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Exp-3 UJT Characteristics

The experiment aims to observe and plot the emitter characteristics of a Unijunction Transistor (UJT) using specified equipment. It involves connecting power supplies, measuring emitter current and voltage, and recording observations to demonstrate the negative resistance behavior of the UJT after firing. The results can be used for designing relaxation oscillators.

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11 views2 pages

Exp-3 UJT Characteristics

The experiment aims to observe and plot the emitter characteristics of a Unijunction Transistor (UJT) using specified equipment. It involves connecting power supplies, measuring emitter current and voltage, and recording observations to demonstrate the negative resistance behavior of the UJT after firing. The results can be used for designing relaxation oscillators.

Uploaded by

roshanrohit434
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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EXPERIMENT NO:-3

AIM OF EXPERIMENT :-
To observe & plot the Emitter characteristics of Unijunction Transistor (UJT)
EQUIPEMENTS REQUIRED:-
1. DC Power Supply - 0 to 15V.
2. DC Power Supply - 0 to 30V.
3. Voltmeter-20V.
4. Voltmeter-200V.
5. Ammeter-200mA.
6. Panel No.-P3.
THEORY:- A Unijunction Transistor (UJT) is an electronic semiconductor device that has
only one junction. It has three terminals an emitter (E) and two bases (B1 and B2). The base
is formed by lightly doped n-type bar of silicon. Two ohmic contacts B1 and B2 are attached
at its ends. The emitter is of p-type and it is heavily doped. The resistance between B1 and
B2, when the emitter is open-circuit is called interbase resistance. The original UJT, is a
simple device that is essentially a bar of N type semiconductor material into which P type
material has been diffused somewhere along its length.
The UJT is biased with a positive voltage between the two bases. This causes a potential drop
along the length of the device. When the emitter voltage is driven approximately one diode
voltage above the voltage at the point where the P diffusion (emitter) is, current will begin to
flow from the emitter into the base region. Because the base region is very lightly doped, the
additional current (actually charges in the base region) causes (conductivity modulation)
which reduces the resistance of the portion of the base between the emitter junction and the
B2 terminal. This reduction in resistance means that the emitter junction is more forward
biased, and so even more current is injected. Overall, the effect is a negative resistance at the
emitter terminal.

PROCEDURE:-
1. Make the connections as shown in the circuit diagram below.
2. Voltmeter connected to Base2 will read Vbb & the voltmeter at Emitter will read Ve.
3. Ammeter in the Emitter circuit will indicate the Emitter current le.
4. Turn the voltage control knobs of both Power Supplies to zero position.
5. Now switch on both the Power Supplies and further increase when Ve drops on voltmeter
(UJT fires, Emitter current flows rapidly).
6. Record the corresponding Emitter current for each value of Emitter voltage Ve. Drop in
the Emitter voltage indicates -ve resistance. Repeat the procedure for Vbb = 10 V & 15 V.
7. Plot the graph of Ve versus le using the observations of Table above.
8. Mark the key points on the curve & name it.

Observation Table:-

S.No. Ve (V) Vbb = 10 V Ie (mA)


1. 0
2. 1
3. 2
4. 3
5. 4

S.No. Ve (V) Vbb = 15 V Ie (mA)


1. 0
2. 1
3. 2
4. 3
5. 4

CONCLUSION:-
Characteristics show a negative resistance region after firing of UJT. This behaviour is useful
to design relaxation oscillator.
Sample Graph:-

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