ASEMI MOSFET

CURRENT 9 Ampere
VOLTAGE RANG 900 Volts ASE9N90

„ FEATURES
* RDS(ON) = 1.4Ω @VGS = 10 V
* Ultra Low Gate Charge ( Typical 45 nC )
* Low Reverse Transfer Capacitance ( CRSS = Typical 14 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
TO-220AB ITO-220AB
„ SYMBOL 9N90F
9N90

2.Drain

TO-263 TO-262
1.Gate 9N90B 9N90H

3.Source

PARAMETER SYMBOL RATINGS UNIT

Drain-Source Voltage VDSS 900 V
Gate-Source Voltage VGSS ±30 V
Continuous Drain Current (TC = 25°C) ID 9.0 A
Pulsed Drain Current (Note 2) IDM 36 A
Avalanche Current (Note 2) IAR 9.0 A
Single Pulsed(Note 3) EAS 900 mJ
Avalanche Energy
Repetitive(Note 2) EAR 28 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 4.0 V/ns
TO-247 160 W
TO-3P 240
Power Dissipation
TO-220F1/ TO-220F 49 W
TO-220F2 51
PD
TO-247 1.28
Linear Derating Factor TO-3P 2.22 W/°C
above TC = 25°C TO-220F1/ TO-220F 0.392
TO-220F2 0.408
Junction Temperature TJ 150 °C
Storage Temperature TSTG -55 ~ +150 °C

PARAMETER SYMBOL RATINGS UNIT

TO-247 50
TO-3P 40
Junction to Ambient θJA °C/W
TO-220F1/ TO-220F 62.5
TO-220F2 62.5
TO-247 0.78
TO-3P 0.52
Junction to Case θJC °C/W
TO-220F1/ TO-220F 2.55
TO-220F2 2.45

2022.3 Rev.2.0 2-1 www.asemi99.com

 ASEMI MOSFET
CURRENT 9 Ampere
VOLTAGE RANG 900 Volts ASE9N90

„ ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250μA 900 V
Drain-Source Leakage Current IDSS VDS = 900 V, VGS = 0 V 10 μA
Forward IGSSF VGS = 30 V, VDS = 0 V 100 nA
Gate-Body Leakage Current
Reverse IGSSR VGS = -30 V, VDS = 0 V -100 nA
Breakdown Voltage Temperature Coefficient △ BV DSS /△T J ID=250μA, Referenced to 25°C 0.99 V/°C
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 3.0 5.0 V
Static Drain-Source On-Resistance RDS(ON) VGS = 10V, ID = 4.5A 1.05 1.4 Ω
DYNAMIC PARAMETERS
Input Capacitance CISS 2100 2730 pF
VDS = 25 V, VGS = 0 V,
Output Capacitance COSS 175 230 pF
f = 1.0 MHz
Reverse Transfer Capacitance CRSS 14 18 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) 50 110 ns
VDD = 450V, ID =11.0 A,
Turn-On Rise Time tR 120 250 ns
RG = 25Ω (Note 1, 2)
Turn-Off Delay Time tD(OFF) 100 210 ns
Turn-Off Fall Time tF 75 160 ns
Total Gate Charge QG 45 58 nC
VDS = 720V, ID = 11.0A,
Gate-Source Charge QGS 13 nC
VGS = 10 V (Note 1,2)
Gate-Drain Charge QGD 18 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 9.0 A 1.4 V
Maximum Continuous Drain-Source Diode
IS 9.0 A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM 36 A
Forward Current
Reverse Recovery Time trr VGS = 0 V, IS = 9.0 A, 550 ns
Reverse Recovery Charge QRR dIF / dt =100 A/μs (Note 1) 6.5 μC
Notes: 1. Pulse Test : Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature

2022.3 Rev.2.0 2-2 www.asemi99.com