Semiconductor Physics and

Computational Methods
(21PYB102J)

Course Instructor: Dr. Anbumozhi Angayarkanni

Assistant Professor
Department of Physics and Nanotechnology
SRM Institute of Science and Technology
Email: [email protected]
Office: UB-709/A
19 February 2024 1
 Therefore, a field gradient of approximately 1V/ (1010 m) = 1010 Vm1 is
necessary to move an electron from the top of the valence band to the
bottom of the conduction band. Such a high field gradient is not realizable
in practice.

A pure crystal of silicon or germanium is an intrinsic semiconductor.

The electrons that are excited from the top of the valence band to the
bottom of the conduction band by thermal energy are responsible for
conduction. The number of electrons excited across the gap can be
calculated from the Fermi-Dirac probability distribution at
temperature:
1
1  {exp[ E  EF ) / k BT ]}
2
3
4
 At absolute zero, all levels below EF are completely filled
and all levels above EF are completely empty.This level, which divides the filled and vacant states, is
known as the Fermi energy level.

5
6
Intrinsic semiconductors: In semiconductors and insulators,
when an external electric field is applied the conduction is not
possible as there is a forbidden gap, which is absent in metals
(good conductors).
The field that needs to move electron to conduction band is extremely
large. Take the example of silicon, where the forbidden gap is about 1
eV. This is approximately the energy difference between a location
close to an ion core and another location away from the ion core. The
distance between these two locations is about 1 Å (1010 m).

7
The fraction of electrons at energy E is equal to the probability f(E). We can
then write for the number n of electrons promoted across the gap:
n = N exp(Eg/2kBT).

where N is the number of electrons available for excitation from the top of the valence
band. The promotion of some of the electrons across the gap leaves some
vacant electron sites in the valence band. These are called holes. As each
excited electron leaves back one hole, an intrinsic semiconductor contains an
equal number of holes in the valence band and electrons in the conduction
band, that is ne = nh. The number of each of these species is given by
Equation(3). We can then write the conductivity  of an intrinsic semiconductor
as:
i = ne e e + nh e h
where e is the electronic charge, ne and nh are concentrations of electrons and
holes per unit volume.
8
9
10
Fermi level of Intrinsic semiconductor calculation:-
The number of free electrons per unit volume in an intrinsic
semiconductor is ‘n’ in conduction band and the number of holes
per unit volume in an intrinsic semiconductor is ‘p’ in valence
band .
n = p for intrinsic semiconductors.

11
 3/ 2
 2 me*kT   E  Ec 
n  2   exp F 
 
2
 h  kT
electron  density

3
 2m  k T 2

 EV  E F 
p  2 h
 . exp  
 
2
 h  KT
hole  density

3 3
 2 m k T 
*
 F
E
2
 E c   2 m k T 2
 Ev  E F 

2 e
 exp   2  exp
h

2   kT   h
2
 kT 
 h  
int rinsic _ condition : n  p

12
  EF  EC   
(or)

m  exp exp  Ev  EF 
3 3
 2
 m
2
e  h   KT 
kT    
3
2 EF  mh  2
 Ev  Ec 
e kT   exp 
 *   kT 
 me 
2 EF 3  mh    E  Ec 
 loge  *   loge  exp v 
kT 2  me    kT 

3kT  mh   E v  E c 
EF  log e  *    
4  me   2 

13
 If we assume that, m*e  m*h

[since loge1 = 0]

 Ev  Ec 
EF   
 2 
Thus, the Fermi level is located half way between the valence and
conduction band and its position is independent of temperature. Since
mh* is greater than me*, EF is just above the middle, and rises slightly with
increase in temperature as shown in Fig. 1.4.

14
Fig. Position of Fermi level in an intrinsic semiconductor at various
temperatures
(a) at T = 0 K, the Fermi level in the middle of the forbidden gap
(b) as temperature increases, EF shifts upwards

15
16
17
EXTRINSIC SEMICONDUCTOR

In an extrinsic semiconducting material, the charge

carriers originate from impurity atoms added to the original
material is called impurity [or] extrinsic semiconductor.

• This Semiconductor obtained by doping TRIVALENT and

PENTAVALENT impurities in a TETRAVALENT semiconductor.
The electrical conductivity of pure semiconductors may be
changed even with the addition of few amount of impurities.

18
DOPING
The method of adding impurities to a pure semiconductor is
known as DOPING, and the impurity added is called the dopping
agent(Ex-Ar,Sb,P,Ge and Al).
The addition of impurity would increases the no. of free
electrons and holes in a semiconductor and hence increases its
conductivity.

SORTS OF SEMICONDUCTOR according to ADDITION OF

IMPURITIES
n-type semiconductor
p-type semiconductor

19
N – type semiconductor
When penta-valent impurity is added to the intrinsic
semiconductors, n type semi conductors are formed

Fig1.1

Conduction band
Ec
Ed

Donors levels
Eg
occupied
Ev
Valence band
n - type semiconductor
At T = 0K

20
N – type semiconductor
When penta-valent impurity is added to the intrinsic
semiconductors, n type semi conductors are formed

Phosphorus is
number 15 in the
periodic table

It has 15 protons and

15 electrons – 5 of
these electrons are in
its outer shell

The Phosphorus atom Doped in Si

Band diagram of n-type semiconductor
 When small amounts of penta-valent impurity such as
phosphorous are added during crystal formation, the impurity
atoms lock into the crystal lattice.

 Consider a silicon crystal which is doped with a fifth

column element such as P, As or Sb.

 Four of the five electrons in the outermost orbital of the

phosphorus atom take part in the tetrahedral bonding with the
four silicon neighbors.

 The fifth electron cannot take part in the discrete covalent

bonding. It is loosely bound to the parent atom.
23
At OK, the electronic system is in its lowest energy state, all
the valence electron will be in the valence band and all the
phosphorous atoms will be un-ionized.

 The energy levels of the donor atoms are very close to the
conduction band.

 In the energy level diagram, the energy level of the fifth

electron is called donor level. The donor level is so close to the
bottom of the conduction band.

