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Emerging
Non-volatile
Memory
Technologies
Physics, Engineering, and Applications
Emerging Non-volatile Memory Technologies
Wen Siang Lew Gerard Joseph Lim
• •
Emerging Non-volatile
Memory Technologies
Physics, Engineering, and Applications
123
Editors
Wen Siang Lew Gerard Joseph Lim
School of Physical and Mathematical School of Physical and Mathematical
Sciences Sciences
Nanyang Technological University Nanyang Technological University
Singapore, Singapore Singapore, Singapore
© The Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature
Singapore Pte Ltd. 2021
This work is subject to copyright. All rights are solely and exclusively licensed by the Publisher, whether
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illustrations, recitation, broadcasting, reproduction on microfilms or in any other physical way, and
transmission or information storage and retrieval, electronic adaptation, computer software, or by similar
or dissimilar methodology now known or hereafter developed.
The use of general descriptive names, registered names, trademarks, service marks, etc. in this
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Singapore
Preface
v
vi Preface
This book is a timely resource that discusses the physics and applications of
spintronic and RRAM devices. The first part of the book mainly discusses spin-
tronic devices such as nano-oscillators, domain wall memory, nano-magnetic and
programmable logic, circuit design, as well as their applications in neuromorphic
engineering, while the second part of the book focuses on RRAM device physics
and array architectures, various device characterizations and modelling, its imple-
mentation as a synaptic device, and specific application on automatic sound clas-
sification. The content of the book covers the interdisciplinary area of device
physics, material science and engineering, circuit design, and neuromorphic engi-
neering. This book provides fundamental insight into emerging memory tech-
nologies, as well as comprehensive research findings, challenges, and prospects in
these areas. Thus, it can be used as a reference for scientists and engineers of
various backgrounds, who wish to gain understanding from the basics to the more
advanced aspect of the corresponding fields.
Spintronic-based Devices
Microwave Oscillators and Detectors Based on Magnetic
Tunnel Junctions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
P. K. Muduli, Raghav Sharma, Dhananjay Tiwari, Naveen Sisodia,
Afshin Houshang, O. G. Heinonen, and Johan Åkerman
Spin Transfer Torque Magnetoresistive Random Access Memory . . . . . 45
Wai Cheung Law and Shawn De Wei Wong
Current-Driven Domain Wall Dynamics in Magnetic Heterostructures
for Memory Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103
Sachin Krishnia and Wen Siang Lew
Electric-Field-Controlled MRAM: Physics and Applications . . . . . . . . . 149
James Lourembam and Jiancheng Huang
Chiral Magnetic Domain Wall and Skyrmion Memory Devices . . . . . . . 175
Kyujoon Lee, Dong-Soo Han, and Mathias Kläui
Circuit Design for Non-volatile Magnetic Memory . . . . . . . . . . . . . . . . . 203
Tony Tae-Hyoung Kim
Domain Wall Programmable Magnetic Logic . . . . . . . . . . . . . . . . . . . . 225
Sarjoosing Goolaup, Chandrasekhar Murapaka, and Wen Siang Lew
3D Nanomagnetic Logic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 259
Markus Becherer
Spintronics for Neuromorphic Engineering . . . . . . . . . . . . . . . . . . . . . . 297
Gerard Joseph Lim, Calvin Ching Ian Ang, and Wen Siang Lew
vii
viii Contents
1 Introduction
The theoretical prediction of the spin-transfer torque (STT) effect in the year 1996
constituted a remarkable breakthrough in the development of spintronics. This predic-
tion made independently by Slonczewski [1] and Berger [2] after the 1988 discovery
of giant magnetoresistance (GMR) [3, 4] and the first report of high tunneling magne-
toresistance (TMR) in room-temperature magnetic tunnel junctions (MTJ) in 1995 [5,
6]. STT made possible new methods of manipulating magnetization dynamics using
spin-polarized currents instead of magnetic fields, opening several opportunities for
the development of novel spintronics devices. The two most important types of STT
devices are (i) magnetic memories, such as magnetoresistive random-access mem-
ories (MRAM) [7, 8], and (ii) nanoscale microwave signal generators/detectors. In
this chapter, we will focus on the second application of STT. The reader may also
refer to reviews of STT-based MRAM and STNOs in Ref. [9–15].
The basic principle of operation of an STNO is illustrated in Fig. 1. When electrons
pass through the thick fixed magnetic layer, their spins become aligned with the
magnetization of this layer. When these spin-polarized electrons enter the free layer,
after passing through the non-magnetic/insulating barrier, they exert a torque on
the local magnetization of the free layer if current is sufficiently high, i.e. more
than some threshold value. It can lead to magnetization switching if the torque is
sufficiently large. Smaller torque values result in magnetization precession around
the effective magnetic field. In the general case, an STNO consists of a nanopillar
with a giant magnetoresistance (GMR) or a magnetic tunnel junction (MTJ) structure.
The oscillation of the magnetization is detected as a microwave or radio frequency
(RF) voltage signal by virtue of either the GMR or TMR effect (Fig. 1c).
STNOs are particularly useful in wireless telecommunications, where they offer
several advantages over commercially used oscillators, such as yttrium iron gar-
net (YIG) tuned oscillators (YTOs), dielectric resonator oscillators (DROs) based
on YIG, and semiconductor-based voltage-controlled oscillators (VCOs). These
advantages include a very wide frequency tuning range [16–19], high modulation
rates [20–26], submicron footprints [27], and compatibility with standard comple-
mentary metal oxide semiconductor processes [7, 8]. However, low output power and
high linewidth are the main limitations for commercialization of STNOs. MTJ-based
STNOs offer significantly greater output power than metallic GMR-based STNOs,
and have recently reached 10 µW [28], in vortex based MTJ oscillators, which meets
the requirements of commercial applications. However, the frequency of operation
of such vortex STNOs is around 300 MHz, and hence they do not take full advan-
tage of the wide-frequency tunability of STNOs, which can usually be tuned in the
1–65 GHz range [17]. STNOs have the capability to go beyond 200 GHz [29] with
Microwave Oscillators and Detectors Based … 5
conventional materials in high fields, and can even reach the terahertz range [30]
with the use of antiferromagnets.
MTJ nanopillars can also be used to rectify radio frequency (RF) signals through
spin-transfer torque [31–36]. With an RF current injected into an MTJ nanopil-
lar, a dc voltage develops over the device when the frequency of the RF current
is close to the eigenfrequency of the nanomagnet. Thus, an MTJ nanopillar can
act as a microwave detector, also known as spin-torque diode (STD). For applica-
tions, a high sensitivity—defined as the ratio of the voltage detected to the input RF
power—is required. Preliminary calculations predicted that optimized MTJs should
reach sensitivities exceeding 10,000 mV/mW [37]. With advances in the design
of the MTJs in terms of tunneling magnetoresistance (TMR) effect and voltage-
controlled magnetocrystalline anisotropy (VCMA) and with improvements in the
understanding of strong nonlinear effects such as stochastic resonance [38] and non-
linear resonance [35, 36], the sensitivity performance of STD has reached values as
high as 105 mV/mW, exceeding that of semiconductor Schottky diode detectors at
room temperature. These results open a path for the design of a new generation of
high-sensitivity microwave detectors for wireless power transfer, which can rectify
microwave power from different energy sources, such as satellite, sound, television,
and Wi-Fi signals. The resulting dc voltage could be used to operate low-powered
nanodevices [39].
Spin waves can be excited by thermal excitations in MTJ nanopillars in the presence
of an external field. A frequency domain spectrum of the time-varying magnetization
in the MTJ will reveal that magnetic moments can oscillate at several different fre-
quencies. Each of these coexisting frequencies is called a frequency eigenmode. The
study of these modes gives an insight into the coherence of spin motion inside the
ferromagnet. Because the excited spin waves are contained mostly in the ferromag-
netic material and die out fast outside it, different spin wave modes are excited only
from the magnetic part of the nanopillars—i.e., the free layer and the fixed layer.
Moreover, as the fixed layer is pinned strongly in one particular direction due to
exchange bias, a very high field is usually required to excite spin waves in it. Figure 2
shows the field variation of the excited spin wave modes in an MTJ nanopillar as
reported in Ref. [40]. The MTJ investigated in [40] had a circular cross-section with
a diameter 240 nm consisting of multilayers of IrMn (5)/CoFe (2.1)/Ru (0.81)/CoFe
(1)/CoFeB (1.5)/MgO(1)/CoFeB (3.5) (thicknesses in nm). The bottom CoFeB layer
is the pinned layer (PL), the composite CoFe/CoFeB represents the reference Layer
(RL), and the top CoFeB layer is the free layer (FL). All the layers are magne-
tized with the magnetization in-plane. The tantiferromagnetic IrMn layer provides
exchange bias on the CoFe pinned layer (PL), which tends to keep its magnetiza-
tion direction in a fixed direction. The PL is strongly coupled antiferromagnetically
through 0.81 nm thick Ru layer to the composite CoFe/CoFeB fixed layer, or refer-
6 P. K. Muduli et al.
Fig. 2 Field-excited spin wave modes in an MTJ nanopillar. a Three different modes originating
from free and fixed layers at different applied external fields. Depending on the direction of the
applied field, the free and fixed layers can be aligned parallel (P state) or antiparallel (AP state) to
each other. Here, FLP1 and FLAP1 represent the free layer modes in the P and AP configurations,
respectively. RLAP1 represents the reference layer mode in the P state. b shows similar modes
obtained using simulations (open squares, triangles, diamonds, and circles). The crossover from
increasing frequency modes (<800 Oe) to decreasing frequency modes (>800 Oe) is qualitatively
and quantitatively reproduced in the simulations. c and d show the eigenmode distribution (the
amplitude of the magnetization oscillations) of the lowest frequency mode at applied fields of 400
Oe and 1000 Oe. A dominant bulk-like mode in FL (RL) can be seen at 400 Oe (1000 Oe). Reprinted
with permission from Muduli et al. [40] copyright (2011) by the American Physical society
Zhang et al. [44] have pointed out that spin torque not only has the in-plane component
predicted by Slonczewski [1] and Berger [2], but also possesses a perpendicular com-
ponent. The in-plane torque (TIP ) is also referred to simply as the spin-transfer torque
(STT), τ , while the perpendicular or out-of-plane torque (TOOP ) is also referred to
as the field-like torque (FLT), τ⊥ . The in-plane torque τ lies in the plane defined by
the magnetization of the fixed layer Mfixed and the magnetization of the free layer
Mfree , while τ⊥ points out of the plane defined by Mfixed and Mfree , as shown in Fig. 1.
The FLT τ⊥ is small in metallic systems such as spin valves [45–47], but much
larger (∼ 40% of τ ) in MTJs [48], where it significantly affects the magnetization
dynamics. In order to control the magnetization using spin-torque effects, the FLT
τ⊥ needs to be known and understood. However, the magnitude of this component
is both difficult to calculate [49–51] and to measure.
