Dual Defect-Passivation Using Phthalocyanine Esi
Dual Defect-Passivation Using Phthalocyanine Esi
Supporting Information
for Small, DOI: 10.1002/smll.202005216
Supporting Information
Dual defect-passivation using phthalocyanine for enhanced efficiency and stability of
perovskite solar cells Title
Qikun Hu,# Ehsan Rezaee,# Wangping Xu,# Rajendran Ramachandran, Qian Chen, Hu Xu,
Tarek EL-Assaad, Dominic V. McGrath,* Zong-Xiang Xu*
Experimental
Materials
Unless specified otherwise, all materials were used as received. Organic solvents and
Ti(iOPr)4 and ZnCl2 were purchased from Sigma-Aldrich. CH3NH3I and PbI2 were purchased
Synthesis of Phthalocyanine
The synthesis of NP-SC6 -TiOPc and NP-SC6 -ZnPc was carried out according to the reported
NP-SC 6 -TiOPc and NP-SC6 -ZnPc was prepared under templated cyclization conditions in the
Synthesis of 3,6-bis(4’-methylphenylsulfonyloxy)phthalonitrile
As mixture of p-toluenesulfonyl chloride (5.1 g, 27 mmol), 2,3-dicyanohydroquinone (2.1 g,
13 mmol), potassium carbonate (6.9 g, 50 mmol) and acetone (15 mL) was heated to reflux
for 3 h. The reaction mixture was poured into 70 mL DI H2O and stirred for 30 min. A light
brown solid was isolated by filtration and washed with H2 O (4 × 30 mL). A soluble gray
(500 MHz, CDCl3 ) δ 7.85-7.82 (m, 4H), 7.81 (s, 2H), 7.43-7.40 (m, 4H), 2.50(s, 6H).
Synthesis of 3,6-bis(hexylthio)phthalonitrile
A mixture of hexane-1-thiol (3.5g, 30 mmol), K2CO 3 (5.5 g, 40 mmol) and DMSO (100 mL)
the reaction mixture was maintained at RT for 12 h. The crude reaction mixture was diluted
with H2O (200 mL) and extracted into chloroform (2 × 100 mL) and dichloromethane (2 ×
150 mL). The combined organic extracts were further washed with 5% Na2CO3 (2 × 100 mL)
and H2O (2 × 100 mL). After removal of solvent under reduced pressure, a yellow solid was
collected. Purification of the yellow solid was conducted by recrystallization from EtOH (20
NMR (500 MHz, CDCl3) δ 7.49 (s, 2H), 3.03-3.00 (t, 4H), 1.71-1.65 (m, 4H), 1.48-1.42 (m,
g, 1.4 mmol) in 1-pentanol (2.8 mL), Ti(iOPr)4 (0.077 g, 0.27 mmol) was added. The mixture
was maintained at reflux (150 °C) for 12 h. The mixture was allowed to cool to room
temperature and concentrated under reduced pressure. The residue was dissolved in CHCl3 (3
(64 mg, 17%): UV-Vis (λmax, nm) 850 nm; Elemental analysis calcd. (%) for
g, 1.4 mmol) in 1-pentanol (2.8 mL), ZnCl2 (0.033 g, 0.27 mmol) was added. The mixture
was maintained at reflux (150 °C) for 12 h. The mixture was allowed to cool to room
temperature and concentrated under reduced pressure. The residue was dissolved in CHCl3 (3
%): UV-Vis (λ max, nm) 833 nm; Elemental analysis calcd. (%) for C80H112 N8S8Zn: C, 63.79;
Structure Characterization
X-ray diffraction patterns of the films deposited on FTO substrates were recorded using a
CuKα1, 2 X-ray beams were fixed at a grazing incident angle (θ) of 2.000°. The detector was
independently moved to collect diffraction data in the 2θ range (3–30°) with a step size of
0.02° (2θ) at a fixed speed of 1 s/step. The morphologies of the thin-film samples were
Instruments). The excitation light wavelength was 475 nm and the samples were various
perovskites. Time-resolved photoluminescence decay curves were acquired for the perovskite
films on FTO glass and for the perovskite/FTO glass stack (excitation using a
performed using a Drop Shape Analyzer (DSA 25S, KRUSS). The morphology and
elemental mapping of the prepared samples were analyzed with the Scanning Electron
Microscope (SEM, Zeiss Merlin). The chemical states of the elements in samples were
identified with the X-ray photoelectron spectroscopy (XPS, ESCALB 250Xi) with Mg K
radiation. The highest occupied molecular orbital energy (HOMO) level of NP-SC6 -ZnPc
was measured by an ionization energy measurement system with the ionization photoelectron
spectrometer model (IPS-4). The UV-vis spectrum of NP-SC6 -ZnPc film on FTO was
isopropanol, sequentially. SnO2 based electron transporting layer (ETL) preparation was
reported as before.[2] The as-deposited ETLs were then treated with UV-Ozone for 20 min.
