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Chapter 7-Semiconductors have a unique and

The document discusses semiconductors, including their types, properties, and behavior in electrical conduction. It explains intrinsic and extrinsic semiconductors, the role of charge carriers, and the significance of band gaps. Additionally, it covers concepts such as electron mobility, hole creation, and the effects of temperature on semiconductor behavior.

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0% found this document useful (0 votes)
6 views

Chapter 7-Semiconductors have a unique and

The document discusses semiconductors, including their types, properties, and behavior in electrical conduction. It explains intrinsic and extrinsic semiconductors, the role of charge carriers, and the significance of band gaps. Additionally, it covers concepts such as electron mobility, hole creation, and the effects of temperature on semiconductor behavior.

Uploaded by

g4gy2d60kz
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Ny we ~ Giconductore aro. . celtol_ materieul aon electrical reoich vil bokveor condluctore agit inculaclore . > Most pail useol_sorntooncluctoye are ot, Go, ahs, InP ok : 5 Semiconductor are bipolar _ jet current conduchion can take place by niin a fro oledroxuc tno! = _ Z > They. are specially tort bocowe, by “t vor dlilzoi Ue top oahin a = i ly _concluch’vily Ley. eraitoncctors + Howe icantly high reich hvilj = hoy ha é toniporature coofficieut of resistance“ Cdlecreate in_vecictivilig coils — Increase _in — —_s Thoy._are mooie in naire. = ate O.K, they will behave ! yo Both olectrode and! holae_con be charge _ —_ Proper ‘ as ono. corrigngs > They have itleol_valence _bancl_cunol_an- empty — —_onduechlon atuok . oe Sy Typos of sorniconeluctor9- as oe” ; © Elemental andl compourol semivoreludlrs ~ : _ a) Cemental semiconductors: TE They. are comporealo of sir ie gpl 9 9. Gi unolto gre _ feria “hme Pee Gp 091 &', Go, C._ pb — te _ 6) Gm oundl “sepnioonductore E Sb conductors. which Soe cpanel eee teste at Spa aE ona a nies ~ eg, -y Qe 9% aad re ft OG: Gade, Gab, Tals, Tabs; Gavhsh, All TVW © a Compoueds rmeol_by element Lon IL-and_ Wor cupo are called ITT cio —# Zo, Cle, CdTe., ZaTe - — urd. comicenductore Co Conolehing, of. “thre — lends oe) are cabled ots mer irs with ur _otomg “ernaly callell nde —eee aaa . am nang ttoo_adoma_is a binary cons __ Some _clornends from ea @® periodic table gp. ot Groups . - a OF Ww ve _ —Eeernds B aa - a _ a _ Af pee Oe Te - 7 Ga Ge & _ Pt Maun _aolua f nal somiconductore fone ‘a ore at Set nortan ° — das gape tad tt cba le romge 7 ancty gape and _hi mobilili of “ch = AYVICAS - —@Pireck_anal_ rol Troll bandlgap corn fey -c1re_claseiffiecl on” the ooclud? o - type _emilcsion-— a oe ig te eohen an excited! _€ to_the _ valence band_, De inn oad lobe recorabre. ty produce Lig ht- _Creleage_o._pha:ton) thle hax (photon) a a _ This_proces, te alo callod vadalwe —__ veapmbination. leo knovon ce Spontncatouse emission __ | ¢ eg! Gals, Inf, AlAs SS ——-b) Tholirect banclgap