AGNI COLLEGE OF TECHNOLOGY

(An AUTONOMOUS Institution)

(Approved by AICTE/UGC, Accredited by NBA, New Delhi, Affiliated to Anna university, ISO 9001:2008 Certified Institution),
OMR Thalambur, Chennai-600130.

DEPARTMENT OF ELECTRICAL & ELECTRONICS ENGINEERING

Academic year: 2024-2025 Odd Semester

(Regulation 2021)

LAB RECORD

NAME :

REGISTER NUMBER :
BRANCH /SECTION :
SEMESTER :

SUBJECT CODE :
SUBJECT :
 AGNI COLLEGE OF TECHNOLOGY
(An AUTONOMOUS Institution)
(Approved by AICTE/UGC, Accredited by NBA, New Delhi, Affiliated to Anna university, ISO 9001:2008 Certified Institution),
OMR Thalambur, Chennai-600130.

DEPARTMENT OF EEE

Bonafide Certificate
Certified that this is a Bonafide Record of Practical work done by Mr./Ms.
………………………………………… of .... Semester, Electrical and Electronics
Engineering Branch in ................................................... Laboratory during the academic
year 2023-24 Even semester.

Signature of the Lab In-charge Signature of the HOD/ECE

Submitted for the Practical Examination held at Agni College of Technology, Thalambur on
…………….…….

Internal Examiner External Examiner

EE3511 POWER ELECTRONICS LABORATORY DEPARTMENT of EEE 2024-2025

INDEX
Name of the Lab: EE3511 Power Electronics Lab
Name of the Staff: Ms. Soundara Bala Suppuraj

S. No Date Name of the Experiment Page Mark Staff

No sign
1. a. Characteristics of SCR
b. Characteristics of TRIAC
2. a. Characteristics of MOSFET
b. Characteristics of IGBT
3. Single phase Half controlled converter

4. Single phase Fully controlled converter

5. Step down and step up MOSFET based choppers
6. IGBT based single-phase PWM inverter
7. IGBT based three-phase PWM inverter
8. Single phase AC Voltage controller using SCR with R
Load
9.a Simulation of Single-phase half-controlled bridge rectifier
with R load
9.b Simulation of Single phase fully controlled bridge
rectifier with R load
9.c Simulation of Three phase half-controlled bridge rectifier
with R load
9.d Simulation of Three phase fully controlled bridge rectifier
with R load
9.e Simulation of Single-phase half wave AC Voltage
Controller with R load
9.f Simulation of Single-phase full wave AC Voltage
Controller with R load
Simulation of Three phase full wave AC Voltage
9.g
Controller with R load
9.h Simulation of step-down chopper with R load
10. Switched Mode Power Converters

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ANNA UNIVERSITY SYLLABUS

E3511 POWER ELECTRONICS LABORATORY L T P C

0 0 3 1.5
COURSE OBJECTIVES:
• To study the VI characteristics of SCR, TRIAC, MOSFET and IGBT.
• To analyze the performance of semi converter, full converter, step up, step down choppers
by simulation and experimentation.
• To study the behavior of voltage waveforms of PWM inverter applying various
modulation techniques.
• To design and analyze the performance of SMPS.
• To study the performance of AC voltage controller by simulation and Experimentation.

LIST OF EXPERIMENTS:
1. Characteristics of SCR and TRIAC.
2. Characteristics of MOSFET and IGBT.
3. AC to DC half controlled converter.
4. AC to DC fully controlled converter.
5. Step down and step up MOSFET based choppers.
6. IGBT based single phase PWM inverter.
7. IGBT based three phase PWM inverter.
8. AC Voltage controller.
9. Switched mode power converter.
10. Simulation of PE circuits (1Φ & 3Φ semi converter, 1Φ & 3Φ full converter,
dc-dc converters, ac voltage controllers).
TOTAL :45 PERIODS
COURSE OUTCOMES:
Upon the successful completion of the course, students will be able to:
CO1: Determine the characteristics of SCR, IGBT, TRIAC, MOSFET and IGBT

CO2: Find the transfer characteristics of full converter, semi converter, step up and step
down choppers by simulation experimentation.
CO3: Analyze the voltage waveforms for PWM inverter using various modulation techniques.
CO4: Design and experimentally verify the performance of basic DC/DC converter
topologies used for SMPS.
CO5: Understand the performance of AC voltage controllers by simulation and experimentation

MAPPING OF COs WITH POs AND PSOs

COs POs PSOs

PO1 PO2 PO3 PO4 PO5 PO6 PO7 PO8 PO9 PO10 PO11 PO12 PSO1 PSO2 PSO3
CO1 3 3 3 3 3 - - 1.5 - - - 3 3 3 3
CO2 3 3 3 3 3 - - 1.5 - - - 3 3 3 3
CO3 3 3 3 3 3 - - 1.5 - - - 3 3 3 3
CO4 3 3 3 3 3 - - 1.5 - - - 3 3 3 3
CO5 3 3 3 3 3 - - 1.5 - - - 3 3 3 3
Avg 3 3 3 3 3 - - 1.5 - - - 3 3 3 3

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LIST OF EXPERIMENTS

S. No Name of the Experiment

c. Characteristics of SCR
1. d. Characteristics of TRIAC
c. Characteristics of MOSFET
2. d. Characteristics of IGBT

3. Single phase Half controlled converter

4. Single phase Fully controlled converter
5. Step down and step up MOSFET based choppers
6. IGBT based single-phase PWM inverter
7. IGBT based three-phase PWM inverter
8. Single phase AC Voltage controller using SCR with RLoad

9.a Simulation of Single-phase half-controlled bridge rectifierwith R load

9.b Simulation of Single phase fully controlled bridgerectifier with R

load
9.c Simulation of Three phase half-controlled bridge rectifierwith R load

9.d Simulation of Three phase fully controlled bridge rectifierwith R load

Simulation of Single-phase half wave AC VoltageController with
9.e
R load
9.f Simulation of Single-phase full wave AC VoltageController with
R load
Simulation of Three phase full wave AC VoltageController with
9.g R load
9.h Simulation of step-down chopper with R load
10. Switched Mode Power Converters

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Ex. No:1.a Date:

CHARACTERISTICS OF SCR
AIM:
To study the V-I characteristics of SCR by gate triggering.

