CIVIL 2nd Semester - Basic Electrical Electronics and Instrumentation Engineering Laboratory - BE3272 - Lab Manual (2)
CIVIL 2nd Semester - Basic Electrical Electronics and Instrumentation Engineering Laboratory - BE3272 - Lab Manual (2)
I Year/II Semester
Lab Manual
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BONAFIDE CERTIFICATE
Submitted for the Anna University B.E. (CIVIL) Degree Practical Examination held at Grace
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COURSE OBJECTIVES:
TOTAL: 60 PERIODS
COURSE OUTCOMES:
After completing this course, the students will be able to
CO1: Use experimental methods to verify the Ohm’s law and Kirchhoff’s Law and to measure three phase power
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COURSE OBJECTIVES:
CYCLE - II
6. Load Test on Induction Motor
TOTAL: 60 PERIODS
COURSE OUTCOMES:
After completing this course, the students will be able to
CO1: Use experimental methods to verify the Ohm’s law and Kirchhoff’s Law and to measure three phase power
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INDEX
S. PAGE NO.
DATE TITLE OF THE EXPERIMENT MARKS SIGN
No.
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INDEX
S. PAGE NO.
DATE TITLE OF THE EXPERIMENT MARKS SIGN
No.
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EXP.NO : 1a
DATE:
VERIFICATION OF OHM’S LAW.
AIM:
To practically verify the ohm’s law, for the given electrical circuit with the theoretical calculations.
APPARATUS REQUIRED:
1 RPS
2 Resistor
3 Ammeter
4 Voltmeter
5 Bread board
6 Connecting wires
THEORY:
Ohm’s law states that “At constant temperature, the steady current flowing through the conductor is
directly proportional to the potential difference across the two ends of the conductor”.
FORMULA:
V=I*R
WHERE V – VOLTAGE
I – CURRENT
R -RESISTANCE
PROCEDURE:
1. Connections are made as per the circuit diagram
2. By Varying the Input Voltage, the voltage and the corresponding current values are noted down
for the given Resistor.
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CIRCUIT DIAGRAM:
THEORETICAL CALCULATION:
OBSERVATION TABLE
RESULT:
Thus Ohm’s law has been verified both theoretically and practically.
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EXP.NO: 1b
DATE:
AIM:
To verify (i) Kirchhoff’s current law (ii) Kirchhoff’s voltage law
APPARATUS REQUIRED:
1 RPS
2 Resistor
3 Ammeter
4 Voltmeter
5 Bread board
6 Connecting wires
PROCEDURE:
1. Connect the circuit as per the circuit diagram.
2. Switch on the supply.
3. Set different values of voltages in the RPS.
4. Measure the corresponding values of branch currents I 1, I2 and I3.
5. Enter the readings in the tabular column.
6. Find the theoretical values and compare with the practical values
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FORMULA:
OBSERVATION TABLE
S.No V I1 I2 I3 I1 = I 2 + I 3
(Volts) (mA) (mA) (mA) ( mA)
THEORETICAL CALCULATION
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S.No. V I1 I2 I3 I1 = I2 + I 3
(Volts) (mA) (mA) (mA) ( mA)
OBSERVATION TABLE:
S.No. V V1 V2 V3 V = V1+
V2
Volt Volt Volt Volt
s s s s +V3
Volts
PROCEDURE:
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THEORETICAL CALCULATION:
S.No. V V1 V2 V2 V = V1+ V2 + V3
Volts Volts Volts Volts Volts
RESULT:
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EXP.NO: 2
DATE:
AIM:
APPARATUS REQUIRED:
THREE PHASE VARIABLE LOAD, AMMETERS 0-10 A, MI, 2NOS, WATTMETERS 0-5 A, 300V,2
NOS, VOLTMETER 0-300V,MI
FUSE RATING:
PRECAUTIONS:
1. Connections should be tight.
2. Take the readings carefully.
3. Switch off the circuit when not in use.
THEORY:
Surprisingly, only two single phase wattmeters are sufficient to measure the total power consumed by a three
phase balanced circuit. The two wattmeters are connected as shown in figure. The current coils are connected
in series with two of the lines .The pressure (or voltage ) coils of the two wattmeters are connected between
that line and reference.
PROCEDURE:
1. Connect the circuit as shown in figure.
2. Keep the three phase variac at its zero position .
3. Switch on the main supply.
4. Increase the voltage supplied to the circuit by changing the positions of variac so that all the meters give
readable deflection.
5. Note down readings of all the meters
CIRCUIT DIAGRAM :
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TABULATION:
MODEL CALCULATION:
RESULT:
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EXP.NO: 3
DATE:
AIM:
To conduct load test on DC shunt motor and to find efficiency.
