DATA SHEET

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Darlington Complementary DARLINGTON

10 AMPERE
Silicon Power Transistors COMPLEMENTARY SILICON
POWER TRANSISTORS
BDX33B, BDX33C (NPN) 80−100 VOLTS, 65 WATTS
BDX34B, BDX34C (PNP)
These devices are designed for general purpose and low speed
switching applications.

Features
• High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0
• Collector−Emitter Sustaining Voltage at 100 mAdc
VCEO(sus) = 80 Vdc (min) − BDX33B, BDX334B
= 100 Vdc (min) − BDX33C, BDX334C
1
• Low Collector−Emitter Saturation Voltage 2
3
VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc
TO−220
− BDX33B, 33C/34B, 34C CASE 221A
• Monolithic Construction with Build−In Base−Emitter Shunt Resistors STYLE 1
• These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS MARKING DIAGRAM

Rating Symbol Value Unit
Collector−Emitter Voltage VCEO Vdc
BDX33B, BDX34B 80
BDX33C, BDX34C 100 BDX3xyG
Collector−Base Voltage VCB Vdc AY WW
BDX33B, BDX34B 80
BDX33C, BDX34C 100
Emitter−Base Voltage VEB 5.0 Vdc
Collector Current IC 10 Adc BDX3xy = Device Code
Continuous 15 x = 3 or 4
Peak y = B or C
Base Current IB 0.25 Adc A = Assembly Location
Y = Year
Total Device Dissipation @ TC = 25°C PD 70 W WW = Work Week
Derate above 25°C 0.56 W/°C G = Pb−Free Package
Operating and Storage Junction TJ, Tstg −65 to +150 °C
Temperature Range
Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected. See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.

THERMAL CHARACTERISTICS NOTE: Some of the devices on this data sheet have been
DISCONTINUED. Please refer to the table on page 5.
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 1.78 °C/W

*For additional information on our Pb−Free strategy and soldering details, please
download the onsemi Soldering and Mounting Techniques Reference Manual,
SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2014 1 Publication Order Number:

November, 2024 − Rev. 15 BDX33B/D
 BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)

80

PD, POWER DISSIPATION (WATTS)

60

40

20

0
0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1) VCEO(sus) Vdc
(IC = 100 mAdc, IB = 0) BDX33B/BDX34B 80 −
BDX33C/BDX34C 100 −
Collector−Emitter Sustaining Voltage (Note 1) VCER(sus) Vdc
(IC = 100 mAdc, IB = 0, RBE = 100) BDX33B/BDX34B 80 −
BDX33C/BDX33C 100 −
Collector−Emitter Sustaining Voltage (Note 1) VCEX(sus) Vdc
(IC = 100 mAdc, IB = 0, VBE = 1.5 Vdc) BDX33B/BDX34B 80 −
BDX33C/BDX34C 100 −
Collector Cutoff Current ICEO mAdc
(VCE = 1/2 rated VCEO, IB = 0) TC = 25°C − 0.5
TC = 100°C − 10
Collector Cutoff Current ICBO mAdc
(VCB = rated VCBO, IE = 0) TC = 25°C − 1.0
TC = 100°C − 5.0
Emitter Cutoff Current IEBO − 10 mAdc
(VBE = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS
DC Current Gain (Note 1) hFE 750 − −
(IC = 3.0 Adc, VCE = 3.0 Vdc) BDX33B, 33C/34B, 34C

Collector−Emitter Saturation Voltage VCE(sat) − 2.5 Vdc

(IC = 3.0 Adc, IB = 6.0 mAdc) BDX33B, 33C/34B, 34C

Base−Emitter On Voltage VBE(on) − 2.5 Vdc

(IC = 3.0 Adc, VCE = 3.0 Vdc) BDX33B, 33C/34B, 34C

Diode Forward Voltage VF − 4.0 Vdc

(IC = 8.0 Adc)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2. Pulse Test non repetitive: Pulse Width = 0.25 seconds.

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 BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)

1.0

THERMAL RESISTANCE (NORMALIZED)

0.7 D = 0.5
0.5
r(t) EFFECTIVE TRANSIENT

0.3 0.2
0.2
0.1
P(pk)
0.1 0.05 RqJC(t) = r(t) RqJC
0.07 0.02 RqJC = 1.92°C/W
0.05 D CURVES APPLY FOR POWER
t1 SINGLE PULSE TRAIN SHOWN
0.03 SINGLE PULSE t2 PULSE READ TIME AT t1
0.02 0.01
DUTY CYCLE, D = t1/t2 TJ(pk) - TC = P(pk) RqJC(t)

0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000
t, TIME OR PULSE WIDTH (ms)
Figure 1. Thermal Response

20 100 20 100
ms ms
10 500 ms 10 500 ms

IC, COLLECTOR CURRENT (AMP)

5.0 ms 5.0 ms
IC, COLLECTOR CURRENT (AMP)