senitortuclors— (Q2- ie Tn an inotirect banolgap _comnlogrcclon —— when an excitect electron - Ff ae op vyatlence kano, ea and isloo recom bine, enorato hoat. anol this eat (9 ee pated 0 ee atorral. UT jez e + bole -sheat. This procow to oleo Jenouon as _non-radiat, reambinahon. Co @Fabrinsie. _anol Extrl pete Semicordhuctors 8) Jntringie_gemiconductore — Purye sormibo.ndlucctors ‘we_culled Tabrinois cemiconductors - D Exdrinsle omiconduchye Hinge ey cbleng. ip —_1n_impurre form, a neal by ack eg — tog Cel jor fo an is pe — Basool on the element _of clo, Cie the. - Irn UG actded)_, ah tedliconluctox _ lenpepelg be “Of two types -_ _ op het sernicdnductoys foe _ @N- Tanta eee © P-type som ieondluctor (a ; TT Lt se Perma by loping a trivaloé pur tb gh ov eee Ga, Dy, B. het us accume , 0 trivalent elornent Ga ie cdded oan! intrinsic comindluctor S- AL/ three valonce electrong of GOavsl form covalout bonds with neighbour Ing cr atone a8 chown roloto oe oo | eontucion bade? G2 a Receptor level? Ga) Ea”! ; EEE] 9 In_neod of an "elecknin. 13 _c@mplote_'ts — fourth et = tatty of ae orba ee pay be suppl pliect by Si — feel crea realiig ctron fole the ilonce._| Yhat “aan ef Alled b elechrous from cbher thon In ae band, tery. cre aby — = vaca — = flo ohown_In tho above figure, UN). “eage sak i ( > The ~> These ples ack ao acep bare of ole chrases OE oun wo sts 7 Wig her energ ae Creal ener, evel aulod “acceptor lo hove 1B once band. Pe Je As the depot afome aceopt clock; oxo, they AP ale calle ‘Accoptore’. = An electron _p mudt9 ain ror fa in erdler to. creode tay aan Te sys acceplor atoma get negatively ionicoc! gerplng elections. fom vail ence banal aby “teore, empen no = This to how ha are_ reat th valonce_ band: anol are realy for onductts —> when uf ANGe_N0.0 coplor atome are Added! , lage of cap the therrally orate lechions! This jv why holer ave roogortty charge carries pe srhicerl = 1 Oat ho fenporabures, acleifsned - Fi a oli “et De clue ~ proatking of calect Brche. sa fo A 6 N- =i Semnicondlesctor. : &e &| ead by. lop ping_a fertavatent — ; 7 7 pul to_an_jntyingic ' &micy <= het us acoune Oo poutawalert phe he _ te added to £1, ae of tho Feats fo _a! er Eth lhe Gi m_oovalont bo, each a ‘Sale as she fie elect) inthe -—wabeunded \ CES fe Coroliuctioy —bou ets) ) =, Extyi oe } KS a electron | Boner tar” te 6i) Vl COM TH OKT a THK. oe extra electron je weakly bounded. see = - atom ancl extero }nfo on energy level in NO — donor tote. just below Uo. cae _ — band: —— -> flo those oleh pe. rie Aig hLly. -bounal pb a a atom Bre 00M tom ras - got called ee Concho bandl_,even—__ — £ a mal! increase tn extornal CNONG Yip eau the parent aon a fonieed.