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UNIT III SEMICONDUCTOR DEVICES AND APPLICATIONS

SEMICONDUCTOR DEVICES AND APPLICATIONS

Prerequisites

The semiconductor device i.e., solid state device is capable of amplifying

the weak signal. The devices are solid rather than hollow like the vaccum tube.
These semiconductor devices are smaller in size, more rugged and less power
consumption than vaccum tubes. The various semiconductor devices include
semiconductor diode, Zener diode, transistor, JFET, MOSFET, UJT, SCR, DIAC
and TRIAC etc. The semiconductor devices have very wide range of applications

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in various fields such as communication systems, medical electronics,
microprocessor based systems, instrumentation, process control, aerospace,

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INTRODUCTION
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Basic Definitions
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Valence electrons
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The electrons present in the outer most orbit that are loosely bound to the
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nucleus are called valence electrons.

Conduction electrons

When an electric field is applied, the valence electrons get detached

themselves from the nucleus, constituting the flow of current. These electrons are
called conduction electrons.

Energy band

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The (range of) energy possessed by the electrons in an atom is called

energy band.

Conduction band

The (range of) energy possessed by the conduction electrons is called

conduction band.

Valence electrons

The (range of) energy possessed by the valence electrons is called valence

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band.

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Forbidden energy gap
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The gap between the valence band and the conduction band is called
forbidden energy gap.
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CLASSIFICATION OF MATERIALS
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The materials are classified based on their conducting property. Energy

band theory can be used to explain the classification of materials.
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1 Conductors

Conductor is materials that easily conducts or pass the current. There are
plenty of free electrons available for electric conduction. In terms of energy band
theory, the conductors have overlapping of valence band and conductive band.

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Example: Copper, Aluminum, iron, etc

Properties: 1. It is rigid, non directional and crystalline in nature.

2. Conductivity is good.

3. Low melting and boiling temperatures.

2 Semiconductors

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Semiconductor is a material with partially filled conduction band and
valence band. The current in the semiconductor is due to the movement of
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electrons and holes. As the temperature increases the conduction increases.
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Example: Silicon, Germanium, etc.

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Properties: 1. It is rigid, directional and crystalline in nature.

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2. Conductivity can be increased if proper doping material is

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added.
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3. Low melting and boiling temperatures.

2 Insulators

In the case of insulators, the valence electrons are very tightly bound to their
parent atom. The valence band and conduction band are separated by a large
forbidden energy gap. The insulators have full valence band and an empty
conduction band.

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Example: Paper, Mica. Sodium chloride, etc.

Properties: 1. It is rigid, Unidirectional and crystalline in nature.

2. Conductivity is poor in the solid form.

3. High melting and boiling temperatures.

Energy band structure

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Comparison of Conductors,Semiconductors and Insulators

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Classification of Semiconductor
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Intrinsic Semiconductor

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An intrinsic semiconductor also called an undoped semiconductor or i- type

semiconductor.

It is a pure semiconductor without any significant dopant species present.

The number of charge carriers determined by the properties of the m aterial itself
instead of the amount of impurities.

In intrinsic semiconductors the number of excited electrons and the number of

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holes are equal: n = p.

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Conductivity of Intrinsic semiconductor

 The electrical conductivity of intrinsic semiconductors can be due to crystal
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defects or to thermal excitation.

 Both electrons and holes contribute to current flow in an intrinsic
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semiconductor.
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 The current which will flow in an intrinsic semiconductor consists of both

electron and hole current.
 That is, the electrons which have been freed from their lattice positions into
the conduction band can move through the material.
 In addition, other electrons can hop between lattice positions to fill the
vacancies left by the freed electrons.
 This additional mechanism is called hole conduction because it is as if
the holes are migrating across the material in the direction opposite to the free
electron movement.
 The current flow in an intrinsic semiconductor is influenced by the density of
energy states which in turn influences the electron density in the conduction band.

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 This current is highly temperature dependent.

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Thermal excitation:
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 In an intrinsic semiconductor like silicon at temperatures above absolute

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zero, there will be some electrons which are excited across the band gap into the
conduction band and which can produce current.
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 When the electron in pure silicon crosses the gap, it leaves behind an
electron vacancy or "hole" in the regular silicon lattice.
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 Under the influence of an external voltage, both the electron and the hole
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can move across the material.

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 In n-type semiconductor:
The dopant contributes extra electrons, dramatically increasing the conductivity
 In p-type semiconductor:
The dopant produces extra vacancies or holes, which likewise increase the
conductivity.

Extrinsic Semiconductor

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 The electrical conductivity of a pure semiconductor is very small.

 To increase the conductivity, impurities are added.
 The impurity added semiconductor is called extrinsic semiconductor.
 The process of adding impurity is called doping.
 The added impurity is called dopant.
 Usually one or two atoms of impurity is added per 106 atoms of a
semiconductor.
 There are two types (i) p-type and (ii) n-type semiconductors.