5.0 5.0
1.0 ms 1.0 ms
TC = 25°C dc TC = 25°C dc
2.0 2.0
1.0 1.0
BONDING WIRE LIMITED BONDING WIRE LIMITED
0.5 THERMALLY LIMITED @ TC = 25°C 0.5 THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE) (SINGLE PULSE)
0.2 0.2 SECOND BREAKDOWN LIMITED
SECOND BREAKDOWN LIMITED
0.1 CURVES APPLY BELOW RATED VCEO 0.1 CURVES APPLY BELOW RATED VCEO
0.05 BDX34B 0.05 BDX33B
BDX34C BDX33C
0.02 0.02
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. Active−Region Safe Operating Area

There are two limitations on the power handling ability of TJ(pk) = 150°C; TC is variable depending on conditions.
a transistor: average junction temperature and second Second breakdown pulse limits are valid for duty cycles to
breakdown. Safe operating area curves indicate IC − VCE limits 10% provided TJ(pk) = 150°C. TJ(pk) may be calculated from
of the transistor that must be observed for reliable operation, the data in Figure 4. At high case temperatures, thermal
i.e., the transistor must not be subjected to greater dissipation limitations will reduce the power that can be handled to values
than the curves indicate. The data of Figure 3 is based on less than the limitations imposed by second breakdown.

10,000 300
TJ = 25°C
hFE, SMALL-SIGNAL CURRENT GAIN

5000
3000 200
2000
C, CAPACITANCE (pF)

1000

500 TJ = 25°C
VCE = 4.0 Vdc 100 Cob
300
200 IC = 3.0 Adc
70 Cib
100
50 50
30 PNP PNP
20 NPN NPN

10 30
1.0 2.0 5.0 10 20 50 100 200 500 1000 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
f, FREQUENCY (kHz) VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Small−Signal Current Gain Figure 4. Capacitance

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 BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)

NPN PNP
BDX33B, 33C BDX34B, 34C

20,000 20,000
VCE = 4.0 V VCE = 4.0 V
10,000 10,000
hFE, DC CURRENT GAIN

hFE, DC CURRENT GAIN

5000 TJ = 150°C 5000 TJ = 150°C
3000 3000
2000 2000 25°C
25°C
1000 1000
-55°C -55°C
500 500

300 300
200 200
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 5. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

3.0 3.0
TJ = 25°C TJ = 25°C

2.6 2.6
IC = 2.0 A 4.0 A 6.0 A IC = 2.0 A 4.0 A 6.0 A

2.2 2.2

1.8 1.8

1.4 1.4

1.0 1.0
0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 6. Collector Saturation Region

3.0 3.0
TJ = 25°C TJ = 25°C

2.5 2.5
V, VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

2.0 2.0

1.5 VBE(sat) @ IC/IB = 250 1.5 VBE @ VCE = 4.0 V

VBE @ VCE = 4.0 V VBE(sat) @ IC/IB = 250

1.0 1.0
VCE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
0.5 0.5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)

Figure 7. “On” Voltages

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 BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)

ORDERING INFORMATION
Device Package Shipping†
BDX33BG TO−220
50 Units / Rail
(Pb−Free)

BDX33CG TO−220
50 Units / Rail
(Pb−Free)

DISCONTINUED (Note NO TAG)

BDX34BG TO−220
50 Units / Rail
(Pb−Free)

BDX34CG TO−220
50 Units / Rail
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
3. DISCONTINUED: These devices are not recommended for new design. Please contact your onsemi representative for information. The
most current information on these devices may be available on www.onsemi.com.

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 MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−220−3 10.10x15.12x4.45, 2.54P

CASE 221A
ISSUE AL
DATE 05 FEB 2025

STYLE 1: STYLE 2: STYLE 3: STYLE 4:

PIN 1. BASE PIN 1. BASE PIN 1. CATHODE PIN 1. MAIN TERMINAL 1
2. COLLECTOR 2. EMITTER 2. ANODE 2. MAIN TERMINAL 2
3. EMITTER 3. COLLECTOR 3. GATE 3. GATE
4. COLLECTOR 4. EMITTER 4. ANODE 4. MAIN TERMINAL 2

STYLE 5: STYLE 6: STYLE 7: STYLE 8:

PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE
2. DRAIN 2. CATHODE 2. ANODE 2. ANODE
3. SOURCE 3. ANODE 3. CATHODE 3. EXTERNAL TRIP/DELAY
4. DRAIN 4. CATHODE 4. ANODE 4. ANODE

STYLE 9: STYLE 10: STYLE 11: STYLE 12:

PIN 1. GATE PIN 1. GATE PIN 1. DRAIN PIN 1. MAIN TERMINAL 1
2. COLLECTOR 2. SOURCE 2. SOURCE 2. MAIN TERMINAL 2
3. EMITTER 3. DRAIN 3. GATE 3. GATE
4. COLLECTOR 4. SOURCE 4. SOURCE 4. NOT CONNECTED

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98ASB42148B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: TO−220−3 10.10x15.12x4.45, 2.54P PAGE 1 OF 1

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