DATA SHEET

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MOSFET – N-Channel, VDS RDS(on) MAX ID MAX

SUPERFET[ 600 V 380 mW @ 10 V 11 A*

*Drain current limited by maximum junction
temperature.
600 V, 11 A, 380 mW

FCP11N60, FCPF11N60 D

Description
SUPERFET MOSFET is onsemi’s first generation of high voltage G
super−junction (SJ) MOSFET family that is utilizing charge balance
technology for outstanding low on−resistance and lower gate charge S
performance. This technology is tailored to minimize conduction loss, N−Channel
provide superior switching performance, dv/dt rate and higher
avalanche energy. Consequently, SUPERFET MOSFET is very
suitable for the switching power applications such as PFC,
server/telecom power, FPD TV power, ATX power and industrial
power applications. TO−220 Fullpack, 3−Lead
G / TO−220F−3SG
D
Features S CASE 221AT

• 650 V @ TJ = 150°C
• RDS(on) = 320 mW (Typ.)
• Ultra Low Gate Charge (Typ. Qg = 40 nC)
TO−220−3LD
• Low Effective Output Capacitance (Typ. Coss(eff.) = 95 pF) G
D CASE 340AT
S
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
MARKING DIAGRAM

FCP(F)
11N60(T)
AYWWZZ

FCP(F)11N60(T) = Specific Device Code

A = Assembly Location
YWW = Date Code (Year & Week)
ZZ = Assembly Lot

ORDERING INFORMATION

Device Package Shipping

FCP11N60 TO−220−3 1000 Units / Tube
FCPF11N60 TO−220−3 1000 Units / Tube
FullPak
FCPF11N60T

© Semiconductor Components Industries, LLC, 2008 1 Publication Order Number:

January, 2024 − Rev. 3 FCPF11N60T/D
 FCP11N60, FCPF11N60

MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Symbol Parameter FCP11N60 FCPF11N60 Unit
VDSS Drain−Source Voltage 600 V
ID Drain Current − Continuous (TC = 25°C) 11 11* A
− Continuous (TC = 100°C) 7 7*
IDM Drain Current − Pulsed (Note 1) 33 33* A
VGSS Gate−Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 340 mJ
IAR Avalanche Current (Note 1) 11 A
EAR Repetitive Avalanche Energy (Note 1) 12.5 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C) 125 36 W
− Derate Above 25°C 1.0 0.29 W/°C
TJ, TSTG Operating and Storage Temperature Range −55 to +150 °C
TL Maximum Lead Temperature for Soldering Purposes, 300 °C
1/8” from Case for 5 Seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*Drain current limited by maximum junction temperature.
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. IAS = 5.5 A, VDD = 50 V, RG = 25 W, starting TJ = 25°C.
3. ISD ≤ 11 A, di/dt ≤ 200 A/ms, VDD ≤ BVDSS, starting TJ = 25°C.

THERMAL CHARACTERISTICS
Symbol Parameter FCP11N60 FCPF11N60 Unit
RqJC Thermal Resistance, Junction−to−Case 1.0 3.5 °C/W
RqCS Thermal Resistance, Case−to−Sink 0.5 − °C/W
RqJA Thermal Resistance, Junction−to−Ambient 62.5 62.5 °C/W

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 FCP11N60, FCPF11N60

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS
BVDSS Drain−Source Breakdown Voltage VGS = 0 V, ID = 250 mA, TJ = 25°C 600 − − V
VGS = 0 V, ID = 250 mA, TJ = 150°C − 650 − V