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 When an impurity, from V group elements like arsenic (As), antimony having
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5 valence electrons is added to Ge (or Si), the impurity atom donates one electron
to Ge (or Si).
 The 4 electrons of the impurity atom is engaged in covalent bonding with
Si atom.
 The fifth electron is free. This increases the conductivity.
 The impurities are called donors.
 The impurity added semiconductor is called n-type semiconductor, because
their increased conductivity is due to the presence of the negatively charged
electrons, which are called the majority carriers.

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 The energy band of the electrons donated by the impurity atoms is just
below the conduction band.
 The electrons absorb thermal energy and occupy the conduction band.
 Due to the breaking of covalent bond, there will be a few holes in the valence
band at this temperature.
 These holes in n-type are called minority carriers.

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 If a III group element, like indium (In), boron (B), aluminium (AI) etc., having
three valence electrons, is added to a semiconductor say Si, the three electrons
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form covalent bond.

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 There is a deficiency of one electron to complete the 4th covalent bond and is
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called a hole.The presence of the hole increases the conductivity because these
holes move to the nearby atom, at the same time the electrons move in the
opposite direction.
 The impurities added semiconductor is called p-type semiconductor.
 The impurities are called acceptors as they accept electrons from the
semiconductor
 Holes are the majority carriers and the electrons produced by the breaking of
bonds are the minority carriers.
PN JUNCTION DIODE

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
A p–n junction is formed by joining P-type and N-type semiconductors
together in very close contact.


The term junction refers to the boundary interface where the two regions of
the semiconductor meet.


Diode is a two-terminal electronic component that conducts electric current
in only one direction.


The crystal conducts conventional current in a direction from the p-type side
(called the anode) to the n-type side (called the cathode), but not in the
opposite direction.

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Symbol of PN junction diode
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1Biasing

“Biasing” is providing minimum external voltage and current to activate

the device to study its characteristics.

There are two operating regions and two "biasing" conditions for the standard
Junction Diode and they are:

Zero Bias:

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When a diode is Zero Biased no external energy source is applied and a
natural Potential Barrier is developed across a depletion layer.
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(i) Forward Bias:
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
When the positive terminal of a battery is connected to P-type
semiconductor and negative terminal to N-type is known asforward
bias of PN junction.



The applied forward potential establishes an electric field opposite to the
potential barrier. Therefore the potential barrier is reduced at the junction.
As the potential barrier is very small (0.3V for Ge and 0.7V for Si),a small
forward voltage is sufficient to completely eliminate the barrier potential,
thus the junction resistance becomes zero.

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
In otherwords, the applied positive potential repels the holes in the ‘P’
region so that the holes moves towards the junction and applied negative
potential repels the electrons in the ‘N’ region towards the junction results
in depletion region starts decreasing. When the applied potential is more
than the internal barrier potential then the depletion region completely
disappear, thus the junction resistance becomes zero.



Once the potential barrier is eliminated by a forward voltage, j unction
establishes the low resistance path for the entire circuit, thus a current flows
in the circuit, it is called as forward current.

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(ii)Reverse Bias:

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
For reverse bias, the negative terminal is connected to P-type semiconductor
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and positive terminal to N type semiconductor.

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
When reverse bias voltage is applied to the junction, all the majority carriers
of ‘P’ region are attracted towards the negative terminal of the battery and
the majority carriers of the N region attracted towards the positive terminal
of the battery, hence the depletion region increases.



The applied reverse voltage establishes an electric field which acts in the
same direction of the potential barrier. Therefore, the resultant field at the
junction is strengthened and the barrier width is increased. This increased
potential barrier prevents the flow of charge carriers across the junction,
results in a high resistance path.
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
This process cannot continue indefinitely because after certain extent the
junction break down occurs. As a result a small amount of current flows
through it due to minority carriers. This current is known as “reverse
saturation current”.


V-I characteristics of PN junction diode

Forward Bias:


The application of a forward biasing voltage on the junction diode results
in the depletion layer becoming very thin and narrow which represents a
low impedance path through the junction thereby allowing high currents

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to flow.

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


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The point at which this sudden increase in current takes place is represented
on the static I-V characteristics curve above as the "knee" point.
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Reverse Bias:
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
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In Reverse biasing voltage a high resistance value to the PN junction and

practically zero current flows through the junction diode with an increase
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in bias voltage.



However, a very small leakage current does flow through the junction which
can be measured in microamperes, (μA).



One final point, if the reverse bias voltage Vr applied to the diode is
increased to a

sufficiently high enough value, it will cause the PN junction to overheat

and fail due to

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the avalanche effect around the junction.