The magnetization dynamics of the free layer, including both these torques, can
be described by the Landau–Lifshitz–Gilbert–Slonczewski (LLGS) equation:
d m̂ d m̂ γ
= −γ [m̂ × Ĥeff ] + α m̂ × + [aj (m̂ × (m̂ × p̂)) + bj (m̂ × p̂)]
dt dt μ0 MS
(1)
where m̂ is the normalized magnetic moment (|m̂| = Mfree /Msat ), γ is the gyromag-
netic ratio of the electron, Msat is the saturation magnetization, Ĥeff is the effective
8 P. K. Muduli et al.
external field, and p̂ is the direction of the fixed layer with φ as the angle between
free and fixed layer. The coefficients aj and bj represent the strengths of τ and τ⊥
respectively. When current is injected into the free layer, depending on the current
direction, τ will either support the damping or act opposite as an anti-damping
source. However, τ⊥ can simulate the action of the field on Mfree , which can also
modify the energy variations in the free layer magnetization.
Measuring the spin-torque magnitude and direction in MTJ-STNOs, especially
as a function of bias voltage, is crucial for both fundamental understanding and for
applications. However, this is not a trivial task, since these measurements are often
subject to experimental artifacts. Despite significant progress, there is controversy
about the bias dependence of τ and τ⊥ in MTJ-STNOs, with results so far disagreeing
both qualitatively and quantitatively [32, 33, 52–55]. Theoretical works are also far
from conclusive, as both quadratic [49, 51] and linear dependence [56] of the τ⊥ on
bias voltage are predicted.
Sankey et al. [32] measured the perpendicular spin-torque component by fitting
the line shape of spin-torque ferromagnetic resonance (ST-FMR) to elliptical MgO
MTJs. ST-FMR is a common technique for measuring spin torque by applying an RF
current to the MTJs. They showed that the perpendicular spin torque is quadratic in
applied voltage, in good agreement with the first-principle calculations by Heileger
and Stiles [51]. Similar measurements have also been carried out on MgO MTJs
by Kubota et al. [57]. The results of Sankey et al. [32] and Kubota et al. [57] are
summarized in Fig. 3.
On the other hand, Petit et al. [52] measured the change in resonance frequency
as a function of bias current in circular Al2 O3 -based MTJs and concluded from the
observed changes that the τ⊥ is linearly proportional to the biasing current density,
and thus changes sign with bias voltage. This result was in qualitative agreement
with the measurement of Li et al. [50], who extracted the perpendicular torque by
Fig. 3 Measured bias dependence of perpendicular torque showing quadratic behavior. a Magni-
tudes of perpendicular torquance (d τ⊥ /d V ) determined from room temperature ST-FMR signals for
three different values of applied magnetic field. Adapted by permission from Macmillan Publishers
Ltd: (Nature Physics) Sankey et al. [32], copyright (2008). b The bias dependence of perpendic-
ular torque showing experimental and calculated results. Adapted by permission from Macmillan
Publishers Ltd: (Nature Physics) Kubota et al. [33], copyright (2008)
Microwave Oscillators and Detectors Based … 9
measuring the switching current of MgO MTJs, and by carefully accounting for heat-
ing effects due to the rather large current densities required for switching. However,
since the measurements by Li et al. [50] were based on switching currents, the voltage
range used was necessarily higher, approximately 0.5 V–1.0 V, than those of Sankey
et al. [32] and Kubota et al. [57]. Measurements of the perpendicular spin-torque
effect in asymmetric MgO MTJs (where the fixed and free layers were not identical)
were carried out by Oh et al. [54]. The perpendicular spin torque τ⊥ was obtained
by fitting plots of the FL magnetic configuration relative to that of the fixed layer as
function of applied external field and bias voltage, and showed that there is a linear
term in the dependence of perpendicular spin-torque effective field on bias voltage,
in addition to a quadratic one, in agreement with theoretical predictions [58].
In Fig. 4, we summarize two recent experiments [40, 55] in which τ⊥ was obtained
from the measurement of resonance frequency. The resonance frequency depends on
τ⊥ as follows [52]:
d ωr
−2αaj /j + bj /j (2)
dj
Since α 1, the FLT term bj has a pronounced effect on the resonance frequency
and shows a strong linear dependence on the bias, as shown in Fig. 4a, b. Both these
studies show that the perpendicular torque varies linearly with bias voltage (for a
certain range of bias voltages) even for nominally symmetric MTJs, and that any
quadratic term is negligible.
In a recent work by Tiwari et al. [59], bias dependence of spin torques in MgO-
based magnetic tunnel junction using a field-modulated spin torque ferromagnetic
resonance measurement technique is studied for three devices with tunneling magne-
toresistance (MR) of 60, 67, and 73%. The devices with lower MR ratio showed the
presence of multiple modes, which can be ascribed to asymmetric modes originating
Fig. 4 Measured resonance frequencies versus bias voltage in MgO-based MTJs from a Reprinted
with permission from Muduli et al.. [40] copyright (2011) by the American Physical society and
b Reprinted with permission from Heinonen et al. [55] Copyright (2010) by the American Physical
society. Both behaviors can be explained by a linear dependence of the perpendicular spin torque
on bias voltage
10 P. K. Muduli et al.
0.018 (b)
0.000
(a)
MR = 73%
0.012 MR = 67%
-0.004 MR = 73%
MR = 67% MR = 60%
-0.008 0.006
MR = 60%
-0.012
0.000
-0.016
-0.020 -0.006
0 100 200 300 400 500 0 100 200 300 400 500
Voltage (mV) Voltage (mV)
Fig. 5 Bias dependence of the (a) IP torkance, and (b) OOP torkance determined from the room
temperature FM-STFMR signals, for the three devices having different MR ratios. Reprinted from
Tiwari et al. [59], with the permission of AIP Publishing
some phase deviation. Here, the auto-oscillations in STNOs are because of the STT,
which provides sufficient energy for the local magnetization of the free layers and
acts opposite to the natural damping force. Slavin and Tiberkevich [14] provided
the general theoretical model of the auto-oscillations in STNO devices, which is a
generalized nonlinear auto-oscillator model:
dc
+ iω (p)c + + (p)c − − (p, I )c = f (t) (3)
dt
where c(t) defines the complex amplitude of the auto-oscillations characterized by the
resonant frequency, ω(p), power, p = |c|2 , and phase, = arg(c). The third term,
+ (p), defines the natural damping that in general describes energy dissipation. The
fourth term, − (p), defines the source of energy pumped to the system that can coun-
teract the natural damping and cause the system to generate auto-oscillations. As this
is opposite to the natural damping, − (p) is usually known as a negative damping
term. The nonlinearity in the auto-oscillation comes from the dependence of the
resonant frequency and of both damping terms on the auto-oscillation power [14,
62–69]. The term on the right hand side, f (t), describes the interaction of the STNO
with other sources or perturbations, such as thermal fluctuations. The resonant fre-
quency is power-dependent and under nonlinear dynamics can be described by:
ω(p) = ω0 + Np. Here, ω0 is the ferromagnetic resonance frequency and N is the
nonlinear frequency shift due to amplitude–phase coupling in the STNO, resulting in
a nonlinear contribution to the phase noise. The precessional motion in the STNOs,
especially the tuning of resonant frequency ω(p), depends on the applied current
and effective magnetic field. The applied current can directly influence the oscil-
lation power p and thus ω(p). The power dependence of ω(p) mainly comes from
the demagnetizing field, which is included in the Heff term of Eq. (1). However, the
main factor that can tune the ω(p) in a wide range is the externally applied magnetic
field Hext in the Heff term. An important feature of the auto-oscillatory regime is
the threshold nature of the auto-oscillation. According to Ref. [14], this threshold
current is theoretically given by
Ith = g /σ. (4)
(a) (b)
10
FFT [arb.]
5
0
4 6 8
Frequency [GHz]
30
(c)
FFT [arb.]
20
10
0
4 6 8
Frequency [GHz]
Fig. 6 a Map of STNO power as a function of STNO frequency and dc current. b and c show the
spectra measured by the spectrum analyzer at dc currents of 4 mA (below threshold) and 7 mA
(above threshold), respectively
factors depend on the material properties as well as the applied field. The free-
running auto-oscillation frequency ωp can be tuned by using both magnetic field and
dc current. Furthermore, the applied dc current can also control the STNO frequency
directly through the Oersted field in the Heff by altering the spatial variation [70, 71].
Figure 6 shows the example of spectra measured from an MTJ-based STNO.
Auto-oscillation is achieved at a current of 7 mA. At lower currents, low-power
thermally excited ferromagnetic resonance (TE-FMR) signals are seen due to the high
magnetoresistance (MR) of MTJ devices [53]. These signals are often not observed
for metallic-based devices. At low currents, the spectra can often contain multiple
modes [72], as shown in Fig. 6b for a current of 4 mA, which is below the auto-
oscillation threshold. Figure 6c shows a sharp peak due to auto-oscillations at a
current of 7 mA, which is above the threshold current of 6.4 mA.
MTJs are traditionally shaped into nanopillars in order to confine the current and force
it to go through the insulating barrier. Although nanopillar MTJs can generate much
higher microwave power, they suffer from larger linewidths compared to nanocontact
structures [73–76]. The reason for that is attributed to the smaller effective volume
of the nanopillar structure and also the in-homogeneous magnetization that arises
from the serrated edges of the nanopillars, which can lead to incoherent precession
of magnetization. To combine the low linewidths of nanocontact structures and high
output power of MTJs, a hybrid nanocontact structure has been proposed [77, 78].
A schematic of this type of hybrid device is shown in Fig. 7a, b. In these type of
Microwave Oscillators and Detectors Based … 13
The complete layer sequence of the MTJ stack used for the study is: Ta(3)/CuN(30)/
Ta(5)/PtMn(20)/CoFe30 (2)/Ru(0.85)/CoFe40 B20 (2)/CoFe30 (0.5)/MgO/CoFe30 (0.5)/
CoFe40 B20 (1.5)/Ta(3)/Ru(7), with thicknesses in nm. This stack has an in-plane easy
axis. Figure 7c shows the hysteresis loop of the above-mentioned stack with the mag-
netic field applied along the in-plane easy axis while the corresponding resistance of
an MTJ-STNO with a nominal diameter of dNC = 150 nm, is shown in Fig. 7d. The
MTJ-STNO device displays a 36% magnetoresistance and the field dependence of
the MTJ-STNO device and the unpatterned film stack shows a very good agreement.
This indicates that during the processing of the MTJ stack there was minimal damage
to the film and more importantly, the free layer (FL) has remained intact. In Fig. 7c
the magnetic state of some of the key points in the hysteresis loop is demonstrated.
Decreasing the magnetic field from the fully saturated state (1), causes the reference
layer (RL) to gradually become antiparallel to FL. This is manifested with a substan-
tial increase in the resistance (R) of the MTJ-STNO, shown in Fig. 7d. Decreasing
the field even more from state 2 → 3, the FL and RL become parallel again and as
a result, R decreases as well. Further decreasing the field from 3 → 4, the pinned
layer (PL) slowly switches to be parallel to the RL, working against a strong antifer-
romagnetic coupling (AFC). Going from 5 → 6 → 1, The FL switches at low field
and RL switches at high fields to align with the applied field.
