_MSE684 Chapter 5 Substrates - Copy
_MSE684 Chapter 5 Substrates - Copy
Microelectronics Packaging
Dr. Nilesh Badwe
Assistant Professor,
Department of Materials Science and Engineering,
IIT Kanpur
5. Substrates
What is a Substrate?
• A dimensionally stable carrier that serve as an interface between ICs and the rest of the components
typically on PCBs in the system
• Contains wiring & interconnects connecting to fine-pitch chip I/Os on top side and coarse pitch board I/Os
on the bottom side
• A single or multi-layer wiring of conductors and insulators formed by thick or thin film processes
• Heat dissipation
• Hermiticity:
• Ceramic, glass, and silicon are hermitic (no moisture or gas absorptions)
• Prevent failures related to corrosion and electromigration
Desired Material Properties - 4
• Good ductility:
• Ceramics, glass, and silicon are brittle à handling concerns during manufacturing with thin,
large panels
• Surface flatness:
• Glass, Si have smooth surfaces
• Helps in fine patterning of Cu traces using photolithography
• Advantages: High rigidity, high thermal stability, low electrical loss, and hermiticity
• Needs sintering temperatures > 1400∘C à • Sintering temperature ~ 850∘C; glassy phases
incompatible with several metals melt at lower temperature, Low Temperature
Co-fired Ceramics (LTCC)
• Typical metals used for conducting lines: Mo, Pt, • Can use high conductivity metals like Cu, Ag, Ni,
Pt-Pd Ag-Pd alloys
Applications of LTCC
• High Performance • RF and mm-wave (5G, 6G): • Automotive and High
Computing: • Low dielectric loss and high Power
precision circuitry enables RF
• Low CTE à high reliability Interconnects • High temperature stability
enables high power
• High dielectric constant for low packages with high
loss RF capacitors reliability
• Layer thickness: 5 – 50 µm
• Subtractive Process:
• Photoresist pattern
• Cu etching to create a pattern
• Photoresist strip-off
Subtractive Process for Core Metallization - 1
• After the via drilling, they are filled with Cu
• Core patterns mainly used for power delivery
• Need thick Cu à feature size not critical à
cheaper subtractive process is used
• Electroless Cu deposition (< 1 µm) for seed
layer followed by Cu electrodeposition
• Electrodeposition:
• Electrolyte: CuSO4, H2SO4 and additives like
brightener and levelers
• Current: Cu2+ + 2e- à Cu
• Final Cu thickness ~ 35 – 50 µm
Cu Electroless Deposition Process
• Smallest achievable feature ~ 100 µm
Subtractive Process for Core Metallization - 2
• Photolithography (3 Steps):
• Lamination of dry-film photoresist (PR)
• UV beam (355 nm) exposure to create desired pattern
• Development of the photoresist
• Subtractive Cu etching
• Alkaline ammonia, hydrogen peroxide–sulfuric
acid, copper chloride
• Stripping of Photoresist
Semi-additive Process
• Build-up layers need fine patterning
• Semi-additive process:
• Deposition (additive) of an electroless Cu seed layer
• Patterning the circuit using electrolytic plating
through a patterned (opened) photoresist mask
• Etching (subtractive) this seed layer from the
undesired areas
• Subtractive part involves removal of very thin Cu
seed layer (0.2-0.4 µm) unlike purely subtractive
process à fine features achievable
• Cleaning steps are critical to ensure good connection
• Most common build-up process flow used in between Cu layers
organic substrate manufacturing • Note: Flat surface with differential Cu electroplating
thicknesses
Properties of Dielectric Materials
• Ajinomoto build up film (ABF™): • BCB (Benzocyclobutene) dielectric:
• Polymer epoxy blended with silica • Low loss tangent
• Loss tangent modified with silica fillers • Needs high temp curing and Poor adhesion
• Most commonly used dielectric in organic substrates
Laser Via Processing
• Laser ablation process is driven by absorption of the laser wavelength by a
particular material i.e. energy absorption à ablation
Stiffener
Si Chip
Organic Substrate
Manufacturing
Process
Shi, S., Tortorici, P., Vadlamani, S. and Chatterjee, P., 2021. Fundamentals of advanced
materials and processes in organic substrate technology. In 3D Microelectronic
Packaging (pp. 397-429). Springer, Singapore.
Organic Substrate Manufacturing (Alternate
Slide)
https://www.youtube.com/watch?v=HiJHMBPcOyg
Routing Example for Multilayer Build-up
• Pitch = 100 µm
• Bump diameter = 40 µm
• Smaller dimensions à Less no. of layers for a given bump size and pitch à Reduced
manufacturing complexities
High Volume Application of Organic
Substrate in CPUs
• Can you find?
• Conformally coated through via
• Conformally coated buried via
• Cu via created through
subtractive process
• Cu via created through semi-
additive process
Substrates for Different Applications
• Glass: Fast cooling of heated viscous mixture of dry material à different drawing process
• Polymer films: liquid or dry film deposition
• Copper: lithography and electrodeposition
Controlled collapse
chip connection,
same as flip chip
• Si - best-understood material
• Silicon used as a interposer on organic substrate or fan-out package substrate;
• Interposer: Usually uses organic substrate as the main substrate for PCB mounting
• Ultra thin films of SiO2 for insulator and copper for conductors
• Applications in mobile processors (iPhone), high performance GPUs (AMD Radeon)
Silicon Substrates Manufacturing
• Silica/SiO2: thermal oxidation or chemical
vapour deposition
• Copper: lithography and
electrodeposition
• Deep reactive ion etching (Bosch process)
used for via formation
• Ti, TiN, Ta layers between SiO2 and Cu as
diffusion barrier
• Passivation layer to prevent bridging:
Silicon nitride (SiNx)
• Secondary passivation polyimide
(Kapton) à stress buffer + adhesion layer
for metal plating
Bosch Process: https://www.youtube.com/watch?v=6Wva2a_4IA4&
Intel’s EMIB Technology (2.5D packaging)
https://www.youtube.com/watch?v=mRQFJFmYMak&
Summary 1
• Substrates: Provide wiring to connect fine pitch ICs (40 – 100 µm) to board with
pitch 400 – 800 µm
• Typical structure includes core, dielectrics, vias, lines, traces, pads, surface
metallization, and passivation layer (solder mask, SiNx etc)