GATE

WEEKLY TEST-1
EE
POWER ELECTRONICS

Q1 The reverse recovery time of a diode is tRR = 2µs and In the circuit shown below, the maximum value of
dV
the peak reverse current iRR is 50 A. Then the rate of for thyristor is _______ V/µ sec.
dt
fall of the diode current is di/dt = _________A/µs.

Q2 If the latching current for an SCR inserted in between

a dc voltage source of 160 V and the load is 80 mA.
Then the minimum width of gate-pulse current
required to run on this SCR in case the load consists
of R = 25 Ω in series with L = 0.2 H.
(A) 100.63 µ sec
(B) 112.34 µ sec
Q5 Consider a thyristor which has following static IV
(C) 118.42 µ sec
characteristics during forward condition. What will be
(D) 124.32 µsec
the average power loss (in W) in the thyristor when a
Q3 For the circuit shown in the figure below, MOSFET constant current of 50A flow through it for one half
parameters are tr = 1µs. RDS(ON) = 0.5Ω. D = 0.75 and cycle?
f = 50 kHz. The power loss in the ON state will be
________ W.

Q6 The number of SCRs, each rating 400 V, 60 A

required in a parallel combination for a circuit with
total current of 540 A, by assuming derating factor as
11% is _________.
Q4

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Q7 A thyristor operating from a peak supply voltage of

420 V has the following Specifications:
Repetitive peak current,
IP = 100A, [ di ]
dt max
= 80 A/μs. [ dV
dt
]max
= 250 V/μs.
Choosing a factor of safety of 2 for IP
( dt
di
) and ( dv
dt
) and the minimum value of load
max max
resistance is 5 Ω. The values of inductance L and
series resistance RS are respectively.

Q9 Typical switching waveforms are shown in figure. ICS

= 100A, VCC = 250 V, Ton = 2 µs and toff = 3 µs. The
peak values of instantaneous power loss during tON
and tOFF interval respectively are

(A) 6.2 µH and 2.535 Ω

(B) 8.5 µH and 2.755 Ω
(C) 10.5 µH and 3.125 Ω
(D) 12.2 µH and 4.125 Ω

Q8 The SCR in the circuit shown has a latching current of

80 mA. A gate pulse of 45 µs is applied to the SCR.
The maximum value of R in Ω to ensure successful
firing of the SCR is _______.

(A) 4250 W, 4250 W (B) 4250 W, 6375 W

(C) 6250 W, 6250 W (D) 6250 W, 6375 W

Q10 In the circuit shown below, L = 50 µH, C = 50 µH is

initially charged to 200 V. After the switch S is closed
at t = 0. The time at which maximum current passing
through circuit and steady state voltage across
capacitor is

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When the switch closed at 2 ms after the positive zero

crossing of source voltage, the peak value of the
inductor current is measured as 25 A. Then the value
of inductance in mH is ______ (Give the answer up to
two decimal places)

Q12 For an SCR, the gate cathode characteristic has a

(A) 78.54 µ sec, 400 V straight-line slope of 110. For trigger source voltage
(B) 135.56 µ sec, –200 V of 25V and allowable gate power dissipation of 0.6
(C) 78.5 µ sec, – 200 V Watts, what is the gate source resistance?
(D) 135.56 µ sec, 400 V (A) 156.5 Ω (B) 194.5 Ω
(C) 210.5 Ω (D) 228.5 Ω
Q11 A diode circuit feeds an ideal inductor as shown in the
figure. Assume the initial value of inductor current is Q13 For a thyristor, maximum junction temperature is
zero. 140°C. The thermal resistances for thyristor-sink
combination are qje = 0.15°C/W and qes = 0.075°C/W.
Now heat-sink is at a temperature of 76°C. In case the
heat sink is brought down to 67°C by forced cooling,
find the percentage increase in the device rating.
(A) 5.7 % (B) 6.2 %
(C) 6.8 % (D) 7.7 %

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Answer Key
Q1 25~25 Q8 3180~3190

Q2 (A) Q9 (C)

Q3 46~46.5 Q10 (C)

Q4 310~312 Q11 74.5~75.5

Q5 63.5~64 Q12 (D)

Q6 11~11 Q13 (C)

Q7 (C)

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Hints & Solutions

Q1 Text Solution: (C)
25 Q8 Text Solution:
Q2 Text Solution: 3185.41
(A) Q9 Text Solution:
Q3 Text Solution: (C)
46.28 Q10 Text Solution:
Q4 Text Solution: (C)
311.12 Q11 Text Solution:
Q5 Text Solution: 74.92
63.75
Q12 Text Solution:
Q6 Text Solution: (D)
11 Q13 Text Solution:
Q7 Text Solution: (C)

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