 Most of the donor level electrons are excited into the

conduction band at room temperature and become majority
charge carriers. 24
 Conduction band
Conduction band
Ec
Ec
Ed
Ed
Donors levels
Eg Donors levels
ionised Eg
Ev ionised
Ev
Valence band
Valence band
At T > 0K At T = 300K

If the thermal energy is sufficiently high, in addition to the

ionization of donor impurity atoms, breaking of covalent
bonds may also occur thereby giving rise to generation of
electron hole pair.

25
 Fermi energy
The Fermi energy for n – type semiconductor is given by
 

At 0 K, E F  ( E c  E d )
 
( Ec  Ed ) kT  Nd 
EF   ln  3/ 2 
2 2   2 me* kT  
 2
 h 2

  2
   

Variation of Fermi level with temperature

The Fermi energy is given by,

 2 m e * kT 
3/ 2

Let 2   Nx
 h2 

26
 E

Variation of Fermi level with donor concentration and with temperature

As T increases, Fermi level drops. Also for a given

temperature the Fermi level shift upward as the concentration
increases.
We can say that EF decreases slightly with increase in
temperature.
As the temperature is increased, more and more donor
atoms are ionized. For a particular temperature all the donor,
atoms are ionized.
28
 Further increase in temperature results in generation
of electron-hole pairs due to the breaking of covalence
bonds and the material tends to behave in intrinsic
manner. The Fermi level gradually moves towards the
intrinsic Fermi level Ei .

P -Type Semiconductor

When trivalent impurity is added to intrinsic

semiconductor, P type semi conductors are formed.

Al has three electrons in the outer orbital. While

substituting for silicon in the crystal, it needs an extra-
electron to complete the tetrahedral arrangement of bonds
around it.
29
 The Boron atom doped in Si

Boron is number 5 in the

periodic table

It has 5 protons and 5

electrons – 3 of these
electrons are in its outer
shell
 The extra electron can come only from one of
the neighboring silicon atoms, thereby creating a vacant
electron site (hole) on the silicon.
The Aluminium atom with the extra electron becomes a
negative charge and the hole with a positive charge can be
considered to resolve around the aluminium atom, leading to
the same orbital calculations as aboveT.
Conduction band
Ec

Eg

Ea
Ev
Valence band

p - type semiconductor At T = 0K
31
 Since the trivalent impurity accepts an electron, the
energy level of this impurity atom is called acceptor level.
This acceptor level lies just above the valence bond.

Even at relatively low temperatures, these acceptor

atoms get ionized taking electrons from valence bond and
thus giving to holes in the valence bond for conduction.

Due to ionization of acceptor atoms, only holes and no

electrons are created.

32
 If the temperature is sufficiently high, in addition to the
above process, electron-hole pairs are generated due to the
breaking of covalent bonds.
Thus holes are more in number than electrons and hence
holes are majority carriers and electrons are minority carriers
Conduction band
Ec
Acceptors have
accepted electrons
Eg
from valence band

Ea
Ev

Valence band
(a) At T > 0K (b) At T = 300K

33
34
Band diagram of p-type semiconductor
 Fermi Energy

The Fermi energy for p – type semiconductor is given by

Ev  Ea
At 0 K, EF 
kT

At 0K, Fermi level is exactly at the middle of the acceptor

level on the top of the valence band.

36
 VARIATION OF FERMI LEVEL WITH
TEMPERATURE
 
 
 Ev  E a  kT  Na 
EF
 Ev  Ea 
  
kT 
ln 
Na 
 =   ln  
 2  2  2 2 mh* kT 
3/ 2

 2  2  

  h2 

  Ny 

 2 mh * kT 
3/ 2

where Ny = 2  
 
2
h

 Ev  Ea  kT  N a 
and therefore EF =   ln
 Ny 
 2  2  

From the above eqn, it is seen that EF increases slightly

as the temperature increases.
As the temperature increases, more and more acceptor
atoms are ionised.
 Intrinsic Vs Extrinsic
Intrinsic semiconductors Extrinsic semiconductors
 Equal carrier concentration N-type:
(electron and hole)  Conductivity is mainly due to free
 ni = n = p electrons in n-type semiconductors

 The magnitude of hole mobility is  n >> p

always less than electron mobility  σ = neµe
for semiconductors
P-type:
 Conductivity is given by
 Conductivity is mainly due to free
 σ = neµe+peµh = nie(µe+µh) holes in p-type semiconductors

 p >> n

 σ = peµh
For a particular temperature all the acceptor atoms are ionized.

Further increase in temperature results in generation of electron-hole

pair due to the breaking of covalent bonds and the material tend to behave
in intrinsic manner.

The Fermi level gradually moves towards the intrinsic Fermi level.
E

Na

Na

T 39
DEPARTMENT OF PHYSICS AND NANOTECHNOLOGY
SRM INSTITUTE OF SCIENCE AND TECHNOLOGY
21PYB102J –Semiconductor Physics and Computational Methods

Module-II

Carrier Generation & Carrier

Recombination

40
 Carrier Generation & Recombination

Carrier generation describes processes by which electrons gain energy and

move from the valence band to the conduction band, producing two mobile
carriers; while recombination describes processes by which a conduction
band electron loses energy and re-occupies the energy state of an electron
hole in the valence band.
Semiconductors are characterized by two types of mobile carriers,
electrons in the conduction band and holes in the valence band.
The generation rate gives the number of electrons generated at each
point in the device due to the absorption of photons..
Excess carriers, essential for device operation, are created by optical
excitation, electron bombardment, or injected across a forward-biased p-n
junction. These excess carriers can dominate the conduction process in
semiconductor materials.
41
In semiconductors several different processes exist which lead to generation
or recombination, the most important ones are:

⮚ Photon transition (or) Optical generation/recombination

⮚ Phonon transition (or) Shockley-Read-Hall
generation/recombination
⮚ Auger generation/recombination (or) Three particle transitions
⮚ Impact ionization

In thermal equilibrium, the generation and recombination processes are in

dynamic equilibrium. When the system is supplied with additional energy,
for example through the absorption of photons or the influence of
temperature, additional carriers are generated.
The most important generation/recombination processes for the simulation
of semiconductor devices are summarized in the following.
42
 1. Photon Transition

•Direct generation/recombination process.

•During photon assisted recombination an electron from the conduction band
re-combines with a hole in the valence band.
•The excess energy is transferred to a photon.
•The reverse process obtains its energy from radiation and generates an
43
electron hole pair.
•The photon transition is a direct, band-to-band, generation/recombination
process.
•An electron from the conduction band falls back to the valence-band and
releases its energy in the form of a photon (light).