APPARATUS REQUIRED:
S.NO Instruments/Equipment Range Specifications Quantity
1. Firing circuit module - - 1
2. Voltmeter (0-50V) MC 1
3. Ammeter (0-500mA), (0-25mA) MC 1
4. Patch Chords - - -

THEORY:
A thyristor is four-layer semiconductor device of PNPN structure with three junctions. It has
three terminals namely anode, cathode and gate.
When anode (A) is made positive with respect to the cathode (K) the junctions J 1 and J3 are
forward biased and J2 is reverse biased. A small leakage current known as off-state current flows from
anode to cathode. The SCR is said to be in forward-blocking or off-state condition. If the anode to
cathode voltage Vak is increased to a sufficiently large value, the reverse biased junction J 2 will break.
This is known as avalanche breakdown and the corresponding voltage is called forward break-over
voltage VBO. Since the other junctions J1 and J3 are already forward biased, there will be freemovement
of carriers across all three junctions, Resulting in a large forward current. The device is said to be in a
conducting state or on-state. The voltage drop would be due to the ohmic drop in the layers and is about
1V, in the on-state, the anode current is limited by an external impendence.
The anode current must be more than a value known as latching current IL, in order to maintain
the required amount of carrier flow across the junctions. Otherwise the device will revert to the blocking
condition as the anode to cathode voltage is reduced. Latching current is the minimum value of the anode
current required to maintain the SCR in the on-state immediately after the SCR has been turned ON and
the gate signal has been removed.
Once an SCR conducts, it behaves like a conducting diode and there is no control over the
device. However if the forward anode current id reduced below a level known as the holding current IL1,
a depletion region will develop around junction J2 due to reduced number of carriers and the SCR mill
amperes and is less than Latching current IL. Holding current IH is the minimum anode current to
maintain the SCR in the ON state
When the cathode voltage is positive with respect to the anode, the junction J2 is forward biased,
but junctions J1 and J3 are reversed biased. This is like two series connected diodes with reverse voltage
across them turned ON by a gating signal and its anode current is greater than the holding current, the
device continues to conduct due to positive feedback even if the gating signal is removed.
CIRCUIT DIAGRAM:

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PROCEDURE:
CHARACTERISTICS:
1. Make the connections as per given in the circuit diagram.
2. Switch ON the main supply and initially keep V1 & V2 at zero voltage position & R1 in
minimum position.
3. Adjust IG=IG1 say 5mA by varying V2 or gate current potentiometer R2.
4. Slowly vary V1 in steps and note down the corresponding VAK and IA readings in steps of 5
Volts and entered the readings in the tabular column.
5. Further vary V1 till SCR conducts, this can be noticed by sudden drop of VAK and rise of IA
note down this reading and tabulate the same.
6. After the SCR conducts, note down 3 or 4 readings.
7. Repeat the same procedure for different gate current for different values of VAK and IA.
8. Draw the graph of VAK v/s IA.
9. Note down IL & IH from the graph.

TO FIND THE LATCHING CURRENT & HOLDING CURRENT:

1. Apply about 20 V between anode and cathode by varying V1. Keep the load potentiometer
R1 at minimum position.
2. The device must be in the OFF state with gate open. Gradually increase Gate voltage-V2 till
the device turns ON.
3. Once the device turn on note the anode current which is called latching current.
4. Now start reducing the load gradually by adjusting R1. If the SCR does not turns OFF even
after the R1 at minimum position, then reduce V1.
5. Observe when the device goes to blocking mode. The current through the device at this
instant is the holding current of the device. Normally Ih < IL.

TABULATION: MODEL GRAPH:

S.No IG=IG1
VAK(V) IA(mA)

RESULT:

REVIEW QUESTIONS:
1. Define latching current.
2. Define holding current.
3. Define breakdown voltage.
4. Compare SCR and BJT.
5. What are the applications of SCR?

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Ex. No:1. b Date:

CHARACTERISTICS OF TRIAC
AIM:
To study the characteristics of TRIAC.

APPARATUS REQUIRED:
S.NO Instruments/Equipment Range Specifications Quantity
1. Firing circuit module - - 1
2. Voltmeter (0-50V) MC 1
3. Ammeter (0-500mA), (0-25mA) MC 1
4. Patch Chords - - -

THEORY:
A TRIAC is the bidirectional thyristor with three terminals. It is used to control power in AC
circuits. When in operation, a TRIAC is equivalent to two SCR’S connected in anti parallel. As the
TRIAC can conduct in both the directions, the term anode and cathode are not applicable to TRIAC. It
has three terminals namely MT1, MT2 and G.
With no signal to gate, the TRIAC will block both half cycles of applied voltage is case peak
value of this voltage is less than the break over voltage of VBO1 or VBO2 of TRIAC. The TRIAC can
however turns on in each half cycle of the applied voltage by applying positive or negative voltage with
respect to MT1 terminal. For convenience terminal MT1 is taken as the point for measuring voltage and
current at the gate and MT2 terminal.

CIRCUIT DIAGRAM:

PROCEDURE:
CHARACTERISTRICS:
1. Make the connections as per given in the circuit diagram.
2. Now switch ON the main supply and initially keep V1 & V2 at zero voltage position & R1 in
minimum position.
3. Adjust IG=IG1 say 5mA by varying V2 or gate current potentiometer R2.
4. Slowly vary V1 in steps and note down the corresponding VT1T2 and IA readings in steps of 5
Volts and enter the readings in the tabular column.
5. Further vary V1 till SCR conducts, this can be noticed by sudden drop of VT1T2 and rise of IA
note down this reading and tabulate the same.
6. After the TRIAC conducts, note down 3 or 4 readings.
7. Repeat the same procedure for different gate current for different values of VT1T2 and IA.
8. Draw the graph of VT1T2 vs. IA.