— C® ee cnacte tone th odorn_clonote: olectyons they ara _aleo aaa > _ — loot alone “ - = leat rs th tn rool a, lain i Sl ete tr PF | fb To20k. wea boundl electrone_ tho ee 5 ae ee ae maltori_of hole, so __ Te n0.O, = “i jnerated_h ee tn the te - serniconduclors, F100 elec a the majPrily change _carriore . si ‘high tonpenadures voleut — * fe Lakes ar gh rs td ta hol a A. _fuilibrium Qyrier Ctab'ebre » ce —_ erctence ©, for vel : concerbaon ant tone rake on carrier. tag i or formi: function. _ Ky gives a robablily ef occupa Rs jy tovole by fey fm of nyt | Gy Se fori? ergy mperature anol Boltzmann's => — care haf infeger— spin particles like “electrons. {| = fete onorgy _T uitigy_clifference be bekooon tho hi hock —aal_towwest_ pple ang ee partle-sbalbe Sf of — a ora ar _ ero, 7 — Probate of _an_ electron od ela energy! given by coe pos (ft J (+ [E-EeS | oe ah. - ~ PO} te the fermi function _ _€¢ is the form energ = kes the Boltzmann HY gS) = Tie the absolute. temperature « —— > for a filed level flE)=1 ond fer anfitlecl #E)=0_ 3 Denotly of “lates, Go. of energy stoter per an anit —_velume man energy spice’ ae) _ zdeé = E (8me en dé — oe he a he Panta const. G-626x | GmatTeco) aa te *# Jabeinsie Lemicondluctors — Carrier Con head > “a eno between valence and) cordluechiog id “reletccely ao Very mat! . Hence, ~ an Temperate! some elections. may pastes enough thermal energy tp cress Oler bon gap and one conduction banol. > Theso vecited! electrons . (eave behind aes called ‘Hole’ Jn_an_Intrine cemiconductr, for every excited eo Sahar +> _conductlon_banol, there tc “Thus, mon _inteinele comiconductor oe pea fees reo tes dowily of elechons: = ales of hale. > Hore, whon on _elecly veo 46 fil ao hole, _ = Hon Tole _t2 created! of oviph = tr fil aol — es when _a_voltage ie z-apalea, weoons tn analuchior band_accolefate positr've_ torminal — andl nal bar! re _towarde regu rin &, we com_suy- that conduction takes plac place due ‘to. the movement of both a _corvlore Sin for coal = nee + Npe bali _ ar -npe MU = Intrinsie covrier concentration _— where, a alh = et nobiltios of eloctrone anol holes — ia respectively. - At 0, all enorgy lovele below fermi fovol completely Bue anol above Brevi leat om completely empty “Tamiée concentrabion In Intrineic commonduchy “No. of charge carriers per unit volume a of a_matorial '? catleol carrier concontraton. 7 eee —[eeatuetion — a Ee - , eae Ec — eialgseafe —Bikages er © 9 bans OL led ea, At T=0k. oe & = fermi tovel Crermi —— corel . Mawcimmum energy, eee by an 6a —a bs0 Ecz ~Botlornof condtucticin-karal — cote Eve Top of _vallrce band. — _=$ fig soon _in the < clea yam, n, at _T=0-K, yalence — band's com ST ee ani and conduction band 42 com tele > Noo, a the’ te Pro fae js increased» _elecroxs from valence ian get thermally ¢ exe —____conduchlon_haundl, ‘there ly crectbiy— holec in the valence band. Y 7 TS tek as a facloy aL vatos of GOTTAINn depends on rablo of enemy & Is 1 af gy ayslinn being in ae eo AF ksT CO >. Electrons hn Conduchion bainel bohave_| tke free : rHelee with effective macs mo~ 7 Aho le hohavo ffectsve rbicter In the vale —banol with jocbivo mass mp™. : - Ln pone i can thet oleotrono in conduction bonol_ano! hoes tn _vatonce band, both contribute for olectrical concluchion— =P. Expresion for denstl of Elockrona 0 “conduc he api coat semicondluctor can bo obtained! by in the. alensi g_of-states ee and ard pt jon inom over all — ototes_ let "ema _ ig = -f- ZB E . os = _ cs