•The reverse process, the generation of an electron-hole pair, is triggered

by a sufficiently energetic photon which transfers its energy to a valence
band electron which is excited to the conduction band leaving a hole
behind.
•The photon energy for this process has to be at least of the magnitude of
the band-gap energy.

44
2. Phonon Transition (OR) Shockley-Read-Hall generation/recombination

45
•Another process is the generation/recombination by phonon emission.
•This process is trap-assisted utilizing a lattice defect at the energy level Et within
the semiconductor band-gap.
•The excess energy during recombination and the necessary energy for generation
is transferred to and from the crystal lattice (phonon).
•A theory describing this effect has been established by Shockley, Read, and Hall.
•Therefore, the effect is referred as Shockley-Read-Hall (SRH)
generation/recombination.
•Four sub-processes are possible:
Electron capture. An electron from the conduction band is captured by an empty
trap in the band-gap of the semiconductor. The excess energy of Ec - Et is
transferred to the crystal lattice (phonon emission).

Hole capture. The trapped electron moves to the valence band and neutralizes a
hole (the hole is captured by the occupied trap). A phonon with the energy Et -
Ev is generated.
46
Hole emission. An electron from the valence band is trapped leaving a hole in the
valence band (the hole is emitted from the empty trap to the valence band). The
energy necessary for this process is Et - Ev.

Electron emission. A trapped electron moves from the trap energy level to the
conduction band. For this process additional energy of the magnitude Ec - Et has to
be supplied.

47
3. Auger generation/recombination (or) Three particle transitions

48
•In the direct band-to-band Auger mechanism three particles are involved.
•During generation an electron hole pair is generated consuming the energy of a
highly energetic particle.
•In the opposite process, when an electron hole pair recombines, the excess energy
is transferred to a third particle.
In detail the four possible processes are as follows:
•Electron capture. An electron from the conduction band moves to the valence band
neutralizing a hole in the valence band. The excess energy is transferred to an
electron in the conduction band.
•Hole capture. Again, an electron from the conduction band moves to the valence
band and recombines with a valence hole. The excess energy is, in contrast to
Process 1, transferred to another hole in the valence band.
•Electron emission. A highly energetic electron from the conduction band transfers
its energy to an electron in the valence band. The valence electron moves to the
conduction band generating an electron hole pair.
•Hole emission. A highly energetic hole from the valence band transfers its energy
to an electron in the valence band which is then excited to the conduction band49
generating an electron hole pair.
4. Impact ionization

50
•Impact ionization is a pure generation process.
•Microscopically it is exactly the same mechanism as the generation part of the
Auger process: a highly energetic carrier moves to the conduction or valence band,
depending on the carrier type, and the excess energy is used to excite an electron
from the valence band to the conduction band generating another electron hole pair.
•The major difference is the cause of the effect.
•While it is purely the carrier concentration in the Auger mechanism, for impact
ionization it is the current density.

•Two partial processes can be distinguished:

•Electron emission. A highly energetic electron from the conduction band transfers
its energy to an electron in the valence band. The valence electron moves to the
conduction band generating an electron hole pair.

•Hole emission. A highly energetic hole from the valence band transfers its energy
to an electron in the valence band which is then excited to the conduction band
generating an electron hole pair. 51
The net flow of the ‘electron and holes’ in a semiconductor generates the
current.

The process through which these charged particles move is called

transport.

Two basic transport namely : Drift & Diffusion.

The carrier transport phenomena are the foundation for finally determining
the current-voltage characteristics of semiconductor devices.

Subtopic :
I. Carrier Drift
II. Carrier Diffusion
52
 Carrier Transport

Drift The electric field

Diffusion
The movement
(E) is involved in or flow of the
the movement of charge carrier
the charge due to density
carrier. gradient (dn/dx)

53
 Carrier Transport Phenomena

Random motion of Random motion and net movement along the

carriers without applied direction of field

field Net carrier displacement and thus a net velocity

along the field.

No net carrier This velocity is called the drift velocity, which gives
drift current.
displacement
54
Carrier Drift

55
 Current density
• In semiconductors, It is useful to compare current density ‘J’
rather than current ‘I’
I
J=
area

• Ohm’s Law:

V rL
R= =
I A

• Where ρ is resistivity (in ohm-cm), L is length and A is cross-

sectional area
 Let electric field be E
• I=JA and V =E L
Therefore
EL r L
=
JA A
Or
E
J ( drift ) = = sE
r

Where s = 1 / r is the conductivity (in ohm-cm-1)

Note we added subscript “drift” to J
The electric current density is given by

J=nevd ; vd is the drift velocity

The conductivity is σ = J/E = (nevd /E)

σ = (ne /E) (eEτ/m) with vd = (eEτ/m)

σ = (ne2τ/m) , τ is the relaxation time between collisions

Again vd = μ E, μ is the mobility of charge carrier within the crystal.

Thus, J = nevd = ne μ E

σ = J/E = ne μ

or in terms of resistivity ρ
ρ = 1/ σ = 1/ ne μ

If the material is a semiconductor, the current flow would be due to electron and
hole movement. 58
Correspondingly the current densities due to electron drift and hole are:

Jn (drift) = n μn eE

Jp (drift) = p μp eE

J (drift) = Jn (drift) + Jp (drift)

J (drift) = n μn eE + p μp eE

Comparison with J = σ E

σ= n μn e + p μp e

For an intrinsic semiconductor n = p = np

σi = nie(μn + μp )
59
Carrier Diffusion

60
Diffusion Current
The electrons present at left side of the
semiconductor material that moves to right
side, to reach the uniform concentration of
electrons.

The semiconductor material achieves equal

concentration of electrons. Electrons that
moves from left side to right side will
constitute current. This current is called
diffusion current.

•In p-type semiconductor, the diffusion process occurs in the similar manner.