Fig. 7 Schematic of the layer sequence and the current distribution in (a) a normal nanocontact
and (b) a hybrid nanocontact structure in which the cap layer is thinned down. c Hystersis loop of
the unpatterned MTJ stack with the field being applied along the in-plane easy axis. d Resistance
of a MTJ-STNO device with the field being applied along the in-plane easy axis yielding a mag-
netoresistance of 36%. Inset in (d) in the uniform FMR mode frequency (blue dots and the Kittel
fit (red line) to extract an effective magnetization of 1.41 T. Reprinted from Houshang et al. [79]
Copyright (2018) by Nature Communications
where, Hint and θint are the internal magnetic field and out-of-plane angle, respec-
tively. The internal angle is found to be θint
crit
= 60◦ and it is in a good agreement with
the theoretical predictions θint
crit
= 55◦ [81] Above the critical field, a weaker mode
can be seen having a frequency only slightly higher than fFMR which is consistent
with the ordinary Slonczewski propagating spin wave mode. Increasing the drive
current to Idc = −7 mA, a strong mode with a frequency well above fFMR starts to
appear. Further increasing the amount of current, a sharp jump to a mode with even
higher frequency is observed at about 1.6 T (Fig. 8d). At Idc = -9 mA and -10 mA,
the new mode dominates the high field region. These new high frequency modes can
be perfectly analyzed by the higher-order propagating SW modes put forward by
Slonczewski [82]. Slonczewski predicted that propagating SWs can assume a dis-
crete set of wave vectors rNC k 1.2, 4.7, 7.7.... Using the free layer (CoFe/CoFeB)
exchange stiffness Aex = 23 × 10−12 J/m, and allowing for a reasonable lateral cur-
rent spread, one cat fit the high frequency modes accurately, by taking higher order
Microwave Oscillators and Detectors Based … 15
Fig. 8 Power spectral density of auto-oscillations as a function of applied magnetic field strength for
a Idc = −5 mA, b Idc = −6 mA, c Idc = −7 mA, d Idc = −8 mA, e Idc = −9 mA, and f Idc = −10
mA. The FMR frequency (fFMR ) and the SW bullet frequency (fSWB ), are shown by red and pinck
2nd ), and third-order (f 3rd ) Slonczewski modes are shown by
dashed lines, and the second- (fPSW PSW
brown and green dashed lines, respectively. Reprinted from Houshang et al. [79] Copyright (2018)
by Nature Communications
wave vectors into account. The experimental results together with the calculated SW
mode frequencies are shown in Fig. 8c–f. Furthermore, the need for higher currents
to excite these higher order modes are also in-line with Slonczewsiki’s expectations
[82]. The details of calculating the frequency of higher order modes, dependence of
Ms on Idc , and the role of azimuthal modes in addition to the radial ones considered
by Slonczewski, can be found in Ref. [79].
Mutual synchronization of STNOs has been extensively studied in the literature [71,
83–85]. Here, the mutual synchronization of all three Slonczewski modes are exper-
imentally shown (Fig. 9), further demonstrating their propagating nature. Field and
current dependence of MTJ-STNOs with two NCs having 150 nm nominal diameter
separated 300 nm are shown in Fig. 9a–c. The behavior of the device as a function
of field at a constant drive current, is shown in Fig. 9a. At fields lower than 1.22
T, two distinct modes can be observed at high frequencies with a substantial noise
at low frequencies, indicative of a substantial interaction between the two modes.
By increasing the field, these two modes merge into one and at the same time, the
low-frequency noise disappears which is consistent with mutual synchronization. A
16 P. K. Muduli et al.
Fig. 9 Mutual synchronization on the a first-, b second-, and c third-order Slonczewski modes for
a MTJ-STNO with two NCs having a nominal diameter of dNC = 150 nm and a center to center
spacing of 300 nm. Reprinted from Houshang et al. [79] Copyright (2018) by Nature Communica-
tions
set of new devices with a thicker bottom electrode to sustain more current, were
used to study the synchronization behaviour as a function of drive current. As can
be seen in Fig. 9b, at 1.18 T, two fist order Slonczewski modes can be detected
at currents Idc < −13 mA. Increasing the amount of drive current, first one of the
NCs jump to second-order at about Idc = −13 mA and then the second NC at about
Idc = −17 mA after which the two modes merge and synchronize at about −18 mA.
Increasing the applied field to 1.45 T, the second order modes do not synchronize
at all while the third-order modes are synchronized. Therefore, it is possible to tune
the applied field and drive current so that synchronization is achieved for each of the
three Slonczewski modes.
Being able to generate high-order Slonczewski modes means that one can generate
modes with much shorter wavelengths, in this 120 nm and 74 nm for the second-
and third-order modes. Having access to larger wavevectors also indicates that the
group velocity of these waves are also higher since the group velocity increases
with wavevector vgr 4γ Aex k/Ms . This means not only SWs can travel much faster
but much further before they get damped out which has significant implications for
practical applications of magnonic devices.
The linewidth, f of the single mode in STNO devices can be described by the
single-mode theory developed by Kim et al. [14, 67, 68].
According to this theory, f of a nonlinear oscillator is given by:
f = g (1 − Idc
Ith
), for I << Ith (8)
= fL (1 + ν ), for I >> Ith
2
(9)
where Idc is the dc bias current, and the nonlinear linewidth amplification is (1 +
2
ν 2 ) = 1 + p0 Np , where N = ddpω is the nonlinear frequency shift, and p is the
power restoration rate (p−1 is the correlation time of the power fluctuations); fL =
g E(p
kT
0)
is the intrinsic thermal linewidth—i.e., the linewidth of a linear (ν = 0)
oscillator. Here, E(p0 ) is the total energy of the oscillator. Above threshold (Idc Ith ),
the nonlinear amplification of the linewidth is controlled by the ratio of the nonlinear
frequency shift N to the power restoration rate p .
George et al. [69] successfully applied the single-mode theory to MTJ-based
STNOs. They showed that the nonlinear coefficient ν can be calculated from the
equation:
2
Idc df
ANL = 1 + . (10)
g dIdc
They derived p from the auto-correlation function of power fluctuations using the
following expression [87]:
Here, δp is the power fluctuations around the mean value p0 and A(p0 , p ) is the
amplitude. The other way of measuring p is given by Refs. [88, 89] from the
18 P. K. Muduli et al.
Fig. 10 Linewidth as a function of Idc for Hext = 110 Oe and T = 300 K. The right axis shows
the experimentally determined nonlinear amplification factor ANL with Idc as fitted by Eq. (10).
Reprinted from Georges et al. [69] Copyright (2009) by the American Physical Society
noise spectra. In particular, Ref. [88] estimates the nonlinear amplitude relaxation
frequency, fp = p /π , from the crossover of the linear and nonlinear contributions
in the phase noise plot.
The linewidth of the single mode in STNO devices, as discussed above, can be well
described by white noise generated primarily due to thermal noise. White noise is
a random noise whose intensity is independent of frequency. The thermal fluctua-
tions add a Gaussian noise to the STNO spectra, leading to a Lorentzian line shape.
This Gaussian white frequency noise exists in all electronic devices. The effect of
thermal fluctuations on the emission linewidth has been studied in MTJ-STNOs in
different experimental studies [69, 90, 91]. Reference [69] showed that intrinsic
noise is not dominated by thermal fluctuations but rather by chaotic dynamics of
the magnetic system induced by the spin-transfer torque. Sierra et al. [91] showed
a linear dependency of linewidth in nanopillar MTJ-STNOs in contrast to the result
shown by Ref. [69]. Sierra et al. showed that the emission linewidth ( f ) strongly
depends on nonlinear parameters like ν and p . For the nonlinear oscillator, where
ν > 0, emission linewidth could be dependent on the temperature in different ways.
For the case of 2π f << p , emission linewidth shows a linear dependency on the
temperature, whereas for the case of 2π f > p , the emission linewidth increases
nonlinearly with the temperature in good agreement with theoretical predictions
[14, 66].
Microwave Oscillators and Detectors Based … 19
In the previous section, the analytic theory of linewidth generation was based on the
single auto-oscillatory mode. However, various studies have shown the presence of
multiple modes in STNO devices [43, 92, 93]. Figure 11 shows so-called Wigner
plots of instantaneous frequency of MTJ-based STNO for a duration of 20 ns. Clear
mode-hopping can be seen at ϕ = 220◦ , where ϕ represents the angle between the free
and reference layer. The right-hand side column shows the autocorrelation function
of the power fluctuation. The decay of the autocorrelation function (τ ) is faster in
the case of ϕ = 220◦ because of mode hopping events and decoherence. For the case
of ϕ = 196◦ , a single mode is observed and the decay of the autocorrelation function
(τ ) is slower. Detailed investigation into the bias current and field angle shows that
mode-hopping is minimized near the current threshold for the antiparallel alignment
of the free layer with the reference layer magnetization. Away from the antiparallel
alignment, mode hopping limits oscillator coherence. Furthermore, evidence of mode
hopping [40, 72, 94], mode transitions [16, 95], and coexistence [70] has been
reported in STNOs.
There have been some recent works to extend the single-mode theory to multiple
modes [72, 96–99], which is necessary in order to explain experimental observations
of multi-mode system as well as of the generation linewidth of such systems. These
works draw on an analogy between equations describing STNO multimode genera-
tion with equations similar to those describing multimode ring lasers [100, 101] in
laser technology. The theory presented in Ref. [99] is a generalization of the single-
mode theory by Slavin and Tiberkevich [14] that includes contributions to nonlinear
frequency shift as well as to nonlinear damping and pumping from mode-interactions
7 1.0
6 m2 (a) (b)
f [GHz]
5 0.5
4
3 0.0
0 10 20
0 2 4 6 8 10 12 14 16 18 20
6 1.0
(c) (d)
5
f [GHz]
4
m1 0.5
3 m2
2 0.0
0 10 20
0 2 4 6 8 10 12 14 16 18 20
Time [ns] Time [ns]
Fig. 11 Wigner distribution (first column) and normalized autocorrelation envelope of the dominant
mode (second column) at ϕ= (a), (b) 196◦ , and (c), (d) 220◦ for Idc = 8 mA and Hext = 450 Oe. Red
lines are exponential fits to the experimental autocorrelation envelope from the Eq. (12). Dashed
lines are the experimental data. Reprinted from Muduli et al. [72] Copyright (2012) by the American
Physical Society
20 P. K. Muduli et al.
dA1 (t)
= −i η1,1 |A1 |2 + η1,2 |A2 |2 A1 − G,1 1 + P1,1 |A1 |2 + P1,2 |A2 |2 A1
dt
+σ0 I cos β 1 − Q1,1 |A1 |2 − Q1,2 |A2 |2 + R1,2 (T )A2
dA2 (t)
= −i η2,1 |A1 |2 + η2,2 |A2 |2 A2 − G,2 1 + P2,1 |A1 |2 + P2,2 |A2 |2 A2
dt
+σ0 I cos β 1 − Q2,1 |A1 |2 − Q2,2 |A2 |2 + R2,1 (T )A2 . (13)
Here, σ0 I is the effective field that arises because of STT, β is the angle between
the reference layer magnetization and an in-plane external magnetic field, and
G,i = αωi , i = 1, 2, with ωi the linearized undamped frequency of eigenmode i.
