Q# Answer Explanation

1 A MESFET (Metal-Semiconductor Field-Effect Transistor) uses an MS interface.

2 D Image sensors like CCD and CMOS use MOS structures.
3 C Varicap is a diode that uses the p–n junction.
4 B HBT (Heterojunction Bipolar Transistor) uses heterostructure junctions.
5 B IC technology trend includes larger scale integration to fit more transistors onto a chip (GSI - giga
scale integration).
6 C Reducing power supply voltage reduces power consumption and improves switching speed as per P
= kCV²f and waveform characteristics.
7 D High speed processing is one of the key goals in modern IC design trends.
8 B Reducing power supply voltage helps improve switching speed in ICs by reducing rise and fall times.
9 C Semiconductors have resistivity in the range of 10■■ to 10■ Ωm, as stated in the theory document.
10 C Semiconductors have electrical conductivity between conductors and insulators.
11 A Silicon (Si) is the most important elemental semiconductor, made of a single type of atom.
12 B Gallium Arsenide (GaAs) is the most important compound semiconductor, made of atoms from
Groups III and V.
13 C Elemental semiconductors are composed of one type of atom, such as Si or Ge.
14 D Elemental semiconductors like Si and Ge are in Group IV of the periodic table.
15 D Silicon has a diamond crystal structure, which consists of 2 interpenetrating FCC lattices.
16 B Lattice + basis = crystal structure, according to the definition in crystal lattice theory.
17 A The unit cell is the smallest building block that repeats to form the entire crystal.
18 D Amorphous solids lack regular atomic arrangement.
19 A In body-centered cubic (BCC), there is an atom inside the center of the cube.
20 B Crystal planes and directions are represented by 3 small integers (Miller indices).
21 B [111] is a direction vector perpendicular to the (111) plane.
22 C A plane normal to y-axis corresponds to (010) Miller index.
23 C Intercepts at (2,3,4) → reciprocals (1/2, 1/3, 1/4) → LCM = (6,4,3) = (321).
24 B A plane parallel to x and z axes will intersect only y-axis → Miller index is (010).
25 C Miller indices (326) → reciprocals = (1/3, 1/2, 1/6) → intercepts = (3,2,6).
26 A [211] direction connects origin (0,0,0) to (1,1,2).
27 C Based on the illustration, plane (a) corresponds to Miller indices (123).
28 D Based on the figure (b), correct indices are (326).
29 D Direction vector shown in (c) corresponds to (320).
30 B Quantum theory states that energy is emitted or absorbed in discrete packets called quanta.
31 C De Broglie proposed that particles like electrons exhibit both wave and particle nature.
32 B De Broglie wavelength λ = h/mv, hence inversely proportional to velocity.
33 A E = hc/λ = 1240 eV·nm / 500 nm = 2.48 eV.
34 B Spectral lines are produced when excited electrons return to lower energy levels.
35 B Bright-line spectra are due to electrons dropping to lower energy states.
36 C The energy of a photon is given by E = hf.
37 D Bohr’s model is based on Planck’s quantum theory.
38 B Bohr proposed electrons move in specific, quantized orbits.
39 B Each orbit has a fixed energy level.
40 C n=3 to n=2 transition releases more energy than the others listed.
41 A Energy difference between levels decreases with increasing n.
42 A Bohr radius: rn = 0.53 × n² nm.
43 D Ratio = r■/r■ = (0.53×9)/(0.53×4) = 9/4.
44 D E ∝ -1/n² → E■ = -9E for E■ = -E.
45 B E■ = –13.6 eV / 9 = –1.51 eV ≈ –3.4 eV (in options).
46 D Electrons move in defined orbits in Bohr’s model.
47 C r■ = 0.53 × 9 = 9a■.
48 C Electron absorbs a quantum of energy to move to higher state.
49 C From n=5 to n=2, wavelength is 410 nm (as per hydrogen spectrum).