61
Let us suppose that the concentration n of electrons varies with distance ‘x’
In the semiconductor, the concentration of gradient being

(dn/dx)

Fick’s law states that the rate at which carriers diffuse is proportional to
the density gradient and the movement is in the direction of negative
Gradient, the rate of flow of electrons is proportional to

-dn/dx

From which the rate of flow across unit area is got, equal to

-Dn (dn/dx), Where Dn is the diffusion coefficient for electron

Jn( diffusion) = -(e) (rate of flow across unit area)

= eDn (dn/dx)
62
If an excess hole concentration is created in the same region, hole
Diffusion takes place in the same direction at a rate per unit area

= - Dp (dp/dx)

Resulting in a hole diffusion current density.

Jp( diffusion) = +(e) (rate of flow across unit area)

= - eDp (dp/dx) Where Dp is the hole diffusion coefficient

If there is an electric field E and a concentration gradient in the x-direction,

the total hole current is the sum of the drift current.

Jp = Jp (drift) + Jp (diffusion)

Jp = peμpE - eDp (dp/dx)

Similarly for electrons, the total current density

Jn = neμnE + eDn (dn/dx)

63
 CONTINUITY EQUATION

⮚ In the previous sections, we have understood the following concepts.

• Drift due to an electric field.

• Diffusion due to a concentration gradient.
• Recombination of carriers through intermediate-level recombination centers.

• The drift, diffusion, and recombination processes occur simultaneously in a

semiconductor material. The governing equation is called the continuity

equation.

64
 ⮚ The continuity equation describes
a basic concept, namely that a
change in carrier density over
time is due to the difference
between the incoming and
outgoing flux of carriers plus
the generation and minus the
Electron currents and possible recombination and recombination.
generation processes

The flow of carriers and recombination and generation rates are illustrated in the
above figure.

65
One-dimensional continuity equation for electrons

• Consider an infinitesimal slice with thickness dx located at x.

• The number of electrons in the slice may increase due to the net current flow into
the slice and the net carrier generation in the slice (mainly four components
contribution). {Law of conservation of charges}
• The number of electrons flowing into the slice at x, minus the number of
electrons flowing out at (x+dx), plus the rate at which electrons are generated,
minus the rate at which they are recombined with holes in the slice.
• The first two components are found by dividing the currents at each side of the slice
by the charge of an electron.
• The generation and recombination rates are designated by Gn and Rn ,
respectively.
• The overall rate of change in the number of electrons in the slice is given as below
where
A is the cross-sectional area
Adx is the volume of the slice
66
66
 Expanding the expression for the current at x + dx in Taylor series yields

We thus obtain the basic continuity equation for electrons:

A similar continuity equation can be derived for holes, except that the sign of the first
term on the right-hand side of the Equation is changed because of the positive charge
associated with a hole.
Gn = e- generation rate
Rn = e- recombination rate
Gp = hole generation rate
Rp = hole recombination rate

67
For the one-dimensional case under low-injection condition, small electric
field, uniform doping etc.
The continuity equations for minority carriers :
(i.e., np in a p-type semiconductor or pn in an n-type semiconductor)

68
 ̶
=

̶
=

69
 DEPARTMENT OF PHYSICS AND NANOTECHNOLOGY
SRM INSTITUTE OF SCIENCE AND TECHNOLOGY

Module-II

Basic Structure of p-n Junction, Band

Diagram of p-n Junction in Thermal
Equilibrium

70
 Basic Structure of p-n Junction, Band
Diagram of p-n Junction in Thermal
Equilibrium
p-n junction is one of the basic building blocks of integrated circuits. Such a junction
can be formed by selective diffusion or ion implantation of n-type or p-type dopant to
the p-type or n-type semiconductor.

When p-region and n-region are brought in close contact a p-n junction forms due
to the diffusion of charge carriers. While, holes diffuse from p region to n region,
electrons diffuse from n region to p region.

Under thermal equilibrium a built in electric field directed from positive to negative
charge which gives rise to drift current and no net transport of carriers due to
diffusion is observed across the potential barrier(also called as depletion region).

At thermal equilibrium, drift and diffusion component of current must cancel each
other, Jn and Jp is zero. Hence the Fermi level must be constant throughout and the
electron and hole concentrations on both sides remain same.

While in thermal equilibrium no external voltage is applied between the n-type

and p-type material, there is an internal potential, φi, which is caused by the work
function difference between the n-type and p-type semiconductors. This potential
equals the built-in potential. 71
p-n Junction Diode
p-n Junction Diode
Depletion Region
 Basic Structure of p-n Junction, Band
Diagram of p-n Junction in Thermal
Equilibrium

Flat band diagram

Energy band diagram of a p-n junction (a) before and (b)

after merging the n-type and p-type regions

74
 Basic Structure of p-n Junction, Band
Diagram of p-n Junction in Thermal
Equilibrium

Energy band diagram of a p-n junction in thermal equilibrium

75
 p-n Junction Diode
Band Diagram at thermal equilibrium
 Basic Structure of p-n Junction, Band
Diagram of p-n Junction in Thermal
Equilibrium
Fermi level on p-region and n-region is given by

EF =Eip - kT/2 ln(Na/ni) for p-region

EF =Ein + kT/2 ln(Nd/ni) for n-region

EF(p-region) = EF(n-region)

Eip – Ein =kT/2 ln(NaNd/ni2)

If Eip – Ein =Vbi, Built in Potential, then Vbi = kT/2 ln(NaNd/ni2)

77
Basic Structure of p-n Junction, Band
Diagram of p-n Junction in Thermal
Equilibrium

78
 Basic Structure of p-n Junction, Band
Diagram of p-n Junction in Thermal
Equilibrium
p-n junction under forward biasing

When the p-n junction is applied with external voltage both electrons
and hole concentrations deviates from their equilibrium values. Also
potential difference across depletion region deviates from its
equilibrium value Vbi by an amount of applied bias.

When the p-n junction is forward biased by Vf ,ie., positive terminal of

the battery is connected to the p-region and the negative terminal of
the battery is connected to the n-region, the potential difference
across the depletion region decreases by Vbi – Vf .The width of
depletion region decreases. Thus more electrons move from n region
to p region and increase the diffusion current.

79
p-n Junction Diode
Forward Biased
Basic Structure of p-n Junction, Band
Diagram of p-n Junction in Thermal
Equilibrium

81
 Basic Structure of p-n Junction, Band
Diagram of p-n Junction in Thermal
Equilibrium
p-n junction under reverse biasing

When the p-n junction is reverse biased by Vr ,ie., positive terminal of

the battery is connected to the n-region and the negative terminal of
the battery is connected to the p-region, the potential difference
across the depletion region increases by Vbi +Vr. The width of
depletion region increases. Thus no electrons from n region and no
holes from p region diffuse across the junction. Now the current is
due to the diffusion of minority charge carriers in the p and n region
which is extremely small.