Finally, the ETL substrates were transferred to the glove box (H 2O content <0.01 ppm). The
perovskite absorber layers (~ 500 nm) were deposited on the ETL by using a modified
solvent engineering method.[3] The MAPbI3 perovskite precursor solution was prepared by
dissolving MAI (1.0 M) and PbI2 (1.0 M) in mixed solvent consisting of 632 μL DMF and 71
substrate at 4000 rpm for 20 s in glove box, then a 0.3 mL antisolvent of chlorobenzene or
mg/mL) was quickly dropped when ten seconds passed. Finally, the substrate was heated at
65 °C for two minutes, then 100 °C for ten minutes. The thickness of the photosensitive layer
was measured using an Ambios Technology (Santa Cruz, CA) XP-2 profilometer. The
chlorobenzene. Then, the doped spiro-MeOTAD layer was deposited on top of the perovskite
layer by spin coating at 3000 rpm for 30 s. Finally, a 100 nm Au electrode was thermally
evaporated under high vacuum (<10−4 Pa) on top of the device. The active area of the device
was 0.11 cm2 , defined by the aperture area of the mask. The as fabricated perovskite samples
or PSC devices were denoted as MAPbI3 , MAPbI3/TiOPc and MAPbI 3/ZnPc for using
scan speed of 100 mV s-1 . The simulated AM 1.5G sunlight with an irradiance equivalent to
100 mW cm-2 was generated by an Oriel Solar 3A solar simulator and the intensity was
calibrated with an VLSI standard incorporated PN 91150V Si reference cell. For the
long-term stability measurement, the as-fabricated PSC devices without encapsulation were
stored in atmosphere with relative humidity of ~75% and at room temperature exposing to
room light. After each 4 days, the photocurrent-voltage (J-V) characteristics of the devices
were measured under simulated AM 1.5G sunlight with an irradiance equivalent to 100 mW
cm-2 . Steady-state output of the photocurrent and PCE was measured with a Keithley 2400
digital source meter under a certain bias. Dark current was measured with a Keithley 2400
digital source meter without illumination. The external quantum efficiency (EQE) spectrum
was measured using a solar cell QE/EQE measurement system (Zolix Solar Cell Scan 100)
model SR830 DSP lock-in amplifier coupled with a WDG3 monochromator and a 500 W
DFT Calculations
All calculations were implemented by the Vienna Ab Initio Simulation Package (VASP).[4]
projector-augmented wave.[5] The cut-off energy was set to be 500 eV and the k-points mesh
was set to be 2 × 2 × 1 to optimize structures. The convergence threshold for the force was
set to be 0.02 eV/ Å. The slab consisting of a three-layer MAPbI3 (001) was built and the
vacuum was set to be 15 Å. The Van der Waals corrections (D3) were introduced to describe
Figure S3. AFM images of MAPbI 3 (a) before and (b) after washing by CB;
MAPbI3/NP-SC6 -TiOPc (c) before and (d) after washing by CB; MAPbI3 /NP-SC6 -ZnPc films
(e) before and (f) after washing by CB.
Figure S4. The full XPS scan survey spectra of bare Pc (left) and perovskite samples (right).
Figure S5. Deconvoluted XPS spectra of N and S of bare Pc (left) and Pc-passivated
perovskite.
Figure S6. The steady-state current output and PCE of (a) the pristine MAPbI3 and (b)
MAPbI3/NP-SC6 -ZnPc based PSCs.
Figure S7. The statistics for the photovoltaic parameters, including PCE, VOC, JSC, and FF, of
20 devices fabricated from the same batch.
Figure S8. Water droplet angle measurement stability results for PSCs based on (a) pristine
MAPbI3, (b) MAPbI3/NP-SC6 -TiOPc, and (c) MAPbI 3/NP-SC6 -ZnPc films.
Figure S9. Water resistance measurement for PSCs based on pristine MAPbI3,
MAPbI3/NP-SC6-TiOPc, and MAPbI3 /NP-SC6 -ZnPc films.
Figure S10. Thermal stability results for PSCs based on (a) pristine MAPbI3 , (b)
MAPbI3/NP-SC6 -TiOPc, and (c) MAPbI 3/NP-SC6 -ZnPc films.
Table S1. Summary of the parameters from fitting to the TRPL measurement data.
Perovskite A1 τ1 (ns) A2 τ2 (ns) τavg (ns)*
𝐴𝑖 𝜏𝑖2
*𝜏𝑎𝑣𝑔 =
𝐴𝑖 𝜏𝑖
References
[1] Q. Hu, E. Rezaee, M. Li, Q. Chen, Y. Cao, M. Mayukh, D. V. McGrath, Z.-X. Xu, ACS
[2] Q. Dong, J. Li, Y. Shi, M. Chen, L. K. Ono, K. Zhou, C. Zhang, Y. Qi, Y. Zhou, N. P.
[3] Q. Hu, E. Rezaee, Q. Dong, H. Shan, Q. Chen, L. Wang, B. Liu, J. H. Pan, Z. X. Xu,