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Application Note

78K0S/Kx1+
8-Bit Single-Chip Microcontrollers
TM
EEPROM Emulation

μPD78F9200 μPD78F9500
μPD78F9201 μPD78F9501
μPD78F9202 μPD78F9502
μPD78F9210 μPD78F9510
μPD78F9211 μPD78F9511
μPD78F9212 μPD78F9512
μPD78F9221
μPD78F9222
μPD78F9224
μPD78F9232
μPD78F9234
Document No. U17379EJ3V0AN00 (3rd edition)
Date Published September 2009 NS

2005
Printed in Japan
[MEMO]

2 Application Note U17379EJ3V0AN

 NOTES FOR CMOS DEVICES

(1) VOLTAGE APPLICATION WAVEFORM AT INPUT PIN: Waveform distortion due to input noise or a reflected
wave may cause malfunction. If the input of the CMOS device stays in the area between VIL (MAX) and VIH
(MIN) due to noise, etc., the device may malfunction. Take care to prevent chattering noise from entering the
device when the input level is fixed, and also in the transition period when the input level passes through the
area between VIL (MAX) and VIH (MIN).
(2) HANDLING OF UNUSED INPUT PINS: Unconnected CMOS device inputs can be cause of malfunction. If
an input pin is unconnected, it is possible that an internal input level may be generated due to noise, etc.,
causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS
devices must be fixed high or low by using pull-up or pull-down circuitry. Each unused pin should be
connected to VDD or GND via a resistor if there is a possibility that it will be an output pin. All handling
related to unused pins must be judged separately for each device and according to related specifications
governing the device.
(3) PRECAUTION AGAINST ESD: A strong electric field, when exposed to a MOS device, can cause destruction
of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of
static electricity as much as possible, and quickly dissipate it when it has occurred. Environmental control
must be adequate. When it is dry, a humidifier should be used. It is recommended to avoid using insulators
that easily build up static electricity. Semiconductor devices must be stored and transported in an anti-static
container, static shielding bag or conductive material. All test and measurement tools including work benches
and floors should be grounded. The operator should be grounded using a wrist strap. Semiconductor
devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with
mounted semiconductor devices.
(4) STATUS BEFORE INITIALIZATION: Power-on does not necessarily define the initial status of a MOS device.
Immediately after the power source is turned ON, devices with reset functions have not yet been initialized.
Hence, power-on does not guarantee output pin levels, I/O settings or contents of registers. A device is not
initialized until the reset signal is received. A reset operation must be executed immediately after power-on
for devices with reset functions.
(5) POWER ON/OFF SEQUENCE: In the case of a device that uses different power supplies for the internal
operation and external interface, as a rule, switch on the external power supply after switching on the internal
power supply. When switching the power supply off, as a rule, switch off the external power supply and then
the internal power supply. Use of the reverse power on/off sequences may result in the application of an
overvoltage to the internal elements of the device, causing malfunction and degradation of internal elements
due to the passage of an abnormal current. The correct power on/off sequence must be judged separately for
each device and according to related specifications governing the device.
(6) INPUT OF SIGNAL DURING POWER OFF STATE : Do not input signals or an I/O pull-up power supply while
the device is not powered. The current injection that results from input of such a signal or I/O pull-up power
supply may cause malfunction and the abnormal current that passes in the device at this time may cause
degradation of internal elements. Input of signals during the power off state must be judged separately for
each device and according to related specifications governing the device.

Application Note U17379EJ3V0AN 3

EEPROM is a trademark of NEC Electronics Corporation.
SuperFlash is a registered trademark of Silicon Storage Technology, Inc. in several countries including the
United States and Japan.

Caution: This product uses SuperFlash® technology licensed from Silicon Storage Technology, Inc.

• The information in this document is current as of September, 2009. The information is subject to change without notice. For
actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date
specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with
an NEC Electronics sales representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC
Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the
use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual
property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in
semiconductor product operation and application examples. The incorporation of these circuits, software and information in
the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes
no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and
information.
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree
and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property
or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient
safety measures in their design, such as redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The
"Specific" quality grade applies only to NEC Electronics products developed based on a customer-designated "quality
assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its
quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in
a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual
equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-
crime systems, safety equipment and medical equipment (not specifically designed for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and
medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data
sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC
Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness
to support a given application.
(Note 1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-
owned subsidiaries.
(Note 2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined
above).
(M8E0909)

4 Application Note U17379EJ3V0AN

 INTRODUCTION

Target readers This application note is intended for users who understand the functions of the
78K0S/Kx1+ with on-chip flash memory and who will use this product to design
application systems.

Purpose The purpose of this application note is to inform users concerning the use of the
78K0S/Kx1+ flash memory self programming functions, and the method for storing data
(writing constant data using application) during EEPROM emulation of flash memory.

Organization This manual is generally organized into the following sections.

• EEPROM emulation function
• EEPROM emulation program

How to read this manual It is assumed that the reader of this manual has general knowledge in the fields of
electrical engineering, logic circuits, and microcontrollers.
† To learn more about the 78K0S/Kx1+’s hardware functions:
→ See the user’s manual of each 78K0S/Kx1+ product.
† To learn more about the 78K0S/Kx1+’s flash memory self programming functions:
→ See the flash memory chapter in the user’s manual for each 78K0S/Kx1+ product.
† To gain a general understanding of functions:
→ Read this manual in the order of the CONTENTS. The mark “<R>” shows major
revised points. The revised points can be easily searched by copying an “<R>” in
the PDF file and specifying it in the “Find what:” field.

Convention Data significance: Higher digits on the left and lower digits on the right
Active low representation: xxx (overscore over pin or signal name)
Note: Footnote for item marked with Note in the text
Caution: Information requiring particular attention
Remark: Supplementary information
Numeral representation: Binary..................xxxx or xxxxB
Decimal ...............xxxx
Hexadecimal .......xxxxH

Related Documents The related documents indicated in this publication may include preliminary versions.
However, preliminary versions are not marked as such.

Document Name Document No.

78K0/KB1+ User’s Manual U17446E

78K0/KA1+ User’s Manual U16898E
78K0/KY1+ User’s Manual U16994E
78K0/KU1+ User’s Manual U18172E
78K0S/Kx1+ EEPROM Emulation Application Note This manual
78K/0S Series Instructions User’s Manual U11047E

Application Note U17379EJ3V0AN 5

 CONTENTS

CHAPTER 1 OVERVIEW OF FLASH MEMORY SELF PROGRAMMING.......................................... 8

1.1 Self-Programmable Flash Memory Area ........................................................................................ 8

CHAPTER 2 EEPROM EMULATION FUNCTION (FIXED-LENGTH SINGLE-DATA METHOD)............ 9

2.1 Main Specifications for EEPROM Emulation................................................................................. 9
2.1.1 EEPROM emulation data block............................................................................................................ 11
2.1.2 Data structure ...................................................................................................................................... 11
2.1.3 Valid and invalid flags .......................................................................................................................... 14
2.2 EEPROM Emulation Program Execution Conditions ................................................................. 17
2.3 How to Get the Sample Program .................................................................................................. 17

CHAPTER 3 EEPROM EMULATION PROGRAM (FIXED-LENGTH SINGLE-DATA METHOD,

ASSEMBLYLANGUAGE).................................................................................................. 18
3.1 Configuration of EEPROM Emulation Program .......................................................................... 18
3.2 Resources Used by EEPROM Emulation Program..................................................................... 18
3.3 Use of EEPROM Emulation Program ........................................................................................... 19
3.3.1 Initial values for user settings............................................................................................................... 19
3.3.2 Calling of user processing for EEPROM emulation.............................................................................. 20
3.4 Description of EEPROM Emulation Program .............................................................................. 22
3.4.1 User access processing for EEPROM emulation................................................................................. 22
3.4.2 EEPROM emulation control processing (for internal processing) ........................................................ 24
3.4.3 Flash memory control processing ........................................................................................................ 26
3.5 Flowchart of EEPROM Emulation Program................................................................................. 29
3.5.1 Flowcharts of EEPROM emulation access processings ...................................................................... 29
3.5.2 Flowcharts of EEPROM emulation control processings....................................................................... 31
3.6 List of EEPROM Emulation Processings..................................................................................... 36

CHAPTER 4 EEPROM EMULATION FUNCTION (FIXED-LENGTH MULTIPLE-DATA METHOD) ..... 37

4.1 Main Specifications for EEPROM Emulation............................................................................... 37
4.1.1 EEPROM emulation data block............................................................................................................ 39
4.1.2 Data structure ...................................................................................................................................... 39
4.1.3 Valid and invalid flags .......................................................................................................................... 42
4.2 EEPROM Emulation Program Execution Conditions ................................................................. 45
4.3 How to Get the Sample Program .................................................................................................. 45

CHAPTER 5 EEPROM EMULATION PROGRAM (FIXED-LENGTH MULTIPLE-DATA METHOD,

ASSEMBLY LANGUAGE)................................................................................................. 46
5.1 Configuration of EEPROM Emulation Program .......................................................................... 46
5.2 Resources Used by EEPROM Emulation Program..................................................................... 46
5.3 Use of EEPROM Emulation Program ........................................................................................... 47
5.3.1 Initial values for user settings............................................................................................................... 47
5.3.2 Calling of user processing for EEPROM emulation.............................................................................. 48
5.4 Description of EEPROM Emulation Program .............................................................................. 50

6 Application Note U17379EJ3V0AN

 5.4.1 User access processing for EEPROM emulation..................................................................................50
5.4.2 EEPROM emulation control processing (for internal processing) .........................................................52
5.4.3 Flash memory control processing .........................................................................................................54
5.5 Flowchart of EEPROM Emulation Program................................................................................. 57
5.5.1 Flowcharts of EEPROM emulation access processings .......................................................................57
5.5.2 Flowcharts of EEPROM emulation control processings........................................................................59
5.6 List of EEPROM Emulation Processings..................................................................................... 65

APPENDIX A REVISION HISTORY ........................................................................................................ 66

A.1 Major Revisions in This Edition ................................................................................................... 66
A.2 Revision History of Preceding Editions...................................................................................... 67

Application Note U17379EJ3V0AN 7

 CHAPTER 1 OVERVIEW OF FLASH MEMORY SELF PROGRAMMING

The 78K0S/Kx1+ enables writing from an application program to flash memory (i.e., “flash memory self
programming”).
This application note describes how to store (reading or writing as with EEPROM) any data to the flash memory by
using the self programming function.

Remark For a more detailed description of flash memory self programming, see the flash memory chapter in the
user’s manual for each 78K0S/Kx1+ products.

1.1 Self-Programmable Flash Memory Area

The area that is used for erasing, blank checks, and verification during flash memory control operations is specified
in block units. The block numbers that can be specified are listed in Figure 1-1.

Caution Any areas other than the product’s flash memory area cannot be accessed.