a = Io-find out clenoila teed we {> Pntegn "@ wrt bottom — band bo! oe os pe = fale aa —® a we 4 the lens tates £ bro ath = 7 athe al ce or fe eden th — - + ae =x (2ne" Hee E t de 5 the eragy #2 0 cheb tn cenaucion bard — — oe *BT clu a eutro of tem. Abopy is the canoe m ony systern fn yen fy rr £-Ee Ge __&,- pecan write 09” © as 2(E)deE = x (ine’)* (E-€e) jede + @ _ now, -subeti tacking : aa in @; = a2 (E-ec)* e fle) © ___| ae Felon Ec) de fle) > obob ingHes' Fe)_of-an electron i fo ret i eas py ° - | real _ — Rang tengo a tad yak than ka L, Co, E-EF >> kat, hence Gorm” denominator af 04” @_con bo_ignaredf ,_— Soo _have _ Fe) = wert a - — 49-2 —-/ke @ Oe eT —3.Noe cubotituding eg? @. in °- : — 3, # oe einer ze il fez z aCe) 2 ee a aa : > solve abow 09”, let uo acoume, €-€c = ¢kepT >» @ a “ €2 € + XkeT > On on differentiating . 7 i Jo dee dx ket > (ii) = Now, based on asoumpbions, Uk it aleo_ _ change» : “when € = Eo, Eom : is Fie 0 dower, = 00 Cuppor tind) — Umi — 2, now: 09! 0D pent Co aaatlga 68 — miere Gere her, kn Ne = = ag kp T -— hz on simplifying. coe gok > a “ _ Te fl tea sengiatyt oS GF fat — _|le= 2 Ce iE of Taken ‘conouachien bond. Tefen Apes of holes In_Valonco ~barnal. Ce oe Dencilg zo al ra be. ated by a Pesclp i iaielage ZlDdE and. prokiubeta Fineten a hole [)- flay oo page the — teats _ from bottom of valence ai se volence_laanel &y : The deusil of holes jg : : (sy - = — nhs {zle) de [i-f©)] A) S — Probobel -of-ahawea = ral al pam ie: Hole—probabililg = == Electron _probabilile me, j=fle = pf oo a) eee) Key] E; =I ae Ci ee rey] — = Hig piso 2 ae oe =Ce)/KBT end with = ¢ ignoring higher pow. — we gek : ee oo ttle tale e-eoher) a Var “eet gy | = -HO= en — . aut ' 1 1) ———Exprossion for Z@E_ for hoo (ase. th - a nat foe forte of for be iota " —teorl| —f 2 de # (amey re: ode - = — Subs tacdng ead n_ @ @, oe —— té ist Td a 3G Na dE aay - | lot uo avoeume : ! pee = a hor 16 J = Cy —XheeT 3s @ rs ey Ue ed ae ay ee ewe een Als when €= © Ez Ev —_ = 00 XzZ0 eel © Oo. a@- anol above. tts in ed Set yee (thar jee ar xia) es a \ arene 7 J . . nhs Ze [8mp,* P 7h (kor Co-ce Year | oR de te 2 (a Fe p an — te noe B z ae ra =Ge)/eBT are = a | = an . — = a EIN | ny 1 Rar X ar Yh “€[kBT — = es = 7 “tone ee alny aX tet We , (eve) [ueT | hz Bm ir dl sm tlc At fermi lovel anol_ts _variatton with tom peredux rey) \ econ n ~ fal a sets vel “Ele at — 1 & | sve con write 3 5 ages le ayer 5 2erefs ‘al opt te as be fo Lev ke (ret Sd (eet =(mb ene = ever“ 7 a CeereoeaT : a a “fae ~ fee =teceeo) fe — ‘| (ee + t tf v2 he ett a Falelng_log_on both bles - Teo eee Anf ms \ [aes } kat me* ket se | fez 3k [mn \ + & Ete 2) _ a os 4 ii “Ue® : G)- __When__1me” = myX ITE 9° @ ek reduced to =e 20] p= > - = Form! lovel 5 ane dor bidden 9p a) the J 4 f —— ; Concie ction karo! { : eo -© 6 @ o [z, | i Se . ahh —- | is middle of WN — > Deperalonce. of eon fempera 1e Ge) EL — (a, er ie —_ Ev aa _ a O00 0 6 5 | a —— Valence bared 1g / SpE fire al i lly Ta — rl Sf ite Seip — 06 toniporofyre ” tnorcas —— me ectae See ele, ibe ah ty “00 prachicatly mo* > nna > This reat ho omatl magulide of: . Thee, Wwe ae thal “fermi lewe! snc seas NCVOQOO » al ~ gid as T} Q9 horon '9 ) . - : ~ lao ef Maca fetion + — = a : or his law states thot for. a gin tener is roducl of chavge carrier concentyr a ~~ a @netont at any given tornpovatore é ae — doping I's varied - a ps ie Ne +n = nie = conta nt. where nj is the _carrier_ancontration (Aloo - cautleg! intrinelo Ca carr lor dlorcity) Based! on law nae VALS ce 7 nj? 2 nexny 7 ie . and k pe hoy gah —__enjts pe Crem. Po OE) 7 =—" Chz ty Gata SD he Know, Eo -Gy = fy — honj = 2 par) > Long’ Sil eee a. = From the apie. equation. it's cloay thot — a oe product of ne-nh loos not. dlependl on Ge, but) yore constant. ab a given tem porature_ — -> Abovo op irettior Qles_ tntrinele camer. “entorba bin. _ fron intrinsic” sormi'cOnduclor _ Nes Nh =n @ / b) : __ + Moebtlily anal Gndlucttuily - Gi. 2 The_chatge carricro are acaumod to be rpvirg freely inotale som icondeector. mm >In tase of on Intrinsic semiconductor, both elecly aval holes. condribufe. to the elechical eonduchiviy. Now, Wwe Know Cay ohm wo) CT=Tfa & Vipze) ils, we_con_siy tat if 'n’ 1s ro.0lk charge. fe carriers_por_unit Volume Cearxior clowsity ina : — conductor_o| tL deal area 'A? , ie currouk prough _aoynductor weg hen by. - ae Te Taial bmg = de ais ‘dp? na.aVAB) = oe eae D2 meAuT= neAva 0 ros) —~ re vobo - CO (® E> hav he Plrck conclant — p Sn lea ee _ Ee deme dom! 6 lim sl = the riaenonitnn hoton (g sort aati > no momentum ten f poss! ble, direct kandl- fo chsitions ave chore nochange o te fir jen ineol- > The procese “ge recomblnahion jis cliveot | Proportional to the amount_of available hole: se oloctrons - papas ohuny trios 40 achieve. thormal ‘@: Ut {Orluymy oe Tn_case_of 00.2 Con ror concenbabion 1 Nh =ni> 0, carrier recombination dbminak. for lo carrier Concent Soentcoee eth eee “@ Phonon _ Transibloy C2bockley- = Read = Haley) J eveckicgs re®rvbinalron ) | Ale aga pt eel — jFecombinethion ee — >| Leo ‘of ' eg a tales aa i ae ria” te He Sorter a Can Cosel a “sony. forelyn atom oy. i com / Kecombinatron : See a gap = : r— mae | fare —— oO = ® a 6 Oo... tn —.d_sten 20 the “liq gram, “tho Hee : | | (6) Hole capture - Lexco2? eno oy Cen the, LLY ja, a cxyatal latte G Phaend—bansen teoto) = aa Camiin[Pom __ a) [Date ss proces ¢___— our Otb- pro — —— rth pur 8 procogscs — | An_eloctron cies edit bard fo reol_by an om in the _bapol_gap.Thic estacale fo_the. ele ther ji leg pp onan ha et with bana Ete aS) Holo omuceion - Energy required Lo ’ Et -Ev. —_—e Alechran Emicai@ + oe cet enyo faethe deep — => Theol ; —_ the electron eine cordluechion banned aE +oconantiabon_of- —holo_c turo_rate_. 2_pre portional to_ho oe Le yation_In vallonce bound. The hole and eke electren emiceion voles one — led —fropa— respockivele... 