The coefficients ηi,i are the usual non-linear frequency shift due to the power of
mode i, but now there are also off-diagonal non-linear frequency shifts ηi,j , i = j, of
mode i due to the power of mode j. Similarly, the non-linear damping and pumping
now have off-diagonal contributions Qi,j and Pi,j , i = j, to the dynamics of mode i
because of the power in mode j, in addition to the diagonal contributions Qi,i and Pi,i .
Note that while Q1,2 = Q2,1 it is not the case in general that P1,2 = P1,2 . Finally, the
complex coefficients Ri,j (T ), with T the temperature, couple the amplitude of mode
j to the time-evolution of mode i. These are the couplings that arise from interactions
with the thermal bath of magnons. If the coefficients Ri,j are zero, the system may
exhibit single motion according to modes 1 or 2, or may exhibit mode coexistence.
Only if Ri,j are non-zero [100, 101], and in the presence of a stochastic force such
as thermal agitation, will the system exhibit mode-hopping.
Keller et al. [75] showed an additional mechanism of linewidth broadening that arises
from the so-called 1/f frequency noise or color noise. They obtained a frequency noise
spectrum spanning more than five decades of Fourier frequencies and showed that
the frequency noise spectrum is white at large Fourier frequencies and varies as 1/f
Microwave Oscillators and Detectors Based … 21
at small Fourier frequencies. They showed that 1/f frequency noise can causes both
broadening and a change in shape of the oscillator’s spectral line as the measurement
time increases. The 1/f frequency noise was observed in other types of STNOs [75,
102, 103] as well as in MTJ-based STNOs [88, 104].
In general, the STNO waveform is a nonideal sinusoidal waveform where instan-
taneous frequency/phase and amplitude varies as a function of time. Keller et al. [75,
102] measured the phase noise using the zero crossover method. The phase noise is
calculated from the power spectral density of the phase deviations, which is calcu-
lated using the equation, φtot = 2π f0 t + φ(t) = nπ . Here, φtot is the total phase, f0
is the nominal frequency, and φ(t) is the phase deviation. Following this method, the
frequency noise can simply be calculated using the Fourier relation Sν2 = f 2 Sφ2 [88,
102]. Here, Sν is the frequency noise (power spectral density of instantaneous fre-
quency deviation) and Sφ is the phase noise (power spectral density of instantaneous
phase deviation). Figure 12 shows the frequency noise plots as a function of field
angle (ϕ) between the free and fixed layers and the dc bias current (Idc ) in an MTJ-
based STNO. Note that the free and fixed layers are aligned antiparallel—that is,
ϕ = 180◦ . The threshold current of the device is 6 mA for the chosen magnetic field of
400 Oe. A strong single mode was observed for the case of Idc = 7 mA and ϕ = 196◦ ,
whereas for the other case, Idc = 7 mA and ϕ = 220◦ , as many as 5 clear modes were
observed [72]. To quantify the 1/f frequency noise, a parameter known as transition
frequency (ft ) [104] is defined as the point on the frequency noise plot at which 1/f
frequency noise transforms into white frequency noise. It can be seen from the above
threshold condition (Fig. 12a) that under mode-hopping conditions of ϕ = 220◦ , ft
increases to 440 kHz. In the sub-threshold region (i.e., with Idc = 3 mA), where
thermal noise dominates, multiple modes have been observed and hence ft is higher.
In this case also, ft increases in the case of ϕ = 220◦ , where again significant mode
hopping is observed (Fig. 12b). A significant increase in the linewidth was observed
for the case where 1/f frequency noise is high. Furthermore, it was shown that the
1/f frequency noise is significantly high due to mode-hopping. The line-shape fit-
ting shows a better fit with a Voigt line-shape compared to a Lorentzian line-shape.
This verifies both previous observations [75, 98] of change in the lineshape for 1/f
frequency noise. But, most importantly, it is established that mode-hopping can lead
to 1/f frequency noise.
Fig. 12 Comparison of frequency noise at ϕ = 196◦ and ϕ = 220◦ for a Idc = 7 mA and b Idc =
3 mA. The dashed lines show the transition frequency where 1/f frequency noise begins. The data
is similar to Ref. [104]
22 P. K. Muduli et al.
where Ai (t) is the slow amplitude of mode i. By recognizing that individual mode-
hopping events occur on time-scales very much smaller than the time-scale of evo-
lution of Ai (t), mode-hopping events can then be added as a Poisson process with
a rate λ. After some lengthy calculations one can then show that the autocorrela-
tion function K(τ ), where τ = t − t , in general contains three kinds of behavior
in τ . The first two are factors that are exponentials in −|τ | and −τ 2 , respectively,
and arise from the coupled mode equations. The third factor is an exponential in
−λ|τ |, and it arises from the mode-hopping. In general, the line shape is then given
by a convolution of exponentials in |τ | with a Gaussian in τ , which is a Voigt line
shape. This was also confirmed by Iacocca et al. [98] by directly integrating the
coupled mode-equations in the presence of a thermal stochastic force, calculating
the auto-correlation function, and Fourier transforming it.
Close to a mode transition, the rate mode hopping events are observed to increase
dramatically, and the line width is then dominated by mode-hopping events. Measure-
ments of the line width can then provide a direct measurement of the mode-hopping
rate λ. Under the assumption that mode-hopping events obey an Arrhenius distribu-
tion, the energy barrier E that must be overcome by thermal agitation in order to
produce a mode-hopping event can then be obtained from
fa
E(Idc ) = kB T log . (15)
λ
Microwave Oscillators and Detectors Based … 23
Here, we have indicated that the energy barrier δE(Idc ) depends sensitively on the
dc current Idc ; the frequency fa is an attempt frequency. kB is the Boltzmann constant
and T is the temperature. Using a simple assumption that the attempted frequency is
twice the relaxation frequency and be extracting E(Idc ) from a single measurement,
Iacocca et al. [98] obtained good quantitative and qualitative agreement between
theory and experiment [96] for the linewidth as a function of temperature.
7 Parametric Synchronization
Fig. 13 Parametric synchronization and excitation of the MTJ-based STNO. a Spectrum of the
STNO frequency as a function of injected RF signal with a frequency fe for an injected RF current
of Ie = 2.6 mA and Idc = 7 mA showing parametric synchronization. b Variation of linewidth as a
function of Ie . c Excitation bandwidth as a function of the external signal strength Ie at Idc = 4 mA
(parametric excitation) and Idc = 7 mA (parametric synchronization). The corresponding solid lines
for 4 mA and 7 mA are fits to Eqs. (16) and (17), respectively. Inset: Excitation threshold Ie,th as
a function of dc bias current. Reprinted from Dürrenfeld et al. [117], with the permission of AIP
Publishing
Here, V is the coupling between the external source and the STNO and I is the linear
damping parameter in the subthreshold bias current: I = o (I − Ith ). Figure 13
shows the excitation bandwidth calculated for the case of Idc = 4 mA. The threshold
RF current required to see any excitation bandwidth is Ie = 0.99 mA.
For the case of parametric synchronization at Idc = 7 mA, the excitation bandwidth
is higher than in the case of Idc = 4 mA. The excitation bandwidth for the parametric
synchronization is given by [113, 117]:
ωe = 4 1 + ν 2 V Ie (17)
The thermal stability of any electronic device is a crucial issue. Although the syn-
thetic antiferromagnetic structure gives good thermal stability to STNO devices, the
magnetization dynamics of the free layer are in general affected by thermal agita-
tion, which can also affect parametric synchronization. The time-averaged spectrum
analyzer data cannot reveal the real-time dynamics of the signal generated by the
free layer precession. For this purpose, time-domain study is required. A study of the
effect of thermal noise is required to understand the coupling of STNOs in arrays.
George et al. [107] was the first to discuss and demonstrate the effects of thermal
Gaussian noise in injection-locked spin-valve-based STNO devices. According to
this work, thermal noise can weaken injection locking by affecting the range of lock-
ing bandwidth. On the other hand, in an another study based on micromagnetic simu-
lation [119], injection-locked spin-valve-based STNOs were found to be quite stable
against thermal Gaussian noise. Recently, Lebrun et al. [120] described an experi-
mental time-domain study of fractional synchronization under different conditions:
fe ∼ f0 /2, fe ∼ f0 , and fe ∼ 2f0 , revealing that the power required for phase noise
squeezing (where 1/f 2 phase noise is completely suppressed) is different for differ-
ent fractional synchronization conditions. In MTJ-STNO, a study of parametric syn-
chronization [117] revealed that the frequency domain STNO spectra show a random
unlocking at low microwave power, which can be attributed to thermal fluctuation.
A recent time-domain study of parametric synchronization [121] by the authors
of this chapter revealed random unlocking at low RF power due to thermally driven
frequency stability, while the frequency-domain data show the expected synchroniza-
tion of any STNO device. The instantaneous frequency calculated from the Hilbert
transform method reveals that the instantaneous frequency is not always inside the
locking bandwidth (32 MHz, shown by blue dotted line), as shown in Fig. 14a at
Prf = −11 dBm. At the high RF power value of −5 dBm, the instantaneous fre-
quency is inside the locking bandwidth (107 MHz, shown by red dotted line) for the
total time of 5 μsec, as shown in Fig. 14a. However, even at −5 dBm, frequency
fluctuations are present, resulting in a phase noise that exceeds the injected signal.
We only observe phase slips of π , which, according to Ref. [120], is a signature of
phase locking with an injected signal at frf = 2f0 . These π phase slips still leads to
1/f 2 phase noise. To understand the random unlocking at low RF power, macrospin
simulations were performed by adding the thermal field to Heff by following Brown’s
approximation [122, 123]. The macrospin simulations reproduce the experimental
results and reveal that the random unlocking during synchronization is driven by
thermal fluctuations, as shown in Fig. 14b. Macrospin simulation further suggests
that increasing RF power can lead to a complete suppression of 1/f 2 phase noise,
where not even π phase slips exists and results in a constant phase (i.e., STNO phase
follows an injected signal phase: a condition of perfect phase synchronization) with
a complete suppression of phase noise. Macrospin simulations suggest that a lower
temperature and a higher positive field-like torque both reduce the threshold RF
power required for phase noise squeezing under parametric synchronization.