Figure 1-1. Allocation of Block Numbers

1F00H Block 31 (256 bytes)

1E00H Block 30 (256 bytes)
1D00H Block 29 (256 bytes)
1C00H Block 28 (256 bytes)
1B00H Block 27 (256 bytes)
1A00H Block 26 (256 bytes)
1900H Block 25 (256 bytes)
1800H Block 24 (256 bytes)
1700H Block 23 (256 bytes)
1600H Block 22 (256 bytes)
1500H Block 21 (256 bytes)
1400H Block 20 (256 bytes)
1300H Block 19 (256 bytes)
1200H Block 18 (256 bytes)
1100H Block 17 (256 bytes)
1000H Block 16 (256 bytes)
0F00H Block 15 (256 bytes) 0F00H Block 15 (256 bytes)
0E00H Block 14 (256 bytes) 0E00H Block 14 (256 bytes)
0D00H Block 13 (256 bytes) 0D00H Block 13 (256 bytes)
0C00H Block 12 (256 bytes) 0C00H Block 12 (256 bytes)
0B00H Block 11 (256 bytes) 0B00H Block 11 (256 bytes)
0A00H Block 10 (256 bytes) 0A00H Block 10 (256 bytes)
0900H Block 9 (256 bytes) 0900H Block 9 (256 bytes)
0800H Block 8 (256 bytes) 0800H Block 8 (256 bytes)
0700H Block 7 (256 bytes) 0700H Block 7 (256 bytes) 0700H Block 7 (256 bytes)
0600H Block 6 (256 bytes) 0600H Block 6 (256 bytes) 0600H Block 6 (256 bytes)
0500H Block 5 (256 bytes) 0500H Block 5 (256 bytes) 0500H Block 5 (256 bytes)
0400H Block 4 (256 bytes) 0400H Block 4 (256 bytes) 0400H Block 4 (256 bytes)
0300H Block 3 (256 bytes) 0300H Block 3 (256 bytes) 0300H Block 3 (256 bytes) 0300H Block 3 (256 bytes)
0200H Block 2 (256 bytes) 0200H Block 2 (256 bytes) 0200H Block 2 (256 bytes) 0200H Block 2 (256 bytes)
0100H Block 1 (256 bytes) 0100H Block 1 (256 bytes) 0100H Block 1 (256 bytes) 0100H Block 1 (256 bytes)
0000H Block 0 (256 bytes) 0000H Block 0 (256 bytes) 0000H Block 0 (256 bytes) 0000H Block 0 (256 bytes)
1 KB 2 KB 4 KB 8 KB

8 Application Note U17379EJ3V0AN

 CHAPTER 2 EEPROM EMULATION FUNCTION (FIXED-LENGTH SINGLE-DATA METHOD)

2.1 Main Specifications for EEPROM Emulation

EEPROM emulation is a function that is used to use a portion of the flash memory as rewritable data ROM, by
using the self programming function of the flash memory. The sample program can be used in combination with a
user program to perform read or write processing, as with EEPROM.
Note that the data length and number of rewrites is restricted, because the internal flash memory can only be
rewritten a limited number of times. Next, the basic specifications of the sample program and how to calculate the
number of rewrites is described.

Basic specifications of the sample program and how to calculate the number of rewrites

x Data format for saving

Data (2 bytes) Delimiter (1 byte)

↑ ↑
Any data Indicates the write status. Used for data search.

Remark The data size can be set, starting from 1 byte. The upper size limit depends on the RAM size.

x Number of flash memory block rewrites

(256 − 2) / 3 = 84 times (rounded to the nearest integer)

Data size
Valid or invalid flag (see 2.1.3)
Memory size of one block

x Number of blocks to be used as the EEPROM area

Two blocks (MIN.) are used.
Remark These blocks are required to prevent data losses due to problems, such as power cut-off and power
interruption during block erasure.

<R> x Number of erasures of one block

1,000 times

<R> x Maximum number of rewrites

84 ¯ 2 ¯ 1,000 = 168,000 times

Number of block erasures

Number of blocks to be used
Number of rewrites of one block

Application Note U17379EJ3V0AN 9

 CHAPTER 2 EEPROM EMULATION FUNCTION (FIXED-LENGTH SINGLE-DATA METHOD)

In the sample program, data is handled in 2-byte units, and 84 rewrites can be performed per block (256 bytes), in
combination with a delimiter (1 byte) that indicates the end of data. Furthermore, since an area of at least two
<R> consecutive blocks is required to avoid losses caused, for example, by an unexpected power supply voltage drop, a
total of 168 rewrites can be performed when two blocks are used. In addition, since a block can be erased up to
1,000 times in the sample program, data can be rewritten up to 168,000 times when two blocks are used.
At least two consecutive blocks must be secured to allocate the flash memory for storing data. These blocks can
be set freely by the user.
Figure 2-1 shows a memory map and data structure example in which the program size is 3.5 KB and blocks 14
and 15 are set to be used for EEPROM emulation.

Figure 2-1. Memory Map and Data Structure Example

(When Program Size Is 3.5 KB and Blocks 14 and 15 Are Set as Data Area for Use EEPROM Emulation)

1 byte 1 byte

FFFFH Valid/invalid flag

Special function register (SFR) Not used
FF00H FFH FFH
FEFFH Valid
Internal high-speed RAM
FE00H 00H FFH
FDFFH
Invalid
Reserved 00H 00H
0F00H 0F01H
1000H
0FFFH 0FFFH
Block 15 Block 15
0F00H
0EFFH
Block 14 0F10H
0E00H 0F00H
0DFFH Block 14
Block 13
DataNote 0E10H
Block 12
Data Data Data Data DataNote 0 E 0 0 H
Block 11
Data 1 Data 2 Delimiter
Block 10
0E03H 0E04H 0E05H

User program Block 9 2 bytes 1 byte

+
EEPROM emulation
program :

Can support up to
3.5 KB total
Block 4

Block 3

Block 2

Block 1

Block 0
0000H

Note Data is stored successively.

Remark Data structure in Figure 2-1 shows the example when used the sample program.

10 Application Note U17379EJ3V0AN

 CHAPTER 2 EEPROM EMULATION FUNCTION (FIXED-LENGTH SINGLE-DATA METHOD)

2.1.1 EEPROM emulation data block

The EEPROM emulation program requires at least two consecutive blocks for storing data.
As long as these blocks do not overlap the user program area, they can be freely set by the user.

2.1.2 Data structure

Data that is stored as part of EEPROM emulation consists of data (1-byte unit) and a delimiter (1 byte).

Figure 2-2. Data Structure

1-byte unit 1 byte

Data Delimiter

(1) Data
Any value from 00H to FFH can be set. The size can be set, starting from 1 byte. Note, however, that, the
larger the size, the more the number of rewrites will decrease.

(2) Delimiter
The delimiter’s value is fixed as 00H. Delimiters are written to enable detection of unsuccessful data writing,
such as in cases where power interruptions or other problems occurred during a data write operation.
Whether data writing has completed normally is judged by writing a delimiter area last. If a delimiter (00H)
cannot be read correctly, it is likely that a problem will occur when writing data, so the corresponding data is
not used.
If a search finds an abnormal delimiter in the latest data, the data written before that data, having a normal
delimiter, is read as the latest data.

(3) Normal flow of data storage and search operations

The normal flow of the data storage and search operations are described below (in this example, the blocks
specified for EEPROM emulation are blocks 14 and 15).

(Status 1) Block 14 is set as a valid block.

Block 14 +0
Valid flag 00H 0E00H
Invalid flag FFH 0E01H
Data FFH 0E02H

Application Note U17379EJ3V0AN 11

 CHAPTER 2 EEPROM EMULATION FUNCTION (FIXED-LENGTH SINGLE-DATA METHOD)

(Status 2) Data (11H and 22H) is written.

Block 14 +0 +1 +2
Valid flag 00H 0E00H
Invalid flag FFH 0E01H
Data 11H 22H 00H 0E02H
: FFH 0E06H

(Status 3) Data (22H and 33H) is written.

Block 14 +0 +1 +2
Valid flag 00H 0E00H
Invalid flag FFH 0E01H
Data 11H 22H 00H 0E02H
Data 22H 33H 00H 0E06H
: FFH 0E0AH

(Status 4) Data (20H and 30H) is written.

Block 14 +0 +1 +2
Valid flag 00H 0E00H
Invalid flag FFH 0E01H
Data 11H 22H 00H 0E02H
Data 22H 33H 00H 0E06H
Data 20H 30H 00H 0E0AH
: FFH 0E0EH

(Status 5) Data (20H and 30H) is read.

Block 14 +0 +1 +2
Valid flag 00H 0E00H
Invalid flag FFH 0E01H
Data a 11H 22H 00H 0E02H
Data b 22H 33H 00H 0E06H
Data c 20H 30H 00H 0E0AH
Data d FFH 0E0EH

Erase status FFH 0EFEH

How to read
<1> Since data a has a different data number, the operation goes to the next data.
<2> Since data b has a matching data number, its delimiter is checked, and since the delimiter value is 00H
(normal), data of 2 bytes is stored as the latest data, and the operation goes to the next data.
<3> Since data c has a matching data number, its delimiter is checked, and since the delimiter value is 00H
(normal), data of 2 bytes is stored as the latest data, and the operation goes to the next data.
<4> Check whether the block has been erased to the end.
<5> The read value therefore becomes the latest stored data (data c).

12 Application Note U17379EJ3V0AN

 CHAPTER 2 EEPROM EMULATION FUNCTION (FIXED-LENGTH SINGLE-DATA METHOD)

The following describes the flow of operations when a problem such as a power interruption occurs while
storing data (in this example, the blocks specified for EEPROM emulation are blocks 14 and 15).

(Status 1) Block 14 is set as a valid block.

Block 14 +0
Valid flag 00H 0E00H
Invalid flag FFH 0E01H
Data FFH 0E02H

(Status 2) Data number 1 (for data values 11H, 22H) is written.

Block 14 +0 +1 +2
Valid flag 00H 0E00H
Invalid flag FFH 0E01H
Data 11H 22H 00H 0E02H
: FFH 0E06H

(Status 3) Power interruption occurs while data number 1 (for data values 22H, 33H) is being written and
delimiter cannot be written correctly (value other than 00H is written)
Block 14 +0 +1 +2
Valid flag 00H 0E00H
Invalid flag FFH 0E01H
Data 11H 22H 00H 0E02H
Data 22H 33H 01H 0E06H
: FFH 0E0AH

(Status 4) Data number 1 is read.

Block 14 +0 +1 +2
Valid flag 00H 0E00H
Invalid flag FFH 0E01H
Data a 11H 22H 00H 0E02H
Data b 22H 33H 01H 0E06H
Data c FFH 0E0AH

Erase status FFH 0EFEH

How to read
<1> Since data a has a matching data number, its delimiter is checked, and since the delimiter value is 00H
(normal), data of 2 bytes is stored as the latest data, the operation goes to the next data.
<2> Since data b has a matching data number, its delimiter is checked, and since the delimiter value is 01H
(abnormal), the operation goes to the next data.
<3> Check whether the block has been erased to the end.
<4> The read value therefore becomes the latest stored data (data a).

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 CHAPTER 2 EEPROM EMULATION FUNCTION (FIXED-LENGTH SINGLE-DATA METHOD)

2.1.3 Valid and invalid flags

Valid and invalid flags are placed at the start of the block as a total of 2 bytes of data specified in 1-byte units. As
such, valid and invalid flags indicate the valid or invalid status of data stored in the corresponding block.
When the valid flag’s value is 00H and the invalid flag’s value is FFH, the corresponding block is valid. In all other
cases, the block is invalid.
Data is stored sequentially to a valid block, and if that block becomes full, the valid/invalid flag setting makes the
next block valid and the previously valid block invalid. In the event that the next block becomes full or a power
interruption or other problem occurs while transferring data to the next block, this procedure enables the data up to
that point to be saved in order to prevent loss of data.
The operation flow of valid and invalid flags is described below.