4 oe 65) ae tater Leonsport.: Diffusion. onal a Dui ——@ duidt_eury vent: The flow of “cha 1Ge_carriore, which ro duo sh fy applied. ipltega—o oY” locke fielol jo cttLlod drift curront . ___-TIp a_semiconcluctor, “thor are two types df hae ca itss— ie holeo. anel elactreto oo. olechone seal plied toa somiconductr, —towarde the ——ttainal of ba baton ind hs hve feud he negative Row of olor | ‘ ee a os free ekection ——+ <—o —— Hato i 1 = Fapeluclor le cotton’ by po 7 ceca line eee dha cont _—term'nal_of ry. But duo to cont nuowe A've —_ calfr'oione ewitth ‘adore they change the director __— ef flow. ~sifech time the ekction chikes an_atom. ft | bounce bats in_random clivechon - The appli! vola ee pec not Fey tho ete positive toymind(. “The ee volocls that an olootion lor holo: achidves , duoy tp applieo! volta, or electric = ig callleol a veld — Vo =o = ee Daft volocilg of holes ie given. nly Vn- whe = Se ae eee te aloe 7 Jez nese E aro Dri Y Tobe } She vem Total ctridt cu vend. —_,, _ Te Jo+Th a 2 newlee + Ne hE a —| : - — fee Gerth | [Camiin[Pam ‘| SES ee Fi) loate L |. I eae a \— @ Diflusion current \; . ea ee Proceso bay. which chara 0 carrion : Thaker cone aby ‘on ae foe rf lowed 5 — On —pcPncenbradhion Ie. cul Oe vot a a fog oa._baiin enor y no. of “oloctions je catle|. ee et Oy) that 1} sce declan” “ie Bled (ower “ore a ee OF. Charge cary lere r ion. of mga? — ) of _lowaor vforeeeia: =n'0n 19 catleol “D Deilhalen Curved -' The abow proces _pecuro in coralconddlerctore Ket uo concider an yh) micand chor rn are eat ; ; ihe. unitorm a co - —lecoe : = Certara tion Jip Velen Cede proce __-», The_ro. of electrons onthe tee Et Sie le oan ofole 2 rao. 8 [thet an evte 20 olortric Lolel “applitd. = Concentrabion— axaclion t. rant - gion? py pega Jou Ane k dt — = Coy =— The—conc entation grodhleytfac_p- ge ao semiconductor is Zivor_ by | —_T.- aco 7 a “le Te lihton a sco dal sa ae if oliso fo elootrone | sie pate teat lel Jo=+e De Ane : | >| Se ce ond asic ut? andl fad ] set = Drift cur rout + Diffusion curvout Jez enue +e Re hae f——___—— — -. «| Ginilacky , > jo Lhe_oum of drift_ Gnd diffus/on Te Drift eowrout + Ditdusion eurrOns 4 [Te nye wne — eD.dhat | dz_| Hath effect : (Edtwoin Hatl in a) ‘acroco_an oloadtrical conclector ee oo magnthe = fielel te apolrool_in_o_olirection por pen clicetlar of the flow-of- conrveut. — Biel : - 2 aon naceg nob fielol rt i fee — tla and — the, velocity at — ‘heh oo we ——havellling. through be. a LL 4 [Calin] rae ~ S On OlOCLY ee «tho: Iotoniz junc. —seagth of of eloctri'a ficlel ig ge the nang nibuc fo 0f_dal_valdago uae ehietteplice! by _ in gc tl ® Camlin| Paw “Topic: 4-23 (Hott _c CO officler wk) z | —The Halt effect 1¢ dleccri bod L by wall coo/s Ry. TH 7 Given by 7 a= whore, ne = jarrler cononbra ti Fi pa wpe oval ne ee to oon while clenobng asl | | coos feu an N-bype material. : je: Rus -_! where net. tho olensi ty nee of cloctrou A_positive sign 19 coal wohile_olenoting Hall coofhried foro p-type m : jo. “Rul whore ny ts the cloncity of Me (wo _knou that > Ba Be or BL 9nA noA Ga A ne - €2 SBRy Ruz E JB | | eu 6.2 vy whore 4) Ie the width of : a material - eee eee wotB Buk T= BR oe wot BL se “Rae Mile whore, _lAy_-#a the Mall ella (3g y te _thitknosce Of Carnal” uoiing thom, the olf cooppfrtouk ‘Ru’ aan be OfminOcf .

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