SE85XX

40V/2.6μA/200mA，Ultra-Low-Iq, Low Dropout LDO

General Description Features

SE85XX series is designed for power-sensitive  Ultra Low Quiescent Current: 2.6μA(Typ.)
applications. It includes a precision and high  Wide Operating Voltage: VOUT+1V to 35V
voltage input stage, an ultra-low-power bias current  High output current: ≥200mA
branch, and results in a ultra-low-power and  System startup with no overshoot
low-dropout linear regulator.  Short circuit protection is designed with no
The SE85XX operates from an input voltage of overshoot
VOUT+1V to 35V, consumes only 2.6μA of quiescent  UVLO 1.8V
current, and offers 1% initial accuracy and low dropout  Low Dropout Voltage
voltage, 300mV typical at 100mA.  High Accuracy Output Voltage: ±1%
SE85XX has 1.8V，2.5V，3.0V，3.3V，3.6V，  Excellent power / load transient response
4.0V，4.2V，5.0V fixed voltage versions.  Low temperature coefficient: ±100ppm/℃
Other features include short-circuit protection  Thermal and Short-Circuit Protection
and thermal shutdown.  SOT-89 and SOT-23 package
 Customer Pin Assignments are available

Applications
 Battery-powered Smoke sensor
 Smoke sensor
 Microcontrollers
 Household appliances and instruments

Application Diagram

Rev1.0
Preliminary and all contents are subject to change without prior notice.
© Seaward Electronics, Inc., 2006. • www.seawardinc.com.cn • Page 1
 SE85XX
40V/2.6μA/200mA，Ultra-Low-Iq, Low Dropout LDO
Pin Configuration
(Customer pin assignments are available)

Absolute Maximum Rating

Symbol Parameter Value Units
VIN Input Supply Voltage 40
V
VOUT Output Voltage 6
TA Operating Temperature -40----105
TSTG Storage Temperature -40---150
°C
TJ Maximum Junction Temperature 150
TLEAD Lead Temperature (Soldering) 10 seconds 260
165(SOT89)
JA Thermal Resistance, Junction-to-Ambient ℃/W
230(SOT23)
750 (SOT89)
PD Power Consumption mW
250 (SOT23)

Ordering Information

Rev1.0
Preliminary and all contents are subject to change without prior notice.
© Seaward Electronics, Inc., 2006. • www.seawardinc.com.cn • Page 2
 SE85XX
40V/2.6μA/200mA，Ultra-Low-Iq, Low Dropout LDO

Operating Rating
Parameter Value Units
Operating Temperature -20℃～85 ℃
Storage Temperature -40℃～125 ℃
Lead Temperature (Soldering) 10 seconds 260±5 ℃

Block Diagram

Electrical Characteristics
（VIN=VOUT+ 1V ； Tj=25℃ unless otherwise noted.）
Symbol Parameter Conditions Min Typ Max Unit
VIN Input Supply Voltage 1.8 36 V
-1% 1% V
VOUT Output Voltage Accuracy IOUT=10mA
-2% 2% V
IQ Quiescent Current 2.6 6.0 μA
IOUT Output Current 200 250 mA
IOUT=10mA
30 mV
ΔVOUT= - VOUT *2%
IOUT=100mA
VDROP Dropout Voltage 300 mV
ΔVOUT= - VOUT *2%
IOUT=200mA
600 mV
ΔVOUT= - VOUT *2%
VLR Load Regulation 1mA ≤ IOUT≤ 100mA 40 mV
IOUT=1mA,
VSR Line Regulation 0.2 %/V
VIN=(VOUT +1V) to 30V
Rev1.0
Preliminary and all contents are subject to change without prior notice.
© Seaward Electronics, Inc., 2006. • www.seawardinc.com.cn • Page 3
 SE85XX
40V/2.6μA/200mA，Ultra-Low-Iq, Low Dropout LDO
VIN=(VOUT +1V) to 30V
ILIMIT Current Limit 450 mA
RLOAD=VOUT /1A
TSHDN Thermal Protection 125 ℃
Output Voltage IOUT=10mA
TCVOUT ±100 ppm/℃
Temperature Coefficient -40℃≤TAMB≤100℃