26 P. K. Muduli et al.
sideband amplitudes around the carrier spectrum and (2) shifts in the frequency
of the carrier spectrum with the increase in the modulation current. Pogoryelov et
al. [25] showed the validity of the NFAM model on a pair of synchronized nanocontact
STNOs.
With regard to the modulation of MTJ-based STNOs, Martin et al. [124] first
reported modulation of MTJ-vortex-based STNO devices. They also applied the
NFM model to their experimental data and showed that the characteristic time of the
vortex dynamics must be taken into account to explain the modulation data. This is
because the modulation period approaches the transient time.
Recently, Sharma et al. [131] have demonstrated the phenomenon of single sideband
(SSB) modulation in MTJ-based STNOs, as shown in Fig. 15. Figure 15a, b shows the
experimental observation of the SSB over a broad range of modulation frequencies,
fm = 100–500 MHz at modulation current, Im = 1 mA, and over a broad range of
modulation currents of Im = 0–1.5 mA at a modulation frequency of fm = 500 MHz,
respectively. The figure shows only the presence of a lower sideband; the upper side-
band is completely suppressed. This phenomenon of a carrier with one sideband is
known as single sideband (SSB) modulation and is a result of the strong nonlinear
variation of frequency and amplitude with bias current in MTJ-STNOs. The perfor-
mance of the STNOs as an SSB generator can be tuned with operating parameters
such as in-plane field angle [132] as well as with the field-like torque term present in
MTJ-based devices [131]. The in-plane field angle changes the frequency tunability
with bias current and thus the SSB onset frequency and carrier power for the SSB
Fig. 15 Single sideband modulation of MTJ-based STNOs. a Map of power versus frequency and
modulation frequency at Im = 1.5 mA and Idc = 4.6 mA and b map of power versus frequency and
modulation current at fm = 500 MHz at Idc = 4.6 mA
28 P. K. Muduli et al.
transmission [132]. The field-like term also affects the frequency tunability with the
bias current [40, 52, 55]. The observation of lower single side band (LSSB) in the
experimental results of Ref. [131] indicates the presence of smaller field-like torque,
which is consistent with other works on similar devices [40, 133].
Transmission through SSB generation is particularly advantageous for wireless
communication since: (1) less transmission power is required as only one sideband,
carrying the same information as the other one, will be transmitted; (2) there is less
utilization of the available spectrum in comparison with double sideband (DSB)
transmission; (3) there is less selective fading or interference with other signals. Fur-
thermore, SSB generation through MTJ-based STNO devices has an edge over the
existing technology for SSB generation, due to its compact size and fast modula-
tion rate. The traditional method of generating SSB using, for example, a Hartley
modulator [134] or a Weaver modulator [135], requires a number of components for
SSB generation that makes the overall set-up a little bulky. However, STNO uses a
single device for the carrier and sideband generation due to its nonlinearity and is
suitable for chip technology, due to its compatibility with commercialized CMOS
technology.
Fig. 16 Modulation of a locked STNO. a Experimental and b simulated spectra of the synchronized
STNO versus fmod at a modulation current of Imod = 0.99 mA. c The relation between funlock and
Imod /IDC shows an increase with Imod for both experiments and numerical macrospin simulations.
The solid lines are fits to the data according to Eq. (18). Reprinted from Dürrenfeld et al. [136],
with the permission of AIP Publishing
and the modulation amplitude. The maximum phase difference can be calculated
by [136, 137]:
Imod 1
fmax = 2νp − (p0 ) (18)
IDC 2 4 2 + f 2
p mod
At the unlocking condition—that is, at fmod = funlock , the experimental data for funlock
versus modulation strength in Fig. 16c can be fitted with the above Eq. (18) by
assuming fmax to be equal to the excitation bandwidth. Thus the unlocking observed
in Ref. [136] can be identified as the nonresonant mechanism in agreement with a
recent numerical study [138].
Microwave or radio frequency (RF) detectors can be realized when the dc input is
replaced by a microwave current in an MTJ-based STNO. The microwave detection
in an MTJ nanopillar is a result of the giant TMR and magnetization dynamics
induced by the spin-transfer torque. In the case of a RF current Irf = I sin(2π fe t)
with frequency fe close to the resonance frequency of the STNO, a large dc voltage is
produced by the microwave current mixing with the signal generated by the dynamic
response of the STNO in a phenomenon called the spin-torque diode effect [31]. The
30 P. K. Muduli et al.
Fig. 17 Experimental demonstration of the spin-torque diode effect by Tulapurkar et al. [31] a
Schematic diagram of the experimental set-up and cross-sectional view of the magnetic tunnel
junction (MTJ) device. The thicknesses of various layers of the device in nanometers are given in
brackets. A microwave current and a direct current are applied simultaneously through a bias-tee to
an MTJ, which excites the free-layer magnetization and causes resistance oscillations at the driving
frequency of the microwave current. b Direct-current voltage generated by the device in response
to the alternating current. The dc voltage is plotted as a function of the frequency. Adapted by
permission from Macmillan Publishers Ltd: (Nature) Tulapurkar et al. [31], copyright (2005)
experimental set-up of the spin-torque diode effect used by Tulapurkar et. al. [31] is
shown in Fig. 17a. The rectified voltage generated by the device in response to the
alternating current is shown in Fig. 17b. The microwave detector sensitivity of the
tunnel junction, which is defined as the ratio of the detected voltage to the input RF
power, is important for applications. In the very first work by Tulapurkar et. al. [31]
a sensitivity of 1.4 mV/mW was obtained, which is too small for applications. Later,
Wang et al. [37] reported higher sensitivity of 54 mV/mW, and predicted even higher
values of 10,000 mV/mW.
A report by Gui et al. [139] shows that even in the absence of any external applied
magnetic field, an MTJ can produce a significant direct voltage under microwave
radiation at frequencies far from the ferromagnetic resonance condition. However,
we will not focus on this type of detector; interested reader may refer to the review
article by Hemour et al. [140].
From an experimental point of view, two modulation techniques—namely, RF cur-
rent modulation [31–33] and field modulation [133, 141]—are used for the detection
of rectified voltage. In the RF current modulation scheme, a modulating microwave
current is supplied to the STNO and the rectified voltage is obtained across a lock-in
amplifier. The detected resonant spectra may, however, be dominated by frequency-
dependent nonmagnetic background oscillations, as shown in Fig. 18b. These oscil-
lations are due to the frequency-dependent variation of Irf in the transmission line,
which arise from impedance mismatch. To suppress these oscillations, the field mod-
ulation technique is useful [133]. In this technique, the static magnetic field is mod-
ulated with a small ac field (∼5 to 10 Oe) produced by a pair of Helmholtz coils.
These coils are supplied with an ac current at a reference frequency from a lock-in
Microwave Oscillators and Detectors Based … 31
Fig. 18 a Schematic of the setup used for the field modulation spin-torque ferromagnetic resonance
technique b Comparison of current and field-modulated spectra measured via the spin-torque diode
effect using spin-torque ferromagnetic resonance at Hext = 400 Oe
amplifier, which also measures the spin-torque diode voltage. An RF current Irf and
a direct current Idc are applied simultaneously through a bias-tee to the STNO, which
excites the free layer magnetization and causes resistance oscillations. The schematic
for field modulation technique is shown in Fig. 18a. The oscillating frequencies and
processional modes in both modulation schemes (current and field) are close, but
vary in peak to peak voltages Vpp with the applied external magnetic field. The field
modulation method offers better signal-to-noise ratio as well as a higher sensitivity;
see Fig. 18b.
In the following, we will discuss approaches to improving the sensitivity of the
MTJ based microwave detector.
nal at ∼4.5 GHz for a current of 7 mA. The threshold current Ith for auto-oscillation
is around 6.4 mA [40, 72, 96]. Hence, the sensitivity at 2f0 becomes higher than at f0
only above the threshold of the auto-oscillations. Figure 19b, c shows the macrospin
simulated behavior of the STNO below and above the threshold, respectively. Para-
metric synchronization happens above the threshold, as shown in Fig. 19c, and this
enhances the microwave sensitivity. The advantage of this approach is that the fre-
quency of detection is twice that of the eigen frequency of the STNO, and hence the
technique also offers higher operation frequencies.
Miwa et al. [35] showed a much greater microwave detection sensitivity of 12,000
mV/mW at room temperature, which exceeds that of the commercial semiconduc-
tor diode detectors (3800 mV/mW). The results of Miwa et al. [35] are shown in
Fig. 20a. They showed that sensitivity increases significantly when dc bias currents
are applied to an MTJ. This high sensitivity has been explained on the basis of
nonlinear FMR [142]. In the nonlinear FMR process, the center of the precession
orbit is energy-dependent because of the higher-order nonlinear terms. This causes
a change in the relative angle between the free-layer magnetization and the pinned-
layer magnetization and, consequently, a change in the dc resistance, leading to
higher sensitivity. However, the frequency of operation was limited to 1–2 GHz.
Microwave Oscillators and Detectors Based … 33
Fig. 20 a RF detection voltage (Vdetect ) as a function of the RF input frequency under various dc bias
currents (Idc ). The radio frequency detection sensitivity of 12,000 mV/mW is achievable at room
temperature. Adapted by permission from Macmillan Publishers Ltd: (Nature Materials) Miwa et
al. [35], copyright (2013). b, c shows the rectified voltage observed for the core expulsion and
spin-torque diode measurements taken at 6 and 0 mA, respectively, for Irf = 0.2 mA. The maximum
effective sensitivity observed is as large as 80,000 mV/mW [143]. Adapted by permission from
Macmillan Publishers Ltd: (Nature Nanotechnology) Jekins et al. [144], copyright (2016)
MTJs with large perpendicular magnetic anisotropy (PMA) often show a change in
the anisotropy value when a bias (or electric field) is applied across the device [146,
147]. This electric field induces certain interfacial magnetoelectric effects that affect
34 P. K. Muduli et al.
the availability of electronic states for different spin orientations [148]. The resulting
imbalance leads to a change in out-of-plane anisotropy. This effect, called voltage-
controlled magnetic anisotropy (VCMA), has been shown to have uses in several
applications, such as magnetization switching [12, 149–152] and phase noise reduc-
tion [153]. VCMA is also shown to excite voltage induced FMR dynamics at radio
frequencies (GHz) [34, 36, 154–156].
In 2012, Nozaki et al. [154] reported the possibility to excite ferromagnetic res-
onance by using VCMA in FeCo monolayers. Zhu et al. [34] later reported that the
inclusion of VCMA in exciting FMR dynamics leads to an extra antisymmetric term
in the STFMR spectra, which increases the RF sensitivity. Figure 21a shows the
calculated STFMR spectra of an MTJ including only VCMA for two different field
directions. The calculation is done using macrospin simulations by neglecting the
spin torque (both in-plane and field-like torque) in the LLGS equation, but including
VCMA. The effects of STT on the spectra are neglected here, assuming a very high
resistance area (RA) product, due to which only a small quantity of current flows
through the device. According to Zhu et al. [34], a sensitivity of 440 mV/mW was
achieved with a 40 Oe external field using VCMA, which is 39% more than the value
obtained without using VCMA at zero field (Fig. 21b).