(Status 1) Initial status

Block n Block n + 1
Valid flag FFH Valid flag FFH
Invalid flag FFH Invalid flag FFH
Data FFH Data FFH
: : : :
Data FFH Data FFH

(Status 2) Write 00H to valid flag for block n

Block n Block n + 1
Valid flag 00H Valid flag FFH
Invalid flag FFH Invalid flag FFH
Data FFH Data FFH
: : : :
Data FFH Data FFH

(Status 3) Write data to block n

Block n Block n + 1
Valid flag 00H Valid flag FFH
Invalid flag FFH Invalid flag FFH
Data Data Data FFH
: : : :
Data FFH Data FFH

(Status 4) Data is full in block n

Block n Block n + 1
Valid flag 00H Valid flag FFH
Invalid flag FFH Invalid flag FFH
Data Data Data FFH
: : : :
Data Data Data FFH

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(Status 5) Write latest data to block n + 1

Block n Block n + 1
Valid flag 00H Valid flag FFH
Invalid flag FFH Invalid flag FFH
Data Data Data Data
: : : :
Data Data Data FFH

(Status 6) Write 00H to valid flag for block n + 1

Block n Block n + 1
Valid flag 00H Valid flag 00H
Invalid flag FFH Invalid flag FFH
Data Data Data Data
: : : :
Data Data Data FFH

(Status 7) Write 00H to invalid flag for block n

Block n Block n + 1
Valid flag 00H Valid flag 00H
Invalid flag 00H Invalid flag FFH
Data Data Data Data
: : : :
Data Data Data FFH

(Status 8) Data is full in block n + 1

Block n Block n + 1
Valid flag 00H Valid flag 00H
Invalid flag 00H Invalid flag FFH
Data Data Data Data
: : : :
Data Data Data Data

(Status 9) Erase block n

Block n Block n + 1
Valid flag FFH Valid flag 00H
Invalid flag FFH Invalid flag FFH
Data FFH Data Data
: : : :
Data FFH Data Data

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 CHAPTER 2 EEPROM EMULATION FUNCTION (FIXED-LENGTH SINGLE-DATA METHOD)

(Status 10) Write latest data to block n

Block n Block n + 1
Valid flag FFH Valid flag 00H
Invalid flag FFH Invalid flag FFH
Data Data Data Data
: : : :
Data FFH Data Data

(Status 11) Write 00H to valid flag for block n

Block n Block n + 1
Valid flag 00H Valid flag 00H
Invalid flag FFH Invalid flag FFH
Data Data Data Data
: : : :
Data FFH Data Data

(Status 12) Write 00H invalid flag for block n + 1

Block n Block n + 1
Valid flag 00H Valid flag 00H
Invalid flag FFH Invalid flag 00H
Data Data Data Data
: : : :
Data FFH Data Data

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2.2 EEPROM Emulation Program Execution Conditions

Be sure to meet all of the conditions listed in Table 2-1 before executing the EEPROM emulation program.

Table 2-1. Conditions for EEPROM Emulation Operations

Item Description
Secure stack area During EEPROM emulation program operations, the stack used by the user program is
(Assembly language: 22 bytes) inherited and used. In addition, the stack area described on the left starting from the stack
address at the start of EEPROM emulation program execution is required. See 3.2 Resources
Used by EEPROM Emulation Program for further description of this stack.
EEPROM emulation program The area must be secured as RAM dedicated to EEPROM emulation, where read and write
RAM data are stored temporarily. Secure the area described on the left in the internal high-speed
(Assembly language: 8 bytes) RAM as a data buffer.
Operation of watchdog timer Since no instruction can be executed while flash memory control processing is being
(WDT) performed during execution of the EEPROM emulation program, flash memory control
processing clears the WDT counter. At this time, set the overflow time to 10 ms or longer so
that no overflow occurs in WDT.
Prohibit reset Do not reset this microcontroller during EEPROM emulation program operations. When a reset
occurs, any data in the flash memory being accessed becomes undefined.
Prohibit power cut-off or Be sure to apply a stable voltage to the microcontroller during EEPROM emulation program
interruption operations. When a power cut-off or interruption occurs, any data in the flash memory being
accessed becomes undefined.

Cautions 1. All interrupts are disabled during write processing of the EEPROM emulation program. After
completion of EEPROM emulation program write processing, the interrupt mask status
returns to the status before the EEPROM emulation program write processing, and interrupts
are enabled.
<R> 2. When using the on-chip debug function, do not allocate areas such as the EEPROM
emulation data area to the area where the monitor program for debugging is allocated.

Example: Allocating a 2-block data area in a 4 KB flash memory product

Blocks 14 and 15 are used for the on-chip debug function, so allocate the data area to
flash memory area other than blocks 14 and 15.

Remark For details on the watchdog timer operation and prohibitions on power cut-off or interruption, refer to
Cautions on self programming function in the flash memory chapter in the user’s manual for each
78K0S/Kx1+ product.
<R> For details on the on-chip debug function, refer to the on-chip debug function chapter in the user’s
manual for each 78K0S/Kx1+ product.

<R> 2.3 How to Get the Sample Program

Download the sample program from the URL below.

http://www.necel.com/micro/en/designsupports/sampleprogram/78k0s/low_pin_count/index.html

Application Note U17379EJ3V0AN 17

 CHAPTER 3 EEPROM EMULATION PROGRAM (FIXED-LENGTH SINGLE-DATA METHOD,
ASSEMBLYLANGUAGE)

This is an application program that uses the self programming function of the flash memory in order to use the
flash memory as EEPROM memory for storing data, etc.

3.1 Configuration of EEPROM Emulation Program

Table 3-1 lists the files that comprise this program.

Table 3-1. File Configuration

File Name Function Type

EEPROM.asm EEPROM emulation processing Assembler

This processing includes not only read and write operations for EEPROM source
emulation but also data search and block transfer processing.

3.2 Resources Used by EEPROM Emulation Program

The resources used by this program are listed in Table 3-2 below.

Table 3-2. Resources

Resource Description

RAM RAM for EEPROM emulation 8 bytes

Stack 22 bytes
EEPROM write processing 22 bytes
EEPROM read processing 12 bytes
ROM EEPROM emulation processing 295 bytes
<R> Flash memory control processing 177 bytes
<R> Total 472 bytes

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3.3 Use of EEPROM Emulation Program

EEPROM emulation described in this chapter uses at least two blocks of flash memory. Two bytes of data can be
referred and updated to flash memory during EEPROM emulation.
When this EEPROM emulation program is embedded in the user application, the conditions are met (see 2.2
EEPROM Emulation Program Execution Conditions), and the specified program is executed, EEPROM emulation
can be performed.
The following explains how the “fixed-length data method, assembly language” program can be used to perform
EEPROM emulations.

3.3.1 Initial values for user settings

The user must set the following items as initial values for the EEPROM emulation program.
• The first block number used as EEPROM
• The number of blocks used as EEPROM
These initial value items are included in EEPROM.asm.

(1) Block numbers used as EEPROM

Specify the block numbers to be used for EEPROM emulation. The set blocks must be consecutive for more
than 2 blocks. Set the blocks so that they do not overlap the user program area.
The number of EEPROM rewrite cycles can be increased by increasing the number of blocks used as
EEPROM. Regardless of the amount of data used for EEPROM emulation, we recommend that any area that
is not being used as a program area should be set for use in EEPROM emulation.

Example 1. When using two blocks (blocks 14 and 15) as EEPROM blocks
EEPROM_BLOCK EQU (14)

EEPROM_BLOCK_NO EQU (2)

2. When using four blocks (blocks 12, 13, 14, and 15) as EEPROM blocks
EEPROM_BLOCK EQU (12)
EEPROM_BLOCK_NO EQU (4)

(2) Data length used by user

The data length to be stored in the EEPROM must be set by the user.
Set the data length with the data size and the delimiter (1 byte), because EEPROM emulation requires a
delimiter.

Example When the data to be stored is 2 bytes

LENG EQU (3) ; Data length (including the delimiter)

<R> (3) Number of erase retrials

The number of retrials is set in accordance with the time (MAX. value) required for the number of flash
memory block erasures performed.
In the sample program of this manual, it is set (4.9 seconds) under the conditions, TA = −40 to +85°C, 4.5 V ≤
VDD ≤ 5.5 V, and NERASE ≤ 1,000 times.
To set it under different conditions, set it larger than the block erasure time divided by 8.5 ms. The time for
one erase is 8.5 ms.

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 CHAPTER 3 EEPROM EMULATION PROGRAM (FIXED-LENGTH SINGLE-DATA METHOD, ASSEMBLYLANGUAGE)

3.3.2 Calling of user processing for EEPROM emulation

Two types of processing are provided for use when performing EEPROM emulations in a user program: EEPROM
read and write processing.

<EEPROM read and write processing>

EEPROM read and write processing facilitates EEPROM emulation by setting and calling a specific argument of a
data address.
The assembler version and C language version of EEPROM read and write processing is included in main.asm
and main.c, respectively.
The following variable and structure (RAM) are used both for reading and writing in EEPROM emulation.

For main.asm (assembler version), use the variable EEPROM_DATA defined below.
EEPROM_DATA: DS 2 ; Data

EEPROM_DELIMITER: DS 1 ; Delimiter

For main.c (C language version), use the structure eeprom_data defined below.
Struct eeprom_data{

unsigned char uc_eeprom_data[2] ; Data

unsigned char uc_delimiter ; Delimiter

};

(1) EEPROM read processing (__eeprom_read): Reads from the EEPROM area the data of the set size.

For main.asm (assembler version)

• Argument:
Store the EEPROM_DATA address to the AX register and execute subroutine call the _eeprom_read
function.
• Return value (CY flag):
The return value is either CY=0 indicating normal completion of data read or CY=1 indicating abnormal
completion. If the result is an abnormal completion, an error will occur if data with the specified number is
not written even once.

For main.c (C language version)

• Argument:
Execute the _eeprom_read function by using the address to the eeprom_data structure as the argument.
• Return value (error flag):
The return value is either return value=0 indicating normal completion of data read or return value =1
indicating abnormal completion. If the result is an abnormal completion, an error will occur if data with the
specified number is not written even once.

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CHAPTER 3 EEPROM EMULATION PROGRAM (FIXED-LENGTH SINGLE-DATA METHOD, ASSEMBLYLANGUAGE)

(2) EEPROM write processing (EEPROMWrite): Writes to the EEPROM area the data of the set size.

For main.asm (assembler version)

• Argument:
Store the EEPROM_DATA address to the AX register and execute the _eeprom_write function after
setting the data to be written to EEPROM_DATA and the delimiter to EEPROM_DELIMITER.
• Return value (CY flag):
The return value is either CY=0 indicating normal completion of data write or CY=1 indicating abnormal
completion. If the result is an abnormal completion, an error will occur if data with the specified number is
not written even once.

For main.c (C language version)

• Argument:
Execute the _eeprom_write function by using the address to the eeprom_data structure as the argument.
• Return value (error flag):
The return value is either return value=0 indicating normal completion of data write or return value =1
indicating abnormal completion.