This may cause the diode to become shorted and will result in the flow of
maximum circuit current, and this shown as a step downward slope in the
reverse static characteristics curve below.

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ZENER EFFECT
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
In a general purpose PN diode the doping is light; as a result of this the
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breakdown voltage is high. If a P and N region are heavily doped then the
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breakdown voltage can be reduced.




When the doping is heavy, even the reverse voltage is low, the electric field
at barrier will be so strong thus the electrons in the covalent bonds can
break away from the bonds. This effect is known as Zener effect.


ZENER DIODE

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
A diode which exhibits the zener effect is called a Zener Diode. Hence it is
defined as a reverse biased heavily doped PN junction diode which
operates in breakdown region. The zener diodes have been designed to
operate at voltages ranging from a few volts to several hundred volts.
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
Zener Breakdown occurs in junctions which is heavily doped and have

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narrow depletion layers. The breakdown voltage sets up a very strong
electric field. This field is so strong enough to break or rupture the covalent

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bonds thereby generating electron hole pairs.
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
Even a small reverse voltage is capable of producing large number of current
carrier. When a zener diode is operated in the breakdown region care must
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be taken to see that the power dissipation across the junction is within the
power rating of the diode otherwise heavy current flowing through the
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diode may destroy it.

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V-I characteristics of Zener diode

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
The illustration above shows this phenomenon in a current vs voltage graph
with a zener diode connected in the forward direction .It behaves exactly
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as a standard diode.

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
In the reverse direction however there is a very small leakage curre
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nt between 0v
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and the zener voltage –i.e. just a tiny amount of current is able to flow.


Then, when the voltage reaches the breakdown voltage (vz),suddenly
current can flow freely through it.


Application of Zener diode

a) as voltage regulator

b) as peak clippers

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c) for reshaping waveforms

RECTIFIERS

The “rectifier” is a circuit that converts AC voltages and currents into

pulsating DC voltages and currents. It consists of DC components and the
unwanted ac ripple or harmonic components which can be removed by using filter
circuit. Thus the output obtained will be steady DC voltage and magnitude of DC
voltage can be varied by varying the magnitude of AC voltage.

Filters: A circuit that removes ripples (unwanted ac components) present

in the pulsating dc voltage.

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Regulator: A circuit that maintains the terminal voltage as constant even
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if the input voltage or load current varying.
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Types of rectifiers:
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Rectifiers are grouped into two categories depending on the period of

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conduction.
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(a)Half wave rectifier (b) Full wave rectifier

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Half wave Rectifier:

Principle

It is a circuit that converts alternating voltage or current into pulsating

voltage or current for half the period of input cycle hence it is named as “half
wave rectifier”.

Construction

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
It consists of step-down transformer, semiconductor diode and the load
resistance.



The step-down transformer – reduce the available ac voltage into required
level of smaller ac voltage.



The diode can be used to convert the ac into pulsating dc.

Operation


During the positive half cycle of input, the diode D is forward biased, it

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offers very small resistance and it acts as closed switch and hence conducts
the current through the load resistor.

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During the negative half cycle of the input diode D is heavily reverse biased,
it offers very high resistance and it acts as open switch hence it does not
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conduct any current. The rectified output voltage will be in phase with AC
input voltage for completely resistive load.
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Full wave Rectifier:

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Principle

A circuit that converts the ac voltage or current into pulsating voltage or

current during both half cycle of input is known as “full wave rectifier”.

Operation

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
During positive half cycle of ac input, diode D1 becomes forward
biased, provides very small resistance and acts as closed switch,
resulting in the flow of current.


During negative half cycle, diode D1 reverse biased, offers high
resistance and it acts as open circuit.

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Voltage Regulation:

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Ratio of Difference of secondary voltage to Primary voltage

to secondary voltage.
BIPOLAR JUNCTION TRANSISTOR


A bipolar junction transistor is a three terminal semiconductor device in
which the operation depends on the interaction of majority and minority
carriers.



Transistor refers to Transfer Resistor i.e., signals are transferred from low
resistance circuit into high resistance circuit.



BJT consists of silicon crystal in which a layer of ‘N’ type silicon is

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sandwiched between two layers of ‘P’ type silicon. The semiconductor

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sandwiched is extremely smaller in size.
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
In other words, it consists of two back to back PN junction joined together
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to form single piece of semiconductor crystal. These two junctions gives

three region called Emitter, Base and Collector.
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
There are two types of transistors such as PNP and NPN. The arrow on the
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emitter specifies whether the transistor is PNP or NPN type and also
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determines the direction of flow of current, when the emitter base junction
is forward biased.
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Emitter: It is more heavily doped than any of the other region because its main
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function is to supply majority charge carriers to the base.

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Base: It forms the middle section of the transistor. It is very thin as compared to
either the emitter or collector and is very lightly doped.

