DMT8012LK3

Green

80V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary Features

ID max  Low RDS(ON) – ensures on state losses are minimized
BVDSS RDS(ON) max
TC = +25°C  High Conversion Efficiency
 Low Input Capacitance
17mΩ @ VGS = 10V 44A
 Fast Switching Speed
ADVANCED INFORMATION

80V
22mΩ @ VGS = 4.5V 38A  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability

Description and Applications Mechanical Data

This MOSFET is designed to minimize the on-state resistance  Case: TO252 (DPAK)
(RDS(ON)) and yet maintain superior switching performance, making it  Case Material: Molded Plastic, “Green” Molding Compound;
ideal for high-efficiency power management applications. UL Flammability Classification Rating 94V-0
 Moisture Sensitivity: Level 1 per J-STD-020
 Synchronous Rectifier  Terminal Finish - Matte Tin Annealed over Copper Leadframe;
 Backlighting Solderable per MIL-STD-202, Method 208
 Power Management Functions  Weight: 0.33 grams (Approximate)
 DC-DC Converters

TO252 (DPAK)

Top View Pin Out Top View Equivalent Circuit

Ordering Information (Note 4)

Part Number Case Packaging
DMT8012LK3-13 TO252 (DPAK) 2,500/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) complaint. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information
TO252 (DPAK)

= Manufacturer’s Marking
T8012L = Product Type Marking Code
T8012L YYWW = Date Code Marking
YY = Last Digit of Year (ex: 17 = 2017)
YYWW WW = Week Code (01 to 53)

DMT8012LK3 1 of 7 February 2017

Document number: DS37918 Rev. 3 - 2 www.diodes.com © Diodes Incorporated
 DMT8012LK3

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Units
Drain-Source Voltage VDSS 80 V
Gate-Source Voltage VGSS ±20 V
TC = +25°C 44
Continuous Drain Current (Note 5) VGS = 10V ID A
TC = +100°C 28
ADVANCED INFORMATION

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 80 A

Maximum Continuous Body Diode Forward Current (Note 5) IS 3 A
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) ISM 80 A
Avalanche Current, L=0.1mH IAS 11.6 A
Avalanche Energy, L=0.1mH EAS 10.2 mJ

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Units
Total Power Dissipation (Note 5) PD 2.7 W
Thermal Resistance, Junction to Ambient (Note 5) RθJA 47 °C/W
Total Power Dissipation (Note 6) PD 50 W
Thermal Resistance, Junction to Case (Note 6) RθJC 2.5 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS 80 - - V VGS = 0V, ID = 1mA
Zero Gate Voltage Drain Current IDSS - - 1 μA VDS = 64V, VGS = 0V
Gate-Source Leakage IGSS - - ±100 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS(TH) 1 - 3 V VDS = VGS, ID = 250μA
- 12 17 VGS = 10V, ID = 12A
Static Drain-Source On-Resistance RDS(ON) mΩ
- 18.2 22 VGS = 4.5V, ID = 6A
Diode Forward Voltage VSD - 0.9 1.2 V VGS = 0V, IS = 25A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance Ciss - 1,949 -
VDS = 40V, VGS = 0V,
Output Capacitance Coss - 177 - pF
f = 1MHz
Reverse Transfer Capacitance Crss - 10 -
Gate Resistance Rg - 0.7 - Ω VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = 4.5V) Qg - 15 -
Total Gate Charge (VGS = 10V) Qg - 34 -
nC VDS = 40V, ID = 12A
Gate-Source Charge Qgs - 6 -
Gate-Drain Charge Qgd - 4.5 -
Turn-On Delay Time tD(ON) - 4.9 -
Turn-On Rise Time tR - 3.8 - VDD = 40V, VGS = 10V,
ns
Turn-Off Delay Time tD(OFF) - 16.5 - ID = 12A, RG = 1.6Ω
Turn-Off Fall Time tF - 3.5 -
Body Diode Reverse Recovery Time tRR - 30.2 - ns
IF = 12A, di/dt = 100A/μs
Body Diode Reverse Recovery Charge Qrr - 34.6 - nC
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
6. Device mounted on infinite heat sink and measured by thermal couple attached on bottom heat sink of package.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.

DMT8012LK3 2 of 7 February 2017

Document number: DS37918 Rev. 3 - 2 www.diodes.com © Diodes Incorporated
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30.0 30
VDS= 5.0V
25.0 VGS=10.0V 25
ID, DRAIN CURRENT (A)

VGS=6.0V

ID, DRAIN CURRENT (A)

20.0 20
VGS=5.0V
VGS=4.5V
ADVANCED INFORMATION

15.0 15

VGS=4.0V
10.0 10
150℃ 85℃

5.0 25℃
5 125℃
VGS=3.5V -55℃
0.0 0
0 0.5 1 1.5 2 2.5 3 1 2 3 4 5
VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic

0.03 0.03
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

RDS(ON), DRAIN-SOURCE ON-RESISTANCE

0.03
0.025
0.02
VGS=4.5V
(mΩ)

