FDMS8888 N-Channel PowerTrench MOSFET

July 2011

FDMS8888 NNNN
®
N-Channel PowerTrench MOSFET
30 V, 21 A, 9.5 m:
Features General Description
„ Max rDS(on) = 9.5 m: at VGS = 10 V, ID = 13.5 A The FDMS8888 has been designed to minimize losses in power
„ Max rDS(on) = 14.5 m: at VGS = 4.5 V, ID = 10.9 A conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
„ Advanced Package and Silicon combination rDS(on) while maintaining excellent switching performance.
for low rDS(on) and high efficiency

„ MSL1 robust package design Applications

®
„ RoHS Compliant
„ Synchronous Buck for Notebook Vcore and Server
„ Notebook Battery Pack
„ Load Switch

Top Bottom
Pin 1 D 5 4 G
S
S
S D 6 3 S
G
D 7 2 S

D 8 1 S
D D
D
D

Power 56

MOSFET Maximum Ratings TA = 25 °C unless otherwise noted

Symbol Parameter Ratings Units
VDS Drain to Source Voltage 30 V
VGS Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 21
-Continuous (Silicon limited) TC = 25 °C 51
ID A
-Continuous TA = 25 °C (Note 1a) 13.5
-Pulsed 80
EAS Single Pulse Avalanche Energy (Note 3) 54 mJ
Power Dissipation TC = 25 °C 42
PD W
Power Dissipation TA = 25 °C (Note 1a) 2.5
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics
RTJC Thermal Resistance, Junction to Case 3.3
°C/W
RTJA Thermal Resistance, Junction to Ambient (Note 1a) 50

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity
8888 FDMS8888 Power 56 13 ’’ 12 mm 3000 units

©2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDMS8888 Rev.C
 FDMS8888 N-Channel PowerTrench MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 30 V
'BVDSS Breakdown Voltage Temperature
ID = 250 PA, referenced to 25 °C 19 mV/°C
'TJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 PA
IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA

On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA 1.2 1.9 2.5 V
'VGS(th) Gate to Source Threshold Voltage
ID = 250 PA, referenced to 25 °C -7 mV/°C
'TJ Temperature Coefficient
VGS = 10 V, ID = 13.5 A 8 9.5
rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 10.9 A 11 14.5 m:

®
VGS = 10 V, ID = 13.5 A, TJ = 125 °C 12 14.5
gFS Forward Transconductance VDD = 10 V, ID = 13.5 A 78 S

Dynamic Characteristics
Ciss Input Capacitance 1195 1585 pF
VDS = 15 V, VGS = 0 V,
Coss Output Capacitance 234 315 pF
f = 1 MHz
Crss Reverse Transfer Capacitance 161 245 pF
Rg Gate Resistance 0.9 2.5 :

Switching Characteristics
td(on) Turn-On Delay Time 9 18 ns
tr Rise Time VDD = 15 V, ID = 13.5 A, 6 12 ns
td(off) Turn-Off Delay Time VGS = 10 V, RGEN = 6 : 23 27 ns
tf Fall Time 4 10 ns
Qg Total Gate Charge VGS = 0 V to 10 V 23 33 nC
Qg Total Gate Charge VGS = 0 V to 5 V VDD = 15 V, 13 18 nC
Qgs Gate to Source Charge ID = 13.5 A 3.5 nC
Qgd Gate to Drain “Miller” Charge 5.1 nC

Drain-Source Diode Characteristics

VGS = 0 V, IS = 2.1 A (Note 2) 0.74 1.2 V
VSD Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 13.5 A (Note 2) 0.84 1.2 V
trr Reverse Recovery Time 20 32 ns
IF = 13.5 A, di/dt = 100 A/Ps
Qrr Reverse Recovery Charge 8 16 nC

NOTES:
1. RTJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by
the user's board design.

a. 50 °C/W when mounted on b. 125 °C/W when mounted on a

a 1 in2 pad of 2 oz copper. minimum pad of 2 oz copper.

2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, L = 0.3 mH, IAS = 19 A, VDD = 27 V, VGS = 10 V.

©2011 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FDMS8888 Rev.C
 FDMS8888 N-Channel PowerTrench MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted

80 4.0

DRAIN TO SOURCE ON-RESISTANCE

PULSE DURATION = 80 Ps
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX 3.5
VGS = 10 V DUTY CYCLE = 0.5% MAX
60 VGS = 3 V
ID, DRAIN CURRENT (A)

VGS = 6 V 3.0

NORMALIZED
VGS = 4.5 V VGS = 3.5 V
2.5
40 VGS = 3.5 V
2.0
VGS = 4.5 V VGS = 6 V
1.5
20

VGS = 3 V 1.0
VGS = 10 V
0 0.5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 20 40 60 80
VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

®
Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage

1.8 40
ID = 13.5 A
DRAIN TO SOURCE ON-RESISTANCE

PULSE DURATION = 80 Ps
SOURCE ON-RESISTANCE (m:)
VGS = 10 V DUTY CYCLE = 0.5% MAX
1.6
30
rDS(on), DRAIN TO

1.4
ID = 13.5 A
NORMALIZED

1.2 20

1.0 TJ = 150 oC
10
0.8
TJ = 25 oC
0.6 0
-75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10
TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On Resistance Figure 4. On-Resistance vs Gate to

vs Junction Temperature Source Voltage

80 100
IS, REVERSE DRAIN CURRENT (A)