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 CHAPTER 3 EEPROM EMULATION PROGRAM (FIXED-LENGTH SINGLE-DATA METHOD, ASSEMBLYLANGUAGE)

3.4 Description of EEPROM Emulation Program

3.4.1 User access processing for EEPROM emulation

Tables 3-3 and 3-4 list the processing that is accessed by users and used to perform read and write operations as
part of EEPROM emulation.

Table 3-3. EEPROM Read Processing

(a) Assembler version

Processing name __eeprom_read (user access function)

ROM size 29 bytes
Stack size 5 levels (10 bytes)
Input AX: Address of variable
Return value Normal completion: CY=0
Abnormal completion: CY=1
Description of The latest data at the specified address is read from the EEPROM to the storage address.
operation 1: Searches for blocks used as EEPROM.
2: Searches for address of latest data from valid blocks.
3: Reads latest data from searched addresses.

(b) C language version

Processing name _eeprom_read (user access function)

ROM size 29 bytes
Stack size 5 levels (10 bytes)
Input AX: Pointer of structure
Return value Normal completion: error flag=0
Abnormal completion: error flag=1
Description of The latest data at the specified address is read from the EEPROM to the storage address.
operation 1: Searches for blocks used as EEPROM.
2: Searches for address of latest data from valid blocks.
3: Reads latest data from searched addresses.

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Table 3-4. EEPROM Write Processing

(a) Assembler version

Processing name __eeprom_write (user access function)

ROM size 58 bytes
Stack size 11 levels (22 bytes)
Input AX: Address of variable
Return value Normal completion: CY=0
Abnormal completion: CY=1
Description of The data is written from to the storage address the EEPROM.
operation 1: Searches for blocks used as EEPROM.
2: Sets as valid the block specified first, if there are no valid blocks.
3: Searches for addresses of valid blocks which can be written.
4: Performs an operation to shift to the next block, if the valid blocks are full and cannot be written.
5: Creates write data.
6: Writes to valid blocks.

(b) C language version

Processing name _eeprom_write (user access function)

ROM size 58 bytes
Stack size 11 levels (10 bytes)
Input AX: Pointer of structure
Return value Normal completion: error flag=0
Abnormal completion: error flag=1
Description of The data is written from the storage address to the EEPROM.
operation 1: Searches for blocks used as EEPROM.
2: Sets as valid the block specified first, if there are no valid blocks.
3: Searches for addresses of valid blocks which can be written.
4: Performs an operation to shift to the next block, if the valid blocks are full and cannot be written.
5: Creates write data.
6: Writes to valid blocks..

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 CHAPTER 3 EEPROM EMULATION PROGRAM (FIXED-LENGTH SINGLE-DATA METHOD, ASSEMBLYLANGUAGE)

3.4.2 EEPROM emulation control processing (for internal processing)

Tables 3-5 to 3-9 list the processing used to control emulation as part of EEPROM emulation.

Table 3-5. EEPROM Block Search Processing

Processing name EEPROMUseBlockSearch

ROM size 28 bytes
Stack size 2 levels (4 bytes)
Input None
Output Normal completion: CY=0, A=Block table number (01H to FEH)
Abnormal completion: CY=1, A=The next end block
Registers used A
Description of Searches for currently used blocks in flash memory allocated as EEPROM.
operation

Table 3-6. EEPROM Block Initialize Processing

Processing name EEPROMBlockInit

ROM size 17 bytes
Stack size 6 levels (12 bytes)
Input None
Output Normal completion: CY=0
Abnormal completion: CY=1
Registers used A, X, B, C, D, E
Description of If there are no valid blocks among the blocks specified for EEPROM, the first specified block is set as
operation currently being used (valid).
Returns with CY = 0 if secured normally.
Returns with CY = 1 if not secured normally.

Table 3-7. EEPROM Block Change Processing

Processing name EEPROMUseBlockChange

ROM size 59 bytes
Stack size 6 levels (12 bytes)
Input A=Currently used block number
Output Normal completion: CY=0, C=Block table number (02H to FEH), Zero flag (Z)=1
Abnormal completion: CY=1, Zero flag (Z)=0
Registers used A, X, B, C, D, E
Description of If the currently used blocks are full of data, this function searches for the next block to be used and copies
operation data to that block.
1: Sets block to be used next.
2: Erases block to be used next.
3: Transfers the latest data from a valid block to the next block.
4: Sets the next block to be used as valid.
5: Sets currently valid blocks as invalid.
6: Stores to the new block number “CurrentB_No”.

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Table 3-8. EEPROM Block Data Write Top Search Processing

Processing name EEPROMWriteTopSearch

ROM size 44 bytes
Stack size 3 levels (6 bytes)
Input A: Currently searched block table number
Output Successful search: CY = 0, sets the write address to AX.
Search failure: CY = 1
Registers used A, X, B, D, E
Description of Searches for specified block’s write address.
operation Completes normally only if the data area fits within the block at 0FFH.

Table 3-9. EEPROM Latest Data Search Processing

Processing name EEPROMDataSearch

ROM size 33 bytes
Stack size 3 levels (6 bytes)
Input A: Currently used block table number
Output Normal completion: CY=0, DE=Address of the latest data
Abnormal completion: CY=1, E=0
Registers used A, X, D, E
Description of Reads the storage address of the latest data.
operation

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 CHAPTER 3 EEPROM EMULATION PROGRAM (FIXED-LENGTH SINGLE-DATA METHOD, ASSEMBLYLANGUAGE)

3.4.3 Flash memory control processing

Tables 3-10 to 3-17 list the processing used to control the flash memory as part of EEPROM emulation.

Table 3-10. Block Erase

Processing name SelfFlashBlockErase

<R> ROM size 29 bytes
Stack size 3 levels (6 bytes)
Input A: Number of block to be erased
Output Normal completion: CY=0
Abnormal completion: CY=1
Registers used B
Description of Erases the specified block and performs a blank check.
operation

Table 3-11. Mode Transition Processing (from Self Programming Mode to Normal Mode)

Processing name SelfFlashModeOff

ROM size 31 bytes
Stack size 1-level (2 bytes)
Input None
Output None
Registers used A, X
Description of Releases self programming mode.
operation

Table 3-12. Mode Transition Processing (from Normal Mode to Self Programming Mode)

Processing name SelfFlashModeOn

ROM size 35 bytes
Stack size 1-level (2 bytes)
Input None
Output None
Registers used A, X
Description of Sets self programming mode.
operation

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 CHAPTER 3 EEPROM EMULATION PROGRAM (FIXED-LENGTH SINGLE-DATA METHOD, ASSEMBLYLANGUAGE)

Table 3-13. Block Erase Processing

Processing name FlashBlockErase

ROM size 15 bytes
Stack size 1-level (2 bytes)
Input A: Block number
Output Normal completion: Zero flag (Z)=1
Abnormal completion: Zero flag (Z)=0
Registers used A
Description of Erases the specified block.
operation

Table 3-14. Flash Self Programming Function Calling Processing

Processing name SubFlashSelfPrg

ROM size 12 bytes
Stack size 1-level (2 bytes)
Input None
Output Normal completion: Zero flag (Z)=1
Abnormal completion: Zero flag (Z)=0
Registers used A
Description of Calls flash self programming function.
operation

Table 3-15. Block Blank Check Processing

Processing name FlashBlockBlankCheck

ROM size 17 bytes
Stack size 1 level (2 bytes)
Input A: Specified block number
Output Normal completion: Zero flag (Z)=1
Abnormal completion: Zero flag (Z)=0
Registers used A
Description of Performs a blank check of the specified block.
operation

Table 3-16. Processing for Setting Block as Valid

Processing name SetValid

ROM size 9 bytes
Stack size 1 level (2 bytes)
Input A: Block number
Output Normal completion: Zero flag (Z)=1
Abnormal completion: Zero flag (Z)=0
Registers used A, X, B, C, D, E
Description of Sets as valid the block used.
operation

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 CHAPTER 3 EEPROM EMULATION PROGRAM (FIXED-LENGTH SINGLE-DATA METHOD, ASSEMBLYLANGUAGE)

Table 3-17. EEPROM Data Write Processing

Processing name FlashEEPROMWrite

<R> ROM size 56 bytes
Stack size 5 levels (10 bytes)
Input DE: Write start address
C: Write data count
AX: Write data storage address
Output Normal completion: Zero flag (Z)=1
Abnormal completion: Zero flag (Z)=0
Registers used D, E
Description of Writes data to EEPROM and internally verifies the data.
operation

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 CHAPTER 3 EEPROM EMULATION PROGRAM (FIXED-LENGTH SINGLE-DATA METHOD, ASSEMBLYLANGUAGE)

3.5 Flowchart of EEPROM Emulation Program

3.5.1 Flowcharts of EEPROM emulation access processings

Figures 3-1 and 3-2 show flowcharts of access processings called by users to perform read or write operations as
part of EEPROM emulation.

Figure 3-1. Flowchart of EEPROM Read Processing

[Overview]
The data defined with the structure is read from specified storage address.

__eeprom_read

Searches for currently used blocks

(EEPROMUseBlockSearch)

No
Block found?

Yes
Searches for latest data
(EEPROMDataSearch)

Data found? No

Yes
Store latest data
to specified address

CY = 0 CY = 1
(read successful) (read failure)

RET

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 CHAPTER 3 EEPROM EMULATION PROGRAM (FIXED-LENGTH SINGLE-DATA METHOD, ASSEMBLYLANGUAGE)

Figure 3-2. Flowchart of EEPROM Write Processing

[Overview]
The data of the specified number is written to a valid block from the storage address.

__eeprom_write

Shift to flash mode

(SelfFlashModeOn)

Search for latest block

(EEPROMUseBlockSearch)

Yes
Block found?

No
Specify first valid block Search writable area
(EEPROMBlockInit) (EEPROMWriteTopSearch)

Set smallest block number

to valid block
Yes
Area found?
Write data to EEPROM area
No
(FlashEEPROMWrite)
Change block because there is
no free area
(EEPROMUseBlockChange)

Block change No
successful?
A

Yes
Write successful? Yes

A No
Release flash mode Release flash mode
(SelfFlashModeOff) (SelfFlashModeOff)

CY = 1 CY = 0
(write failure ) (write successful )

RET

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 CHAPTER 3 EEPROM EMULATION PROGRAM (FIXED-LENGTH SINGLE-DATA METHOD, ASSEMBLYLANGUAGE)

3.5.2 Flowcharts of EEPROM emulation control processings

Figures 3-3 to 3-7 show flowcharts of emulation control processings used during EEPROM emulation.

Figure 3-3. Flowchart of Currently Used EEPROM Block Search Function

[Overview]
The currently used blocks of the flash memory that is allocated as EEPROM is searched.

EEPROMUseBlockSearch

Set start block number

Check valid or invalid flag of block

Yes
Valid block checked?

No
Store valid block number
Move to next block
to CurentB_No

No
All set blocks completed?

Yes
CY = 1 CY = 0
(search failure) (search successful)

RET

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 CHAPTER 3 EEPROM EMULATION PROGRAM (FIXED-LENGTH SINGLE-DATA METHOD, ASSEMBLYLANGUAGE)

Figure 3-4. Flowchart of EEPROM Block Initialize Processing

[Overview]
If there are no valid blocks among the blocks specified for EEPROM, the first specified block is set as valid.