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TABULATION:
S.No IG
VT2T1(V) IA(mA)

MODEL GRAPH:

RESULT:

REVIEW QUESTIONS:
1. Compare TRIAC and DIAC.
2. Compare SCR and TRIAC.
3. Explain the switching characteristics of an ideal TRIAC.
4. Why TRIAC is applicable for ac motor speed control?
5. What are the applications of TRIAC?

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Ex. No:2. a Date:

CHARACTERISTICS OF MOSFET
AIM:
To study the characteristics of MOSFET.

APPARATUS REQUIRED:
S.NO Instruments/Equipment Range Specifications Quantity
1. Firing circuit module - - 1
2. Voltmeter (0-50V) MC 1
3. Ammeter (0-500mA) MC 1
4. Patch Chords - - -

THEORY:
A Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is a recent device developed
by combining the areas of field effect concept and MOS technology.
It has 3 terminals namely Drain, Source and Gate in place of the corresponding 3 terminals
collector, emitter and base for BJT. Here arrow mark indicates the direction of electron flow. Power
MOSFET’S are of two types, n-channel enhancement MOSFET and p-enhancement MOSFET. Out of
these 2 types n-channel enhancement MOSFET is more common because of higher mobility of
electrons. A BJT is a current controlled device whereas power MOSFET is a voltage controlled device.
The control signal or base current in BJT is much larger than the control signal or gate current required
in MOSFET. This is because of the fact that gate circuit impedance in MOSFET is extremely high of
the order of 109 ohm. This large impedance permits the MOSFET gate to driven directly from
microelectronic circuits. BJT suffers from secondary breakdown whereas MOSFET is free from the
problem. Power MOSFET’S are now finding increasing applications in low-power high frequency
converters.

MOSFET Output Characteristics:

It shows the variation of drain current as a function of drain source voltage as a parameter. For
lower values of VDS the graph between ID-VDS is almost linear; this indicates a constant value of on
state resistance RDS=VDS/ID. For given VGS if VDS is increased output characteristics is relatively flat
indicating that drain current is nearly constant. A load line intersects the output characteristics an A
and B. Here A indicates fully on condition and B indicates fully OFF condition. Power MOSFET
operates as a switch just like BJT.

CIRCUIT DIAGRAM:

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PROCEDURE:
DRAIN CHARACTERISTICS:
1. Make the connections as shown in the circuit diagram with meters.
2. Initially set V2 (V2 =VGS1=3.5Volts).
3. Slowly vary V1 in steps and note down ID and VDS.
4. Note down the value of VDS (Pinch of Voltage) after which ID becomes constant.
5. Repeat the above procedure for different values of VGS and note down ID and VDS.
6. Draw the graph of ID v/s VDS for different values of VGS.
TRANS CONDUCTANCE CHARACTERISTICS:
1. Make the connections as shown in the circuit diagram with meters.
2. Initially keep V1 and V2 to zero. Set V1=VDS1= 10V.
3. Slowly vary V2 (VGS) and note down ID and VGS readings for every 0.5 volts, and enter in the
tabular column.
4. Note down the values of VGS (threshold voltage VTH) after which the ID stands to increase
sharply.
5. Repeat the same for different values of VDS.
6. Draw the graph of ID v/s VGS.
TABULATION:
DRAINCHARACTERISTICS TRANSCONDUCTANCE CHARACTERISTICS

V2=VGS= V1=VDS1=
VDS (V) ID (mA) VGS (V) ID (mA)

MODEL GRAPH:
DRAIN CHARACTERISTICS TRANSFER CHARACTERISTICS

RESULT:

REVIEW QUESTIONS:
1. Compare MOSFET and JFET.
2. Compare MOSFET and BJT.
3. Why MOSFET is suitable for high speed switching applications?
4. What are the types of MOSFET?
5. What are the applications of MOSFET?

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Ex. No:2. b Date:

CHARACTERISTICS OF IGBT
AIM:
To study the output characteristics of IGBT.

APPARATUS REQUIRED:
S.NO Instruments/Equipment Range Specifications Quantity
1. Firing circuit module - - 1
2. Voltmeter (0-50V), (0-15V) MC 1
3. Ammeter (0-500mA) MC 1
4. Patch Chords - - -

THEORY:
Insulated gate bipolar transistor (IGBT) is a new development device in the area of power
MOSFET technology. This device combines the advantages of both MOSFET and BJT. Further, IGBT
is free from secondary breakdown problem. IGBT is also known as metal-oxide insulated gate transistor,
conductively modulated field effect transistor (COMFET), gain modulated FET (GEMFET), it was
also initially called insulated gate transistor (IGT). It has three terminals namely collector, base and gate.
Static V-I or output characteristics of an IGBT shows the variation of collector current IC and
collector emitter voltage VCE as a function of gate emitter voltage VGE.

CIRCUITDIAGRAM:

PROCEDURE:
Transfer Characteristics:
1. Make the connections as shown in the circuit diagram.
2. Initially keep V1 and V2 at minimum position.
3. Set V1= VCE1= 10V. Slowly vary V2 (VGE) in steps and note down IC and VGE readings for
every 0.5 Volts, and enter in the tabular column.
4. Repeat the same procedure for different values of VCE and draw the graph of IC v/s VGE.
Collector Characteristics:
1. Initially set V2 to VGE1=5Volts. Slowly vary V1 and note down IC and VGE.
2. For a particular value of VGE1 there is a pinch off voltage (VP) between collector and emitter
as shown if figure.
3. Repeat the same procedure for different values of VGE and note down IC v/s VGE
4. Draw the graph of IC v/s VGE for different values of VGE.

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TABULATION:
TRANSFER CHARACTERISTICS COLLECTOR CHARACTERISTICS:

V1=VCE1= V1=VGE1=
VGE V IC mA VCE (V) IC (mA)

MODEL GRAPH:
TRANSFER CHARACTERISTICS COLLECTOR CHARACTERISTICS

RESULT:

REVIEW QUESTIONS:
1. Compare MOSFET and IGBT.
2. What is IGBT?
3. Why IGBT is considered for very high-speed switching applications?
4. What are the drawbacks of IGBT?
5. What are the applications of IGBT?