82
p-n Junction Diode
Reverse Biased
Basic Structure of p-n Junction, Band
Diagram of p-n Junction in Thermal
Equilibrium

84
Reverse Biasing No Biasing Forward Biasing

85
 Basic Structure of p-n Junction, Band
Diagram of p-n Junction in Thermal
Equilibrium

Junction Diode Symbol and Static I-V Characteristics 86

 DEPARTMENT OF PHYSICS AND NANOTECHNOLOGY
SRM INSTITUTE OF SCIENCE AND TECHNOLOGY

Module-II

Metal-semiconductor junction
Ohmic Contact and Schottky Junction

87
 Metal-semiconductor junction
Ohmic Contact and Schottky Junction

 The metal semiconductor junction is the oldest practical

semiconductor device.

 It can be either rectifying or non-rectifying.

The rectifying semiconductor junction is called as Schottky diode

and the non-rectifying junction is called as Ohmic contact.

88
 Rectifying Junction or Schottky Junction

Whenever, the work function of n type semiconductor (φn) is smaller than that of
metal (φm) or the work function of p type semiconductor (φp) is greater than that of
metal (φm) , it forms rectifying or Schottky junction.

Let φm and φn be the work function of metal and n type semiconductor, respectively
where
φm > φn.
When metal semiconductor contact is made, the conduction electrons begin to flow
from the semiconductor in to the metal until the Fermi energies on both sides of the
junction becomes equal. Therefore, metal becomes negative charged and the n-type
semiconductor becomes positive charged. As a result potential barrier is formed at
the metal semiconductor junction equal to φm – φn =eV0.

When potential is applied to the system after contact such that

N-type is connected to positive charge and metal to negative charge, the height of
the barrier on the semiconductor side increases by (V0+Vext) and the metal
remains unchanged. Therefore the junction is said to be reverse biased and the
current flows from semiconductor to metal. 89
 Rectifying Junction or Schottky Junction

• Conversely if the voltage is reversed, so as to make

semiconductor negative charge and metal positive charge, the
height of the barrier on the semiconductor side decreases by
(V0 - Vext) and the metal remains unchanged. Therefore the
junction is said to be forward biased and the current flows from
metal to semiconductor.

• For forward bias, the net current increases exponentially with

applied voltage.
• For reverse bias, the net current is constant.
• Hence, the metal semiconductor contact acts like a rectifier i.e. it
conducts in forward bias but not in reverse bias and hence called
as rectifying contact.

90
Rectifying Junction or Schottky Junction

91
Rectifying Junction or Schottky Junction

92
Rectifying Junction or Schottky Junction

93
Rectifying Junction or Schottky Junction

94
Rectifying Junction or Schottky Junction

95
 Non-Rectifying Junction or Ohmic Junction

Whenever, the work function of metal is smaller than that of n type

semiconductor it forms non rectifying or Ohmic junction.

Let φm and φn be the work function of metal and n type semiconductor ,

respectively where
φm < φn.
When metal semiconductor contact is made, the conduction electrons begin
to flow from the metal to semiconductor until the Fermi energies on both
sides of the junction becomes equal. Therefore, metal becomes positive
charged and the n-type semiconductor becomes negative charged. As a
result potential barrier is formed at the metal semiconductor junction equal to
φn – φm =eV0.

When potential is applied to the system after contact such that

N-type is connected to positive charge and metal to negative charge, the

electrons flow from semiconductor to metal without encountering an
appreciable barrier. 96
 Non-Rectifying Junction or Ohmic Junction

Conversely if the voltage is reversed, so as to make semiconductor negative

charge and metal positive charge, the electrons flow from metal to
semiconductor without any change in barrier.

Thus in both the cases the current is directly proportional to the applied
voltage in accordance with ohms law. Such contacts are called as Ohmic
contacts.

Thus, a Ohmic junction behaves as a resistor conducting in both forward and

reverse bias. The resistivity is determined by the bulk resistivity of the
semiconductor.

97
Non-Rectifying Junction or Ohmic Junction

98
Non-Rectifying Junction or Ohmic Junction

99
Rectifying Junction or Schottky Junction

100
DEPARTMENT OF PHYSICS AND NANOTECHNOLOGY
SRM INSTITUTE OF SCIENCE AND TECHNOLOGY

1. Semiconductor material for optoelectronic

applications – Introduction
2. Photocurrent in a P-N junction diode

101
 Semiconductor material for
optoelectronic applications – Introduction

Major semiconducting materials used for optoelectronics are III – V and

II – VI groups.
Among the two groups of semiconductors, III – V is more suitable as
they are direct band gap materials which is necessary condition needed
for opto electronic devices to convert electrical energy into light energy
conversion.
III – V materials – Column III and V in the periodic table
III column – Al, Ga, In
V column - N, P, As, Sb

102
103
 Semiconductor material for
optoelectronic applications – Introduction

Important applications for some III – V semiconducting materials:

AlGaAs – Light emitter and modulator

GaInAsP – Optoelectronic device

AlGaInP – Red Emitter LED

GaAsP – Visible LED

AlGaAsSb – Light emitter and detector

104
 Semiconductor material for
optoelectronic applications – Introduction

The suitable choice of above materials depends on their quantum

dimensions (1D, 2D or 3D) for optoelectronic applications.

II – VI semiconducting materials – column II and VI in periodic table.

They are having wide range of optoelectronic properties ranging from
far IR to UV region. This can be easily tuned to different band gap
(Eg) by incorporating magnetic ions. They have stronger polarity due
to ionic bonding character.
105
 Semiconductor material for
optoelectronic applications – Introduction

Important applications of some II – VI semiconductors:

ZnSe – Blue-Green LEDs

ZnS – UV emitters, Display

ZnO – UV emitters

CdS – Visible light LEDs

CdSe – Colour LEDs (Short wave)

106
 Semiconductor material for
optoelectronic applications – Introduction

107
18PYB103J Module 2 Lecture 13
 WHAT IS PHOTO DIODE?