EEPROMBlockInit

Set start block number

Erase specified block

(SelfFlashBlockErase)

No
Erased?

Yes
Set block as valid
(Setvalid)

No
Valid flag set?

Yes
CY = 0 CY = 1
(initialize successful ) (initialize failure)

Initialize completion

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 CHAPTER 3 EEPROM EMULATION PROGRAM (FIXED-LENGTH SINGLE-DATA METHOD, ASSEMBLYLANGUAGE)

Figure 3-5. Flowchart of EEPROM Use Block Change Processing

[Overview]
If the currently used blocks are full of data, this function searches for the next block to be used and copies data to new
block.

EEPROMUseBlockChange

Set block number of next block

Erase next block to be used

(SelfFlashBlockErase)

No
Erased?

Yes
Write next block's data
Set start address

Write updated data to

start address of next block
(FlashEEPROMWrite)

No
Write successful?

Yes
Set valid flag to new block
(Setvalid)

No
Is valid flag normal?

Yes
Set invalid flag to old block
(Setinvalid)

No
Is invalid flag normal?

Yes
CY = 0 CY = 1
(update successful) (update failure)

RET

Application Note U17379EJ3V0AN 33

 CHAPTER 3 EEPROM EMULATION PROGRAM (FIXED-LENGTH SINGLE-DATA METHOD, ASSEMBLYLANGUAGE)

Figure 3-6. Flowchart of EEPROM Use Block Data Write Top Search Processing

[Overview]
Searches for specified block’s write area.
Completes normally only if the data area fits within the block at 0xFFH.

EEPROMWriteTopSearch

Set for specified block’s

start address.

Delimiter≠ FFH
Delimiter checked?

Delimiter = FFH
Check data erasure of
write area

No
Is data FF?

Yes
CY = 0
(Search successful)

RET

Update address to be searched

No
End of block?

Yes
CY = 1
(Search failure)

RET

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 CHAPTER 3 EEPROM EMULATION PROGRAM (FIXED-LENGTH SINGLE-DATA METHOD, ASSEMBLYLANGUAGE)

Figure 3-7. Flowchart of EEPROM Latest Data Search Processing

[Overview]
Reads the storage address of the latest data.

EEPROMDataSearch

Set for specified block’s

start address.

Set address of data to be

checked next

Block exceeded Yes

by next address?

No

Delimiter ≠ 00H
Delimiter checked?

Delimiter = 00H
Copy address to DE register
(return value)

Update address to be searched

No
Search successful?

Yes
CY = 0 CY = 1
(Search successful) (Search failure)

RET

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 CHAPTER 3 EEPROM EMULATION PROGRAM (FIXED-LENGTH SINGLE-DATA METHOD, ASSEMBLYLANGUAGE)

3.6 List of EEPROM Emulation Processings

A call tree of EEPROM emulation processings is shown below.

Figure 3-8. Call Tree

User access processings EEPROM emulation processings Flash memory control processings

__eerom_read EEPROMUseBlockSearch

EEPROMDataSearch

__eeprom_write SelfFlashModeOn

SelfFlashModeOff

EEPROMUseBlockSearch

EEPROMBlockInit SelfFlashBlockErase FlashBlockBlankCheck

FlashBlockErase

FlashEEPROMWrite

EEPROMWriteTopSearch

EEPROMUseBlockChange SelfFlashBlockErase FlashBlockBlankCheck

FlashBlockErase

FlashEEPROMWrite

SetValid

SetInvalid
EEPROMDataSearch

FlashEEPROMWrite

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4.1 Main Specifications for EEPROM Emulation

EEPROM emulation is a function that is used to use a portion of the flash memory as rewritable data ROM, by
using the self programming function of the flash memory. The sample program can be used in combination with a
user program to perform read or write processing, as with EEPROM.
Note that the data length and number of rewrites is restricted, because the internal flash memory can only be
rewritten a limited number of times. Next, the basic specifications of the sample program and how to calculate the
number of rewrites is described.

Basic specifications of the sample program and how to calculate the number of rewrites

x Data format for saving

Data number (1 byte) Data (2 bytes) Delimiter (1 byte)

↑
Number distinguishing the data to be saved (Two types of data numbers are used in the sample program.)

Remark The data size can be set, starting from 1 byte. The upper size limit depends on the RAM size.

x Number of flash memory block rewrites

(256 − 2) / 4 − 1 = 62 times (rounded to the nearest integer)

The number of data copied in the switching of block

Data size
Valid or invalid flag (see 4.1.3)
Memory size of one block

x Number of blocks to be used as the EEPROM area

Two blocks (MIN.) are used.
Remark These blocks are required to prevent data losses due to problems, such as power cut-off and power
interruption during block erasure.

<R> x Number of erasures of one block

1,000 times

<R> x Maximum number of rewrites

62 ¯ 2 ¯ 1,000 = 124,000 times

Number of block erasures

Number of blocks to be used
Number of rewrites of one block

In the sample program, data is handled in 2-byte units, and 62 rewrites can be performed per block (256 bytes), in
combination with a delimiter (1 byte) that indicates the end of data. Furthermore, since an area of at least two
<R> consecutive blocks is required to avoid losses caused, for example, by an unexpected power supply voltage drop, a
total of 124 rewrites can be performed when two blocks are used. In addition, since a block can be erased up to
1,000 times in the sample program, data can be rewritten up to 124,000 times when two blocks are used.

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 CHAPTER 4 EEPROM EMULATION FUNCTION (FIXED-LENGTH MULTIPLE-DATA METHOD)

If, however, the total number of bytes of all EEPROM storage data (data + delimiter) types is not sufficiently large
with respect to the storage block size (i.e., the total number of bytes of the data is larger than half the block size),
EEPROM emulation may not function correctly. In particular, the transfer of data between blocks may occur
frequently and the number of data rewrites may significantly decrease.
At least two consecutive blocks must be secured to allocate the flash memory for storing data. These blocks can
be set freely by the user.
Figure 4-1 shows a memory map and data structure example in which the user program size is 3.5 KB and blocks
14 and 15 are set to be used for EEPROM emulation.

Figure 4-1. Memory Map and Data Structure Example

(When User Program Size Is 3.5 KB and Blocks 14 and 15 Are Set as Data Area for Use EEPROM Emulation)

1 byte 1 byte

FFFFH Valid/invalid flag

Special function register (SFR) Not used
FF00H FFH FFH
FEFFH Valid
Internal high-speed RAM
FE00H 00H FFH
FDFFH
Invalid
Reserved 00H 00H
0F00H 0F01H
1000H
0FFFH 0FFFH
Block 15 Block 15
0F00H
0EFFH
Block 14 0F10H
0E00H 0F00H
0DFFH Block 14
Block 13
DataNote 0E10H
Block 12
Data Data Data DataNote 0 E 0 0 H
Block 11
Data No. Data 1 Data 2 Delimiter
Block 10
0E02H 0E03H 0E04H 0E05H

User program Block 9 1 byte 2 bytes 1 byte

+
EEPROM emulation
program :

Can support up to
3.5 KB total
Block 4

Block 3

Block 2

Block 1

Block 0
0000H

Note Data is stored successively.

Remark Data structure in Figure 2-1 shows the example when used the sample program.

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4.1.1 EEPROM emulation data block

The EEPROM emulation program requires at least two consecutive blocks for storing data.
As long as these blocks do not overlap the user program area, they can be freely set by the user.

4.1.2 Data structure

Data that is stored as part of EEPROM emulation consists of a data number (1 byte), data (1-byte unit), and a
delimiter (1 byte).

Figure 4-2. Data Structure

1 byte 1-byte unit 1 byte

Data No. Data Delimiter

(1) Data number

Data numbers are used to distinguish data to be read or written. Any data number value from 00H to FEH is
valid.
The user should assign a data number to each particular type of data before using the data.
Basically, each time a write program is executed, data is written in 4-byte units, beginning from the start of the
block.
To read the latest data, search from the start of the block in 4-byte units to see whether or not the same data
number exists. If several instances of data having the same data number are found, the data that is closest to
the data end point is regarded as the latest data.
If the data number is FFH, it is judged as the data end point. After flash memory is erased, all data is
assigned the value FFH, so when FFH is read at the location of a data number, it is judged as the data end
point and the search is terminated. Accordingly, only data numbers from 00H to FEH are valid.

Remark Two types of data numbers are used in the sample program.

(2) Data
00H to FFH can be set by any value that is to be stored. The data size can be set, starting from 1 byte, but
the upper size limit depends on the RAM size that can be used. Note, however, that, the larger the size, the
more the number of rewrites will decrease. It is specified as 2 bytes (the data length (LENG) is defined as 4)
in the sample program.

(3) Delimiter
The delimiter’s value is fixed as 00H. Delimiters are written to enable detection of unsuccessful data writing,
such as in cases where power interruptions or other problems occurred during a data write operation.
Whether data writing has completed normally is judged by writing a delimiter area last. If a delimiter (00H)
cannot be read correctly, it is likely that a problem will occur when writing data, so the corresponding data is
not used.
If a search finds an abnormal delimiter in the latest data, the data written before that data (followed by the data
closest to the next end point), having a normal delimiter, is read as the latest data.

(4) Normal flow of data storage and search operations

The normal flow of the data storage and search operations are described below (in this example, the blocks
specified for EEPROM emulation are blocks 14 and 15).

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 CHAPTER 4 EEPROM EMULATION FUNCTION (FIXED-LENGTH MULTIPLE-DATA METHOD)

(Status 1) Block 14 is set as a valid block.

Block 14 +0
Valid flag 00H 0E00H
Invalid flag FFH 0E01H
Data FFH 0E02H

(Status 2) Data number 1 (for data values 11H and 22H) is written.
Block 14 +0 +1 +2 +3
Valid flag 00H 0E00H
Invalid flag FFH 0E01H
Data 01H 11H 22H 00H 0E02H
: FFH 0E06H

(Status 3) Data number 2 (for data values 22H, 33H) is written.

Block 14 +0 +1 +2 +3
Valid flag 00H 0E00H
Invalid flag FFH 0E01H
Data 01H 11H 22H 00H 0E02H
Data 02H 22H 33H 00H 0E06H
: FFH 0E0AH

(Status 4) Data number 2 (for data values 20H, 30H) is written.

Block 14 +0 +1 +2 +3
Valid flag 00H 0E00H
Invalid flag FFH 0E01H
Data 01H 11H 22H 00H 0E02H
Data 02H 22H 33H 00H 0E06H
Data 02H 20H 30H 00H 0E0AH
: FFH 0E0EH

(Status 5) Data number 2 is read.

Block 14 +0 +1 +2 +3
Valid flag 00H 0E00H
Invalid flag FFH 0E01H
Data a 01H 11H 22H 00H 0E02H
Data b 02H 22H 33H 00H 0E06H
Data c 02H 20H 30H 00H 0E0AH
Data d FFH 0E0EH

<1> Since data a has a different data number, the operation goes to the next data.
<2> Since data b has a matching data number, its delimiter is checked, and since the delimiter value is 00H
(normal), data of 2 bytes is stored as the latest data, and the operation goes to the next data.
<3> Since data c has a matching data number, its delimiter is checked, and since the delimiter value is 00H
(normal), data of 2 bytes is stored as the latest data, and the operation goes to the next data.
<4> The data number for data d is FFH (end point), so the read operation is terminated.
<5> The read value therefore becomes the latest stored data (data c).

