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Unit-V PIN diode

A P-i-N diode features an intrinsic layer between a pn junction, allowing it to block negative voltage and conduct with positive voltage. It has a low concentration of n-type material and is characterized by high breakdown voltage in reverse bias, acting as a constant capacitance when reverse-biased and a variable resistance when forward-biased. The diode is advantageous for high voltage rectification, RF switching, and as a photodetector due to its unique structure.

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3 views10 pages

Unit-V PIN diode

A P-i-N diode features an intrinsic layer between a pn junction, allowing it to block negative voltage and conduct with positive voltage. It has a low concentration of n-type material and is characterized by high breakdown voltage in reverse bias, acting as a constant capacitance when reverse-biased and a variable resistance when forward-biased. The diode is advantageous for high voltage rectification, RF switching, and as a photodetector due to its unique structure.

Uploaded by

saivarsh.reddy247
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Introduction:

A P-i-N diode consists of an intrinsic layer


sandwiched between a pn junction.
Introduction:

A P-i-N diode consists of an intrinsic layer


sandwiched between a pn junction.
It blocks the negative voltage and conducts current
when a positive voltage is applied to the anode.
Introduction:

A P-i-N diode consists of an intrinsic layer


sandwiched between a pn junction.
It blocks the negative voltage and conducts current
when a positive voltage is applied to the anode.
The intrinsic layer has a very low concentration of
(generally) n-type in the order of 1013 cm −3 .
Introduction:

A P-i-N diode consists of an intrinsic layer


sandwiched between a pn junction.
It blocks the negative voltage and conducts current
when a positive voltage is applied to the anode.
The intrinsic layer has a very low concentration of
(generally) n-type in the order of 1013 cm −3 .
The outside p- and n- layers are usually very highly
doped. The wide intrinsic layer provides unique
features of high breakdown voltage in reverse bias.
Introduction:

A P-i-N diode consists of an intrinsic layer


sandwiched between a pn junction.
It blocks the negative voltage and conducts current
when a positive voltage is applied to the anode.
The intrinsic layer has a very low concentration of
(generally) n-type in the order of 1013 cm −3 .
The outside p- and n- layers are usually very highly
doped. The wide intrinsic layer provides unique
features of high breakdown voltage in reverse bias.
In the forward bias, both types of carriers are
injected into the intrinsic layer. The current
conduction is through carrier recombination in the
middle layer.
Characteristics of P-i-N Diode:
When reverse-biased, the pin diode acts like a nearly constant capacitance. When
forward-biased, it acts like a current-controlled variable resistance.
Reverse Biased

Dr. Haitham El-Hussieny


Characteristics of P-i-N Diode:
When reverse-biased, the pin diode acts like a nearly constant capacitance. When
forward-biased, it acts like a current-controlled variable resistance.
Reverse Biased Forward Biased
Introduction.

PIN diode uses and advantages:


High voltage rectifier:
The PIN diode can be used asa high voltage rectifier. The intrinsic region provides a greater
separation between the P and N regions, allowing higher reverse voltages to be tolerated.
Introduction.

PIN diode uses and advantages:


High voltage rectifier:
The PIN diode can be used asa high voltage rectifier. The intrinsic region provides a greater
separation between the P and N regions, allowing higher reverse voltages to be tolerated.

RF switch:
The PIN diode makes an ideal RF switch. The intrinsic layer between the P and N regions
increases the distance between them. This also decreasesthe capacitance between them,
thereby increasing he level of isolation when the diode is reverse biased.
Introduction.

PIN diode uses and advantages:


High voltage rectifier:
The PIN diode can be used asa high voltage rectifier. The intrinsic region provides a greater
separation between the P and N regions, allowing higher reverse voltages to be tolerated.

RF switch:
The PIN diode makes an ideal RF switch. The intrinsic layer between the P and N regions
increases the distance between them. This also decreasesthe capacitance between them,
thereby increasing he level of isolation when the diode is reverse biased.

Photodetector:
Light striking the crystal lattice can release holes and electrons which are drawn away out of
the depletion region by the reverse bias on the diode. By having a larger depletion region - as
in the case of a PIN diode - the volume for light reception is increased. This makes PIN diodes
ideal for use asphotodetectors.
Dr. Haitham El-Hussieny

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