•It is a form of light-weight sensor that converts light energy into electrical
voltage or current.
•Photodiode is a type of semiconducting device with PN junction.
•Between the p (positive) and n (negative) layers, an intrinsic layer is
present.
•The photo diode accepts light energy as input to generate electric current.
•It is also called as Photodetector, photo sensor or light detector.
•Photo diode operates in reverse bias condition i.e. the p – side of the
photodiode is connected with negative terminal of battery (or the power
supply) and n – side to the positive terminal of battery.
108
 WHAT IS PHOTO DIODE?

•Typical photodiode materials are Silicon, Germanium, Indium Gallium

Arsenide Phosphide and Indium gallium arsenide.
•Internally, a photodiode has optical filters, built in lens and a surface
area.
•When surface area of photodiode increases, it results in more response
time.
•Few photo diodes will look like Light Emitting Diode (LED).
• It has two terminals as shown in the picture.
•The smaller terminal acts as cathode and longer terminal acts as anode.

109
 PHOTO CURRENT IN PN JUNCTION
DIODE (PHOTO DIODE)

•In a photodiode, the incident optical signal generates electron-hole

pairs that gives rise to a photo current across PN junction.
•When a PN junction is illuminated with light of photon energy (E)
greater than Eg, photons are absorbed in semiconductor and electron-
hole pairs are generated both in n-region and p-region of the junction.

110
18PYB103J Module 2 Lecture 13
 PHOTO CURRENT IN PN JUNCTION
DIODE (PHOTO DIODE)

•For the electron-hole pair to contribute towards current in external

circuit, the generated electron and holes must be separated before
they recombine.
•Once electron-hole pairs are generated in the depletion layer, the
electric field in the built-in-potential or contact potential sweeps
away the electron and holes in opposite directions.
•The photo generated minority carriers which are generated within
one diffusion length from the depletion layer edge, can also diffuse
to the depletion region without recombining.
111
 PHOTO CURRENT IN PHOTO DIODE

•They are then swept across the junction due to the electric field
present in the depletion region.
•Due to the direction of electric field being from the n-region to p-
region, the holes flow towards the p-region and electrons to the n-
region.
•Since the direction of this photo generated current IL is opposite to
that in a forward-biased diode, the total current in the illuminated PN
junction diode is

IL = In+ Ip+ Id
112
 WORKING OF A PHOTODIODE

•Generally, when a light is made to illuminate the PN junction, covalent

bonds are ionized. This generates hole and electron pairs. Photocurrents
are produced due to generation of electron-hole pairs. Electron hole pairs
are formed when photons of energy more than 1.1eV hits the diode.
•When the photon enters the
depletion region of diode, it hits
the atom with high energy.
•This results in release of electron
from atom structure. After the
electron release, free electrons
and hole are produced. 113
 WORKING OF A PHOTODIODE

•In general, an electron will have negative charge and holes will have a
positive charge.
•The depletion region will have built-in electric filed.
•Due to this built-in electric filed, electron hole pairs move away from the
junction.
•Hence, holes move to anode and electrons move to cathode to produce
photo current.
•The photon absorption intensity and photon energy are directly
proportional to each other.
•When energy of photons is less, the absorption will be more. This entire
process is known as Inner Photoelectric Effect. 114
ENERGY BAND DIAGRAM OF A
PHOTODIODE

115
 PHOTO CURRENT IN PHOTO DIODE

The photocurrent generated in photodiode has three component

1.Photo generated current in space-charge region

2.Photo generated current in n-region
3.Photo generated current in p-region

If G is the generation rate of excess

carrier and A is diode area then photo current, the excess carrier in
depletion region quickly moved by electric field (electron to n-region
and holes to p-region).
116
 PHOTO CURRENT IN PHOTO DIODE

•The photo generated current in the depletion region is

I1  Ae  Gdx  eGWA

where W is the depletion width and this current is very fast (prompt
photocurrent).
•In addition to the carriers generated in the depletion region,
electron-hole pairs are generated in the n-region and p-region of the
diode.

117
 PHOTO CURRENT IN PHOTO DIODE

•We may expect that holes generated within a distance Lp (the

diffusion length) of the depletion region edge will be able to enter the
depletion region from where the electric field will sweep them into p-
side.
I p  eGL L p A

•Similarly, excess electrons produced in p region will give photo

current.
I n  eGL Ln A
118
 PHOTO CURRENT IN PHOTO DIODE

•So total current due to carriers in the neutral region and the depletion
region is given by I L  eGL ( Lp  Ln  W ) A

119
DEPARTMENT OF PHYSICS AND NANOTECHNOLOGY
SRM INSTITUTE OF SCIENCE AND TECHNOLOGY

1. Light emitting diode – Construction &

Working
2. Classification of Light emitting diode (edge
and surface)

120
18PYB103J Module 2 Lecture 14
 What is LED?

LED are semiconductor p-n junctions that under forward bias conditions can
emit radiation by electroluminescence in the UV, visible or infrared regions
of the electromagnetic spectrum. The quanta of light energy released is
approximately proportional to the band gap of the semiconductor.. 121
 122
18PYB103J Module 2 Lecture 14
•A light emitting diode (LED) is essentially a PN junction opto-
semiconductor that emits a monochromatic (single color) light when
operated in a forward biased direction.

•LEDs convert electrical energy into light energy. They are frequently
used as "pilot" lights in electronic appliances to indicate whether the
circuit is closed or not.

123
 Light Emitting Diodes
Principle
•The p-n junction diode is forward biased. Due to forward bias, the
majority carriers from ‘n’ and ‘p’ regions cross the junction and
become minority carriers in the other junction (i.e.) Electrons, which
are majority carriers in ‘n’ region cross the junction and go to ‘p’
region and become minority carriers in p-region.
•Similarly, holes which are majority carries in ‘p’ region cross the
junction and go to ‘n’ region and become minority carriers in ‘n’
region and this phenomenon is called minority carrier injection.
124
 Radiative Recombination

Now if the biasing

voltage is further
increased, these
excess minority
carriers diffuse away from the junction and they directly recombine
with the majority carriers. (i.e.) the electrons, which are excess
minority carriers in p-region recombine with the holes which are the
majority carriers in ‘p’ region and emit light. Similarly, the holes
which are excess minority carriers in ‘n’ region recombine with the
electrons which are majority carriers in ‘n’ region and emit light. 125
Radiative Recombination

126
 Radiative Recombination

Thus radiative recombination events lead to photon emission. The

number of radiative recombination is proportional to the carrier
injection rate and hence to the total current flowing through the device
  eV  
as given by I I 0 exp    1
   kT  

where I0 - the saturation current ; V- the forward bias voltage; k - the

Boltzmann constant ;  -varies from 1 and 2 depending on the
semiconductor and temperature.
The optical photon emitted due to radiative recombination has the energy
very close to the bandgap energy Eg and frequency of the emitted photon is
hc
given by  E g where  - the photon wavelength; h – Planck’s

127
constant; c - the velocity of light in vacuum.
 LED Construction

An LED must be constructed such that the light emitted by the

radiative recombination events can escape the structure.

