reduced Leakage Current: One of the primary advantages of FinFETs is their ability to
significantly reduce power leakage. The vertical fin structure allows better control of the
channel, resulting in reduced leakage current when the transistor is in the off-state. This
improved control minimizes energy wastage and enhances power efficiency.

Fig 4.3 Power Trends of Integrated Circuits.

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Enhanced Performance: FinFETs offer remarkable performance improvements compared to

their predecessors. The three-dimensional structure allows for increased transistor density,
enabling more transistors to be packed into a given area. This results in higher processing
power and faster switching speeds, leading to improved overall device performance.

Scaling Possibilities: As electronic devices continue to shrink in size, the scalability of

transistors becomes crucial. FinFETs have exhibited excellent scaling capabilities, allowing
the semiconductor industry to continue its relentless pursuit of miniaturization. The design’s
robustness in handling reduced transistor dimensions has been instrumental in maintaining
the pace of Moore’s Law.

Lower Power Consumption: FinFETs operate at lower voltages than traditional transistors,
leading to reduced power consumption. The improved control over the channel allows for
better power management, resulting in longer battery life for portable devices and reduced
energy requirements for larger systems.

Better Channel Control: FinFETs allow better control over the channel region, mitigating
the short channel effects that plagued MOSFETs. The three-dimensional fin structure and the
ability to modulate the width of the fin provides enhanced electrostatic control and reduced
undesirable effects, enabling efficient scaling and improved performance. By adjusting the
fin width, the threshold voltage and performance of the transistor can be fine-tuned enabling
optimization for specific performance requirements.

Fig 4.4 Reprentations of planar FD_SOI and FINFET

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5.Analysis

The following figure shows some of the critical dimensions of the FinFET that impact
performance:

1. Gate Length (Lg): The gate length represents the length of the gate electrode that
controls the channel region of the FinFETs. Smaller gate lengths lead to reduced
propagation delays and improved performance.
2. Fin Thickness (T): This represents the lateral dimension of the fins. Though thicker
fins provide better control over the channel and reduce short channel effects, but at
the same time thicker fins also introduce challenges in terms of process complexity
and increased parasitic capacitance.
3. Fin Height (Hfin): The fin height represents the vertical dimension of the fin
structure in a FinFET. Increasing the fin height allows for better electrostatic control
of the channel, which can enhance transistor performance.

Fig 5.1:Critical Dimensions Of FINFET

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Real-World Impact

The advent of FinFETs has had a profound impact on a wide range of electronic devices.
From smartphones and tablets to high-performance computing systems and IoT devices,
FinFETs have become the go-to transistor technology for delivering power-efficient, high-
performance solutions.

The semiconductor industry’s reliance on FinFETs has been instrumental in enabling

technological advancements, such as artificial intelligence, machine learning, 5G
communications, and autonomous vehicles. These transformative applications demand
efficient processing capabilities, and FinFETs have provided the necessary foundation for
such

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6.Solutions and Recommendations

Beyond FinFETs, there have been significant advancements in semiconductor technology

that are shaping the future of electronic devices. Some of the notable technologies include:

Nanosheet FET (NS-FET): Nanosheet FET is an evolution of FinFET technology and is

designed to further enhance transistor performance. Instead of a fin structure, it uses multiple
ultra-thin silicon layers stacked on top of each other, forming a nanosheet. This architecture
provides better electrostatic control and reduces current leakage, resulting in improved power
efficiency and performance.

Gate-All-Around FET (GAA-FET): GAA-FET, also known as nanowire FET or

nanoribbon FET, is an emerging transistor architecture that offers superior control over the
channel region compared to FinFETs. In this design, the channel is surrounded by a gate on
all sides, enabling better electrostatic control and reducing short channel effects. GAA-FETs
offer excellent scalability, higher performance, and improved power efficiency.

Tunneling FET (TFET): TFET is a novel transistor architecture that leverages quantum
mechanical tunneling phenomena. It replaces the traditional MOSFET (Metal-Oxide-
Semiconductor Field-Effect Transistor) junction with a tunneling junction, which enables
better control of the transistor’s behaviour. TFETs have the potential to operate at lower
voltages, reducing power consumption, and can be used for low-power applications, such as
mobile devices and Internet of Things (IoT) devices.