A voltage-induced FMR study was conducted by Shiota et al. [157] to analyze
the effect of bias and input power on the RF sensitivity. This study highlighted the
advantages of using the voltage-induced FMR technique, as opposed to the standard
STFMR technique which is based on STT. The study reports an improvement in
the peak-to-peak voltage with applied bias in both polarities (Fig. 22a). Applying
higher RF power also increases the magnitude of the detected peak-to-peak voltage
(Fig. 22b). The increase in peak-to-peak homodyne detected voltage was found to
be linear, even at very high power values (300 μW). This result is in stark contrast
Fig. 21 a Calculated STFMR spectra generated by resistance oscillations due to the effect of
VCMA. The opposite signs of the antisymmetric component at the 0◦ (Hx > 0) and 180◦ (Hx < 0)
field directions (w.r.t. the fixed layer polarization) are a signature of VCMA. b Experimental result
showing an increase in sensitivity of ∼ 39% with the inclusion of VCMA effect. Reprinted from
Zhu et al. [34] Copyright (2012) by the American Physical Society
Microwave Oscillators and Detectors Based … 35
Fig. 22 a Bias dependence of peak-to-peak voltage in FMR spectra 2 GHz and 5 GHz. An increase
in the detected homodyne voltage can be seen at both polarities of the applied bias. b Shows a
linear increase in the peak-to-peak homodyne voltage with increasing RF power under different
bias conditions. A linear variation is maintained even for very high power values, which is not
possible using spin-torque effects where the free layer is destabilized at high currents. Reprinted
from Shiota et al. [157], with the permission of AIP Publishing
to those of studies based on the STFMR technique, where the linear increase is seen
only at low powers since, at higher input powers, the current destabilizes the free
layer. Moreover, more than 30 mV peak-to-peak output voltage was obtained using
this method—ten times the value reported by Miwa et al. [35] using the STFMR
technique. The highest input current that could be injected was also 3 times higher.
However, it should be noted that the maximum sensitivity achieved was 300 mV/mW,
which is much less than the value obtained by Miwa et al. (12000 mV/mW) [35].
However, a recent analytical study by Gonzalez-Fuentes et al. [158] showed that
further optimization of sensitivity is possible by tuning the external field angle which
changes the contribution of STT (symmetric) and VCMA (symmetric as well as anti-
symmetric) terms in the STFMR spectrum.
Frankowski et al. [159], in a study of VCMA-based MTJs, showed that sensitivity
on the order of tens of thousands of mV/mW is attainable. Using micromagnetic
simulations, the dependence of the sensitivity on the uniaxial anisotropy constant
was studied. They showed that, near the region where the transition from in-plane
configuration to out-of-plane configuration takes place, the sensitivity changes by
several orders of magnitude (Fig. 23a). The reason for this behavior was attributed to
the decrease in effective anisotropy near the transition region, which leads to large-
angle magnetic precession. Resistance oscillations, which depend on the relative
angle between the free and fixed layer, also become very large in this case. Such
large resistance oscillations lead to an increase in RF sensitivity. Figure 23b shows
the variation in the quality factor with the anisotropy energy. The quality factor
is defined as the ratio of the eigenmode frequency (f ) and the linewidth (f0 ). A
decrease in quality factor was seen near the transition region. This was explained
by the increase in effective damping and the high exchange energy in the transition
36 P. K. Muduli et al.
Fig. 23 a and b show the dependence of sensitivity and quality factor, respectively, on the uniaxial
anisotropy of the free layer. Sensitivity varies by several orders of magnitude near the region
where the in-plane to out-of-plane transition takes place (dotted line). This happens due to the
large precession angle of the magnetic spins. The quality factor deteriorates in this region owing
to an increase in effective damping and exchange energy. Reprinted from Frankowski et al. [159],
with permission from Elsevier. c shows the enhancement in sensitivity using injection locking. The
voltage signal generated as a function of the microwave frequency is shown under various dc bias
currents (Idc ). Adapted by permission from Macmillan Publishers Ltd: (Nature Communication)
Fang et al. [36], copyright (2016)
Fig. 24 a Simulated STFMR spectra accounting for the VCMA effect for an in-plane external
field, H = −1000 Oe, Idc = 0.2 mA and Prf = −42 dBm. The obtained sensitivity is of the order
of 105 mV/mW. The inset shows the clamshell trajectory at the two extreme points in the STFMR
spectra. b shows the excited frequency of the MTJ as a function of the driving RF signal clearly
showing parametric synchronization in the shaded region with a locking bandwidth, fbw . Reprinted
from Sisodia et al. [161], with permission from AIP Publishing
The values of sensitivity and detection frequency obtained by the above discussed
methods are summarized in Table 1 These results suggests that VCMA to-gather with
parametric synchronization offer best combination of high RF sensitivity as well as
high detection frequency.
38 P. K. Muduli et al.
In 1999, Hirsch revisited [163] a different phenomenon, the so-called spin Hall effect
(SHE), first described by D’yakonov and Perel’ in 1971 [164, 165]. The SHE can
produce a pure spin current in a direction perpendicular to a charge current [166,
167], which can, in turn, exert substantial STT on an adjacent magnetic layer. It is
thus possible to use the SHE in a nonmagnetic metal to achieve, in principle, all the
STT-related functions-such as magnetic switching [168, 169] and driven magneti-
zation precession [170, 171] that previously required a separate magnetic layer to
spin-polarize the charge current. With the recent emergence of the spin Hall effect, a
new type of spintronic oscillator, the SHNO, has been developed [171]. This provides
a new route for the development of microwave and magnonic devices [172]. SHNOs
exhibit several advantages over STNOs, including easier nano-fabrication, lower
threshold DC current, direct optical access to the magnetodynamically active area,
smaller radiation losses, and suppressed nonlinear damping process [172]. However,
the linewidth of SHNOs is of the same order as that of STNOs, and their output power
is currently lower than that of STNOs. Despite the issues with SHNOs, their advan-
tages offer an opportunity to implement novel nanoscale microwave sources and emit-
ters for wireless communications, nonlinear frequency modulation, and magnonics
applications [173–175]. For further details of SHNO developments, issues, chal-
lenges, and application, we refer the reader to a recent review article [15].
In summary, MTJ-based STNOs are detectors continue to hold promise for applica-
tions, due to their high microwave power output and higher frequency tunability. In
this chapter, we discussed the bias dependence of spin torque, the mechanism gov-
erning linewidth broadening, synchronization, and modulation of the MTJ-STNOs.
Approaches to enhance microwave sensitivity for microwave detector applications
were also discussed. MTJ based STNOs have already reached the power needed for
applications. Recently the power of MTJ-based STNOs and the sensitivity of MTJ
based detectors have reached the level required for commercial applications. How-
ever, significant challenges remain to achieve the high power of MTJ-based STNOs
and the high sensitivity of MTJ based detectors to-gather with high frequency tun-
ability.
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Exploring the Variety of Random
Documents with Different Content
Josephus, and the works of the Church Fathers, proving the truth of
historical narratives from the mouths of many witnesses. Deï Rossi,
too, was the only one not satisfied with the data of tradition; he
accepted nothing as truth till he had subjected it to a searching
examination.
Chance brought to light the mental treasures of Deï Rossi.
Ferrara, where, after leaving Bologna, he had settled shortly before,
had been visited by a terrible earthquake (November 18th, 1570),
and the inhabitants were compelled to leave their ruined and
crumbling houses and seek places of refuge outside the city. In one
of the villages Deï Rossi happened to meet a learned Christian, who
was trying to overcome the gloomy thoughts caused by the
earthquake by reading a Greek book of Jewish antiquity. In
conversation Deï Rossi became aware that his co-religionists, even
those possessed of some culture, owing to their one-sided
absorption in the Talmud or obsolete philosophical writings, knew
nothing of their own brilliant literature of the period of the Second
Temple, whilst Christians resorted to it to dispel melancholy
thoughts. Encouraged by his Christian friend, he determined to
translate into Hebrew the "Letter of Aristas," supposed to be the
discourse of a Greek king about the wisdom of the Jews, in order to
make it accessible to his fellow-believers. He completed this task in
twenty days. This was the first-fruit of his learning, and it led him on
to further undertakings. His principal work, "Light of the Eyes,"
consists chiefly of parallel passages from Talmudic and profane
sources upon the same subjects. Deï Rossi's distinction rests upon
the fact that he did not adhere to tradition, but applied the methods
of scientific inquiry to what the multitude regarded as unassailable
truths, and that he used profane sources in elucidating them. The
actual results of this historical investigation, for the most part, have
proved unsound. Strong as Deï Rossi was in removing obstructive
rubbish, his power of reconstruction was small.
The value of his efforts appears in its proper light only if we
compare them with the circumstances of his time, or with the works
of contemporary writers on the same subject, as, for example, those
of Gedalya Ibn-Yachya; to these they form a complete contrast.
A descendant of the Italian branch of the noble Ibn-Yachya
family, Gedalya inherited taste for knowledge. He was born in 1515,
and died in 1587. His wealth enabled him to satisfy his taste by
collecting a magnificent library. In his voluntary and compulsory
journeys in northern Italy—for he was a preacher, and owing to the
intolerance of the popes had to lead an unsettled life—he had seen
and read much, both in sacred and profane literature, but without
independent judgment, without discrimination, and without
appreciation of the essence of truth. Ibn-Yachya's abbreviated
"History of the Jews," together with a chronicle of the world, called
"The Chain of Tradition," at which he worked for nearly forty years,
is a confused medley of authentic historical narratives and mere
fables. But in spite, or perhaps because, of its legendary contents,
his book has found more acceptance among Jews than the
researches of Deï Rossi. When the first edition of the latter's "Light
of the Eyes" found its way to Safet, the orthodox of that town
declared its contents to be heretical. Joseph Karo commissioned
Elisha Gallaico, one of the members of his rabbinical college, to draw
up an indictment, to be distributed amongst all Jews, ordering Deï
Rossi's work to be burned. The people of Safet likewise had an
inquisition. But Joseph Karo died (in Nisan, i.e., April, 1575) before
he had signed the indictment. The Italian Jews were not so fanatical
as to condemn Deï Rossi, for they knew him to be a pious and pure
Jew. But the rabbis of Mantua employed the procedure of Ben Adret
concerning the study of profane literature, that is, they forbade the
reading of Deï Rossi's works by young people under twenty-five
years of age. In consequence of this semi-official sentence of heresy,
the book exercised but little influence upon the Jewish world of that
day, or the generation immediately succeeding it, and has been
appreciated only in quite recent times, when it created a new,
enlightened view of history in Jewish circles. But in the Christian
world Deï Rossi's work was noticed much sooner, and was
annotated, and translated into Latin.
