PD - 95864

IRF7842
HEXFET® Power MOSFET
Applications
l Synchronous MOSFET for Notebook
VDSS RDS(on) max Qg (typ.)
Processor Power 40V 5.0m:@VGS = 10V 33nC
l Secondary Synchronous Rectification
for Isolated DC-DC Converters
l Synchronous Fet for Non-Isolated A
A
1 8
S D
DC-DC Converters
2 7
Benefits S D

l Very Low RDS(on) at 4.5V VGS S

3 6
D

l Low Gate Charge G

4 5
D
l Fully Characterized Avalanche Voltage
Top View SO-8
and Current

Absolute Maximum Ratings

Parameter Max. Units
VDS Drain-to-Source Voltage 40 V
VGS Gate-to-Source Voltage ± 20
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 18
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 14 A
IDM Pulsed Drain Current c 140
PD @TA = 25°C Power Dissipation f 2.5 W
PD @TA = 70°C Power Dissipation f 1.6
Linear Derating Factor 0.02 W/°C
TJ Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range

Thermal Resistance
Parameter Typ. Max. Units
RθJL g
Junction-to-Drain Lead ––– 20 °C/W
RθJA Junction-to-Ambient fg ––– 50

Notes  through are on page 9

www.irf.com 1
4/26/04
IRF7842
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA
∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.037 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 4.0 5.0 mΩ VGS = 10V, ID = 17A e
––– 4.7 5.9 VGS = 4.5V, ID = 14A e
VGS(th) Gate Threshold Voltage 1.35 ––– 2.25 V VDS = VGS, ID = 250µA
∆VGS(th) Gate Threshold Voltage Coefficient ––– - 5.6 ––– mV/°C
IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS = 32V, VGS = 0V
––– ––– 150 VDS = 32V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
gfs Forward Transconductance 81 ––– ––– S VDS = 20V, ID = 14A
Qg Total Gate Charge ––– 33 50
Qgs1 Pre-Vth Gate-to-Source Charge ––– 9.6 ––– VDS = 20V
Qgs2 Post-Vth Gate-to-Source Charge ––– 2.8 ––– nC VGS = 4.5V
Qgd Gate-to-Drain Charge ––– 10 ––– ID = 14A
Qgodr Gate Charge Overdrive ––– 10.6 –––
Qsw Switch Charge (Qgs2 + Qgd) ––– 12.8 –––
Qoss Output Charge ––– 18 ––– nC VDS = 16V, VGS = 0V
RG Gate Resistance ––– 1.3 TBD Ω
td(on) Turn-On Delay Time ––– 14 ––– VDD = 20V, VGS = 4.5V e
tr Rise Time ––– 12 ––– ID = 14A
td(off) Turn-Off Delay Time ––– 21 ––– ns Clamped Inductive Load
tf Fall Time ––– 5.0 –––
Ciss Input Capacitance ––– 4500 ––– VGS = 0V
Coss Output Capacitance ––– 680 ––– pF VDS = 20V
Crss Reverse Transfer Capacitance ––– 310 ––– ƒ = 1.0MHz

Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy d ––– 50 mJ
IAR Avalanche Current c ––– 14 A

Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 3.1 MOSFET symbol
(Body Diode) A showing the
ISM Pulsed Source Current ––– ––– 140 integral reverse
(Body Diode)c p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 14A, VGS = 0V e
trr Reverse Recovery Time ––– 99 150 ns TJ = 25°C, IF = 14A, VDD = 20V
Qrr Reverse Recovery Charge ––– 11 17 nC di/dt = 100A/µs e
2 www.irf.com
 IRF7842
1000 1000
VGS VGS
TOP 10V TOP 10V
5.0V 5.0V
ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

4.5V 4.5V
3.5V 3.5V
100 3.3V 3.3V
3.0V 3.0V
2.8V
100 2.8V
BOTTOM 2.5V BOTTOM 2.5V

10

10 2.5V
1 2.5V

≤ 60µs PULSE WIDTH ≤ 60µs PULSE WIDTH

Tj = 25°C Tj = 150°C
0.1 1
0.1 1 10 100 0.1 1 10 100

VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000.0 2.0
RDS(on) , Drain-to-Source On Resistance

ID = 18A
VGS = 10V
ID, Drain-to-Source Current (Α)

100.0

1.5
(Normalized)

T J = 150°C
10.0

T J = 25°C 1.0
1.0

VDS = 25V
≤ 60µs PULSE WIDTH
0.1
0.5
1.5 2.0 2.5 3.0 3.5 4.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
www.irf.com 3
IRF7842
100000 12
VGS = 0V, f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED ID= 14A VDS= 30V

VGS, Gate-to-Source Voltage (V)

C rss = C gd 10 VDS= 20V
C oss = C ds + C gd
C, Capacitance (pF)

10000 8

Ciss
6

1000 Coss 4

Crss 2

100
0
1 10 100 0 20 40 60 80
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000.0 1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)