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Ex. No:3 Date:

SINGLE PHASE HALF CONTROLLED CONVERTER
AIM:
To study the operation and the performance of the single phase half controlled converter with
Resistive Load and observe the waveform for different firing angle to calculate the dc output voltage.
APPARATUS REQUIRED:
S.NO Instruments/Equipment Range Specifications Quantity
1. Device Module - - 1
2. Resistive Load - - 1
4. CRO - - 1
5. Patch Chords - - Required

THEORY:
A 1Φ half controlled converter or semi converter uses a mixture of diodes & thyristors and there
is a limited control over the level of DC output voltage. During the positive half cycle, thyristor T1 is
forward biased. When thyristor T1 is fired at ωt=απ, the load is connected to the input supply through T1
and D2 during the period α<ωt<π. During the period from α<ωt<(π+ α), the input voltage is negativeand
the freewheeling diode Dm is forward biased. The thyristor T1 and the diode D2 are turned off. During
the negative Half cycle of input voltage, thyristor T2 is forward biased and firing thyristor T2 at ωt=(π+
α) will reverse bias Dm. The diode Dm turned off and load is connected to the supply through T2and D1.

CIRCUIT DIAGRAM:

PROCEDURE:
1. Connect the cathodes of T1 and T2 together, and the anodes of two diodes together. Connect the
anode of T1 and the cathode of diode D1 together. Also connect the anode of T2 and D2 together.
2. Connect 24 V AC input to the bridge circuit.
3. Connect the load consisting of R across the output terminals of the bridge converters.
4. Connect the triggering pulses from the firing circuit module to the corresponding SCRs in the
Power circuit.
5. Switch ON power supply to CRO and the input power module.
6. Connect the probes to observe the waveforms of the input AC voltage to the bridge and the
voltage across any one of the SCR.
7. Adjust the firing angle delay to about 60º and plot the output voltage across the load (R load)
using CRO.
8. Plot the load voltage waveform in synchronization with the AC input voltage.
9. Repeat the above procedure for various firing angle.
10. Switch off the power supply to the circuit.
11. Calculate the dc output voltage using formulae given and compare with the observed value.

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TABULATION:
R LOAD:
S.No Firing Angle DC Output Voltage (V)
(degrees) Theoretical Value Practical Value

MODEL GRAPH:

FOR R-LOAD
FORMULAE:
With R-Load(with continuous current)
The average dc output voltage is
Vdc= (Vm/ π) (1+cos α),Where ‘α’ is the firing angle.

MODEL CALCULATION:

Vrms=Vm/2
Vm=Vrms*2=24*2=34volts
RESULT:

REVIEW QUESTIONS
1. Differentiate converter and inverter.
2. What are the types of converter?
3. Compare half wave and full wave converter.
4. What are the drawbacks of half wave converter?
5. What is free wheeling diode?

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Ex. No:4 Date:

SINGLE PHASE FULLY CONTROLLED CONVERTER

AIM:
To study the operation and the performance of the single phase fully controlled converter with
Resistive Load and observe the waveform for different firing angle to calculate the dc output voltage.

APPARATUS REQUIRED:
S.NO Instruments/Equipment Range Specifications Quantity
1. Device Module - - 1
2. Resistive Load - - 1
4. CRO - - 1
5. Digital Multimeter - - 1
6. Patch Chords - - Required

THEORY:
A 1Φ full controlled converter uses a 4 thyristors and there is a full control over the level of DC output
voltage. T1 and T1’ are forward biased in positive half cycle and T2 and T2’ are forward biased during
negative half cycle. Conduction does not take place until the SCR’s are fired. Firing of incomingSCR
will apply reverse blocking voltage for outgoing SCR’s. SCR’s turn off due to line or natural
commutation. To ensure simultaneous firing, the pair of T1 and T1’ and T2 and T2’ are to be fired from
same firing circuit. The output of the gating signals is supplied through a pulse transformer. Resistive
Load:
In the converter with resistive load, during positive cycle T1 and T1’ are forward biased and are
simultaneously fired at a delay angle α. The supply voltage appears across the load resistance R. The
current waveform will follow the voltage waveform. At ωt=π the current falls to zero and SCRs 1 and 1’
turn off by natural commutation. The load voltage is zero from π to π+α, until the T2’ and T2 arefired
in the negative half cycle. The load current now flow from the supply, via SCR2’, load and T2.Theload
current through the load is the same in both half-cycles. The relevant waveforms are shown in fig. The
average dc voltage across the load is
Vdc=(Vm/ π) (1+cos α)
Where α- firing angle delay.

CIRCUIT DIAGRAM:

PROCEDURE:
1. From the single phase bridge circuit, connect the cathode of T1 and T2 together.
2. Connect the anodes of T1’ and T2’ together.
3. Connect anode of T1 to cathode of T2’.
4. Connect the anode of T2 to cathode of T1’.

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5. Connect the gating signals to the SCRs from the firing circuit module.
6. Connect 24V AC input to the bridge circuit.
7. Connect the CRO probes to observe the output load voltage and the voltage across SCR T2’.
8. Switch ON the power supply to Trainer Module & CRO.
9. Observe the input ac line waveform & output load voltage with a firing angle zero. Since T1’
conducts only during positive half cycles, the output load voltages waveform can be easily
synchronized to the ac waveform drawn to 30º.
10. Vary the firing angle delay α by adjusting the pot provided in the bridge firing circuit module
and observe the output voltage.
11. Repeat above procedure for various firing angle.
12. Calculate the output dc voltage using formulae given and compare with observed value.
13. Switch off power supply to the bridge circuit.

TABULATION:

S.No Firing Angle DC Output Voltage (V)

(degrees) Theoretical Value Practical Value

MODEL GRAPH:

R- LOAD

MODEL CALCULATION:

Vrms=Vm/2
Vm=Vrms*2=24*2=34volts

RESULT:

REVIEW QUESTIONS
1. What are the advantages of full wave converter?
2. What are the types of full wave converter?
3. Compare diode and SCR.
4. What are the advantages of SCR?
5. What is inversion mode of operation?

