Dat

asheet
RochesterElect
roni
cs Qual
ityOver
view
Manufact
ur edComponents
•I SO-9001
Rochester branded component s ar
e • AS9120certicati
on
manufactured usi
ng eitherdi e/wafer
s • QualiedManufact urer
sList(QML)MIL-PRF-
purchased fr
om the originalsupplier
s 35835
or Rochester wafersr ecreated from •ClassQ Mi
lit
ar y
the ori
ginal IP. Allr ecreati
ons are •ClassVSpaceLevel
donewi t
ht heappr ovaloft heOCM. • QualiedSuppliersListofDistr
ibut
ors(
QSLD)

Partsaret est
ed usi
ngori
ginalf
actory •Rochest
erisacri
ti
calsuppl
iert
oDLA and
testprogramsorRochesterdeveloped meet
salli
ndustryandDLA st
andar
ds.
test sol
utions t
o guar
antee product
meetsorexceedt heOCM datasheet. RochesterEl
ectr
onics,LLC i
scommi tt
edto
suppl
yingproductsthatsat
isf
ycustomerexpecta-
ti
onsforquali
tyandar eequaltothoseor
igi
nal
ly
suppl
iedbyindustrymanufactur
ers.

Theori
ginalmanufacturer’
sdatasheetaccompanyi ngt hisdocumentre ectstheper f
ormance
andspecicationsoftheRochest ermanuf acturedversionofthi
sdevice.Rochest erElect
ron-
i
csguaranteestheper f
ormanceofi tssemiconductorpr oductstotheori
ginalOEM specica-
ti
ons.‘
Typical
’valuesar eforr
eferencepur posesonly.Cer t
ainminimum ormaxi mum rati
ngs
maybebasedonpr oductcharacterizat
ion,design,simulati
on,orsampletesting.

© 2013Roc
hes
terEl
ect
roni
cs,LLC.Al
lRi
ght
sRes
erv
ed07112013 Tol
ear
nmor
e,pl
eas
evi
si
twww.
roc
elec
.com
BTA16-600BW3G,
BTA16-800BW3G

Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
http://onsemi.com
Features
• Blocking Voltage to 800 V TRIACS
• On-State Current Rating of 16 A RMS at 80°C 16 AMPERES RMS
• Uniform Gate Trigger Currents in Three Quadrants 600 thru 800 VOLTS
• High Immunity to dV/dt − 1500 V/ms minimum at 125°C
• Minimizes Snubber Networks for Protection MT2 MT1
• Industry Standard TO-220AB Package G
• High Commutating dI/dt − 4.0 A/ms minimum at 125°C
MARKING
• Internally Isolated (2500 VRMS) 4
DIAGRAM
• These are Pb−Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off−State Voltage (Note 1) VDRM, V
BTA16−xBWG
(TJ = −40 to 125°C, Sine Wave, VRRM TO−220AB
50 to 60 Hz, Gate Open) AYWW
CASE 221A
BTA16−600BW3G 600 1
2 STYLE 12
BTA16−800BW3G 800 3
On-State RMS Current IT(RMS) 16 A x = 6 or 8
(Full Cycle Sine Wave, 60 Hz, TC = 80°C) A = Assembly Location
Peak Non-Repetitive Surge Current ITSM 170 A Y = Year
(One Full Cycle Sine Wave, 60 Hz, WW = Work Week
TC = 25°C) G = Pb−Free Package
Circuit Fusing Consideration (t = 8.3 ms) I2t 120 A2sec
Non−Repetitive Surge Peak Off−State VDSM/ VDSM/VRSM V
Voltage (TJ = 25°C, t = 10ms) VRSM +100 PIN ASSIGNMENT
Peak Gate Current (TJ = 125°C, t = 20ms) IGM 4.0 A 1 Main Terminal 1

Peak Gate Power PGM 20 W 2 Main Terminal 2

(Pulse Width ≤ 1.0 ms, TC = 80°C) 3 Gate
Average Gate Power (TJ = 125°C) PG(AV) 1.0 W 4 No Connection
Operating Junction Temperature Range TJ −40 to +125 °C
Storage Temperature Range Tstg −40 to +150 °C
RMS Isolation Voltage Viso 2500 V ORDERING INFORMATION
(t = 300 ms, R.H. ≤ 30%, TA = 25°C)
Device Package Shipping
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended BTA16−600BW3G TO−220AB 50 Units / Rail
Operating Conditions is not implied. Extended exposure to stresses above the (Pb−Free)
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking BTA16−800BW3G TO−220AB 50 Units / Rail
voltages shall not be tested with a constant current source such that the (Pb−Free)
voltage ratings of the devices are exceeded.