100.0 100
T J = 150°C

10.0 10

1msec
T J = 25°C 1
1.0 10msec
Tc = 25°C
Tj = 150°C
VGS = 0V Single Pulse
0.1 0.1
0.2 0.4 0.6 0.8 1.0 1.2 0 1 10 100 1000
VSD, Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
4 www.irf.com
 IRF7842
18 2.4

16

VGS(th) Gate threshold Voltage (V)

2.0
14
ID , Drain Current (A)

12 ID = 250µA
1.6
10

8
1.2
6

4 0.8

0 0.4
25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150

T J , Junction Temperature (°C) T J , Temperature ( °C )

Fig 9. Maximum Drain Current Vs. Fig 10. Threshold Voltage Vs. Temperature
Case Temperature

100

D = 0.50
10 0.20
Thermal Response ( Z thJA )

0.10
0.05
1 0.02
0.01

Ri (°C/W) τi (sec)
R1 R2 R3
0.1 R1 R2 R3
τJ τC
τJ τ
10.48 0.138167
τ1 τ2 τ3
0.01 τ1 τ2 τ3 26.83 1.8582
Ci= τi/Ri 12.69 44.8
Ci τi/Ri
0.001 SINGLE PULSE Notes:
( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

www.irf.com 5
IRF7842
RDS(on), Drain-to -Source On Resistance ( mΩ)

16 200

EAS, Single Pulse Avalanche Energy (mJ)

ID = 18A ID
TOP 6.7A
160 7.5A
12 BOTTOM 14A

120
8
T J = 125°C
80

4
T J = 25°C 40

0
0
2.0 4.0 6.0 8.0 10.0
25 50 75 100 125 150
VGS, Gate-to-Source Voltage (V)
Starting T J, Junction Temperature (°C)

Fig 12. On-Resistance Vs. Gate Voltage Fig 13c. Maximum Avalanche Energy
Vs. Drain Current

15V
LD
VDS

L DRIVER
VDS +
VDD -
RG D.U.T +
V
- DD D.U.T
IAS A
VGS
20V VGS
tp 0.01Ω
Pulse Width < 1µs
Duty Factor < 0.1%
Fig 13a. Unclamped Inductive Test Circuit

Fig 14a. Switching Time Test Circuit

V(BR)DSS
tp VDS
90%

10%
VGS

I AS td(on) tr td(off) tf

Fig 13b. Unclamped Inductive Waveforms Fig 14b. Switching Time Waveforms
6 www.irf.com
 IRF7842
Driver Gate Drive
D.U.T Period D=
P.W.
Period
+ P.W.

ƒ VGS=10V *
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance D.U.T. ISD Waveform
Current Transformer
+
Reverse
‚
-
„ +
Recovery
Current
Body Diode Forward
Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
 dv/dt
VDD

RG • dv/dt controlled by RG VDD Re-Applied

• Driver same type as D.U.T. + Voltage Body Diode Forward Drop
• ISD controlled by Duty Factor "D" - Inductor Curent
• D.U.T. - Device Under Test

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs

Id
Current Regulator Vds
Same Type as D.U.T.

Vgs
50KΩ

12V .2µF
.3µF

+
V
D.U.T. - DS
Vgs(th)
VGS

3mA

IG ID
Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr

Fig 16. Gate Charge Test Circuit Fig 17. Gate Charge Waveform

www.irf.com 7
IRF7842
SO-8 Package Details
INCHES MILLIMET ERS
DIM
D B MIN MAX MIN MAX
A 5 A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
b .013 .020 0.33 0.51
8 7 6 5 c .0075 .0098 0.19 0.25
6 H D .189 .1968 4.80 5.00
E
0.25 [.010] A E .1497 .1574 3.80 4.00
1 2 3 4
e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BAS IC
H .2284 .2440 5.80 6.20
K .0099 .0196 0.25 0.50
6X e
L .016 .050 0.40 1.27
y 0° 8° 0° 8°

e1 K x 45°
A
C y

0.10 [.004]
8X b A1 8X L 8X c

0.25 [.010] C A B 7

FOOT PRINT
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].
6.46 [.255]
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010].
7 DIMENS ION IS THE LENGT H OF LEAD F OR S OLDERING T O
A S UBS T RAT E.

3X 1.27 [.050] 8X 1.78 [.070]

SO-8 Part Marking

EXAMPLE: T HIS IS AN IRF7101 (MOS FET)
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
Y = LAS T DIGIT OF T HE YEAR
XXXX WW = WEEK
INT ERNAT IONAL F7101 A = AS S EMBLY S IT E CODE
RECTIFIER LOT CODE
LOGO
PART NUMBER
8 www.irf.com
 IRF7842

SO-8 Tape and Reel

TERMINAL NUMBER 1

12.3 ( .484 )
11.7 ( .461 )

8.1 ( .318 )
7.9 ( .312 ) FEED DIRECTION

NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00
(12.992)
MAX.

14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Notes:
 Repetitive rating; pulse width limited by „ When mounted on 1 inch square copper board
max. junction temperature. Rθ is measured at TJ approximately 90°C
‚ Starting TJ = 25°C, L = 0.5mH
RG = 25Ω, IAS = 14A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.4/04
www.irf.com 9