DBV DSS Breakdown Voltage Temperature ID = 250 mA, Referenced to 25°C − 0.6 − V/°C
Coefficient
DT J
BVDS Drain−Source Avalanche Breakdown VGS = 0 V, ID = 11 A − 700 − V
Voltage
IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V − − 1 mA
VDS = 480 V, TC = 125°C − − 10
IGSSF Gate−Body Leakage Current, Forward VGS = 30 V, VDS = 0 V − − 100 nA
IGSSR Gate−Body Leakage Current, Reverse VGS = −30 V, VDS = 0 V − − −100 nA
ON CHARACTERISTICS
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 mA 3.0 − 5.0 V
RDS(on) Static Drain−Source On−Resistance VGS = 10 V, ID = 5.5 A − 0.32 0.38 W
gFS Forward Transconductance VDS = 40 V, ID = 5.5 A (Note 4) − 9.7 − S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1 MHz − 1148 1490 pF
Coss Output Capacitance − 671 870 pF
Crss Reverse Transfer Capacitance − 63 82 pF
Coss Output Capacitance VDS = 480 V, VGS = 0 V, f = 1 MHz − 35 − pF
Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V − 95 − pF
SWITCHING CHARACTERISTICS
td(on) Turn−On Delay Time VDD = 300 V, ID = 11 A, RG = 25 W − 34 80 ns
(Note 4, 5)
tr Turn−On Rise Time − 98 205 ns
td(off) Turn−Off Delay Time − 119 250 ns
tf Turn−Off Fall Time − 56 120 ns
Qg Total Gate Charge VDS = 480 V, ID = 11 A, VGS = 10 V − 40 52 nC
(Note 4, 5)
Qgs Gate−Source Charge − 7.2 − nC
Qgd Gate−Drain Charge − 21 − nC
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain−Source Diode Forward Current − − 11 A
ISM Maximum Pulsed Drain−Source Diode Forward Current − − 33 A
VSD Drain−Source Diode Forward Voltage VGS = 0 V, IS = 11 A − − 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 11 A, dIF/dt = 100 A/ms − 390 − ns
(Note 4)
Qrr Reverse Recovery Charge − 5.7 − mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test : Pulse width ≤ 300 ms, Duty cycle ≤ 2%
5. Essentially independent of operating temperature

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 FCP11N60, FCPF11N60

TYPICAL PERFORMANCE CHARACTERISTICS

102
VGS

Top: 15.0 V
10.0 V
8.0 V
101
ID, Drain Current (A)

ID, Drain Current (A)

7.0 V
101 6.5 V 150°C
6.0 V
Bottom: 5.5 V 25°C

100 100
−55°C

Notes: Notes:
1. 250 ms Pulse Test 1. VDS = 40 V
10−1 2. TC = 25°C 2. 250 ms Pulse Test
10−1
10−1 100 101 2 4 6 8 10
VDS, Drain−Source Voltage (V) VGS, Gate−Source Voltage (V)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

1.0
Drain−Source On−Resistance (W)

IDR, Reverse Drain Current (A)

0.8
101
0.6
RDS(on),

VGS = 10 V
150°C
0.4 25°C
VGS = 20 V 100

0.2 Notes:
1. VGS = 0 V
Note: TJ = 25°C 2. 250 ms Pulse Test
0.0 10−1
0 5 10 15 20 25 30 35 40 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
ID, Drain Current (A) VSD, Source−Drain Voltage (V)

Figure 3. On−Resistance Variation vs. Drain Current Figure 4. Body Diode Forward Voltage Variation
and Gate Voltage vs. Source Current and Temperature

6000 12
Ciss = Cgs + Cgd (Cds = shorted) VDS = 100 V
Coss = Cds + Cgd
VGS, Gate−Source Voltage (V)

5000 Crss = Cgd VDS = 250 V

10
VDS = 400 V
Coss
Capacitance (pF)

4000 8

3000 6
Ciss Notes:
1. VGS = 0 V
2000 2. f = 1 MHz
4
Crss
1000 2
Note: ID = 11 A
0 0
10−1 100 101 0 5 10 15 20 25 30 35 40 45
VDS, Drain−Source Voltage (V) Qg, Total Gate Charge (nC)

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

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 FCP11N60, FCPF11N60

TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

1.2 3.0

Drain−Source On−Resistance
Drain−Source Breakdown Voltage

2.5

RDS(on), (Normalized)
1.1
BVDSS, (Normalized)

2.0

1.0 1.5

1.0
0.9
Notes: Notes:
0.5 1. VGS = 10 V
1. VGS = 0 V
2. ID = 250 mA 2. ID = 5.5 A
0.8 0.0
−100 −50 0 50 100 150 200 −100 −50 0 50 100 150 200
TJ, Junction Temperature (5C) TJ, Junction Temperature (5C)

Figure 7. Breakdown Voltage Variation Figure 8. On−Resistance Variation

vs. Temperature vs. Temperature

102 Operation in This Area 102 Operation in This Area

is Limited by RDS(on) is Limited by RDS(on)
100 ms
100 ms
101 101
ID, Drain Current (A)

