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Unit 10 - Electronics (Practice Sheet)

The document contains a series of multiple-choice questions related to physics topics for the MDCAT and ECAT entry tests in 2024, specifically focusing on electronics. Each question presents four options, with only one correct answer, covering concepts such as semiconductor behavior, rectification processes, and diode characteristics. The questions aim to assess the understanding of fundamental electronics principles necessary for the entry tests.

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Mahar Ahmad
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0% found this document useful (0 votes)
3 views2 pages

Unit 10 - Electronics (Practice Sheet)

The document contains a series of multiple-choice questions related to physics topics for the MDCAT and ECAT entry tests in 2024, specifically focusing on electronics. Each question presents four options, with only one correct answer, covering concepts such as semiconductor behavior, rectification processes, and diode characteristics. The questions aim to assess the understanding of fundamental electronics principles necessary for the entry tests.

Uploaded by

Mahar Ahmad
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Aims above

MDCAT & ECAT the Sky!


2024
ENTRY TEST’S PHYSICS
 MDCAT – Physics Topic: 10
ELECTRONICS
(DPP SHEET - 01)
DIRECTIONS: Choose the correct option. Each question has 4 choices (a), (b), (c) and (d), out of which ONLY ONE is correct.
1. When the temperature of semiconductor suddenly drops to zero kelvin, then a semiconductor acts as:
a) Conductor b) Semi-conductor c) Super conductor d) Insulator
2. Output current of a half wave rectifier is:
a) AC Current b) Unidirectional current
c) Zero always d) Straight line parallel to time axis
3. The resistance of full wave rectifier is:
a) Less than the resistance of half wave rectifier
b) More than the resistance of half wave rectifier
c) Equal to the resistance of half wave rectifier
d) Negligible in comparison to the resistance of half wave rectifier
4. When AC is converted to DC, the process is:
a) Magnification b) Amplification c) Rectification d) Resolution
5. A process in which only one half of alternating current is converted into direct current , is called:
a) Full wave rectification b) Half wave rectification
c) Amplification d) Magnification
6. A D.C. battery of V volt is connected to a series combination of a resistor R and an ideal diode D as shown in the
figure below. The potential difference across R will be:

a) 2V when diode is forward biased b) zero when diode is forward biased


c) V when diode is reverse biased d) V when diode is forward biased
7. Efficiency of full wave rectifier circuit is almost than half wave rectifier circuit:
a) Four times b) Same as c) Sixteen times d) Double
8. The conversion of Alternating current into Direct Current is called rectification and the circuit is called rectifier.
Which component of electronics acts as a rectifier?
a) Diode b) Transistor c) Transformer d) Inductor
9. The potential difference applied across a diode to reduce depletion layer is
a) Reverse biasing b) Forward biasing c) Biasing voltage d) Junction potential
10. A pure semiconductor:
a) Has low resistance. b) is an intrinsic semiconductor.
c) Allows inadequate current to pass through it. d) is an extrinsic semiconductor.
11. The intrinsic semiconductor becomes an insulator at:
a) 0o C b) −100o C c) 300 K d) 0 K
12. When arsenic is added as an impurity to silicon, the resulting material is:
a) n-type conductor b) n-type semiconductor
c) p-type conductor d) p-type semiconductor
13. In a p-n junction having depletion layer of thickness 10−6 m the potential across it is 0.1 V. The electric field is
a) 107 V/m b) 10–6 V/m c) 105 V/m d) 10–5 V/m
14. When the voltage drop across a p-n junction diode is increased from 0.8 V to 0.70 V, the change in the diode
current is 5 mA. The dynamic resistance of the diode is:
a) 20 Ω b) 10 Ω c) 5 Ω d) 100 Ω
15. Of the diodes shown in the following diagrams, which one is reverse biased?

a) b)

c) d)
16. In a reverse biased diode when the applied voltage changes by 1 V, the current is found to change by 0.5 µA. The
reverse bias resistance of the diode is:
One Shot Lecture: Complete Electronics - https://youtu.be/krfaYZfOxsA Page 1
a) 2 × 105 Ω b) 2 × 106 Ω c) 200 Ω d) 2 Ω
17. The peak voltage in the output of a half wave diode rectifier fed with a sinusoidal signal without filter is 10 V. The
D.C. component of the output voltage is:
a) 20/π V b) 10/π V c) 10/2π V d) 10 V
18. In the half wave rectifier circuit operating from 50 Hz mains frequency, the fundamental frequency in the ripple
would be:
a) 25 Hz b) 50 Hz c) 70.7 Hz d) 100 Hz
19. If the forward bias on p-n junction is increased from zero to 0.045 V, then no current flows in the circuit. The
contact potential of junction i.e. VB is:
a) Zero b) 0.045 V c) more than 0.045 V d) less than 0.045 V
20. In general maximum rectification efficiency for a half wave rectifier is:
a) 40.6 % b) 59.8 % c) 73.1 % d) 85 %
21. In the middle of the depletion layer of a reverse biased p-n junction, the:
a) Potential is zero b) Electric field is zero
c) Potential is maximum d) Electric field is maximum
22. A solar cell is a p-n junction operating in:
a) Reverse bias condition b) Unbiased condition
c) Forward bias condition d) In both forward and reverse bias condition
23. The current through an ideal p-n junction shown in the following circuit diagram will be:

a) Zero b) 1 mA c) 10 mA d) 30 mA
24. The breakdown in a reverse biased p-n junction diode is more likely to occur due to:
a) Large velocity of the minority charge carriers if the doping concentration is small
b) Large velocity of the minority charge carriers if the doping concentration is large
c) Strong electric field in a depletion region if the doping concentration is small
d) None of these
25. Hole is:
a) An anti-particle of electron b) vacancy created when electron leaves covalent bond.
c) Absence of free electrons. d) an artificially created particle.
26. In figure, assuming the diodes to be ideal:

a) D1, is forward biased and D2 is reverse biased and hence current flows from A to B.
b) D2 is forward biased and D1 is reverse biased and hence no current flows from B to A and vice versa.
c) D1 and D2 are both forward biased and hence current flows from A to B.
d) D1 and D2 are both reverse biased and hence no current flows from A to B and vice versa.
27. In bridge rectifier circuit, (see fig.), the input signal should be connected between:

a) A and D b) B and C c) A and C d) B and D


28. Output voltage of rectifier is not smooth, it can be made smooth by circuit known as:
a) Wheatstone circuit b) Filter circuit c) Bridge circuit d) Ripple circuit
29. What happens in positive cycle of AC input?

a) D1 and D3 conduct b) D3 and D4 conduct


c) D1 and D2 conduct d) D2 and D4 conduct

“Hard Work Beats the Talent, When Talent doesn’t Work Hard.”

One Shot Lecture: Complete Electronics - https://youtu.be/krfaYZfOxsA Page 2

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