*For additional information on our Pb−Free strategy and

soldering details, please download the ON Semicon-
ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2008 1 Publication Order Number:

December, 2008 − Rev. 1 BTA16−600BW3/D
 BTA16−600BW3G, BTA16−800BW3G

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Case (AC) RqJC 2.13 °C/W
Junction−to−Ambient RqJA 60
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current IDRM, mA
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C IRRM − − 0.005
TJ = 125°C − − 2.0

ON CHARACTERISTICS
Peak On-State Voltage (Note 2) VTM − − 1.55 V
(ITM = ± 22.5 A Peak)

Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 W) IGT mA

MT2(+), G(+) 2.5 − 50
MT2(+), G(−) 2.5 − 50
MT2(−), G(−) 2.5 − 50

Holding Current IH − − 60 mA
(VD = 12 V, Gate Open, Initiating Current = ±150 mA)
Latching Current (VD = 12 V, IG = 50 mA) IL mA
MT2(+), G(+) − − 70
MT2(+), G(−) − − 90
MT2(−), G(−) − − 70
Gate Trigger Voltage (VD = 12 V, RL = 30 W) VGT V
MT2(+), G(+) 0.5 − 1.7
MT2(+), G(−) 0.5 − 1.1
MT2(−), G(−) 0.5 − 1.1

Gate Non−Trigger Voltage (TJ = 125°C) VGD V

MT2(+), G(+) 0.2 − −
MT2(+), G(−) 0.2 − −
MT2(−), G(−) 0.2 − −
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current, See Figure 10. (dI/dt)c 4.0 − − A/ms
(Gate Open, TJ = 125°C, No Snubber)
Critical Rate of Rise of On−State Current dI/dt − − 50 A/ms
(TJ = 125°C, f = 120 Hz, IG = 2 x IGT, tr ≤ 100 ns)
Critical Rate of Rise of Off-State Voltage dV/dt 1500 − − V/ms
(VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

http://onsemi.com
2
 BTA16−600BW3G, BTA16−800BW3G

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 −

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (−) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT − + IGT

(−) MT2 (−) MT2

Quadrant III (−) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

−
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in−phase signals (using standard AC lines) quadrants I and III are used.

http://onsemi.com
3
 BTA16−600BW3G, BTA16−800BW3G

125 20 DC
180°
120 18

PAV, AVERAGE POWER (WATTS)

120°
TC, CASE TEMPERATURE (°C)

115 16
α = 30 and 60° 90°
14
110 60°
α = 90° 12
105
α = 180° α = 120° 10
100 α = 30°
8
95
DC 6
90 4
85 2
80 0
0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 12 14 16
IT(RMS), RMS ON-STATE CURRENT (A) IT(RMS), ON-STATE CURRENT (A)

Figure 1. RMS Current Derating Figure 2. On-State Power Dissipation

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1000 1

Typical @ TJ = 25°C

0.1
Typical @
TJ = −40°C
100

Typical @ TJ = 125°C
I T, INSTANTANEOUS ON‐STATE CURRENT (AMP)

0.01
0.1 1 10 100 1000 1·104
t, TIME (ms)

Figure 4. Thermal Response

10

55
50
Typical @ MT2 Positive
45
IH, HOLD CURRENT (mA)

TJ = −40°C
1 40
35
Typical @ TJ = 25°C
30
25
20 MT2 Negative
Typical @ TJ = 125°C
15
10
0.1 5
0.5 1 1.5 2 2.5 3 −40 −25 −10 5 20 35 50 65 80 95 110 125
VT, INSTANTANEOUS ON-STATE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. On-State Characteristics Figure 5. THold
Typical @ Current Variation
= −40°C
J

http://onsemi.com
4
 BTA16−600BW3G, BTA16−800BW3G

100 1.8
VD = 12 V VD = 12 V
IGT, GATE TRIGGER VOLTAGE (mA)

RL = 30 W 1.6 RL = 30 W
Q1
Q3 1.4

1.2
10
Q2 1
Q1 Q3
0.8
Q2
0.6

1 0.4
−40 −25 −10 5 20 35 50 65 80 95 110 125 −40 −25 −10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Gate Trigger Current Variation Figure 7. Gate Trigger Voltage Variation
dv/dt , CRITICAL RATE OF RISE OF OFF‐STATE VOLTAGE (V/ μ s)

5000
VD = 800 Vpk
TJ = 125°C
4K

3K

2K

1K

0
10 100 1000 10000
RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)

Figure 8. Critical Rate of Rise of Off-State Voltage

(Exponential Waveform)

LL 1N4007
200 VRMS
ADJUST FOR MEASURE
ITM, 60 Hz VAC I
TRIGGER CONTROL

CHARGE
TRIGGER CONTROL -
CHARGE 200 V
+
MT2
1N914 51 W
NON‐POLAR MT1
CL G

Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.

Figure 9. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c

http://onsemi.com
5
 BTA16−600BW3G, BTA16−800BW3G

PACKAGE DIMENSIONS

TO−220
CASE 221A−07
ISSUE O

NOTES:
SEATING
−T− PLANE
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
B F C BODY AND LEAD IRREGULARITIES ARE
T
S ALLOWED.
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
4
A 0.570 0.620 14.48 15.75
Q A B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
1 2 3 U D 0.025 0.035 0.64 0.88
H F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
K H 0.110 0.155 2.80 3.93
Z J 0.014 0.022 0.36 0.55
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
L R Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
V J S 0.045 0.055 1.15 1.39
G T
U
0.235
0.000
0.255
0.050
5.97
0.00
6.47
1.27
D V 0.045 --- 1.15 ---
N Z --- 0.080 --- 2.04

STYLE 12:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. NOT CONNECTED

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com
Literature Distribution Center for ON Semiconductor USA/Canada
P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local
Email: [email protected] Phone: 81−3−5773−3850 Sales Representative

http://onsemi.com BTA16−600BW3/D
6