Carbon Nanotube FET (CNFET): Carbon nanotubes (CNTs) are cylindrical structures
made of carbon atoms and possess excellent electrical properties. CNFETs utilize carbon
nanotubes as the channel material, offering high carrier mobility and improved current
density compared to traditional silicon-based transistors. CNFETs have the potential for high-
performance applications and can operate at lower power levels.

Spintronic Devices: Spintronics, or spin electronics, is an emerging field that exploits the
intrinsic spin of electrons in addition to their charge. Spintronic devices, such as spin field-

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effect transistors (SpinFETs) and magnetic tunnel junctions (MTJs), enable the manipulation
of electron spins for data storage and processing. These devices have the potential to
revolutionize memory technologies, leading to faster and more energy-efficient data storage
and computing systems.

Neuromorphic Computing: Neuromorphic computing aims to develop hardware systems

that mimic the structure and functionality of the human brain. It involves designing
specialized circuits and architectures that can perform tasks such as pattern recognition,
machine learning, and cognitive computing with exceptional efficiency.

These technologies represent the forefront of semiconductor advancements beyond FinFETs.

While some are still in the research or early development stages, they hold the potential to
drive significant improvements in performance, power efficiency, and functionality in future
electronic devices.

Fig 6.1 FINFET Process Flow

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Challenges.

FinFET technology, while transformative in the realm of semiconductors, grapples with a

set of inherent challenges. One salient concern arises from the short channel length,
which potentially compromises the device's performance due to quick channel effects.
Additionally, when delving into III-V semiconductors such as In-GaAs, the smaller band
gaps compared to silicon lead to elevated band-toband tunneling currents.

Another point of contention is the High Electron Mobility Transistor (HEMT) devices.
Their performance can be negatively impacted by the gate leakage current and support
current problems they face. As FinFETs venture into smaller nodes, the looming shadows
of reliability issues, including negative-bias temperature instability (NBTI) and hot carrier
injection (HCI), can jeopardize the longterm stability of these devices. This is reminiscent
of the challenges standard bulk MOSFETs face, particularly with concerns like
concentration punch-through that diminish current quality and drive capability. Moreover,
the intricate process of crafting FinFETs, especially those with double gates, is a step
above the manufacturing complexity of traditional transistors. While their superiority in
performance, control, and reduced leakage is undeniable, consistency in fin height and
precise control during production becomes paramount. The ever-present specter of
process unpredictability is exacerbated when crafting smaller nodes, making uniformity a
Herculean task given the sensitivities to variations in size, composition, and doping
levels.

FinFETs' three-dimensional architecture presents unique thermal challenges. As they

shrink in size and power densities soar, managing heat dissipation is paramount.
Financially, the advanced design, materials, and intricate manufacturing process elevate
their production costs. Thus, the industry faces a delicate dance between enhancing
performance and maintaining cost-effectiveness. The onus is on the semiconductor realm
to foster continuous research, innovation, and partnership, ensuring FinFET technology's
unwavering advancement.

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7.Implementation Plan

Several innovative strategies have been proposed to address the challenges associated
with FinFET technology. One significant approach involves the design of multiple gate
transistors. The introduction of FinFETs mitigates short channel effects and offers
enhanced control over device performance. Furthermore, the utilization of high-k
dielectrics becomes indispensable for boosting performance in nanoscale dimensions by
reducing undesired current flow.

Fig 7.1:improvement characteristics in FiNFET

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An interesting proposal is the incorporation of a dual-KK structure in FinFETs. This design

targets uneven drain extensions, aiming to elevate efficiency and refine metrics such as
transconductance, output conductance, and cutoff frequency. Emphasizing material
optimization, there's a push towards refining the In-GaAs-on-Insulator material, especially
for gates with increased length and width. This requires meticulous planning around source
and drain spacings.

Hafnium oxide, when combined with a gold gate metal, stands out for its potential to raise
the ION/IOFF ratio while curbing leakage current. Another noteworthy strategy is the use of
selective epitaxial Si growth, aimed at enhancing FinFET performance by mending the fin's
exterior surface..

Thermal challenges inherent to FinFETs demand innovative thermal management solutions.

This might necessitate the exploration of novel materials or advanced cooling techniques.
With the reliability of FinFETs in focus, addressing issues like hot carrier injection and
negative-bias temperature instability becomes paramount. Delving into cutting-edge
transistor materials and designs can be a potential solution. Economic considerations also
come into play, emphasizing the need for cost-efficiency in production processes. Striking a
balance between cost and performance improvements is crucial. Lastly, achieving precise
and consistent doping in the fin warrants the development of enhanced doping methods,
ensuring uniform transistor properties. Overall, these enhancements aim to revolutionize
FinFET technology, promising superior performance, reduced leakage, and heightened
efficiency. However, it's essential to remember that specific metrics might vary based on the
application and context of FinFET devices.