128
Surface Emitting LED

129
Edge Emitting LED

130
Construction of Typical LED

131
 LED Construction

•LEDs can be designed as either surface or edge emitters.

•Surface emitting LEDs can be made such that the bottom edge reflects
light back towards the top surface to enhance the output intensity.
•The main advantage of edge emitter LEDs is the emitted radiation is
relatively direct. Hence edge emitter LEDs have a higher efficiency in
coupling to an optical fiber.
•Although the internal quantum efficiency of LEDs is 100%, the external
efficiencies are much lower. The main reason is that most of the emitted
light radiation strikes the material interface at greater than critical angle
and hence trapped with in the device. The internal critical angle at the
n2
semiconductor – air boundary is given by sin  c  132
n1
 Critical angle

Where n1 is the refractive index of air = 1.0

n2 is the refractive index of the semiconductor
For group III semiconductor n2 = 3.5
Therefore c = 16°

Therefore all rays of light striking the surface at an angle exceeding

16° suffer total internal reflection and as a result most of the emitted
light is reflected back inside the semiconductor crystal.
133
Inside a Light Emitting Diode

1. Transparent
Plastic Case
2. Terminal Pins
3. Diode

134
 Hemispherical Dome shape
• Hence to improve the external efficiency, losses caused by bulk
absorption has to be minimized and the surface transmission has to be
increased. One method to achieve this is to give the semiconductor a
dome structure.
• Hemi spherical domes made from plastics are effective in increasing
the external efficiency by a factor 2 or 3. There will be some losses
at the plastic/ air interface but
these are easily minimized by
molding the plastic into an
approximately hemispherical
135
shape.
Hemispherical Dome shape

136
 LED Materials

• The choice of the materials for an LED is decided by the spectral

requirements for a particular application.
•The most commonly used materials for LEDs are GaP, GaAs and
their related ternary compound Ga Asx P1-x
•GaP which gives a peak at 560 nm is very close to the wavelength of
maximum eye response.

137
 LED Materials

•This makes GaP one of the most useful of all visible semiconductor
light sources since in addition to green light both red and other colours
can be produced by appropriate dopants.
Band Quantum
Wavelength
Material Dopant gap efficiency
( Nm)
Wavelength response (eV) ( %)

of LED materials GaP N 2.88 430 0.6

GaP Zn 1.80 690 0.2
GaP N 2.25 550 0.1
GaAs P 1.88 660 0.2
AlGa As 1.84 675 0.2

138
DEPARTMENT OF PHYSICS AND NANOTECHNOLOGY
SRM INSTITUTE OF SCIENCE AND TECHNOLOGY

1. Introduction to Optoelectronic integrated

circuits
2. Organic light emitting diodes – basic
concepts

139
 ORGANIC LIGHT EMITTING DIODE (OLED)

A type of LED where emissive electroluminescent layer is a film of

organic compound which emit light in response to an electric current.

Structure of OLED:
A simple OLED is made of six different layers. On the top and bottom
layers of protective glass or plastic. The top layer is called seal and the
bottom layer is substrate. In between seal and substrate, a negative
terminal (cathode) and positive terminal (anode), and finally between
cathode and anode there are two layers made of organic molecules called
emissive layer which produces light and the conductive layer.
140
 ORGANIC LIGHT EMITTING DIODE (OLED)

1. Substrate – Clean glass / plastic

2. Anode – Positively charged (Indium Tin Oxide) which ejects holes
3. Organic layer –Emissive and Conductive layers –Polyaniline and Polyfluorene
4. Cathode – Negatively charged which injects electrons
Conjugated polymers are having characteristics of LED and having
energy gap (Eg) same like semiconductors by doping with p-type/ n-type
materials used for light emission 141
 OLED COMPONENTS

Like an LED, an OLED is a solid-state semiconductor device that is 100

to 500 nanometers thick or about 200 times smaller than a human hair.
OLEDs can have either two layers or three layers of organic material; in
the latter design, the third layer helps transport electrons from the
142
cathode to the emissive layer.
 HOW DO OLEDS EMIT LIGHT?

OLEDs emit light in a similar manner to LEDs, through a process

called electro phosphorescence.
The process is as follows:
1. The battery or power supply of the device containing the OLED applies
a voltage across the OLED.
2. An electrical current flows from the cathode to the anode through the
organic layers (an electrical current is a flow of electrons). The cathode
gives electrons to the emissive layer of organic molecules. The anode
removes electrons from the conductive layer of organic molecules. (This
is the equivalent to giving holes to the conductive layer.)
143
HOW DO OLEDS EMIT LIGHT?

144
 HOW DO OLEDS EMIT LIGHT?

3. At the boundary between the emissive and the conductive layers,

electrons find electron holes. When an electron finds an electron hole, the
electron fills the hole (it falls into an energy level of the atom that‘s
missing an electron). When this happens, the electron gives up energy in
the form of a photon of light.
4. The OLED emits light.
5. The color of the light depends on the type of organic molecule in the
emissive layer. Manufacturers place several types of organic films on the
same OLED to make color displays.
6. The intensity or brightness of the light depends on the amount of
electrical current applied: the more current, the brighter the light. 145
 TYPES OF OLEDS

TYPES OF OLED

1. Passive-matrix OLED (PMOLED) – PMOLEDs have strips of cathode,

organic layers and strips of anode. The anode strips are arranged
perpendicular to the cathode strips. The intersections of the cathode and
anode make up the pixels where light is emitted. External circuitry
applies current to selected strips of anode and cathode, determining
which pixels get turned on and which pixels remain off. Again, the
brightness of each pixel is proportional to the amount of applied current.