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Ex. No:5 Date:

STEP DOWN AND STEP UP MOSFET BASED CHOPPER

a) Step down chopper

AIM:
To Construct step down MOSFET based choppers and to draw its output response.

APPARATUS REQUIRED:
S.NO Instruments/Equipment Range Specifications Quantity
1. Device Module - - 1
2. Resistance load - - 1
3. CRO - - 1
4. Digital Multimeter - - 1
5. Patch Chords - - Required

THEORY:
In AC application, the transformer serves to convert electric power efficiently from one voltage
level to another. Static DC to DC converters are called as choppers. Choppers are widely used for traction
motor control, in electric automobiles, trolley cars, marine hoists, fork lift trucks, and mine haulers. The
circuit configuration of a chopper converter can be designed either to step down the input voltage level
or step up the input voltage to a higher voltage level.
Step Down Chopper:
When the switch is ON for a time ton, the input voltage Vo appears across the load. If the switch
is OFF for a time toff, the voltage across the load is zero. The waveforms of the output voltage and load
current for resistive load were obtained.
Neglecting the voltage drop across the switch, the average output voltage Vo is given by
Vo=[ton/T]*Vs= D VS
where D = ton/T – duty cycle ratio
T = ton+ toff – chopping period
f = 1/T – chopping frequency
Theoretically the duty cycle ratio D can be varied from 0 to 1by varying ton and t off. Thus the
output voltage Vo can be varied from 0 to Vs by controlling D and hence the power flow can be
controlled.
When the chopping frequency f is kept constant and the on time ton is varied, the width of the
pulse is varied and the chopper is known as constant frequency chopper. This type of control is known
as Pulse Width Modulation (PWM) control.

CIRCUIT DIAGRAM:

PROCEDURE:
1. Connections are made as per the circuit diagram.
2. Switch ON the supply for power module circuit.

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3. Set the input voltage 10V in the power module and observe the output voltage using CRO.
4. Vary the frequency and duty cycles in the power module for the same 10V get various output
voltage.
5. Draw the graph for Vs and VO .
TABULATION:
Vs = volts
S.No TON TOFF T Duty Ratio Vo=[ton/T]*Vs
D = TON/T
Measured Value Calculated Value

MODEL GRAPH

OUTPUT WAVEFORM

b) Step up chopper

AIM :
To Construct step upMOSFET based choppers and to draw its output response.

APPARATUS REQUIRED:
S.NO Instruments/Equipment Range Specifications Quantity
1. Device Module - - 1
2. Resistance load - - 1
3. CRO - - 1
4. Digital Multimeter - - 1
5. Patch Chords - - Required

THEORY:
STEP UP MOSFET BASED DC CHOPPER:
In step-up chopper, a large inductor, L is in series with the source voltage Vs. During the time
period Ton the chopper is turned on, the inductor stores energy. When the chopper is turned off, the
current is forced to flow through the diode and load, for a time Toff as the inductor current cannot decay
suddenly. When the current decreases, the polarity of the emf induced in L is reversed.As a result the
total voltage available across the load is given by the equation V0 = Vs + L (di/dt). The voltage V0 exceeds
the source voltage and hence the circuit acts as a step-up chopper and the energy which is stored in L is
released to the load.

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EE3511 POWER ELECTRONICS LABORATORY DEPARTMENT of EEE 2024-2025

CIRCUIT DIAGRAM:

PROCEDURE:
1. Connections are made as per the circuit diagram.
2. Switch ON the supply for power module circuit.
3. Set the input voltage 10V in the power module and observe the output voltage using CRO.
4. Vary the duty cycles in the power module for the same 10V, get various output voltages.
5. Draw the graph for Vs and Vo .
TABULATION: Vs = volts

VS
S.No TON TOFF T Duty Ratio Vo =
D = TON/T T 
1 −  ON 
 TOFF 
Measured Value Calculated Value

MODEL GRAPH:

RESULT:

REVIEW QUESTIONS:
1. What are the types of MOSFET?
2. Compare MOSFET and SCR.
3. What are the types of driver circuit used in motor applications?
4. Define turn on and turn off for a MOSFET.
5. Why thyristor is not preferred in chopper circuit mostly?

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EE3511 POWER ELECTRONICS LABORATORY DEPARTMENT of EEE 2024-2025

Ex. No:6 Date:

IGBT BASED SINGLE PHASE PWM INVERTER

AIM:

To study the operation of single phase PWM inverter using IGBT.

APPARATUS REQUIRED:
S.NO Instruments/Equipment Range Specifications Quantity
1. IGBT PWM Inverter Kit - - 1
2. Resistive Load - - 1
3. CRO - - 1
4. Multimeter - - 1
5. Patch Chords - - Required

THEORY:
DC-AC converters are known as inverters. The function of an inverter is to change a dc input
voltage to a symmetrical ac output voltage of desired magnitude and frequency. The output voltage
waveforms of ideal inverters should be sinusoidal. However, the waveforms of practical inverters are
non sinusoidal and contain certain harmonics. With the availability of high-speed power
semiconductor devices, the harmonic contents of output voltage can be minimized or reduced
significantly by high frequency switching techniques. Inverters are broadly classified into two types: 1)
single-phase inverters and 2) three-phase inverters. An inverter is called a voltage fed inverter if the
input voltage remains constant, a current fed inverter if the input current is maintained constant, and
variable dc linked inverter if the input voltage is controllable. The VFIs are further divided into i)
Square wave inverters and ii) PWM inverters.
In pulse width modulated inverters, the input dc voltage is essentially constant in magnitude.
A diode bridge rectifier is used to obtain te dc input voltage to the inverter form ac mains. Therefore the
inverter must control both the magnitude and the frequency of the ac output voltage. This is achieved by
Pulse width Modulation (PWM) of inverters. There are various schemes to pulse width modulate the
inverter switches in order to shape the output ac voltages to be as close to a sine wave possible. The
various techniques are:
i) Single pulse width modulation
ii) Multiple pulse width modulation
iii) Sinusoidal pulse width modulation
iv) Trapezoidal modulation
v) Staircase modulation
vi) Stepped modulation
vii) Hysteresis current control (delta modulation)
Out of the various, PWM techniques the sinusoidal pulse width modulation is most commonly used.