PULSE DURATION = 80 Ps VGS = 0 V

DUTY CYCLE = 0.5% MAX
10
60
ID, DRAIN CURRENT (A)

VDS = 5 V
1
TJ = 25 oC
40
0.1 TJ = 175 oC
TJ = 150 oC TJ = 25 oC
20 TJ = -55 oC
0.01

TJ = -55 oC
0 1E-3
0 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode

Forward Voltage vs Source Current

©2011 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FDMS8888 Rev.C
 FDMS8888 N-Channel PowerTrench MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted

10 2000
VGS, GATE TO SOURCE VOLTAGE (V)

ID = 13.5 A Ciss
8 1000

CAPACITANCE (pF)
VDD = 15 V
6
VDD = 10 V
VDD = 20 V
4 Coss

2 f = 1 MHz
VGS = 0 V
Crss
0 100
0 5 10 15 20 25 0.1 1 10 30
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

®
Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain
to Source Voltage

20 60
IAS, AVALANCHE CURRENT (A)

50
ID, DRAIN CURRENT (A)
10 VGS = 10 V
TJ = 100 oC
40
TJ = 25 oC
30
VGS = 4.5 V
TJ = 125 oC
20
Limited by Package
10
o
RTJC = 3.3 C/W
1 0
0.01 0.1 1 10 100 25 50 75 100 125 150
tAV, TIME IN AVALANCHE (ms) TC, CASE TEMPERATURE ( C)
o

Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain

Switching Capability Current vs Case Temperature

100 500
P(PK), PEAK TRANSIENT POWER (W)

100 us
2 VGS = 10 V
10
ID, DRAIN CURRENT (A)

10
1 ms
SINGLE PULSE
RTJA = 125 oC/W
1 THIS AREA IS 10 ms 10
LIMITED BY rDS(on) 100 ms TA = 25 oC

1s
SINGLE PULSE
0.1 TJ = MAX RATED
10 s 1
RTJA = 125 oC/W
o DC
TA = 25 C
0.01 0.2
-3 -2 -1
0.01 0.1 1 10 100 10 10 10 1 10 100 1000
VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec)

Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum
Operating Area Power Dissipation

©2011 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FDMS8888 Rev.C
 FDMS8888 N-Channel PowerTrench MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted

2
1
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL

D = 0.5
0.2
IMPEDANCE, ZTJA

0.1
0.05
0.1 PDM
0.02
0.01
t1
t2
SINGLE PULSE NOTES:
0.01 DUTY FACTOR: D = t1/t2
o
RTJA = 125 C/W PEAK TJ = PDM x ZTJA x RTJA + TA

0.003
-3 -2 -1
10 10 10 1 10 100 1000
t, RECTANGULAR PULSE DURATION (sec)

®
Figure 13. Junction-to-Ambient Transient Thermal Response Curve

©2011 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FDMS8888 Rev.C
 FDMS8888 N-Channel PowerTrench MOSFET
Dimensional Outline and Pad Layout

©2011 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FDMS8888 Rev.C
 FDMS8888 N-Channel PowerTrench MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
2Cool™ FlashWriter® * PDP SPM™ The Power Franchise®
AccuPower™ FPS™ Power-SPM™ The Right Technology for Your Success™
Auto-SPM™ F-PFS™ PowerTrench® ®
®
AX-CAP™* FRFET PowerXS™
® SM
BitSiC Global Power Resource Programmable Active Droop™ tm

TinyBoost™
Build it Now™ Green FPS™ QFET®
TinyBuck™
CorePLUS™ Green FPS™ e-Series™ QS™
TinyCalc™
CorePOWER™ Gmax™ Quiet Series™
TinyLogic®
CROSSVOLT™ GTO™ RapidConfigure™
TINYOPTO™
CTL™ IntelliMAX™ ™
TinyPower™
Current Transfer Logic™ ISOPLANAR™
TinyPWM™
DEUXPEED® MegaBuck™ Saving our world, 1mW/W/kW at a time™
TinyWire™
Dual Cool™ MICROCOUPLER™ SignalWise™
TranSiC®

®
EcoSPARK® MicroFET™ SmartMax™
TriFault Detect™
EfficentMax™ MicroPak™ SMART START™
TRUECURRENT®*
ESBC™ MicroPak2™ SPM®
μSerDes™
® MillerDrive™ STEALTH™
tm MotionMax™ SuperFET®
Fairchild® Motion-SPM™ SuperSOT™-3
mWSaver™ SuperSOT™-6 UHC®
Fairchild Semiconductor®
OptiHiT™ SuperSOT™-8 Ultra FRFET™
FACT Quiet Series™
OPTOLOGIC® SupreMOS® UniFET™
FACT®
OPTOPLANAR® SyncFET™ VCX™
FAST®
® Sync-Lock™ VisualMax™
FastvCore™
®* XS™
FETBench™ tm

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or
intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause
and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or
instructions for use provided in the labeling, can be reasonably effectiveness.
expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition
Datasheet contains the design specifications for product development. Specifications
Advance Information Formative / In Design may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

No Identification Needed Full Production
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild

Obsolete Not In Production
Semiconductor. The datasheet is for reference information only.
Rev. I55

©2011 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FDMS8888 Rev.C