APPARATUS REQUIRED:
PRECAUTIONS:
PROCEDURE:
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FORMULAE:
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Where,
9.81 = gravity constant , R = radius of brake drum , N = speed in RPM
MODEL CALCULATION:
RESULT:
Thus the load test on DCshunt motor was performed and the performance graphs were
drawn.
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EXP.NO: 4
DATE:
LOAD TEST ON SELF EXCITED DC GENERATOR
AIM:
To conduct OCC and load test of a self excited DC generator and to plot the internal and external
characteristics.
APPARATUS REQUIRED:
3 Rheostat 1250Ω,0.8A 1
PRECAUTIONS:
Field rheostat of motor should be kept at minimum resistance position.
Field rheostat of generator should be kept at minimum resistance position.
PROCEDURE:
OC TEST:
1. Connect as per the circuit diagram.
2. Close the DPST switch.
3. Start the motor using three point starter.
4. By keeping the field current (If) as constant value, adjust the
armature rheostat and note down the corresponding armature
voltage and motor speed.
5. Adjust the potential divider and note down ammeter and
voltmeter readings.
LOAD TEST:
1. Connect as per the circuit diagram.
2. Close the DPST switch.
3. Start the motor using three point starter.
4. By keeping the armature voltage as constant value, adjust the field rheostat and note
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TABULATION:
OPEN CIRCUIT CHARACTERISTICS:
Field Generated
S.no current If voltage Va
Amps volts
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LOAD CHARACTERISTICS:
MODEL GRAPH:
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MODEL CALCULATION:
RESULT:
The direct load test on the given self-excited DC generator has been
conducted and the internal & external characteristics are plotted.
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EXP.NO: 5
DATE:
LOAD TEST ON SINGLE PHASE TRANSFORMER
AIM:
To conduct load test on single phase transformer and to obtain percentage efficiency &
regulation.
APPARATUS REQUIRED:
FUSE RATING:
PRECAUTIONS:
The autotransformer should be kept at minimum voltage position.
Before switching off the supply the variac should be brought back to0 minimum voltage
position.
PROCEDURE:
1. Connect as per the circuit diagram.
2. Close the DPST switch.
3. Start the motor using auto transformer starter.
4. Note down the readings of primary and secondary side.
5. Repeat the procedure until it reaches rated current value.
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CIRCUIT DIAGRAM :
TABULATION:
FORMULAE:
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MODEL CALCULATION:
RESULT:
Thus the load test on single phase transformer was performed and the
respective graph were plotted.
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EXP.NO: 6
DATE:
LOAD TEST ON INDUCTION MOTOR
AIM:
To conduct load test on the given single phase induction motor and to plot its
performance characteristics.
APPARATUS REQUIRED:
FUSE RATING:
PRECAUTIONS:
1. The auto transformer is kept at minimum voltage position.
2. The motor is started at no load condition.
PROCEDURE:
1. Connections are given as per the circuit diagram.
2. The DPST switch is closed and the single phase supply is given.
3. By adjusting the variac the rated voltage is applied and the corresponding no load
values of speed, spring balance and meter readings are noted down. If the wattmeter
readings show negative deflection on no load, switch of the supply & interchange the
terminals of current coils (M & L) of the wattmeter. Now, again starting the motor
(follow above procedure for starting), take readings.
4. The procedure is repeated till rated current of the motor.
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5. The motor is unloaded, the auto transformer is brought to the minimum voltage
position, and theDPST switch is opened.
CIRCUIT DIAGRAM :
TABULATION:
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MODEL GRAPH:
MODEL CALCULATION:
RESULT:
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EXP.NO: 7
DATE:
CHARACTERISTICS OF PN AND ZENER DIODES
AIM:
The purpose of the experiment is to examine (i) the characteristics of Silicon PN junction diode. (ii) the
characteristics of Zener diode
APPARATUS REQUIRED:
1N4007 silicon rectifier diode , 1Z5V6 Zener diode, 1 kΩ resistor, ¼ W 0-30 V dc regulated power supply ,
(0-50)mA, (0–100)µA dc ammeter, (0–1)V, (0-30)V, (0 – 10)V dc voltmeter, Breadboard
THEORY:
PN Junction diode is a device made up of a junction of n-type and p-type semiconductor material. An ideal
diode has two regions: a conduction region of zero resistance and a non-conduction region of infinite
resistance. In forward bias operation, the silicon diode will not conduct significant current until the voltage
reaches about 0.7V, called cut-in voltage. In reverse bias operation, the diode will not conduct significant
current until certain threshold voltage called breakdown voltage.