Sinusoidal Pulse Width Modulation:

The switching sequence for the inverter switches in this case, is obtained by comparing a
sinusoidal control signal, of adjustable amplitude and frequency with a fixed frequency triangular
carrier. The frequency of the triangular carrier wave determines the switching frequency (fs) of the
inverter switches. The frequency (f1) of the sinusoidal control signal decides the fundamental frequency
of the inverter output voltage will contain voltage components at harmonic frequencies of (f1). The
amplitude modulation ration ma also called the modulation index is defined as
Ma= Vcontrol / Vtri
The frequency modulation ratio is defined as
Mf=fs/fI

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EE3511 POWER ELECTRONICS LABORATORY DEPARTMENT of EEE 2024-2025

CIRCUIT DIAGRAM:

PROCEDURE:
1. Connections are made as per the circuit diagram.
2. Ensure that the circuit breaker and pulse release is in off position.
3. Connect the gating signal from the inverter module.
4. Switch on the power supply.
5. Keep the frequency knob to particular frequency and observe the rectangular and triangular
carrier waveforms on the CRO.
6. Observe the output waveform across the load and measure the output voltage.

MODEL GRAPH

RESULT:

REVIEW QUESTIONS
1. What are the types of modulation in power electronic devices?
2. What are the types of inverter used to generate PWM signal?
3. What is PWM?
4. Why PWM is necessary for switching power devices?
5. What are the advantages of IGBT?

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EE3511 POWER ELECTRONICS LABORATORY DEPARTMENT of EEE 2024-2025

Ex. No: 7 Date:

IGBT BASED THREE-PHASE PWM INVERTER
AIM:
To study the operation of three phase IGBT based PWM inverter.

APPARATUS:
S.NO Instruments/Equipment Range Specifications Quantity
1. IGBT PWM Inverter Kit - - 1
2. RPS (0-30V) 2A - - 1
3. Resistive Load - - 1
4. CRO - - 1
5. Multimeter - - 1
6. Patch Chords - - Required
THEORY:
The IGBT has the high input impedance and high-speed characteristics of a MOSFET with the
conductivity characteristic (low saturation voltage) of a bipolar transistor. The IGBT is turned on by
applying a positive voltage between the gate and emitter and, as in the MOSFET, it is turned off by
making the gate signal zero or slightly negative. The IGBT has a much lower voltage drop than a
MOSFET of similar ratings. The structure of an IGBT is more like a thyristor and MOSFET. For a given
IGBT, there is a critical value of collector current that will cause a large enough voltage drop to activate
the thyristor. Hence, the device manufacturer specifies the peak allowable collector current that can flow
without latch-up occurring. There is also a corresponding gate source voltage thatpermits this current
to flow that should not be exceeded. Like the power MOSFET, the IGBT does not exhibit the secondary
breakdown phenomenon common to bipolar transistors. However, care should be taken not to exceed
the maximum power dissipation and specified maximum junction temperature of the device under all
conditions for guaranteed reliable operation. The on state
voltage of the IGBT is heavily dependent on the gate voltage. To obtain a low on-state voltage, a
sufficiently high gate voltage must be applied.
CIRCUIT DIAGRAM

PROCEDURE:
1. Connections are made as per the circuit diagram.
2. Ensure that the circuit breaker and pulse release is in off position.
3. Connect the gating signal from the inverter module.
4. Switch on the power supply.
5. Keep the frequency knob to particular frequency and observe the rectangular and triangular
carrier waveforms on the CRO.
6. Observe the output waveform across the load and measure the output voltage.

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EE3511 POWER ELECTRONICS LABORATORY DEPARTMENT of EEE 2024-2025

TABULATION:

S.NO INPUT VOLTAGE OUTPUT VOLTAGE (V)

(V)
VRY VYB VBR

MODEL GRAPH:

RESULT:

REVIEW QUESTIONS
1. What are the types of PWM inverter?
2. Why PWM technique is preferred over other techniques?
3. Compare voltage source inverter and current source inverter.
4. What are the types of voltage source inverter?
5. What are the advantages of IGBT?

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EE3511 POWER ELECTRONICS LABORATORY DEPARTMENT of EEE 2024-2025

Ex. No:8 Date:

SINGLE PHASE AC VOLTAGE CONTROLLER USING SCR WITH
R LOAD
AIM:
To study the operation of Single-phase AC voltage controller using SCR with R Load.
APPARATUS REQUIRED:

S.NO Instruments/Equipment Range Quantity

1. AC Phase Control Kit - 1

2. Lamp 40 Watts 1
3. Voltmeter (0-230) V 1
4. CRO 20 MHz or 25 MHz 1

THEORY:
AC Voltage controller converts fixed voltage, fixed frequency AC in to
variable voltage fixed frequency AC. These voltage controllers are also called as AC voltage
regulators. Since the circuit chops the waveform on positive and negative sides, it is also called
as AC or Bidirectional chopper. Some of the applications are heating, welding, starting and speed
control of induction motors.

FORMULA:

1
V Vm  sin 2 
−+
2
=
RMS  
2
Where
α =Firing angle(degree)
Vm= Peak Voltage (volt)
VRMS = RMS Output Voltage (volt)

CIRCUIT DIAGRAM

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EE3511 POWER ELECTRONICS LABORATORY DEPARTMENT of EEE 2024-2025

MODEL GRAPH

R Load
PROCEDURE
1. Connections are made as per the circuit diagram.
2. Switch on the power supply.
3. Vary the brightness of the lamp by using potentiometer.
4. Obtain the output voltage waveform across load by using CRO.
5. Calculate the RMS output voltage by using the formula.
6. Take the voltmeter reading.
7. Repeat the above procedure for different value of firing angle by using potentiometer.