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The following describes the flow of operations when a problem such as a power interruption occurs while
storing data (in this example, the blocks specified for EEPROM emulation are blocks 14 and 15).

(Status 1) Block 14 is set as a valid block.

Block 14 +0
Valid flag 00H 0E00H
Invalid flag FFH 0E01H
Data FFH 0E02H

(Status 2) Data number 1 (for data values 11H, 22H) is written.

Block 14 +0 +1 +2 +3
Valid flag 00H 0E00H
Invalid flag FFH 0E01H
Data 01H 11H 22H 00H 0E02H
: FFH 0E06H

(Status 3) Power interruption occurs while data number 1 (for data values 22H, 33H) is being written and
delimiter cannot be written correctly (value other than 00H is written)
Block 14 +0 +1 +2 +3
Valid flag 00H 0E00H
Invalid flag FFH 0E01H
Data 01H 11H 22H 00H 0E02H
Data 01H 22H 33H 01H 0E06H
: FFH 0E0AH

(Status 4) Data number 1 is read.

Block 14 +0 +1 +2 +3
Valid flag 00H 0E00H
Invalid flag FFH 0E01H
Data 01H 11H 22H 00H 0E02H
Data 01H 22H 33H 01H 0E06H
: FFH 0E0AH

How to read
<1> Since data a has a matching data number, its delimiter is checked, and since the delimiter value is 00H
(normal), data of 2 bytes is stored as the latest data, the operation goes to the next data.
<2> Since data b has a matching data number, its delimiter is checked, and since the delimiter value is 01H
(abnormal), the operation goes to the next data.
<3> The data number for data c is FFH (end point), so the read operation is terminated.
<4> The read value therefore becomes the latest stored data (data a).

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 CHAPTER 4 EEPROM EMULATION FUNCTION (FIXED-LENGTH MULTIPLE-DATA METHOD)

4.1.3 Valid and invalid flags

Valid and invalid flags are placed at the start of the block as a total of 2 bytes of data specified in 1-byte units. As
such, valid and invalid flags indicate the valid or invalid status of data stored in the corresponding block.
When the valid flag’s value is 00H and the invalid flag’s value is FFH, the corresponding block is valid. In all other
cases, the block is invalid.
Data is stored sequentially to a valid block, and if that block becomes full, a search is executed to find blocks (at
least two blocks are required) for storing the subsequent data, after which data is transferred to those blocks (this data
is only the latest data for each data number). After the data transfer is completed, the valid/invalid flag setting makes
the next block valid and the previously valid block invalid. In the event that the next block becomes full or a power
interruption or other problem occurs while transferring data to the next block, this operation enables the data up to that
point to be saved in order to prevent loss of data.
The operation flow of valid and invalid flags is described below.

(Status 1) Initial status

Block n Block n + 1
Valid flag FFH Valid flag FFH
Invalid flag FFH Invalid flag FFH
Data FFH Data FFH
: : : :
Data FFH Data FFH

(Status 2) Write 00H to valid flag for block n

Block n Block n + 1
Valid flag 00H Valid flag FFH
Invalid flag FFH Invalid flag FFH
Data FFH Data FFH
: : : :
Data FFH Data FFH

(Status 3) Write data to block n

Block n Block n + 1
Valid flag 00H Valid flag FFH
Invalid flag FFH Invalid flag FFH
Data Data Data FFH
: : : :
Data FFH Data FFH

(Status 4) Data is full in block n

Block n Block n + 1
Valid flag 00H Valid flag FFH
Invalid flag FFH Invalid flag FFH
Data Data Data FFH
: : : :
Data Data Data FFH

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(Status 5) The latest data to be updated is written after the latest data whose data number has not been updated is
transferred to block n + 1.
Block n Block n + 1
Valid flag 00H Valid flag FFH
Invalid flag FFH Invalid flag FFH
Data Data Data Data
: : : :
Data Data Data FFH

(Status 6) Write 00H to valid flag for block n + 1

Block n Block n + 1
Valid flag 00H Valid flag 00H
Invalid flag FFH Invalid flag FFH
Data Data Data Data
: : : :
Data Data Data FFH

(Status 7) Write 00H to invalid flag for block n

Block n Block n + 1
Valid flag 00H Valid flag 00H
Invalid flag 00H Invalid flag FFH
Data Data Data Data
: : : :
Data Data Data FFH

(Status 8) Data is full in block n + 1

Block n Block n + 1
Valid flag 00H Valid flag 00H
Invalid flag 00H Invalid flag FFH
Data Data Data Data
: : : :
Data Data Data Data

(Status 9) Erase block n

Block n Block n + 1
Valid flag FFH Valid flag 00H
Invalid flag FFH Invalid flag FFH
Data FFH Data Data
: : : :
Data FFH Data Data

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 CHAPTER 4 EEPROM EMULATION FUNCTION (FIXED-LENGTH MULTIPLE-DATA METHOD)

(Status 10) The latest data to be updated is written after the latest data whose data number has not been updated
is transferred to block n.
Block n Block n + 1
Valid flag FFH Valid flag 00H
Invalid flag FFH Invalid flag FFH
Data Data Data Data
: : : :
Data FFH Data Data

(Status 11) Write 00H to valid flag for block n

Block n Block n + 1
Valid flag 00H Valid flag 00H
Invalid flag FFH Invalid flag FFH
Data Data Data Data
: : : :
Data FFH Data Data

(Status 12) Write 00H invalid flag for block n + 1

Block n Block n + 1
Valid flag 00H Valid flag 00H
Invalid flag FFH Invalid flag 00H
Data Data Data Data
: : : :
Data FFH Data Data

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 CHAPTER 4 EEPROM EMULATION FUNCTION (FIXED-LENGTH MULTIPLE-DATA METHOD)

4.2 EEPROM Emulation Program Execution Conditions

Be sure to meet all of the conditions listed in Table 4-1 before executing the EEPROM emulation program.

Table 4-1. Conditions for EEPROM Emulation Operations

Item Description
Secure stack area During EEPROM emulation program operations, the stack used by the user program is
(Assembly language: 22 bytes) inherited and used. In addition, the stack area described on the left starting from the stack
address at the start of EEPROM emulation program execution is required. See 5.2 Resources
Used by EEPROM Emulation Program for further description of this stack.
EEPROM emulation program The area must be secured as RAM dedicated to EEPROM emulation, where read and write
RAM data are stored temporarily. Secure the area described on the left in the internal high-speed
(Assembly language: 11 bytes) RAM as a data buffer. In addition to the RAM for the program described on the left, only the
stack area is used by the EEPROM emulation program.
Operation of watchdog timer Since no instruction can be executed while flash memory control processing is being
(WDT) performed during execution of the EEPROM emulation program, flash memory control
processing clears the WDT counter. At this time, set the overflow time to 10 ms or longer so
that no overflow occurs in WDT.
Prohibit reset Do not reset this microcontroller during EEPROM emulation program operations. When a reset
occurs, any data in the flash memory being accessed becomes undefined.
Prohibit power cut-off or Be sure to apply a stable voltage to the microcontroller during EEPROM emulation program
interruption operations. When a power cut-off or interruption occurs, any data in the flash memory being
accessed becomes undefined.

Cautions 1. All interrupts are disabled during write processing of the EEPROM emulation program. After
completion of EEPROM emulation program write processing, the interrupt mask status
returns to the status before the EEPROM emulation program write processing, and interrupts
are enabled.
<R> 2. When using the on-chip debug function, do not allocate areas such as the EEPROM
emulation data area to the area where the monitor program for debugging is allocated.

Example: Allocating a 2-block data area in a 4 KB flash memory product

Blocks 14 and 15 are used for the on-chip debug function, so allocate the data area to
flash memory area other than blocks 14 and 15.

Remark For details on the watchdog timer operation and prohibitions on power cut-off or interruption, refer to
Cautions on self programming function in the flash memory chapter in the user’s manual for each
78K0S/Kx1+ product.
<R> For details on the on-chip debug function, refer to the on-chip debug function chapter in the user’s
manual for each 78K0S/Kx1+ product.

<R> 4.3 How to Get the Sample Program

Download the sample program from the URL below.

http://www.necel.com/micro/en/designsupports/sampleprogram/78k0s/low_pin_count/index.html

Application Note U17379EJ3V0AN 45

 CHAPTER 5 EEPROM EMULATION PROGRAM (FIXED-LENGTH MULTIPLE-DATA METHOD,
ASSEMBLY LANGUAGE)

This is an application program that uses the self programming function of the flash memory in order to use the
flash memory as EEPROM memory for storing data, etc.

5.1 Configuration of EEPROM Emulation Program

Table 5-1 lists the files that comprise this program.

Table 5-1. File Configuration

File Name Function Type

EEPROM.asm EEPROM emulation processing Assembler

This processing includes not only read and write operations for EEPROM source
emulation but also data search and block transfer processing.

5.2 Resources Used by EEPROM Emulation Program

The resources used by this program are listed in Table 5-2 below.

Table 5-2. Resources

Resource Description

RAM RAM for EEPROM emulation 11 bytes

Stack 22 bytes
EEPROM write processing 22 bytes
EEPROM read processing 12 bytes
ROM EEPROM emulation processing 303 bytes

<R> Flash memory control processing 177 bytes

<R> Total 480 bytes

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5.3 Use of EEPROM Emulation Program

EEPROM emulation described in this chapter uses at least two blocks of flash memory. Two bytes of data can be
referred and updated to flash memory during EEPROM emulation.
When this EEPROM emulation program is embedded in the user application, the conditions are met (see 4.2
EEPROM Emulation Program Execution Conditions), and the specified program is executed, EEPROM emulation
can be performed.
The following explains how the “fixed-length multiple-data method, assembly language” program can be used to
perform EEPROM emulations.

5.3.1 Initial values for user settings

The user must set the following items as initial values for the EEPROM emulation program.
• The first block number of blocks used as EEPROM (defined as constant EEPROM_BLOCK)
• The number of blocks used as EEPROM (defined as constant EEPROM_BLOCK_NO)
• Amount of data used by user, data length (defined as constant DATA_NO_MAX and LENG, respectively)
These initial value items are included in EEPROM.asm.

(1) The block numbers and the number of blocks used as EEPROM
Specify the block numbers of blocks to be used for EEPROM emulation. The set blocks must be consecutive
for more than 2 blocks. Set the blocks so that they do not overlap the user program area.
The number of EEPROM rewrite cycles can be increased by increasing the number of blocks used as
EEPROM. Regardless of the amount of data used for EEPROM emulation, we recommend that any area that
is not being used as a program area should be set for use in EEPROM emulation.

Example 1. When using two blocks (blocks 14 and 15) as EEPROM blocks
EEPROM_BLOCK EQU (14)

EEPROM_BLOCK_NO EQU (2)

2. When using four blocks (blocks 12, 13, 14, and 15) as EEPROM blocks
EEPROM_BLOCK EQU (12)
EEPROM_BLOCK_NO EQU (4)

(2) Amount of data and data length used by user

The amount of data and data length to be stored in the EEPROM must be set by the user.
Set the data length with the data size, data number (1 byte), and the delimiter (1 byte), because EEPROM
emulation requires data number and a delimiter.