How, indeed, could a sober, critical method of inquiry have found
favor in an age when the mystic, dazing Kabbala was the first
authority, bidding men esteem blind credulity as the highest virtue,
and exciting visionary enthusiasm to the highest pitch of fanatical
intoxication? The visions of Solomon Molcho and Joseph Karo and
their fond enthusiasm about the Messiah were sober compared with
the excitement which reigned after their death, and celebrated a
veritable witches' Sabbath. During the last three decades of the
sixteenth century the Kabbala gained sole mastery in Palestine,
conjured up apparitions, and encouraged orgies of mysticism. It
spread thence over the whole of Turkey, Poland, Germany, and Italy,
darkening and confusing men's minds, having an evil influence even
upon their hearts, allowing no healthy thought to appear, or
branding such thought as heretical and sinful. Once again, as in the
early days of Christianity, Galilee, especially the district of Safet,
became the scene of a host of evil spirits, of people possessed with
devils, which challenged mystic exorcism, and revealed profound
mysteries; and it is impossible to say whether the possessed
appeared in consequence of the exorcisers, or the latter of the
former. It was a period of Kabbalistic mania, coincident with
profligacy and moral degradation, and its victims despised not only
the sciences, but even the Talmud with its exhortations to sobriety.
Then for the first time the Jewish world entered on a "dark age" of
its own, with all the appropriate credulity, while only the last traces
of such darkness were visible in Europe generally. This tendency was
exaggerated by two men, who by their fanaticism and visionary
extravagance infected a continually widening circle. These were
Isaac Lurya and his disciple Chayim Vital Calabrese.
Isaac Lurya Levi (born in Jerusalem in 1534, and died 1572) was
descended from a German family. Left an orphan at an early age by
the death of his father, young Isaac came to Egypt, to the house of a
rich uncle, Mardochaï Francis, a tax-farmer, and began to study the
Talmud. The dry study of the Talmud, which filled the mind with
voluminous learning, unfruitful hairsplitting, and mere formulas, yet
failed to satisfy the wants of the heart, seems to have become
repugnant to Lurya, and to have driven him to fantastic mysticism.
He preferred the awful loneliness of the Nile country to the noise of
the school; abstraction in worlds of mysticism and devout praying to
working out intellectual problems. He was greatly attracted by the
Zohar, which had then been printed for the first time, and, widely
spread abroad, had become accessible to everybody. The more
familiar he became with the Kabbala through his absorption in the
sounding emptiness of the Zohar, the more did he seek solitude, and
the less intercourse had he with men. He even neglected his young
wife, only visited his house from Sabbath to Sabbath, and spoke
little, that little being only in Hebrew. Lurya is said to have spent
several years in solitude in this manner, and the result was that like
all whose reason is weaker than their imagination, he became a
confirmed visionary. The mystic book, the Zohar, his constant
companion in this seclusion, aided in exciting his imagination. Firmly
convinced of its authenticity as the work of Simon bar Yochaï, and
also of the divine character of all the fantasies and follies therein
revealed, Lurya persisted in seeing in it high allusions and profound
wisdom. In his heated imagination he even saw Elijah, the teacher
of mysteries, face to face.
But what did the prophet Elijah, or the Zohar, or rather his own
heated imagination, reveal to him? First he took the trouble to put
system, unity, and logical order into the confusion and intricacies of
the Zohar, as if connected thought could be expected in the idle
chatter of a half imbecile. The hermit of Cairo sought to deduce from
it how God had created and ordered the world by means of the
mystic numbers (Sefiroth), or how the Godhead revealed itself in the
forms of substances, or how it concentrated itself within itself in
order to project the finite nature of created things from its own
infinitude. Thus he evolved an extraordinarily complicated system of
powers and opposing powers, forces and counterforces, forms and
degrees (Parsophin), in the four spheres of Separation, Creation,
Formation, and Transformation; and he clothed these empty
abstractions with such wondrous names, that he afterwards
complained, with reason, that no one could understand his mystic
system. Yet Lurya looked upon this intricate and complex theory of
the creation as only a kind of introduction to what seemed to him a
much more important and practical part of the Kabbala, whereby the
divine order of the world (Olam ha-Tikkun) could be brought about.
This practical Kabbala of Lurya rests upon a not less marvelous
doctrine of souls, also based upon the visions of the Zohar.
Our souls, he says, reflect the close connection between the
finite and the infinite, and, therefore, have a manifold character. The
whole of the soul material to appear in temporal life was created
with Adam, but each soul, according to its higher or lower degree,
was fashioned in, from, or with the first man, out of high or low
organs and forms. Accordingly, there are souls of the brain, the eyes,
the hands, and the feet. Each of these must be regarded as an
effluence, or spark (Nizuz), from Adam. By the first sin of the first
man—for the Kabbala finds original sin necessary for its fanciful
creations—the higher and the lower, the superior and the inferior
souls, good and evil, became confused and mingled together. Even
the purest beings thereby received an admixture of evil and the
devilish element of the "husk" (Kelifa). But the moral order of the
world, or the purification of the first man, cannot be brought about
till the consequences of original sin, the confusion of good and evil,
are obliterated and removed. From the most evil part of the soul
material emanates the heathen world; the people of Israel, on the
other hand, come from the good part. But the former are not quite
without an admixture of the original good, while the latter are not
free from an admixture of the corrupt and demoniac. This
imperfection gives the continual impulse towards sin, and hinders
the chosen fragment of the human race from following the law of
God, the Torah. The Messianic period will put an end to the
disturbance of divine order arising from the first sin, or abolish the
disorder which has since crept in, and will introduce, or see
introduced, the divinity of the world. Therefore, a complete
separation of good from evil must take place, and this can only
happen through Israel, if it or each of its members will lose or cast
away the admixture of evil. For this purpose, men's souls (especially
those of the Israelites) have to wander through the bodies of men
and animals, even through rivers, wood, and stones. The doctrine of
the transmigration of souls forms the center and basis of Lurya's
Kabbala, but he has a peculiar development of the idea. According to
this theory even the souls of the pious must suffer transmigration,
since not even they are free from the taint of evil; there is none
righteous upon earth, who does only good, and sins not. In this way,
Lurya solved the difficulty, which former Kabbalist writers could not
overcome.
But this separation of the good and evil elements in the world's
soul material, the expiation and obliteration of original sin, or the
restoration of the divine order in Adam, would require a long series
of ages, owing to the impulse towards sin continually present. There
are, however, means of hastening this process, and this was the
really original doctrine that Lurya enunciated. Besides the
transmigration of our souls, sinful and subject to demoniac forces as
they are, there is another mode of expiation, the elevation or
impregnation of the soul (Ibbur, superfœtatio). If a purified soul has
neglected various religious duties here on earth, or has had no
opportunity of fulfilling them, it must return to the earthly life, attach
itself to the soul of a living human being, and unite and coalesce
with it in order to retrieve this neglect. Or again, the departed spirits
of men freed from sin appear again on earth to support the weak
and wavering souls which cannot attain to good by their own efforts,
strengthen them and lead them to the final goal. These pure spirits
combine with weaker souls still struggling, and form a union with
them, provided that they have some affinity with one another, i. e., if
they originate from the same spark or organ of Adam, since as a rule
only similar (homogeneous) souls attract each other, while on the
other hand dissimilar (heterogeneous) souls repel each other.
According to this theory the banishment and dispersion of Israel
have for their purpose the salvation of the world or of men's souls.
The purified spirits of pious Israelites unite with the souls of men of
other nationalities in order to free them from the demoniacal
impurities that possess them.
Isaac Lurya imagined a complete system of the transmigration
and combination of souls. It also seemed to him important to know
the sex of a soul, for feminine souls are found in masculine bodies,
and vice versâ, according to the transmigration and attraction in
each case. It is especially important in contracting a marriage to
know whether the souls of man and wife harmonize with each other
in respect of origin and degree. By means of this secret the visionary
of Cairo expected to solve the other mystery, namely, how good
spirits may be conjured down from heaven, and in a measure
compelled to enter the bodies of living men, and thus made to
divulge revelations of the world beyond. Hereby he believed that he
held the key to the kingdom of the Messiah and the regeneration of
the world. Lurya also believed that he possessed the soul of the
Messiah of the branch of Joseph, and that he had a Messianic
mission. He saw spirits everywhere, and heard their whispers in the
rushing of the waters, the movements of the trees and grass, in the
song or twittering of birds, even in the flickering of flames. He saw
how at death the souls were set free from the body, how they
hovered in the air, or rose out of their graves. He held intimate
intercourse with the saints of the Bible, the Talmud, and with the
rabbis, in particular with Simon bar Yochaï. In short, Lurya was a
ghost-seer and raiser of the dead, a second Abraham Abulafia, or
Solomon Molcho, arousing hopes of the coming of the Messiah by
Kabbalistic jugglery, but with all this fanaticism he was sober and
sophistical. He introduced the casuistry of the Talmud into the
Kabbala.
In Egypt, Isaac Lurya found little or no favor with his labyrinth of
higher worlds and his theories of creation and redemption. To realize
his scheme of redemption he migrated with his wife and child to
Safet, the Jerusalem of mysticism, where the mystic doctrine
flourished, and the Zohar, the spurious work of Moses de Leon, was
exalted to the same level as the Law of Moses ben Amram. Almost
the whole college of rabbis and the chief leaders of Safet were
Kabbalists. This place was at the time a flourishing city inhabited
only by Jews. The members of the community knew little of
oppression or the cares of life, and so the Kabbalists could spin
mystical theories to their hearts' content. They felt as safe under the
favor that the Jewish Duke of Naxos found with the sultan, as if in a
state of their own, politically independent. The Kabbalists had gone
so far in their imitation of Catholicism that they had adopted
auricular confession and the adoration of martyrs. And this was the
stage on which Lurya, the creator of the new Kabbala, was to
originate new aberrations.
At first (about 1569), he appears to have received little attention
in the city of Kabbalists. Only through his acquaintance and
connection with a still greater visionary, perhaps not quite so honest
as himself, did he become a person of consequence, and infect
everyone with his waking dreams. This man was the Italian Chayim
Vital Calabrese (born 1543, died 1620), whose father, a copyist of
the scrolls of the Law, had traveled to Palestine from Italy. Vital had
learned nothing thoroughly in his younger days; he had only gained
a smattering of the Talmud and mystic lore. He possessed a wild,
extravagant imagination, and a decided inclination for adventure and
sensation. For two years and a half Vital had occupied his time with
alchemy and the art of making gold. From this mystic art he turned
to Lurya's Kabbala. It is not known which of these two men first
sought the other, but it is certain that each, without wishing it,
deceived the other. Together they visited desolate places and graves,
particularly the grave of Simon bar Yochaï, the feigned author of the
Zohar, in Meïron. This was Lurya's favorite spot, because there he
fancied he could draw down upon himself the spirit of this supposed
chief of the mystics. Now and again Lurya sent forth his disciple to
conjure up spirits, and for this purpose delivered to him certain
formulas made up of the transposed letters of the name of the Deity.