TABULATION:
EXPERIMENTAL RESULTS FOR R LOAD:

S.NO Time Period T(ms) Firing angle (α) VRMS (Practical Value)

RESULT:

REVIEW QUESTIONS
1. Distinguish between ON-OFF control and phase control of ac voltage controller?
2. What are the applications of AC voltage controllers?
3. Mention the different names of AC voltage controllers.
4. Do you require isolation between gating signals for two thyristors in a single phase full
wave AC voltage controller? Justify your answer.

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EE3511 POWER ELECTRONICS LABORATORY DEPARTMENT of EEE 2024-2025

Ex. No:9. a
Date:
SIMULATION OF SINGLE-PHASE HALF CONTROLLED BRIDGE RECTIFIER
WITH R LOAD.
AIM:
To simulate the 1ɸ Half controlled rectifier circuit with R & RL load and obtain the
corresponding waveforms using MATLAB / SIMULINK
TOOLS REQUIRED:
1. AC voltage source
2. Voltage measurement
3. Current measurement
4. Thyristor
5. Diode
6. Pulse Generator
FORMULA USED:
V0 =Vm (1+cosα) /π
Where V0= output voltage, Vm=maximum voltage

SIMULATION MODEL:

. Simulation model for 1φ half controlled bridge rectifier with RL load(L = 0.006H)
supply voltage & supply current
100

-10
0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1
output vo ltage & output current
100

50

0
0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1
gate pulse
1

0.5

0
0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1
voltage across T2
100

-100
0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1
Time

Waveform for 1φ half controlled bridge rectifier with R load

RESULT :

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EE3511 POWER ELECTRONICS LABORATORY DEPARTMENT of EEE 2024-2025

Ex. No: 9. b Date:

SIMULATION OF SINGLE PHASE FULLY CONTROLLED BRIDGE RECTIFIER
WITH R LOAD.
AIM:
To simulate the 1ɸ Full controlled rectifier circuit with R & RL load and obtain the
corresponding waveforms using MATLAB / SIMULINK.
TOOLS REQUIRED:
1. AC voltage source
2. Voltage measurement
3. Current measurement
4. Thyristor
5. Pulse Generator
FORMULA USED:
Average DC voltage, Vdc = Vm(1+cosα)/π (volts)
Rms output voltage, Vrms= Vm((π-α)+sin2α/2)1/2 /√2π (volts)
Average output current, Idc=Vdc/R (Amps)
RMS output Current, Irms=Vrms/R (Amps)
Where, Vm is the max. input voltage
α is the firing angle of the SCR
SIMULATION MODEL :

WAVEFORMS OF THE MODEL:

100

-100
0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1

100

50

-50 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1

100

50

-50
0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1
Time

Waveform for 1φ fully controlled bridge rectifier with R load

RESULT :

Agni College of Technology 26

EE8661 Power Electronics and Drives Lab Department of EEE 2019-2020

Ex. No: 9.c Date:

SIMULATION OF THREE PHASE HALF CONTROLLED RECTIFIER WITH
R LOAD.
AIM:
To simulate the 3ɸ half controlled rectifier circuit with R & RL load and obtain the
corresponding waveforms using MATLAB / SIMULINK.
TOOLS REQUIRED:
1. AC supply
2. Voltage measurement
3. Current measurement
4. Series RLC branch
5. Thyristor
FORMULA USED:
Average DC voltage, Vo =3 Vml(cosα)/π (volts)
Rms output voltage, Vor= Vml[(√3/2π)((π/3)+(√3/2cosα))]1/2 (volts)
RMS source current, Is=Io√2/3 (Amps)
Each SCR conducts for 120◦ for every 360◦. Therefore the RMS value of SCR current is Ith=
Io√1/3.
SIMULATION MODEL:

Simulation model for Three Phase Half Controlled Bridge Rectifier with R load
WAVEFORMS OF THE MODEL:
RESISTIVE LOAD
200

100

-100

-200
0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0.045 0.05

200

150

100

50

-50
0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0.045 0.05
Time

Waveforms for Three Phase Half Controlled Bridge Rectifier with R load
RESULT:

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EE8661 Power Electronics and Drives Lab Department of EEE 2019-2020

Ex. No: 9.d Date:

SIMULATION OF THREE PHASE FULLY CONTROLLED BRIDGE RECTIFIER
WITH R- LOAD
AIM:
To simulate the three phase fully controlled bridge rectifier circuit with R and RL load and
obtain the corresponding waveform using MATLAB/SIMULINK.
TOOLS REQUIRED:
1. AC voltage source
2. Voltage measurement
3. Pulse generator
4. Series RLC Branch
FORMULA USED:
1. Average output voltage Vdc=(3√3Vm )/π cosα
2. Rms value of output voltage Vrms=√3Vm(1/2+3√3/4πcos2α)
SIMULATION MODEL:

WAVEFORM

200

-200
0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0.045 0.05

200

-200
0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0.045 0.05

200

100

-100
0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0.045 0.05
Time

Waveforms for Three Phase Fully Controlled Bridge Rectifier with R load
RESULT:
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EE8661 Power Electronics and Drives Lab Department of EEE 2019-2020

Ex. No: 9. e Date:

SIMULATION OF SINGLE-PHASE HALF WAVE AC VOLTAGE CONTROLLER
WITH R LOAD.
AIM:
To simulate the 1ɸ half wave ac voltage controller circuit with R load and obtain the
corresponding waveforms using MATLAB / SIMULINK.