Example When using two types of 2 bytes data

DATA_NO_MAX EQU (2) ; When two units of data (data numbers 0 and 1) are to be used

LENG EQU (4) ; Data length (size including data number and delimiter

(2 bytes, total))

<R> (3) Number of erase retrials

The number of retrials is set in accordance with the time (MAX. value) required for the number of flash
memory block erasures performed.
In the sample program of this manual, it is set (4.9 seconds) under the conditions, TA = −40 to +85°C, 4.5 V ≤
VDD ≤ 5.5 V, and NERASE ≤ 1,000 times.

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 CHAPTER 5 EEPROM EMULATION PROGRAM (FIXED-LENGTH MULTIPLE-DATA METHOD, ASSEMBLY LANGUAGE)

To set it under different conditions, set it larger than the block erasure time divided by 8.5 ms. The time for
one erase is 8.5 ms.

5.3.2 Calling of user processing for EEPROM emulation

Two types of processing are provided for use when performing EEPROM emulations in a user program: EEPROM
read and write processing.

<EEPROM read and write processing>

EEPROM read and write processing facilitates EEPROM emulation by calling address of variable or structure as
specific argument.
The assembler version and C language version of EEPROM read and write processing is included in main.asm
and main.c, respectively.
The following variable and structure (RAM) are used both for reading and writing in EEPROM emulation.

For main.asm (assembler version), use the variable EEPROM_DATA defined below.
EEPROM_DO: DS 1 ; Data number

EEPROM_DATA: DS 2 ; Data

EEPROM_DELIMITER: DS 1 ; Delimiter

For main.c (C language version), use the structure eeprom_data defined below.
Struct eeprom_data{

unsigned char uc_data_no ; Data number

unsigned char uc_eeprom_data[2] ; Data

unsigned char uc_delimiter ; Delimiter

};

(1) EEPROM read processing (__eeprom_read): Reads from the EEPROM area the data of the set size.

For main.asm (assembler version)

• Argument:
Store the EEPROM_NO address to the AX register and call the __eeprom_read function as a subroutine,
after setting to EEPROM_NO the data number of the data to be read.
• Return value (CY flag):
The return value is either CY=0 indicating normal completion of data read or CY=1 indicating abnormal
completion. If the result is an abnormal completion, be sure to check whether or not the data number is
within the set range. An error will occur if data with the specified number is not written even once.

For main.c (C language version)

• Argument:
Execute the _eeprom_read function by using the address to the eeprom_data structure as the argument,
after setting to uc_data_no of eeprom_data structure the data number of the data to be read.

• Return value (error flag):

The return value is either return value=0 indicating normal completion of data read or return value =1
indicating abnormal completion. If the result is an abnormal completion, be sure to check whether or not

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the data number is within the set range. An error will occur if data with the specified number is not written
even once.

(2) EEPROM write processing (__eeprom_write): Writes to the EEPROM area the data of the set size.

For main.asm (assembler version)

• Argument:
Store the EEPROM_NO address to the AX register and execute the __eeprom_write function, after
setting the data number of the data to be written, data, and delimiter to EEPROM_NO, EEPROM_DATA,
and EEPROM_DELIMITER, respectively.
• Return value (CY flag):
The return value is either CY=0 indicating normal completion of data write or CY=1 indicating abnormal
completion. If the result is an abnormal completion, be sure to check whether or not the data number is
within the set range. An error will occur if data with the specified number is not written even once.

For main.c (C language version)

• Argument:
Store the EEPROM_NO address to the AX register and execute the __eeprom_write function, after
setting the data number of the data to be written, data, and delimiter to uc_data_no eeprom_data
structure, uc_eeprom_data, and uc_delimiter, respectively.
• Return value (error flag):
The return value is either return value=0 indicating normal completion of data write or return value =1
indicating abnormal completion.

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 CHAPTER 5 EEPROM EMULATION PROGRAM (FIXED-LENGTH MULTIPLE-DATA METHOD, ASSEMBLY LANGUAGE)

5.4 Description of EEPROM Emulation Program

5.4.1 User access processing for EEPROM emulation

Tables 5-3 and 5-4 list the processing that is accessed by users and used to perform read and write operations as
part of EEPROM emulation.

Table 5-3. EEPROM Read Processing

(a) Assembler version

Processing name __eeprom_read (user access function)

ROM size 31 bytes
Stack size 6 levels (12 bytes)
Input AX: Address of variable
Return value Normal completion: CY=0
Abnormal completion: CY=1
Description of The latest data at the specified data number is read from the EEPROM to the storage address.
operation 1: Searches for blocks used as EEPROM.
2: Searches for address of latest data from valid blocks.
3: Reads latest data from searched addresses.

(b) C language version

Processing name _eeprom_read (user access function)

ROM size 31 bytes
Stack size 6 levels (12 bytes)
Input AX: Pointer of structure
Return value Normal completion: error flag=0
Abnormal completion: error flag=1
Description of The latest data at the specified data number is read from the EEPROM to the storage address.
operation 1: Searches for blocks used as EEPROM.
2: Searches for address of latest data from valid blocks.
3: Reads latest data from searched addresses.

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Table 5-4. EEPROM Write Processing

(a) Assembler version

Processing name __eeprom_write (user access function)

ROM size 63 bytes
Stack size 11 levels (22 bytes)
Input AX: Address of variable
Return value Normal completion: CY=0
Abnormal completion: CY=1
Description of The data of specified number is written from the storage address to the EEPROM.
operation 1: Searches for blocks used as EEPROM.
2: Sets as valid the block specified first, if there are no valid blocks.
3: Searches for addresses of valid blocks which can be written.
4: Performs an operation to shift to the next block, if the valid blocks are full and cannot be written.
5: Creates write data.
6: Writes to valid blocks.

(b) C language version

Processing name _eeprom_write (user access function)

ROM size 63 bytes
Stack size 11 levels (10 bytes)
Input AX: Pointer of structure
Return value Normal completion: error flag=0
Abnormal completion: error flag=1
Description of The data of specified number is written from the storage address to the EEPROM.
operation 1: Searches for blocks used as EEPROM.
2: Sets as valid the block specified first, if there are no valid blocks.
3: Searches for addresses of valid blocks which can be written.
4: Performs an operation to shift to the next block, if the valid blocks are full and cannot be written.
5: Creates write data.
6: Writes to valid blocks..

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 CHAPTER 5 EEPROM EMULATION PROGRAM (FIXED-LENGTH MULTIPLE-DATA METHOD, ASSEMBLY LANGUAGE)

5.4.2 EEPROM emulation control processing (for internal processing)

Tables 5-5 to 5-10 list the processing used to control emulation as part of EEPROM emulation.

Table 5-5. EEPROM Parameter Acquisition Processing

Processing name getprara

ROM size 8 bytes
Stack size 1-level (2 bytes)
Input AX: pointer of structure
Output A=data number. Copies also to RQDATA_No.
HL=data address
Description of Reads from the argument (pointer) for the user to call a function, the content of its structure and acquires the
operation required parameters.

Table 5-6. EEPROM Block Search Processing

Processing name EEPROMUseBlockSearch

ROM size 27 bytes
Stack size 2-level (4 bytes)
Input None
Output Normal completion: CY=0, A=Block table number (01H to FEH)
Abnormal completion: CY=1, A=The next end block
Registers used A
Description of Searches for currently used blocks in flash memory allocated as EEPROM.
operation

Table 5-7. EEPROM Block Initialize Processing

Processing name EEPROMBlockInit

ROM size 19 bytes
Stack size 6-level (12 bytes)
Input None
Output Normal completion: CY=0
Abnormal completion: CY=1
Registers used A, X, B, C, D, E
Description of If there are no valid blocks among the blocks specified for EEPROM, the first specified block is set as
operation currently being used (valid).
Returns with CY = 0 if secured normally.
Returns with CY = 1 if not secured normally.

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Table 5-8. EEPROM Block Change Processing

Processing name EEPROMUseBlockChange

ROM size 88 bytes
Stack size 6 levels (12 bytes)
Input A=Currently used block number
Output Normal completion: CY=0
Abnormal completion: CY=1
Registers used A, X, B, C, D, E
Description of If the currently used blocks are full of data, this function searches for the next block to be used and copies
operation data to that block.
1: Sets block to be used next.
2: Erases block to be used next.
3: Transfers the latest data from a valid block to the next block.
4: Sets the next block to be used as valid.
5: Sets currently valid blocks as invalid.
6: Stores to the new block number “CurrentB_No”.

Table 5-9. EEPROM Block Data Write Top Search Processing

Processing name EEPROMWriteTopSearch

ROM size 26 bytes
Stack size 3 levels (6 bytes)
Input A: Currently searched block table number
Output Successful search: CY = 0, sets the write address to AX.
Search failure: CY = 1
Registers used A, AX
Description of Searches for specified block’s write address.
operation Completes normally only if the data area fits within the block at 0FFH.

Table 5-10. EEPROM Latest Data Search Processing

Processing name EEPROMDataSearch

ROM size 41 bytes
Stack size 2 levels (4 bytes)
Input A: Currently used block table number, X: Search data number 5
Output Normal completion: CY=0, DE=Address of the latest data
Abnormal completion: CY=1, E=0
Registers used A, D, E
Description of Reads the storage address of the latest data corresponding to the specified number.
operation

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 CHAPTER 5 EEPROM EMULATION PROGRAM (FIXED-LENGTH MULTIPLE-DATA METHOD, ASSEMBLY LANGUAGE)

5.4.3 Flash memory control processing

Tables 5-11 to 5-18 list the processing used to control the flash memory as part of EEPROM emulation.