Collector: Its main function is to collect the majority charge carriers coming from
the emitter and passing through the base. In most transistors, collector region is
made physically larger than the emitter because it has to dissipate much greater
power.

Operation of Transistor

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
The basic operation will be described using the pnp transistor. The operation
of the pnp transistor is exactly the same if the roles played by the electron
and hole are interchanged.



One p-n junction of a transistor is reverse-biased, whereas the other is
forward-biased.



Both biasing potentials have been applied to a pnp transistor and resulting
majority and minority carrier flows indicated.

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
Majority carriers (+) will diffuse across the forward-biased p-n junction into
the n-type material.



A very small number of carriers (+) will through n-type material to the base
terminal. Resulting IB is typically in order of microamperes.



The large number of majority carriers will diffuse across the reverse-biased
junction into the p-type material connected to the collector terminal.



Majority carriers can cross the reverse-biased junction because the injected
majority carriers will appear as minority carriers in the n-type material.

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
Applying KCL to the transistor :

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IE = IC + IB
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The comprises of two components – the majority and minority carriers
IC = ICmajority + ICOminority
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
ICO – IC current with emitter terminal open and is called leakage current.
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Common Base configuration


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Common-base terminology is derived from the fact that the :



- base is common to both input and output of the configuration.

- base is usually the terminal closest to or at ground potential.


All current directions will refer to conventional (hole) flow and the arrows
in all electronic symbols have a direction defined by this convention.


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
Note that the applied biasing (voltage sources) are such as to establish
current in the direction indicated for each branch.

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To describe the behavior of common-base amplifiers requires two set of
characteristics: o Input or driving point characteristics.
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o Output or collector characteristics

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The output characteristics has 3 basic regions:
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o Active region –defined by the biasing arrangements

o Cutoff region – region where the collector current is 0A

o Saturation region- region of the characteristics to the left of VCB = 0V

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
The curves (output characteristics) clearly indicate that a first approximation
to the relationship between IE and IC in the active region is given by

IC ≈IE


Once a transistor is in the ‘on’ state, the base-emitter voltage will be
assumed to be
VBE = 0.7V

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
In the dc mode the level of IC and IE due to the majority carriers are related
by a quantity called alpha
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α = IC / IE
IC = α IE + ICBO

It can then be summarize to IC = αIE (ignore ICBO due to small value)



For ac situations where the point of operation moves on the characteristics
curve, an ac alpha defined by

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
Alpha a common base current gain factor that shows the efficiency by
calculating the current percent from current flow from emitter to collector.
The value of is typical from
0.9 ~ 0.998.

Common Emitter configuration


It is called common-emitter configuration since :
o emitter is common or reference to both input and output terminals.

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o emitter is usually the terminal closest to or at ground potential.

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Almost amplifier design is using connection of CE due to the high gain for
current and voltage.
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
Two set of characteristics are necessary to describe the behavior for CE;
input (base terminal) and output (collector terminal) parameters.
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Input characteristics for CE configuration

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
IB in microamperes compared to milliamperes of IC.



IB will flow when VBE > 0.7V for silicon and 0.3V for germanium



Before this value IB is very small and no IB.



Base-emitter junction is forward bias
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
Increasing VCE will reduce IB for different values.

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Output characteristics for CE configuration

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For small VCE (VCE < VCESAT, IC increase linearly with increasing of VCE
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
VCE > VCESAT IC not totally depends on VCE -- > constant IC



IB(uA) is very small compare to IC (mA). Small increase in IB cause big
increase in IC



IB=0 A -- > ICEO occur.



Noticing the value when IC=0A. There is still some value of current flows.

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Common Collector configuration


Also called emitter-follower (EF).



It is called common-emitter configuration since both the

o signal source and the load share the collector terminal as a common
connection point.

The output voltage is obtained at emitter terminal.


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
The input characteristic of common-collector configuration is similar with
common-emitter. configuration.



Common-collector circuit configuration is provided with the load resistor
connected from emitter to ground.


It is used primarily for impedance-matching purpose since it has high input
impedance and low output impedance.

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
For the common-collector configuration, the output characteristics
are a plot of IE vs VCE for a range of values of IB.

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Small Signal Amplifier

When the input signal is so weak as to produce small fluctuations in the

collector current compared to its quiescent value, the amplifier is known as Small
Signal Amplifier.

In other words, as the name indicates, the input applied to the circuit is V in <<
Vth. It has only one amplifying device.

Α = IC / IE

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IC = α IE + ICBO pz
Voltage and current equation for hybrid parameters:
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V1 = h11i1 + h12V2
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I2 = h21i1 + h22V2
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The values of h-parameters:

h11 = V1/ i1

h12 = V1 / V2

h21 = i2 / i1

h22 = i2 / V2

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