Scribd
Upload
14 views

Module 4 BJT

The document provides an overview of Bipolar Junction Transistors (BJTs), including their definition, types (NPN and PNP), construction, and working principles. It explains various configurations (Common Base, Common Emitter, Common Collector) and their characteristics, as well as the concept of load line analysis to determine the operating point of a BJT. Key relationships between currents and voltage in different operational regions are also discussed.

Uploaded by

ishantrai33
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
14 views

Module 4 BJT

The document provides an overview of Bipolar Junction Transistors (BJTs), including their definition, types (NPN and PNP), construction, and working principles. It explains various configurations (Common Base, Common Emitter, Common Collector) and their characteristics, as well as the concept of load line analysis to determine the operating point of a BJT. Key relationships between currents and voltage in different operational regions are also discussed.

Uploaded by

ishantrai33
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 7

Module 4: Bipolar Junction Transistor (BJT)

1: Introduction to Bipolar Junction Transistor (BJT)


1.1 Definition
A Bipolar Junction Transistor (BJT) is a three-terminal semiconductor device used for amplification
and switching applications. It consists of two PN junctions formed by sandwiching either P-type or
N-type semiconductor between two opposite types.

1.2 Types of BJT


NPN Transistor – A P-type semiconductor is sandwiched between two N-type semiconductors.

PNP Transistor – An N-type semiconductor is sandwiched between two P-type semiconductors.

1.3 Symbol & Structure


NPN Transistor Symbol:

PNP Transistor Symbol: [Insert PNP Symbol Here]


2: Construction & Working Principle
2.1 Construction
Emitter (E): Heavily doped, supplies charge carriers.
Base (B): Thin and lightly doped, controls carrier flow.
Collector (C): Moderately doped, collects charge carriers.

• Basic relation of three currents of transistors


𝑰𝑬 = 𝑰𝑪 + 𝑰𝑩
2.2 Working Principle
• BJT operates in Cutoff, Saturation, Active, Cutoff, and Breakdown regions.

Base Collector
Operation
IB or VCE Char. and Base Emitter Mode
Region
Junctions

Cutoff IB = Very small Reverse & Reverse Open Switch

Saturation VCE = Small Forward & Forward Closed Switch

Active VCE = Moderate Reverse & Forward Linear Amplifier

Break-down VCE = Large Beyond Limits Overload

In the figure given below

• The direction of arrow tells us the direction of current from Emitter (as this is heavily doped
and responsible for current).
• For normal operation: Emitter-Base Junction is Forward Biased and Collector-Base
Junction is Reverse Biased.

• Considering a NPN Transistor: VBE has positive terminal at P side and negative terminal at N
side. Likewise VCB. VCB >VBE (why??)

• Because Base should be at lower potential w.r.t. Collector then only Collector-Base Junction
will be Reverse Biased.

3: BJT Configurations
3.1 Common Base (CB) Configuration
Input: Emitter-Base
Output: Collector-Base
Current Gain (α): α = IC / IE (Less than 1)

3.2 Common Emitter (CE) Configuration


Input: Base-Emitter
Output: Collector-Emitter
Current Gain (β): β = IC / IB (High, typically 20-200)
Important relation in alpha and beta:

I C = I E
I B = (1 −  ) I E
IC 
= =
IB 1−
3.3 Common Collector (CC) Configuration
Input: Base-Collector
Output: Emitter-Collector
Also called Emitter Follower.

4: Characteristics of BJT
4.1 Input & Output Characteristics

The graph drawn between voltage and current for input and output circuit separately.

• Input Characteristics:
Input Current vs Input Voltage at constant output voltage.

• Output Characteristics:
Output Current vs Output Voltage at constant input current.
Common Base (CB) Configuration
In CB Configuration, the base terminal of the transistor will be common between the input and the output
terminals as shown by Figure. This configuration offers low input impedance, high output impedance, high
resistance gain and high voltage gain.

Input Characteristics for CB Configuration of Transistor

• Below shows the input characteristics of a CB configuration circuit which describes the variation of
emitter current, IE with Base-Emitter voltage, VBE keeping Collector-Base voltage, VCB constant.

Output Characteristics for CB Configuration of Transistor

• The output characteristics of CB configuration show the variation of collector current, IC with VCB when
the emitter current, IE is held constant.

Common Emitter (CE) Configuration

Output Characteristics for CE Configuration of Transistor

• Emitter is grounded.

• Base-Emitter starts to conduct with VBE=0.6V,IC flows and it’s IC=b*IB.

• Increasing IB, VBE slowly increases to 0.7V but IC rises exponentially.


• As IC rises ,voltage drop across RC increases and VCE drops toward ground. (transistor in saturation, no
more linear relation between IC and IB)

BJT as Amplifier :

• Common emitter mode

• Linear Active Region

• Significant current Gain

5: Load Line Analysis


5.1 Concept of Load Line
A graphical method to determine the operating point (Q-point) of a BJT.
Represents all possible combinations of IC and VCE for a given circuit.
5.2 Steps to Draw Load Line

Plotting the Load Line:

Draw a straight line between X-intercept (VCC, 0) and Y-intercept (0, VCC/RC).

Finding Q-Point:
Intersection of load line and transistor characteristic curve gives Q point.

6.3 Significance of Q-Point


Determines biasing stability and amplification efficiency.

You might also like