Table 5-11. Block Erase

Processing name SelfFlashBlockErase

<R> ROM size 29 bytes
Stack size 3 levels (8 bytes)
Input A: Number of block to be erased
Output Normal completion: CY=0
Abnormal completion: CY=1
Registers used B
Description of Erases the specified block and performs a blank check.
operation

Table 5-12. Mode Transition Processing (from Self Programming Mode to Normal Mode)

Processing name SelfFlashModeOff

ROM size 31 bytes
Stack size 1 level (2 bytes)
Input None
Output None
Registers used A, X
Description of Releases self programming mode.
operation

Table 5-13. Mode Transition Processing (from Normal Mode to Self Programming Mode)

Processing name SelfFlashModeOn

ROM size 35 bytes
Stack size 1 level (2 bytes)
Input None
Output None
Registers used A, X
Description of Sets self programming mode.
operation

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CHAPTER 5 EEPROM EMULATION PROGRAM (FIXED-LENGTH MULTIPLE-DATA METHOD, ASSEMBLY LANGUAGE)

Table 5-14. Block Erase Processing

Processing name FlashBlockErase

ROM size 15 bytes
Stack size 1 level (2 bytes)
Input A: Block number
Output Normal completion: Zero flag (Z)=1
Abnormal completion: Zero flag (Z)=0
Registers used A
Description of Erases the specified block.
operation

Table 5-15. Flash Self Programming Function Calling Processing

Processing name SubFlashSelfPrg

ROM size 12 bytes
Stack size 1 level (2 bytes)
Input None
Output Normal completion: Zero flag (Z)=1
Abnormal completion: Zero flag (Z)=0
Registers used A
Description of Calls flash self programming function.
operation

Table 5-16. Block Blank Check Processing

Processing name FlashBlockBlankCheck

ROM size 17 bytes
Stack size 1 level (2 bytes)
Input A: Specified block number
Output Normal completion: Zero flag (Z)=1
Abnormal completion: Zero flag (Z)=0
Registers used A
Description of Performs a blank check of the specified block.
operation

Table 5-17. Processing for Setting Block as Valid

Processing name SetValid

ROM size 9 bytes
Stack size 1 level (2 bytes)
Input A: Block number
Output Normal completion: Zero flag (Z)=1
Abnormal completion: Zero flag (Z)=0
Registers used A, X, C, D, E
Description of Sets as valid the block used.
operation

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 CHAPTER 5 EEPROM EMULATION PROGRAM (FIXED-LENGTH MULTIPLE-DATA METHOD, ASSEMBLY LANGUAGE)

Table 5-18. EEPROM Data Write Processing

Processing name FlashEEPROMWrite

<R> ROM size 56 bytes
Stack size 5 levels (10 bytes)
Input DE: Write start address
C: Write data count
AX: Write data storage address
Output Normal completion: Zero flag (Z)=1
Abnormal completion: Zero flag (Z)=0
Registers used D, E
Description of Writes data to EEPROM and internally verifies the data.
operation

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 CHAPTER 5 EEPROM EMULATION PROGRAM (FIXED-LENGTH MULTIPLE-DATA METHOD, ASSEMBLY LANGUAGE)

5.5 Flowchart of EEPROM Emulation Program

5.5.1 Flowcharts of EEPROM emulation access processings

Figures 5-1 and 5-2 show flowcharts of access processings called by users to perform read or write operations as
part of EEPROM emulation.

Figure 5-1. Flowchart of EEPROM Read Processing

[Overview]
The data defined with the structure is read from specified storage address.

__eeprom_read

Searches for currently used blocks

(EEPROMUseBlockSearch)

No
Block found?

Yes
Searches for latest data
(EEPROMDataSearch)

Data found? No

Yes
Store latest data to specified
data area of structure

CY = 0 CY = 1
(read successful) (read failure)

RET

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 CHAPTER 5 EEPROM EMULATION PROGRAM (FIXED-LENGTH MULTIPLE-DATA METHOD, ASSEMBLY LANGUAGE)

Figure 5-2. Flowchart of EEPROM Write Processing

[Overview]
The data of the specified number is written to a valid block from the storage address.

__eeprom_write

Shift to flash mode

(SelfFlashModeOn)

Search for latest block

(EEPROMUseBlockSearch)

Yes
Block found?

No
Specify first valid block Search writable area
(EEPROMBlockInit) (EEPROMWriteTopSearch)

Set smallest block number

to valid block
Yes
Area found?
Write data to EEPROM area
No
(FlashEEPROMWrite)
Change block because there is
no free area
(EEPROMUseBlockChange)

Block change No
successful?
A

Yes
Write successful? Yes

A No
Release flash mode Release flash mode
(SelfFlashModeOff) (SelfFlashModeOff)

CY = 1 CY = 0
(write failure) (write successful)

RET

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 CHAPTER 5 EEPROM EMULATION PROGRAM (FIXED-LENGTH MULTIPLE-DATA METHOD, ASSEMBLY LANGUAGE)

5.5.2 Flowcharts of EEPROM emulation control processings

Figures 5-3 to 5-7 show flowcharts of emulation control processings used during EEPROM emulation.

Figure 5-3. Flowchart of Currently Used EEPROM Block Search Function

[Overview]
The currently used blocks of the flash memory that is allocated as EEPROM is searched.

EEPROMUseBlockSearch

Set start block number

Check valid or invalid flag of block

Yes
Valid block checked?

No
Store valid block number
Move to next block
to CurentB_No

No
All set blocks completed?

Yes
CY = 1 CY = 0
(search failure) (search successful)

RET

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 CHAPTER 5 EEPROM EMULATION PROGRAM (FIXED-LENGTH MULTIPLE-DATA METHOD, ASSEMBLY LANGUAGE)

Figure 5-4. Flowchart of EEPROM Block Initialize Processing

[Overview]
If there are no valid blocks among the blocks specified for EEPROM, the first specified block is set as valid.

EEPROMBlockInit

Set start block number

Erase specified block

(SelfFlashBlockErase)

No
Erased?

Yes
Set block as valid
(Setvalid)

No
Valid flag set?

Yes
CY = 0 CY = 1
(initialize successful) (initialize failure)

Initialize completion

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Figure 5-5. Flowchart of EEPROM Use Block Change Processing (1/2)

[Overview]
If the currently used blocks are full of data, this function searches for the next block to be used and copies data to new
block.

EEPROMUseBlockChange

Set block number of

next block

Erase next block to be used

(SelfFlashBlockErase)

No
Erased?

Yes
Write next block's data
Set start address
1
Initialize data number

4
Data number Yes
to be written?
No
Search latest data
(EEPROMDataSearch)

No
2 Latest data detected?

Yes

Set write data

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 CHAPTER 5 EEPROM EMULATION PROGRAM (FIXED-LENGTH MULTIPLE-DATA METHOD, ASSEMBLY LANGUAGE)

Figure 5-5. Flowchart of EEPROM Use Block Change Processing (2/2)

Write target data

to next block
(FlashEEPROMWrite)
1

No
Write successful?

2 Yes

Set data to be written

next and address

Yes
All data complete?

No
4

Set valid flag to new block

(Setvalid)

No
Is valid flag normal?

Yes
Set invalid flag to old block
(Setinvalid)

No
Is invalid flag normal?

Yes
CY = 0 CY = 1
(update successful) (update failure)

RET

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Figure 5-6. Flowchart of EEPROM Use Block Data Write Top Search Processing

[Overview]
Searches for specified block’s write area.
Completes normally only if the data area fits within the block at 0xFFH.

EEPROMWriteTopSearch

Set specified block’s

start address.

Check data number

No
Is data FF?

Yes
CY = 0
(Search successful)

RET

Update address to be searched

No
End of block?

Yes
CY = 1
(Search failure)

RET

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 CHAPTER 5 EEPROM EMULATION PROGRAM (FIXED-LENGTH MULTIPLE-DATA METHOD, ASSEMBLY LANGUAGE)

Figure 5-7. Flowchart of EEPROM Latest Data Search Processing

[Overview]
Reads the storage address of the latest data.

EEPROMDataSearch

Set data number of

EEPROM area

Yes
Data number matched?

No

Delimiter ≠ 00H
Delimiter checked?

Delimiter = 00H
Copy address to DE register
(return value)

Yes
Is data FF?

No

Update address to be searched

No
Search successful ?

Yes
CY = 0 CY = 1
(Search successful) (Search failure)

RET

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 CHAPTER 5 EEPROM EMULATION PROGRAM (FIXED-LENGTH MULTIPLE-DATA METHOD, ASSEMBLY LANGUAGE)

5.6 List of EEPROM Emulation Processings

A call tree of EEPROM emulation processings is shown below.

Figure 5-8. Call Tree

User access processings EEPROM emulation processings Flash memory control processings

__eerprom_read getpara

EEPROMUseBlockSearch

EEPROMDataSearch

__eeprom_write getpara
SelfFlashModeOn

SelfFlashModeOff

EEPROMUseBlockSearch

EEPROMBlockInit SelfFlashBlockErase FlashBlockBlankCheck

FlashBlockErase

FlashEEPROMWrite
EEPROMWriteTopSearch

EEPROMUseBlockChange SelfFlashBlockErase FlashBlockBlankCheck

FlashBlockErase

FlashEEPROMWrite

SetValid

EEPROMDataSearch SetInvalid

FlashEEPROMWrite

Application Note U17379EJ3V0AN 65

 APPENDIX A REVISION HISTORY

A.1 Major Revisions in This Edition

Page Description
p. 66 in Deletion of APPENDIX A SAMPLE PROGRAM LIST (FIXED-LENGTH SINGLE-DATA METHOD) from old
old edition edition
p. 84 in Deletion of APPENDIX B SAMPLE PROGRAM LIST (FIXED-LENGTH MULTIPLE-DATA METHOD) from old
old edition edition
CHAPTER 2 EEPROM EMULATION FUNCTION (FIXED-LENGTH SINGLE-DATA METHOD)
pp. 9, 10 Modification of the number of erasures of one block, and the maximum number of rewrites in 2.1 Main
Specifications for EEPROM Emulation
p. 17 Addition of caution 2 to, and modification of Remark in Table 2-1 Conditions for EEPROM Emulation
Operations
p. 17 Addition of 2.3 How to Get the Sample Program
CHAPTER 3 EEPROM EMULATION PROGRAM (FIXED-LENGTH SINGLE-DATA METHOD, ASSEMBLYLANGUAGE)
p. 18 Modification of Table 3-2 Resources
p. 19 Modification of 3.3.1 (3) Number of erase retrials
pp. 26, 28 Modification of Table 3-10 Block Erase and Table 3-17 EEPROM Data Write Processing
CHAPTER 4 EEPROM EMULATION FUNCTION (FIXED-LENGTH MULTIPLE-DATA METHOD)
p. 37 Modification of the number of erasures of one block, and the maximum number of rewrites in 4.1 Main
Specifications for EEPROM Emulation
p. 45 Addition of caution 2 to, and modification of Remark in Table 4-1 Conditions for EEPROM Emulation
Operations
p. 45 Addition of 4.3 How to Get the Sample Program
CHAPTER 5 EEPROM EMULATION PROGRAM (FIXED-LENGTH MULTIPLE-DATA METHOD, ASSEMBLY LANGUAGE)
p. 46 Modification of Table 5-2 Resources
p. 47 Modification of 5.3.1 (3) Number of erase retrials
pp. 54, 56 Modification of Table 5-11 Block Erase and Table 5-18 EEPROM Data Write Processing
APPENDIX A REVISION HISTORY
p. 67 Addition of A.2 Revision History of Preceding Editions

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 APPENDIX A REVISION HISTORY

<R> A.2 Revision History of Preceding Editions

Here is the revision history of the preceding editions. Chapter indicates the chapter of each edition.

Edition Description Chapter

2nd Edition Full modification of chapter. CHAPTER 2 EEPROM EMULATION FUNCTION

(FIXED-LENGTH SINGLE-DATA METHOD)

CHAPTER 3 EEPROM EMULATION PROGRAM

(FIXED-LENGTH SINGLE-DATA METHOD,
ASSEMBLYLANGUAGE)

Addition of chapter. CHAPTER 4 EEPROM EMULATION FUNCTION

(FIXED-LENGTH MULTIPLE-DATA METHOD)

CHAPTER 5 EEPROM EMULATION PROGRAM

(FIXED-LENGTH MULTIPLE-DATA METHOD,
ASSEMBLY LANGUAGE)

Full modification of chapter. APPENDIX A SAMPLE PROGRAM LIST (FIXED-

LENGTH SINGLE-DATA METHOD)

Addition of chapter. APPENDIX B SAMPLE PROGRAM LIST (FIXED-

LENGTH MULTIPLE-DATA METHOD)

APPENDIX C RIVISION HISTORY

User’s Manual U17379EJ3V0AN 67

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