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8.Conclusion

The paper delves into the advent of FinFETs as a promising solution in the realm of
semiconductor technology. It elucidates the operating mechanisms and the foundational
aspects of FinFET technology, highlighting its unique three-dimensional multi-gate
architecture. This design not only bolsters performance and control but also significantly
curtails leakage issues. The three-dimensional configuration, coupled with a full-gate
design, renders the FinFET highly energy-efficient. Furthermore, its adaptability to
smaller nodes, minimized leakage, and suitability for logic circuits set it apart in its
functional domain. Nevertheless, the trajectory of FinFET innovation isn't devoid of
challenges. Beyond the quick channeling effects, material limitations, reliability concerns,
and manufacturing intricacies mentioned, there lie additional hurdles. These encompass
thermal constraints, process variability, and financial considerations. The road ahead for
researchers and industry experts involves untangling these complications. Potential
avenues for progress include the development of advanced multi-gate transistors,
harnessing high-k dielectrics, refining material choices, and devising effective thermal
management strategies. In essence, this article sheds light on the evolution, challenges,
and prospective advancements of FinFET technology within the semiconductor sector. It
underscores the imperative of continuous research, collaboration, and ingenuity to
navigate challenges and augment FinFET's capabilities, ultimately aiming to enhance
efficiency and performance.

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9.References

[1] Zheng, P., Connelly, D., Ding, F., & Liu, T. J. K. (2015). FinFET evolution toward
stackednanowire FET for CMOS technology scaling. IEEE Transactions on Electron
Devices, 62(12), 3945-3950.

[2] Zhang, S. (2020, August). Review of modern field effect transistor technologies for
scaling. In Journal of Physics: Conference Series (Vol. 1617, No. 1, p. 012054). IOP
Publishing.

[3] Bhole, M., Kurude, A., & Pawar, S. (2013). Finfet- benefits, drawbacks and challenges.
International Journal of Engineering Sciences & Research Technology, 1(11).
[4] Maurya, R.K., Bhowmick, B. Review of FinFET Devices and Perspective on Circuit
Design Challenges. Silicon 14, 5783–5791 (2022). https://doi.org/10.1007/s12633-021-
01366-z.

[5] Zhu, X., Zhao, Z., Wei, X., & others. (2021). Action recognition method based on wavelet
transform and neural network in wireless network. In 2021 5th International Conference on
Digital Signal Processing (pp. 60-65).

[6] Zhang, Y., Zubair, A., Liu, Z., Xiao, M., Perozek, J., Ma, Y., & Palacios, T. (2021). GaN
FinFETs and trigate devices for power and RF applications: Review and perspective.
Semiconductor Science and Technology, 36(5), 054001.

[7] Chang, T. Y. J., Chen, Y. H., Chan, W. M., Cheng, H., Wang, P. S., Lin, Y., ... & Li, Q.
(2020). A 5-nm 135-mb SRAM in EUV and high-mobility channel FinFET technology with
metal coupling and charge-sharing write-assist circuitry schemes for high-density and low-V
MIN applications. IEEE Journal of Solid-State Circuits, 56(1), 179-187.

[8] Patnala, M., Yadav, A., Williams, J., Gopinath, A., Nutter, B., Ytterdal, T., & Rizkalla,
M. (2020). Low power-high speed performance of 8T static RAM cell within GaN TFET,
FinFET, and GNRFET technologies–A review. Solid-State Electronics, 163, 107665.

[9] Nsengiyumva, P., Ball, D. R., Kauppila, J. S., Tam, N., McCurdy, M., Holman, W. T., ...
& Massengill, L. W. (2016). A comparison of the SEU response of planar and FinFET D
flipflops at advanced technology nodes. IEEE Transactions on nuclear science, 63(1), 266-
272.

[10] Singh, J., Ciavatti, J., Sundaram, K., Wong, J. S., Bandyopadhyay, A., Zhang, X., ... &
Samavedam, S. B. (2017). 14-nm FinFET technology for analog and RF applications. IEEE
Transactions on electron devices, 65(1), 31-37.

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