Microwave Tube

linear beam tube Cross field tube

H it
E and E and
end
unen
freed
g

Two scematizdiagram
cavity klystron
catcher
input Bunther RFoutput
RF cavity cavity

I
cathode Driftspace
abode

β A
vo
Beldam
collector

Ltd L 2d
Distance stale
111 to Es Time scale to ts
No
 Can amplify RF signal

Both cavities are turned

for same Resonance

frequency synchronous Tuning

Vang V β sin w1

things
velocity
To F evo I mV

Q The parameters of a 2 cavity klystron are

No 1000 V I 25mA beam current

d 1 mm
f 3 Glt

Find out β Beam coupling coefficient

7018
No 0.593 10 No m 9.11
kg

0 593 1067 Too

1.88 107 m s to
 g wt 2T
W w

0g 2T.gs Y
xo 1.002rad

β sina.gs sig
5 0.958

10 2015
02

TWT Travelling Wave Tube

RFoutput
input maget
WRF
beam
electron

cathode
i
t.ie ywwit
Anode
stage
Focusing.se

O type tube linear beam

type take

Vout e Nc
Viz
7 3
where c Gain parameter
1
Power 10 47
 8 9 vin

where N 2
and
No of turns

and Be
WE

Phase constant

Problem

The beam
parameters
of a TWT are voltage

Vo 2.5kV beam current Io 25 mA characteristic

impedance 20 102 and operating frequency f 9.561k

Circuit length N 40 Calculate

C
Ap and Pe

3
25 10 10
 2.5 103

0
04641

Ap 10
log

Vout
Yin et Ne

misity
 Ap 1010g
Y
Yf

1.06dB

Ap 9 59 47.3 40 0 0464

I
Magnetron

FIT

as I

Anode

Cathode

Force to direction
due magnetic field in

Ff Be Up
 Parodius
Torque in direction

Tp P Fp P Be Up

Torque rate of change of angular motion

angular velocity moment of inertia

mp

P BeUp
1 mp

d
PBeup dt of xmp

up
If

P Be do xmp f c
 dt

Be d xmp t C

Boundary rondition ian be applied

P a
d 0

Be B Catoff
C
at magnetic
field

e
EI
a
def mp

MV v electron
evo
Again velocity
redialvalactyt
m Up
Up
angular
velocity
evo m
 2 at
at

Again we can use condition at Anode

boundary

P b 0

ev mb d VosCatoff
I Voltage

Voc

cap
2
9 92
mb.EE
P b

v b.EE i
12
 IT
Bc

In a
magnetron a 3 am b 8 am

what
if hall cut of voltage in 120 then

will be the hall int off field

3
9.1 10
m
kg
e 1.6 10 C
v b
Eˢ 1

12 8 16 10 13 1 32
 2
4 9 10 82

31
B 12 2 4 9 10
19 0 73
8 1.6 10

31 11
B 864 10 1.15 10
19
74.75 10

0
B 3.39 10 T
Diode Deferfer

AM modulated signed EN.NET

Envelope defection can be done diode defector
using

Modulated Diode EnvelBdeterton

Detector
Signal

Rs
p p
M

Vo
N C Re
Vs

Working

Internet

To overcome drawbacks
 1
A B
X1

vs V 1 2 Vo

RL

Precison Peak defect

at

Vg Vc VA VD Vs
VA Vs
D in FB

vcc
vs
vs Lvc
v

ve
vsue v Vec
Vsavc v Vee

Vs A 5 cos 200 It

Vic 8 5V

load resister 5V
Calculate Vo across
 The extreme voltage of output VA

U VotVC
0.77 5 5.7 V

ve 8.5
voltage VA

Thermal detection

Seebeck effect

Temp Voltage
Hoint int mV ur

Peltier effect

ACL potpoint
IT TT

Thomsos effect
 A B
Ta TB
Ineat

Thermocouple

Junction 2
Metal I

Leadwire

v
1
Jan oo
Metal 2

leadwire
Hotgunction

Adv Temperature sensor

Withstand
high Temp
More durable

Less expensive

metal

K S
i T B
E

K 330 2460 F
 g

RTD Resistance
Temperature Defector

Temp sensor associated

with resistance

11

MetalBar

44 Heat
Temp due to vibrations in metal

resistance increases

Wheaton Bridge
TNull type Bridge

Deflection Bridge
 Oscillators

Tunnel Diode Oscillator

Gunn

PN run diode
Tunnel Diode
concentration in
pyw.tt band
Energy

CP doping
iii it
iii iii
It as
Deputy
Emt
pie _state EE viii msn.ua mngame
ECH

ENN
Depletion
layer
A
100

Electron from filled state can tunnel to the

empty state As we increase voltage

Eap 0
e v
EVP EEN
 1emptystate tilled state
ECN lurrent T
EFP
EVN
b
increase
Voltage
1
ESP 0
e v
P
Emptystate Filled state I
EFP ECN
current
EVN
1
Voltage increase

ESP v
EEN felvo
Evp
Emptystate Filled state
ECN
EFP current
EVN
Tunnelingstops at
d a point

Voltage increase
ESP ve
v
EEN
EVP Current
Emptystate Filled state
ECN Electron jump from
EFP conduct
valance band
Evn in PNjunct
e bandlike
 T

f V2 V3

Highly doped junction

Depletion layer width is small in layer

very
of 100 A

Tunneling mechanisms occurs as

Tunnel diode oscillator

soon
32
positis
Er i
ID C2
R

Filter Tanker Tuning

Equivalent clet of T D

M
Rs

F ER

n
Impedance 2 Zr j Zi

ar ale
IIII
I

2 Rst 5025
p.IT
Rawls
t.FI f
 Rs jwls
Ig 122
Rs i
Eff
wis
2
Ea

we
Tunnel diode amplifier with circulator

Termination
Ww

signalipp
r

L
Re signed off

Lb
soon

ER I
TD
For amplification
an negativefeedback isneeded
For oscillation andnegativeresu
positivefeedback

is nstnm

Rn 1

Application
Advantage
Disadvantage
 diode
Gunn diode
IMPATT
3rd

Radow
RRAARAR in
pulse
of
a
overview