Zener diode Diodes which are designed with adequate power dissipation capabilities to operate in the
breakdown region are known as avalanche, breakdown, or Zener diodes. Zener diodes are heavily doped
diodes. It behaves as ordinary diode in the forward bias mode. Zener diodes are employed as voltage-
reference or constant-voltage devices.
PROCEDURE:
PN Junction diode Characteristics
Forward Bias
1. Construct the circuit as per the diagram shown in figure1.
2. Vary the power supply voltage in steps of 0.1V upto cut-in voltage and thereafter in steps of 1V upto a
maximum of 10V.
3. Note down the voltage drop across the diode and the corresponding current.
4. Plot the graph: IF against VF
5. From the plot, find the static resistance, R = VF / IF.
6. Find also the dynamic resistance, r = VF /Δ IF.
Reverse Bias
1. Connect the circuit as per the diagram shown in figure2.
2. Vary the power supply voltage in steps of 1V upto 15V.
3. Note down the voltage drop across the diode and the corresponding current.
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TABULATION:
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MODEL GRAPH:
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RESULT:
The V-I characteristics and Regulation characteristics of a PN junction diode and zener diode
are observed.
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EXP.NO: 8
DATE:
CHARACTERISTICS OF BJT, SCR AND MOSFET
AIM:
APPARATUS REQUIRED:
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THEORY:
The transistor is a two junction, three terminal semiconductor device which has three regions namely the
emitter region, the base region, and the collector region. The current conduction in transistors takes place due
to both charge carriers- that is electrons and holes and hence they are named Bipolar Junction Transistors
(BJT).
An SCR is a 4-layer, 3-junction, 3-terminal device. When anode is positive w.r.t cathode, the curve between
VAK and IA is called the forward characteristics. During forward bias condition, the junction J2 is reverse
biased and when across J2 above break over voltage (VBO), J2 breaks down and heavy current will flow in
the device. Hence a load resistance is always connected in series with the SCR to limit the anode current to
safe value
A MOSFET (Metal oxide semiconductor field effect transistor) has three terminals called Drain, Source and
Gate. MOSFET is a voltage controlled device. It has very high input impedance and works at high switching
frequency.
PROCEDURE:
1. Make the connections as per the circuit diagram. 2. Switch ON the regulated power supply. Apply some
constant voltage say 30V by varying VAK source. 3. Gradually increase the gate current by varying VGK
source till the SCR becomes ON. Note down the corresponding value of IG from the milliammeter. Then
decrease VAK and VGK to minimum. 4. Set gate current equal to noted value in step 3 by varying VGK
source. 5. Gradually increase VAK in steps of 2V and for each step note down the value of VAK and IA , and
then reduce VAK to minimum. 6. Set gate current to some other value (preferably higher than that of the value
set in step 3) 7. Repeat step 5. 8. Plot a graph of VAK versus IA for different values of IG.
CIRCUIT DIAGRAM :
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TABULATION:
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RESULT:
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EXP.NO: 9
DATE:
DESIGN AND ANALYSIS OF HALF WAVE AND FULL WAVE RECTIFIERS
AIM:
To study the characteristics of half wave, full wave and bridge rectifier
APPARATUS REQUIRED:
CIRCUIT DIAGRAM :
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TABULATION:
MODEL GRAPH:
RESULT:
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EXP.NO: 10
DATE:
MEASUREMENT OF DISPLACEMENT OF LVDT
AIM:
APPARATUS REQUIRED:
THEORY:
LVDT (LINEAR VARIABLE DIFFERENTIAL TRANSFORMER) The most widely used inductive
transducer to translate the linear motion into electrical signals is the linear variable differential transformer
(LVDT). The basic construction of LVDT is shown in fig:
CIRCUIT DIAGRAM :
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TABULATION:
MODEL GRAPH:
RESULT:
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All 2nd Semester Subjects
Professional English - II - HS3252 Engineering Graphics - GE3251
Statistics and Numerical Methods - Physics for Electronics Engineering -
MA3251 PH3254
Physics for Electrical Engineering - Physics for Civil Engineering - PH3201
PH3202
Materials Science - PH3251 Basic Electrical and Electronics
Engineering - BE3251
Physics for Information Science - Basic Civil and Mechanical Engineering -
PH3256 BE3255
Basic Electrical and Instrumentation Electric Circuit Analysis (Circuit
Engineering - BE3254 Theory) - EE3251
Programming in C - CS3251 Circuit Analysis - EC3251
Data Structures Design - AD3251