Typical Performance Characteristics

VOUT：3.3V VOUT：5.0V

VOUT：3.3V VOUT：3.3V

Rev1.0
Preliminary and all contents are subject to change without prior notice.
© Seaward Electronics, Inc., 2006. • www.seawardinc.com.cn • Page 4
 SE85XX
40V/2.6μA/200mA，Ultra-Low-Iq, Low Dropout LDO

VOUT：3.3V VOUT：5.0V

Rev1.0
Preliminary and all contents are subject to change without prior notice.
© Seaward Electronics, Inc., 2006. • www.seawardinc.com.cn • Page 5
 SE85XX
40V/2.6μA/200mA，Ultra-Low-Iq, Low Dropout LDO

Outline Drawing for SOT-23-3

Rev1.0
Preliminary and all contents are subject to change without prior notice.
© Seaward Electronics, Inc., 2006. • www.seawardinc.com.cn • Page 6
 SE85XX
40V/2.6μA/200mA，Ultra-Low-Iq, Low Dropout LDO

Outline Drawing for SOT-89

DIM E NS IONS
INCHE S MM
DIM N
SOT-89 M IN MAX M IN MAX
A
C
A 0 .1 7 3 0 .1 8 1 4 .4 0 0 4 .6 0 0
D J
B 0 .1 5 9 0 .1 6 7 4 .0 5 0 4 .2 5 0
K C 0 .0 6 7 0 .0 7 5 1 .7 0 0 1 .9 0 0
M

L D 0 .0 5 1 0 .0 5 9 1 .3 0 0 1 .5 0 0
E 0 .0 9 4 0 .1 0 2 2 .4 0 0 2 .6 0 0
F 0 .0 3 5 0 .0 4 7 0 .8 9 0 1 .2 0 0
E
B

G 0 .1 1 8 R EF 3 .0 0 R EF
H 0 .0 5 9 R EF 1 .5 0 R EF
I 0 .0 1 6 0 .0 2 0 0 .4 0 0 0 .5 2 0
F

G
J 0 .0 5 5 0 .0 6 3 1 .4 0 0 1 .6 0 0
H
I
K 0 .0 1 4 0 .0 1 6 0 .3 5 0 0 .4 1 0
L 1 0 °TYP 1 0 °TYP
M 0 .0 2 8 R EF 0 .7 0 R EF

Outline Drawing for SOT-23-5

B
DIMENSIONS
H
INCHES MM
DIMN
D MIN MAX MIN MAX
F
A 0.110 0.120 2.80 3.05
A
E B 0.059 0.070 1.50 1.75
C 0.036 0.051 0.90 1.30
D 0.014 0.020 0.35 0.50
E - 0.037 - 0.95
F - 0.075 - 1.90
C H - 0.006 - 0.15
J
J 0.0035 0.008 0.090 0.20
K 0.102 0.118 2.60 3.00

Rev1.0
Preliminary and all contents are subject to change without prior notice.
© Seaward Electronics, Inc., 2006. • www.seawardinc.com.cn • Page 7
 SE85XX
40V/2.6μA/200mA，Ultra-Low-Iq, Low Dropout LDO

Customer Support
Seaward Electronics Incorporated – China
Section B, 2nd Floor, ShangDi Scientific Office Complex, #22 XinXi Road
Haidian District, Beijing 100085, China
Tel: 86-10-8289-5700/01/05
Fax: 86-10-8289-5706
Seaward Electronics Corporation – Taiwan
2F, #181, Sec. 3, Minquan East Rd,
Taipei, Taiwan R.O.C
Tel: 886-2-2712-0307
Fax: 886-2-2712-0191
Seaward Electronics Incorporated – North America
1512 Centre Pointe Dr.
Milpitas, CA95035, USA
Tel: 1-408-821-6600

Last Updated - 6/13/2018

Rev1.0
Preliminary and all contents are subject to change without prior notice.
© Seaward Electronics, Inc., 2006. • www.seawardinc.com.cn • Page 8