50 A Uncertainty principle gives a minimum limit: ∆x·∆p ≥ ■/2.
51 C It is impossible to determine both position and momentum precisely (Heisenberg).
52 B Bohr's model conflicts with Heisenberg's principle due to fixed orbits.
53 D Wave-mechanical model is based on de Broglie, Heisenberg, and Schrödinger.
54 D Uncertainty principle relates to position and momentum.
55 D If ∆x = 0, then ∆p → ∞ (Heisenberg principle).
56 A |ψ|² gives the probability distribution.
57 B The square of the wave function (ψ²) is proportional to electron density.
58 A Transfer of electrons forms ions which attract electrostatically—this is ionic bonding.
59 B NaCl is an ionic compound, due to electron transfer between Na and Cl.
60 D Silicon atoms form covalent bonds by sharing electrons.
61 E Compound semiconductors often exhibit both covalent and ionic bonding.
62 D Spin quantum number is postulated; not derived from Schrödinger's equation.
63 C Magnetic quantum number (m) defines orbital orientation in space.
64 A Principal quantum number (n) specifies energy and average distance from the nucleus.
65 C 2p-orbital: n=2, l=1.
66 B Maximum electrons with same spin in a subshell = number of orbitals = 2l + 1.
67 B Each orbital can hold 2 electrons with opposite spins.
68 C Each electron is uniquely defined by 4 quantum numbers.
69 B Principal quantum number (n) designates energy levels.
70 A Letters s, p, d, f represent sublevels within a shell.
71 A Orbital is the region where electrons are most likely found.
72 A The p sublevel has 3 orbitals.
73 B l = 0 ⇒ m must be 0, but here m = 1 ⇒ invalid.
74 C Set (2,1,-1,1/2) is valid within rules of quantum numbers.
75 D For n = 4 and l = 3 → subshell = 4f.
76 B The number of orbitals in a shell = n².
77 C Max number of electrons = 2n².
78 A Number of subshells in the nth level is n.
79 C s → 2e■, p → 6e■, d → 10e■.
80 A Only one electron can occupy a specific orbital with given set of quantum numbers.
81 B For n = 3: l = 0,1,2 → s, p, d.
82 B N shell = n = 4 → 4 subshells.
83 D Pauli Exclusion Principle: no two electrons have the same 4 quantum numbers.
84 A s orbitals are spherical in shape.
85 C Shape is determined by angular quantum number l, i.e., sublevel.
86 B 'p' refers to the shape of the orbital (dumbbell).
87 B Valence band electrons are tightly bound to atoms.
88 A Main difference between insulators and semiconductors is band gap size.
89 B Covalent bond energy ≈ band gap in semiconductors.
90 D The distinction is based on the width of the forbidden band (Eg).
91 B Band structure helps classify materials as conductor, semiconductor, or insulator.
92 A GaAs is a direct band gap semiconductor.
93 C Free electrons reside in the conduction band.
94 C Insulators have the largest band gaps (>4 eV).
95 B Energy band formation is a result of Pauli Exclusion Principle.
96 C Eg_conductor < Eg_semiconductor < Eg_insulator.
97 A In insulators, conduction band is empty.
98 C Charge carriers in semiconductors include both electrons and holes.
99 B Silicon is indirect, requiring phonon assistance to emit light.
100 D GaAs is a direct band gap material.
101 B Si is an indirect band gap semiconductor.
102 A In direct band gap materials, both bands align at same momentum.
103 B In indirect band gap, bands do not align in momentum (k).
104 C Silicon and Germanium are two elemental semiconductors.
105 B A hole is the absence of an electron in a covalent bond.
106 A As temperature increases, more electrons and holes are generated.
107 C At 0 K, intrinsic semiconductors behave as perfect insulators.
108 B With no free carriers, intrinsic semiconductors act like insulators at 0 K.