Of course, evil spirits fled before Vital's gaze, whilst good spirits
attached themselves to him, and communicated their secrets.
It was Vital who spread sensational reports concerning the
extraordinary, almost divine gifts of his master, and of his power
over departed and living souls; doing so, it appears, with an artful
calculation of effect and publicity. Lurya, once so isolated, now found
himself surrounded by crowds of visitors; Kabbalists, young and old,
came to listen to the new revelation. Several disciples attached
themselves to him, and he communicated to them his confused
thoughts, assigned to each the original Adamite soul that dwelt in
him, the transmigrations which it had undergone before its present
corporeal existence, and its functions on earth. It never occurred to
these people, already enmeshed in the Kabbalistic net, to doubt the
truth of these communications. The disciples that gathered round
him Lurya formed into two classes: the "initiated" and the "novices."
Mystical conversations and notes, the interviewing and
summoning of spirits, formed the occupation of Lurya and his
followers. In short, Lurya was on the eve of founding a new Jewish
sect. On the Sabbath he dressed in white, and wore a fourfold
garment to symbolize the four letters of the name of God. The
underlying fact of all his revelations and exertions was that he was
the Messiah of the race of Joseph, the forerunner of the Messiah of
David's line. This, however, he only furtively hinted to his disciples.
His delusion was that the Messianic period would commence at the
beginning of the second half of the second period of a thousand
years since the destruction of the Temple, i. e., in 1568.
The sudden death of the mystic, at the age of thirty-eight,
conduced still more to his glorification. Death is wont to transfigure
natures like his, and veneration for them increases as years roll on.
With Eastern exaggeration, his disciples regarded him as even more
than a worker of wonders; they called him the "Holy and Divine,"
and sought, for their own glory, to win adherents for him and his
visionary extravagances. They declared that, if Lurya could only have
lived five years longer, he would have improved the world so
effectually, that the Messianic period would certainly have begun.
Abraham Abulafia, who had evolved a Kabbalistic medley from his
own consciousness, was declared a heretic, and persecuted. Isaac
Lurya, who had done the same thing with the Zohar as a foundation,
was almost deified.
After Lurya's death, Vital Calabrese came to the fore. He
immediately usurped a kind of authority over his fellow-disciples,
pretended that Lurya on his deathbed had appointed him his
successor, and, in feigned obedience to a dying request of his
master, took away from them the written notes given them by Lurya.
Vital let it be understood that he was the Messiah of the race of
Joseph. However, some disciples did not pay any attention to this,
and forthwith taught in various countries what they had received
from Lurya himself. This was especially done by Israel Saruk in Italy,
whither he had traveled.
The harm that the Kabbalistic doctrines of Lurya caused in
Jewish circles is inexpressible. Judaism became surrounded with so
thick a husk of mysticism, that it has not even yet succeeded in
entirely freeing itself, and showing its true kernel. Through Lurya's
influence there was formed, side by side with the Judaism of the
Talmud and the rabbis, a Judaism of the Zohar and the Kabbala. For
it was due to him that the spurious Zohar was placed upon a level
with, indeed higher than, the Holy Scriptures and the Talmud.
The mysticism of Lurya laid stress upon an idea which has been
strangely neglected in Jewish circles, viz., devotion in prayer, but
even this devotion degenerated into Kabbalistic trifling. Every word
and every syllable of the ordained prayers was to be meditated on
devoutly, so that one might reflect upon the worlds of the Sefiroth,
the number of the names of God hidden therein, and many other
things. Lurya's Kabbala certainly inculcated the preservation of an
unruffled disposition, and interdicted dejection, or outbreaks of
anger and ill-humor. But this serenity, from its mystical setting,
received a touch of constraint and unpleasantness, like the laughter
of a madman. The Sabbath, with its prayers and meals, forms the
central point of Lurya's mystic teaching. He looked upon it as the
visible representation of the world of the Sefiroth, as the
embodiment of the Divinity (Shechinah) in temporal life, and all
actions done or left undone on that day had an influence upon the
higher world. Lurya's followers welcomed the Sabbath, "the mystic
bride," with chanting, and for this purpose Lurya composed Chaldaic
songs full of obscure and meaningless formulas. His Kabbala also
introduced a second Day of Atonement. The "Day of Hosannas," the
seventh day of the Feast of Tabernacles, was formerly observed as a
day of festivity. Even Joseph Karo did not venture in his code to
attribute a higher, mystical, religious function to this day. Lurya's
school first raised it, on the authority of the Zohar, to the rank of a
minor day of expiation, introduced the practice of holding a mystic
vigil the previous night, and perceived in every leaf of the willow
branches, and in the seven-fold processions round the scrolls of the
Law, a higher, mystical meaning. In relation to morality, too, the
mysticism of Lurya had a corrupting influence. It demanded a
"harmony of souls" as a condition of marriage, and, therefore,
whenever disagreement showed itself in married life, it was said that
the marriage was not a union foreordained by the harmony of the
Sefiroth. Kabbalists, therefore, separated from their wives in
consequence of the smallest dissension in married life, to seek out
the harmonious soul predestined for them. Thus divorce became
frequent in Kabbalistic circles. Kabbalists often left their wives and
children in the West, and, migrating to the East, contracted a new
marriage, or several new marriages, and the children of the different
marriages knew nothing of one another.
These corrupting mystic doctrines did not remain a dead letter,
but were forthwith put into practice by their adherents. Thus, the
brilliance shed by the Jewish Duke of Naxos and other influential
Jews at the Turkish court over their fellow-believers in the East,
came to resemble the light of the will-o'-the-wisps that make the
waters of a stagnant marsh gleam with a flickering light. The
religious stagnation at the time was glaring indeed; there was a
complete relapse into heathenism; and what was worse, there
sounded no warning voice which recognized the mischief, or
stigmatized, though ever so feebly, the corruption as it really was.
Perhaps the feeling of complete security in which the Jews in Turkey
reposed under mighty protectors of their own race had encouraged
this religious disorder. In any case, it did not decrease as this
protection gradually disappeared, when the influence of Joseph of
Naxos ceased on the death of Sultan Selim in 1574. His successor,
Sultan Murad III (1574–1595), left the Jewish duke in possession of
his rank and offices according to his father's dying request. But he
no longer had direct influence over the divan; he was supplanted by
his adversary, the grand vizir, Mahomet Sokolli, and his rival,
Solomon Ashkenazi, and could accomplish nothing without intrigues
through the agency of the harem. Joseph Nassi did not long survive
his partial disgrace; he died of calculus, on August 2d, 1579,
sincerely lamented by the Jews. His accumulated treasures melted
away even as his ambitious designs. The avaricious sultan, Murad,
who slept upon heaps of gold in order that they might not be stolen
from him, by the advice of Mahomet Sokolli confiscated all his
property, ostensibly to cover his debts. The widowed duchess, Reyna
Nassi, with difficulty retained her dowry of 90,000 ducats out of her
husband's estate. This noble woman, although she certainly did not
possess the spirit either of her mother, Donna Gracia, or of her
husband, determined like these to spend her wealth in the interests
of Jewish knowledge. She set up a Hebrew printing press in her
palace of Belvedere, and afterwards in a village called Kuru-Gismu,
on the European side near Constantinople. But she was misled by
Joseph Askaloni, a business manager devoid of all taste, to whom
she had intrusted the direction of her press, so that only writings of
no importance, which had far better have remained in obscurity,
were published in her establishment (1579–1598). And so this noble
family of two men and two women, renowned in their own time, left
no worthy or lasting memorial; and their deeds, prompted by the
noblest intentions, have perished in the stream of the ages.
Duke Joseph having disappeared from the scene, the prestige of
the Hebrew statesman, Solomon Ashkenazi, the peacemaker
between Turkey and Venice, increased. But, much as he was able to
accomplish by means of his diplomatic arts, he did not, like Joseph
of Naxos, stand in the forefront of events as a Turkish dignitary, but
rather remained in the background as a wise and silent mediator.
Solomon Ashkenazi had no access to the sultan himself, but only
held secret intercourse with the successive grand vizirs, whose right
hand man he was. The negotiations between Turkey and Spain to
procure a peace, or at least a modus vivendi, desired as it was by
both sides, owing to pride on both sides, were delayed, broken off,
and renewed. These diplomatic discussions were conducted by
Solomon, who possessed greater qualifications for that purpose than
anyone else, and the matters in dispute were partially brought to a
conclusion by him. He was particularly careful to maintain a good
understanding between the Porte and Venice, and was on this
account rewarded by the doge, his sons being allowed to live in
Venice at the expense of the state.
Also Jewish women of wisdom and good sense, having skill in
medicine, gained great influence by means of the harem under the
sultans Murad III, Mahomet IV, and Achmed I. Among these women,
Esther Kiera, widow of one Elias Chendali, specially distinguished
herself. She was a great favorite with the sultana Baffa, herself the
favorite wife of Murad, who influenced politics under her husband
and afterwards during the reign of her son. If a Christian state
wished to gain any object at the Porte, it had first to win over the
Jewish go-between, Kiera. The Venetians particularly knew how to
turn this fact to account. All ambitious persons who aimed at
attaining high office paid respect to Kiera, and addressed her with
flattery. Naturally, she enriched herself by her secret power, as did
everyone in Turkey who, however strong or weak he might be,
formed one of the spokes in the wheel of the state. She showed
great interest in her race, supported the poor and suffering, fed the
hungry, and comforted the sorrowful. Jewish science was helped by
her generous hand. Zacuto's history, as mentioned before, was
published at her expense. Naturally her position excited envy. Esther
Kiera imprudently allowed herself to be implicated in the
appointment of cavalry officers, first promising one man a high post
and then bestowing it on another. The Turkish Spahis, the proudest
class of soldiers, took this treatment very ill, plotted together, and
demanded her head. The deputy grand vizir Chalil wished to save
her and her sons, and allowed them to take refuge in his palace. But
on the very steps Esther Kiera and her three sons were seized by the
Spahis, torn to pieces, and their limbs hung upon the doors of the
favored magnates who had received their posts through her
influence.
Under Sultan Achmed I, another Hebrew woman, the widow of
the statesman Solomon Ashkenazi, gained great consideration. She
was so fortunate as to cure the young sultan of the smallpox, which
shortly after his accession threatened his life, and for which the
Turkish physicians knew no remedy. She was richly rewarded for
nursing him back to health. But such signs of favor towards Jews
became continually rarer in Turkey, and at last ceased altogether, as
the empire sank into enervation, and each sultan became a
Sardanapalus; while the harem, on the one hand, and the Spahis
and Janissaries, on the other, held the reins of power. The glory of
the Turkish Jews was extinguished like a meteor, and plunged into
utter darkness, from time to time illuminated by fanciful visions.
Extortion, robbery, and open deeds of violence, on the part of the
pashas towards Jews, began to occur daily, since they were now
deprived of a powerful protector at the Sultan's side. The center of
Judaism was shifted to another stage.
CHAPTER XVIII.
THE JEWS IN POLAND.
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