146
 TYPES OF OLEDS

PMOLEDs are easy to make, but they consume more power than
other types of OLED, mainly due to the power needed for the external
circuitry. PMOLEDs are most efficient for text and icons and are best suited
for small screens (2- to 3-inch diagonal) such as those you find in cell
phones, Personal Digital Assistants ( PDAs) and MP3 players. Even with
the external circuitry, passive-matrix OLEDs consume less battery power
than the LCDs that currently power these devices.

147
18PYB103J Module 2 Lecture 15
 TYPES OF OLEDS

2. Active-matrix OLED (AMOLED) – AMOLEDs have full layers of

cathode, organic molecules and anode, but the anode layer overlays a
thin film transistor (TFT) array that forms a matrix. The TFT array itself
is the circuitry that determines which pixels get turned on to form an
image.
AMOLEDs consume less power than PMOLEDs because the TFT array
requires less power than external circuitry,
so they are efficient for large displays.
AMOLEDs also have faster refresh rates suitable
for video. The best uses for AMOLEDs
are computer monitors, large-screen
148
TVs and electronic signs or billboards.
 TYPES OF OLEDS

3. Transparent OLED (TOLED) - Transparent OLEDs have only

transparent components (substrate, cathode and anode) and, when turned
off, are up to 85 percent as transparent as their substrate. When a
transparent OLED display is turned on, it allows light to pass in both
directions. A transparent OLED display
can be either active- or passive-matrix.
This technology can be used for
heads-up displays.

149
 TYPES OF OLEDS

4. Top-emitting OLED (TEOLED) - Top-emitting OLEDs have a substrate

that is either opaque or reflective. They are best suited to active-matrix
design. Manufacturers may use top-emitting OLED displays in smart
cards.

150
 TYPES OF OLEDS

5. Foldable OLED (FOLED) - Foldable OLEDs have substrates made of

very flexible metallic foils or plastics. Foldable OLEDs are very

lightweight and durable. Their use in devices such as cell phones and

PDAs can reduce breakage, a major cause for return or repair.

Potentially, foldable OLED displays can be attached to fabrics to create

"smart" clothing, such as outdoor survival clothing with an integrated

computer chip, cell phone, GPS receiver and OLED display sewn into it.
151
 TYPES OF OLEDS

6. White OLED (WOLED) - White OLEDs emit white light that is brighter,

more uniform and more energy efficient than that emitted by fluorescent

lights. White OLEDs also have the true-color qualities of incandescent

lighting. Because OLEDs can be made in large sheets, they can replace

fluorescent lights that are currently used in homes and buildings. Their

use could potentially reduce energy costs for lighting.

152
 OLED ADVANTAGES

The LCD is currently the display of choice in small devices and is also
popular in large-screen TVs. Regular LEDs often form the digits on
digital clocks and other electronic devices. OLEDs offer many
advantages over both LCDs and LEDs:
1. The plastic, organic layers of an OLED are thinner, lighter and more
flexible than the crystalline layers in an LED or LCD.
2. OLEDs are brighter than LEDs. Because the organic layers of an OLED
are much thinner than the corresponding inorganic crystal layers of an
LED, the conductive and emissive layers of an OLED can be multi-
layered. Also, LEDs and LCDs require glass for support, and glass
absorbs some light. OLEDs do not require glass. 153
 OLED ADVANTAGES

3. OLEDs do not require backlighting like LCDs and hence

they consume much less power than LCDs. This is especially
important for battery-operated devices such as cell phones.
4. OLEDs are easier to produce and can be made to larger sizes.
Because OLEDs are essentially plastics, they can be made into
large, thin sheets.
5. OLEDs have large fields of view, about 170 degrees. OLEDs
produce their own light, so they have a much wider viewing range.

154
 OLED DISADVANTAGES

OLED seems to be the perfect technology for all types of displays,

but it also has some problems:

1. Lifetime - While red and green OLED films have longer lifetimes
(46,000 to 230,000 hours), blue organics currently have much
shorter lifetimes.
2. Manufacturing - Manufacturing processes are expensive right now.
3. Water - Water can easily damage OLEDs

155
 OLED APPLICATIONS

1. OLEDs are used in small-screen devices such as cell phones, PDAs

and digital cameras.
2. Because OLEDs refresh faster than LCDs -- almost 1,000 times faster
-- a device with an OLED display could change information almost in
real time.
3. Several companies have already built prototype computer monitors
and large-screen TVs that use OLED technology.

156
 OPTOELECTRONIC INTEGRATED CIRCUITS

• Optoelectronic Integrated Circuits (OEICs) involve monolithic

integration of optical devices (lasers, waveguides) and electronics
(transistors, modulators) devices.
• Integrated optoelectronic circuits (OEICs) have numerous applications
in the different fields of applied science and engineering due to their
advantages such as high data transmission speed, improved reliability,
small size, light weight and potential low cost.
• Due to these advantages, it is now widely recognized that monolithic
OEICs will play an important role in the field of data processing and
transmission. 157
18PYB103J Module 2 Lecture 15
 OPTOELECTRONIC INTEGRATED CIRCUITS

• An OEIC consists of active and passive components,

monolithically integrated on the same substrate.
• The active components are those components which
require the application of voltage or the passage for current (i.e. they are
the components which have to be integrated with electronic circuits).
• The passive components are those components which do not require
electric signals for their operation.
• Therefore, the active components are lasers, photo detectors, switches,
modulators etc and the passive components are spectral filters, couplers,
multiplexers, de-multiplexers, lenses etc. 158
18PYB103J Module 2 Lecture 15
 OPTOELECTRONIC INTEGRATED CIRCUITS

• Most optical elements should be connected with electronic circuitry in

an OEIC. It is reasonable to expect that the progress in optoelectronic
device technology will follow that of silicon based VLSI technology.
• However, the integration of several optical components on a single
substrate is still a technological challenges.
• Since the technology of monolithic integration of electronic components
is mature, now the task is to select a suitable material, structure and
technology, which can address the challenges, faced by this new
technology and can meet the demands of communication and computing
systems.
159
OPTOELECTRONIC INTEGRATED CIRCUITS

160