109 B Aluminum is a metal, not an intrinsic semiconductor.
110 B Intrinsic semiconductors are pure forms of semiconductor material.
111 C At room temperature, current is due to both thermally generated electrons and holes.
112 C Phosphorus (Group V) added to Si creates n-type material.
113 A Electrons are majority carriers in n-type semiconductors.
114 B Holes are minority carriers in n-type material.
115 B Holes are the majority carriers in p-type semiconductors.
116 A Electrons are minority carriers in p-type semiconductors.
117 D Pentavalent impurity adds extra electrons → n-type.
118 B Trivalent impurity introduces acceptor level → creates holes.
119 A Extrinsic semiconductors are doped semiconductors.
120 B Acceptor atoms have three valence electrons (trivalent).
121 D Arsenic (As) is pentavalent → donor in Si.
122 C The process of adding impurity is called doping.
123 C Si + As = n-type semiconductor.
124 C Holes in p-type move through valence band.
125 B As is a Group V element → n-type dopant.
126 D Donors → electrons; Acceptors → holes.
127 D n-type doping requires valency 5 (Group V).
128 B p-type doping uses Group III (valency = 3).
129 D Acceptor impurity (Group III) → p-type semiconductor.
130 B Donor level lies slightly below the conduction band (EC).
131 C Acceptor level lies slightly above the valence band (EV).
132 B Doping adds free carriers, increasing conductivity.
133 A Acceptor level is near valence band in p-type.
134 C Fermi-Dirac: f(E) = 1 / (1 + exp((E–Ef)/kT)).
135 B At T=0 K, all states below EF are fully occupied → probability = 1.
136 A At T=0 K, all states above EF are empty → probability = 0.
137 C At T=0 K and E=Ef → probability is 0.5.
138 A For intrinsic semiconductor, Ef is near middle of the bandgap.
139 B Fermi level near conduction band → n-type.
140 B In n-type, Ef shifts closer to conduction band.
141 C In p-type, Ef shifts closer to valence band.
142 D If Ef lies in conduction band, the material is degenerate.
143 D Ef near EV → p >> n → p-type.
144 B Using ni ratio formula: ni ∝ exp(–Eg/2kT), the ratio ≈ 46.81.
145 A niA/niB ∝ sqrt(NC_NV ratio) * exp(–∆Eg/2kT) → 0.09.
146 B n = ni² / p = (1.5×10¹■)² / 2.25×10¹■ = 10■ cm■³.
147 A Use p0 ≈ NV * exp(-(Ef – EV)/kT) = 1.8848e19 * exp(–0.22/0.026) ≈ 1.98e15.
148 A p = ni² / n = (1.5e10)² / 5e14 = 4.5e5.
149 B ∆Ef = –kT·ln(NA/ni) = –0.026·ln(1e15/1.5e10) ≈ –0.67 eV.
150 C ∆Ef = +0.026·ln(5e16/1.5e10) ≈ +0.48 eV.
151 C n ≈ NC·exp(–(EC–Ef)/kT) → solve for ND = n ≈ 6.0953e19·exp(–0.215/0.026) ≈ 8.69e15.
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157 C Drift velocity is proportional to carrier mobility.
158 B –µnE represents average drift velocity of electrons.
159 A Lattice vibrations increase with temperature, scattering carriers and lowering mobility.
160 B J = qnµv → 7/4 = (7/5)(v_e/v_h) → v_e/v_h = 5/4.
161 B Electron mobility (µn) is generally greater than hole mobility (µp).
162 A µ = v/E = 5 m/s / 100 V/m = 0.05 m²/Vs.
163 C Mobility is µ = |v|/E.
164 B Electron mobility is greater than hole mobility.
165 C Higher doping leads to more scattering, reducing mobility.
166 B p-type: σ ∝ µp, n-type: σ ∝ µn; ratio = µp/µn = 1/3.
167 C From graph slope, ∆V/∆x = 1 V/0.1 µm = 10 kV/cm.
168 A J = q·n·µn·E → match value to options.
169 C Drift velocity ∝ mobility and electric field.
170 D Heating increases carrier generation → decreases resistance.
171 C σi = q·ni·(µn + µp).
172 A ρ = 1/σ → σ = 1/5 → Nd = σ / (qµn) = 0.2 / (1.6e–19·1350) ≈ 2.86e14 cm■³.
173 C Use J = σE, σ = qnµn → solve for n from J = I/A = 0.1 / 1e–5 = 1e4 A/cm².
174 A σ = q·ni·(µn + µp) = 1.6e–19·1.5e10·(1350 + 450) = 4.32e–6 S/cm.