ID, Drain Current (A)

1 ms 1 ms
10 ms 10 ms
DC 100 ms
100 100 DC

10−1 Notes: 10−1 Notes:

1. TC = 25°C 1. TC = 25°C
2. TJ = 150°C 2. TJ = 150°C
3. Single Pulse 3. Single Pulse
10−2 10−2
100 101 102 103 100 101 102 103
VDS, Drain−Source Voltage (V) VDS, Drain−Source Voltage (V)

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Safe Operating Area
for FCP11N60 for FCPF11N60

12.5

10.0
ID, Drain Current (A)

7.5

5.0

2.5

0.0
25 50 75 100 125 150
TC, Case Temperature (5C)

Figure 11. Maximum Drain Current

vs. Case Temperature

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 FCP11N60, FCPF11N60

TYPICAL PERFORMANCE CHARACTERISTICS (continued)

ZqJC(t), Thermal Response (°C/W) 100

D = 0.5

0.2 PDM

10−1 0.1
t1
0.05 t2
0.02 Notes:
0.01 1. ZqJC(t) = 1.0°C / W Max.
2. Duty Factor, D = t1 / t2
Single Pulse 3. TJM − TC = PDM x ZqJC(t)
10−2

10−5 10−4 10−3 10−2 10−1 100 101

t1, Square Wave Pulse Duration (s)

Figure 12. Transient Thermal Response Curve for FCP11N60

ZqJC(t), Thermal Response (°C/W)

D = 0.5
100
0.2
PDM
0.1
0.05 t1
10−1 0.02 t2
Notes:
0.01
1. ZqJC(t) = 3.5°C / W Max.
2. Duty Factor, D = t1 / t2
3. TJM − TC = PDM x ZqJC(t)
Single Pulse
10−2

10−5 10−4 10−3 10−2 10−1 100 101

t1, Square Wave Pulse Duration (s)

Figure 13. Transient Thermal Response Curve for FCPF11N60

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 FCP11N60, FCPF11N60

VGS
Same Type
50 kW
as DUT Qg
12 V 200 nF
300 nF
10 V
10V
VDS
VGS Qgs Qgd

DUT
3 mA

Charge

Figure 14. Gate Charge Test Circuit & Waveform

RL VDS
VDS 90%

VGS VDD
RG

10%
VGS
10
10VV DUT
td(on) tr td(off)
tf
t on t off

Figure 15. Resistive Switching Test Circuit & Waveforms

L 1 BVDSS
VDS EAS = LI AS2
2 BVDSS −VDD
BVDSS
ID
IAS
RG
VDD ID (t)

10
V V
10V DUT VDD VDS (t)

tp
tp Time

Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms

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 FCP11N60, FCPF11N60

DUT +

VDS

ISD
L

Driver
RG
Same Type
as DUT VDD

VGS
• dv/dt controlled by RG
• ISD controlled by pulse period

Gate Pulse Width

VGS D=
Gate Pulse Period 10 V
(Driver)

IFM, Body Diode Forward Current

ISD
(DUT) di/dt

IRM

Body Diode Reverse Current

VDS
(DUT) Body Diode Recovery dv/dt

VSD VDD

Body Diode Forward Voltage Drop

Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms

SUPERFET is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States
and/or other countries.

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 MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−220 Fullpack, 3−Lead / TO−220F−3SG

CASE 221AT
ISSUE B
DATE 19 JAN 2021

Scale 1:1

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON67439E Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: TO−220 FULLPACK, 3−LEAD / TO−220F−3SG PAGE 1 OF 1

onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.

© Semiconductor Components Industries, LLC, 2012 www.onsemi.com

 MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−220−3LD
CASE 340AT
ISSUE B
DATE 08 AUG 2022

GENERIC
MARKING DIAGRAM*

XXXXX
XXXXX
AYWWZZ

XXXX = Specific Device Code

A = Assembly Location
Y = Year
WW = Work Week
ZZ = Assembly Lot Code

*This information is generic. Please refer to

device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON13818G Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: TO−220−3LD PAGE 1 OF 1

onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.

 Semiconductor Components Industries, LLC, 2019 www.onsemi.com

 onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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