0.02 0.02

0.01 VGS=10.0V
0.015
ID=12A
0.01

ID=6A
0.00 0.01
0 5 10 15 20 25 30 2 4 6 8 10 12 14 16 18 20

ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)

Figure 3. Typical On-Resistance vs Drain Current Figure 4. Typical Transfer Characteristic
and Gate Voltage

0.03 2.5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

RDS(ON), DRAIN-SOURCE ON-RESISTANCE

VGS=10V
2.3
150℃
0.025 2.1

1.9
(NORMALIZED)

0.02 125℃ 1.7

VGS=10V, ID=20A
1.5
85℃
0.015 1.3
25℃ 1.1
VGS=4.5V, ID=20A
0.01 0.9
-55℃
0.7

0.005 0.5
0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150

ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (℃)

Figure 5. Typical On-Resistance vs Drain Current Figure 6. On-Resistance Variation with Temperature
and Temperature
DMT8012LK3 3 of 7 February 2017
Document number: DS37918 Rev. 3 - 2 www.diodes.com © Diodes Incorporated
 DMT8012LK3

RDS(ON), DRAIN-SOURCE ON-ESISTANCE (Ω) 0.04 3.5

VGS(TH), GATE THESHOLD VOLTAGE (V)

3
0.03
2.5 ID=1mA

VGS=4.5V, ID=20A
ADVANCED INFORMATION

0.02 2
ID=250µA
1.5
0.01 VGS=10V, ID=20A
1

0 0.5
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Figure 8. Gate Theshold Variation vs Temperature
Temperature

30 10000
VGS=0V f=1MHz
CT, JUNCTION CAPACITANCE (pF)

25
Ciss
IS, SOURCE CURRENT (A)

1000
20
Coss
15 100

Crss
10
TA=85℃ 10
TA=150℃
5 TA=25℃
TA=125℃
TA=-55℃
0 1
0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30 35 40

VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 9. Diode Forward Voltage vs Current Figure 10. Typical Junction Capacitance

10 100
R DS(on)
Limited
9 PW = 10µs

8 PW = 1µs
I D, DRAIN CURRENT (A)

PW = 1s
7 10
PW = 100ms
VGS (V)

6
PW = 10ms
5
PW = 1ms
4 VDS=40V, ID=12A
PW = 100µs
1
3

2 T J(ma x) = 150°C
T A = 25°C
VGS = 10V
1 Single Pulse
DUT on 1 * MRP Board
0 0.1
0 5 10 15 20 25 30 35 0.1 1 10 100 1,000
Qg (nC) V DS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Gate Charge Figure 12 SOA, Safe Operation Area

DMT8012LK3 4 of 7 February 2017

Document number: DS37918 Rev. 3 - 2 www.diodes.com © Diodes Incorporated
 DMT8012LK3

r(t), TRANSIENT THERMAL RESISTANCE

D=0.9
D=0.7
D=0.5
0.1 D=0.3
ADVANCED INFORMATION

D=0.1

D=0.05

D=0.02
0.01
D=0.01

D=0.005
RθJC(t)=r(t) * RθJC
RθJC=2.48℃/W
D=Single Pulse Duty Cycle, D=t1 / t2

0.001
1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10

t1, PULSE DURATION TIME (sec)

Figure 13. Transient Thermal Resistance

DMT8012LK3 5 of 7 February 2017

Document number: DS37918 Rev. 3 - 2 www.diodes.com © Diodes Incorporated
 DMT8012LK3

Package Outline Dimensions

Please see http://www.diodes.com/package-outlines.html for the latest version.

E
A
b3
ADVANCED INFORMATION

7°±1°
c
L3
TO252 (DPAK)
Dim Min Max Typ
A 2.19 2.39 2.29
D
A1 0.00 0.13 0.08
A2 A2 0.97 1.17 1.07
H
L4
b 0.64 0.88 0.783
b2 0.76 1.14 0.95
b3 5.21 5.46 5.33
c 0.45 0.58 0.531
D 6.00 6.20 6.10
e D1 5.21 - -
b(3x)
e - - 2.286
b2(2x) E 6.45 6.70 6.58
0.508 E1 4.32 - -
Gauge Plane H 9.40 10.41 9.91
L 1.40 1.78 1.59
D1 Seating Plane L3 0.88 1.27 1.08
E1
L4 0.64 1.02 0.83
L
a

A1 a 0° 10° -
2.74REF All Dimensions in mm

Suggested Pad Layout

Please see http://www.diodes.com/package-outlines.html for the latest version.

X1

Y1

Dimensions Value (in mm)

Y2 C 4.572
X 1.060
C
X1 5.632
Y 2.600
Y1 5.700
Y Y2 10.700

DMT8012LK3 6 of 7 February 2017

Document number: DS37918 Rev. 3 - 2 www.diodes.com © Diodes Incorporated
 DMT8012LK3

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Copyright © 2017, Diodes Incorporated

www.diodes.com

DMT8012LK3 7 of 7 February 2017

Document number: DS37918 Rev. 3 - 2 www.diodes.com © Diodes Incorporated