TOOLS REQUIRED:
1. AC voltage source
2. Voltage measurement
3. Current measurement
4. Thyristor
5. Diode
FORMULA USED:
√2V sin (π-wt)=VR
At this instant wt=α and hence
√2V sin (π-α) = VR
α = π-sin (VR/√2V)
Rmax= 2√2V/wCVR
Where, VR is breakdown voltage of the DIAC
α is the firing angle of the SCR
V is the Supply voltage
SIMULATION MODEL:

Simulation model for Single Phase Half Wave Ac Voltage Controller with R Load
WAVEFORMS OF THE MODEL:
100

50

-50

-100
0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1

100

50

-50

-100
0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1
Time

Waveforms for Single Phase Half Wave Ac Voltage Controller with R Load
RESULT:

Agni College of Technology 29

EE8661 Power Electronics and Drives Lab Department of EEE 2019-2020

Ex. No: 9.f Date:

SIMULATION OF SINGLE-PHASE FULL WAVE AC VOLTAGE CONTROLLER
WITH R LOAD
AIM:
To simulate the 1ɸ full wave ac voltage controller circuit with R load and obtain the
corresponding waveforms using MATLAB / SIMULINK.
TOOLS REQUIRED:
1. AC voltage source
2. Voltage measurement
3. Current measurement
4. Thyristor
FORMULA USED:
√2V sin (π-wt)=VR
At this instant wt=α and hence
√2V sin (π-α) = VR
α = π-sin (VR/√2V)
Rmax= 2√2V/wCVR
Where, VR is breakdown voltage of the DIAC
α is the firing angle of the SCR
V is the Supply voltage
SIMULATION MODEL:

WAVEFORMS OF THE MODEL:

100

50

-50

-100
0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1

100

50

-50

-100
0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1
Time

Waveforms for Single Phase Full Wave Ac Voltage Controller with R Load
RESULT:

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EE8661 Power Electronics and Drives Lab Department of EEE 2019-2020

Ex. No: 9.g Date:

SIMULATION OF THREE PHASE FULL WAVE AC VOLTAGE CONTROLLER
WITH R- LOAD
AIM:
To simulate the three phase full wave AC voltage controller circuit with R load and obtain
the corresponding waveform using MATLAB/SIMULINK.

TOOLS REQUIRED:
1. AC voltage source
2. Voltage measurement
3. Pulse generator

FORMULA USED:
1. Average output voltage Vdc=3√3Vmπ/ cosα
2. Rms value of output voltage Vrms=√3Vm(1/2+3√3/4πcos2α)

SIMULATION MODEL:

Simulation model for Three Phase Full Wave Ac Voltage Controller

WAVEFORM
R LOAD
200

100

-100

-200
0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2

100

50

-50

-100
0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2
Time

Waveform for Three Phase Full Wave Ac Voltage Controller with R Load
RESULT:

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EE8661 Power Electronics and Drives Lab Department of EEE 2019-2020

Ex. No: 9.h Date:

SIMULATION OF STEP-DOWN DC-DC CHOPPER WITH R- LOAD

AIM:
To simulate the step-down dc-dc chopper with R-load and obtain the corresponding
waveforms using MATLAB / SIMULINK.

TOOLS REQUIRED:
1. DC Voltage source
2. IGBT/Diode
3. Pulse generator

FORMULA USED:
Vo = K*Vs
Where K = Duty cycle
SIMULATION MODEL:

Simulation model for step down dc- dc chopper with R load

WAVEFORMS OF THE MODEL:

RESISTIVE LOAD
supply voltage
13

12

11
0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 .1
gating pulse
1

0.5

0
0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 .1
output voltage
20

10

0
0 .01 0.02 0.03 0.04 0.05 0.06 0 .07 0.08 0.09 0.1
o utput current
4

0
0 .01 0.02 0.03 0.04 0.05 0.06 0 .07 0.08 0.09 0.1
Time

Waveforms for step down DC –DC chopper with R load

RESULT:

Agni College of Technology 32

EE8661 Power Electronics and Drives Lab Department of EEE 2019-2020

Ex. No:10 DATE:

SWITCHED MODE POWER CONVERTERS

AIM: To study switched mode converter circuits.

APPARATUS REQUIRED: Switched mode power converter circuit, DC power supply,

multimeter, connecting wires etc.

THEORY: A modern switching mode DC-DC converter is a power supply, which consists of
semiconductor switching devices (e.g., transistors and diodes) and energy storage elements,
such as inductors and capacitors. In general, the DC-DC converters are used to convert the
voltage level of the input into a different voltage level of the output. Theswitching mode power
supplies have been used for many decades, as the technology enables a compact and light-
weighted design and provides higher electrical energy conversion efficiency. One of the great
applications was the Apollo spacecraft, which used DC-DC converters with a switching
frequency of 1.6 KHz.
The DC-DC converters have been widely accepted recently, especially due to the
growing prevalence of the use of portable electronics, such as smartphones and tablet
computers, where the batteries are the primary energy sources, and the increased acceptance
of solar energy systems, in which the converters are used to convert the energy harvested from
photovoltaic cells, whose voltage is one level of DC, to another level of DC for charging
batteries.

PROCEDURE:

For variable input constant load:

1. Using multimeter keep SET voltage to 1.2V w.r.t. GND terminals.

2. Connect DC input terminals to 30V/1A DC power supply.

3. Select Load 1 or load 2 or load 3 of converter circuit.

4. Connect multimeter across the output DC voltage VO terminal.

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5. Switch on converter unit. Vary external DC supply voltage from 12V to 25V.

6. Note the output voltage across output VO voltage terminals with reference to
GND terminal. (Must be +12 V).

Sl. No. Input Voltage Output Voltage

1.

2.

3.

4.

5.

For constant input variable load:

1. Using multimeter keep SET voltage to 1.2V w.r.t. GND terminals.

2. Connect DC input terminals to 30V/1A DC power supply.

3. Connect multimeter across the output DC voltage VO terminal with reference

to GND.

4. Keep DC input voltage say 20V.

5. Switch on converter unit.

6. Note the output voltage across output VO voltage terminals with reference to
GND terminal. (Must be constant at +12 V).

7. Select the different loads and conduct the experiments.

Sl. No. Loads Output Voltage

1. Load1

2. Load2

3. Load3

For variable set voltages (SET V):

1. Using multimeter keep SET voltage to .5V w.r.t. GND terminals.

2. Connect DC input terminals to 30V/1A DC power supply.

3. Set the input voltage to 26 V.

4. Select Load 1 or load 2 or load 3 of converter circuit.

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5. Switch on converter unit.

6. Note the output load voltage VO for different set voltages (SET V).

7. Note the voltage across the feedback terminal F/B V also.

Sl No. Set (SET V) Feedback(F/B Output Voltage (VO)

Voltage V) Voltage

1.

2.

3.

4.

5.

RESULT:

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