2023 11th International Conference on Emerging Trends in Engineering &

2023 11th International Conference on Emerging Trends in Engineering & Technology - Signal and Information Processing (ICETET - SIP) | 979-8-3503-4842-2/23/$31.00 ©2023 IEEE | DOI: 10.1109/ICETET-SIP58143.2023.10151553

Technology - Signal and Information Processing (ICETET - SIP)

Review on Different Emulator memristor modelling

and application
Soni. K Satyajeet sahoo
Dept of ECE, Dept of ECE,
Vignan’s Foundation For Science, Technology and Research, Vignan’s Foundation For Science,
Vadlamudi, Guntur, Andhra Pradesh, 522213, India, Technology and Research, Vadlamudi,
[email protected] Guntur,Andhra Pradesh,522213,India.
[email protected]

Abstract— This study presents an overview of operational electrical components. A new member of this exclusive group is
transconductance amplifiers and memristor emulator circuits. In the "memristor," an abbreviation for "memory-resistor."
this work, many kinds of emulator circuits are investigated. Memristors are a unique kind of two-terminal circuit element that
Frequency and current-voltage characteristics are investigated with vary from the other three in that they are nonlinear, non-volatile,
respect to emulation circuits. A solid-state circuit that can simulate and have a high-density storing mechanism [32]. Memristors are
the behaviour of a memristor. We provide the groundwork for a used in electronic memory devices. [Note: Memristors are not
compact CMOS circuit that, by simulating an idealised memristor's interchangeable with other types of circuit elements.] Memristors
properties, might help close the gap between theoretical
have the advantageous property of maintaining the same
considerations and practical implementation on a chip. This circuit
resistance state until the excitation (voltage or current) undergoes
uses a commercially available integrated circuit to simulate the
operation of a model titanium dioxide memristor. An easy-to-
a change in amplitude as well as polarity. This is an additional
implement CMOS memristor emulator that makes advantage of the benefit of using memristors. Because of this, memristors are now
technology's dynamic threshold feature. Capacitors are not required widely accessible as a kind of nonvolatile memory [25], and there
for use with this proposal. These proposals for circuits based on is no detrimental influence that this has on either information
grounded memristor emulators have minimal static power technology or neuromorphic processing. Because of the
consumption. The majority of the CMOS memristor emulator challenges that are inherent in their manufacturing, research on
circuit is made up of a variable resistor with two terminals. The memristors was put on hold for a considerable amount of time.
voltage that is put across these terminals determines the resistance Nevertheless, the year 2008 marked the beginning of a new era of
of the variable resistor. A capacitor is responsible for controlling the possibility when the HP laboratory accomplished the effective
value of a resistor and storing the "status" of a memristor. Resistive synthesis of a Titanium di-oxide (TiO2) memristor [3]. Since
memristors, ferroelectric memristors, polymeric memristors, then, several variants of memristors have been built using a wide
resonant-tunneling diode memristors, manganite memristors, and variety of materials, including the ferroelectric memristor [3], the
spintronic memristors are some of the most prevalent kinds of tantalum oxide memristor [8,14], and the spintronic memristor
memristors that are used today. However, there are many more [5]. The sections that follow will go through some examples of
forms of memristors that are also in use. This study includes a such memristors. On the other hand, these recently discovered
review of memristor materials characteristics, switching processes, memristors are complex, making it challenging to measure them
and prospective applications, as well as a performance comparison statistically. There is little question that the HP TiO2 memristor
between several memristor emulators and a suggested memristor
will continue to play an important part in the industry. The
emulator, with the goal of assisting researchers in understanding the
physical principles of the memristor and so providing a hopeful
manufacturing complexity and high pricing of the memristor
future for memristor devices. Additionally, this paper presents a design developed by HP Labs now prevent its commercial
memristor emulator that has been presented. Machine learning, viability, which in turn prevents the widespread use of memristors
Non-von Neumann computing, chaotic circuits, neuromorphic in real-time applications. Therefore, numerous methods have
computing, and machine learning circuits are all areas where the been suggested to mimic the actual physical gadget. Due to the
memristor emulator circuit might be useful. It can be built and correlation between charge and flow, simulations and statistical
fabricated using typical commercial CMOS technology. The analyses of memristor circuits are encouraged to make use of
frequency range of the proposed memristor emulator has been nonlinear functions. A memristor, as proposed by Chua [4], is
proved to be retained for grounded setups by use of simulations of characterized by a nonlinearity that is tedious and piecewise
cadence. Complementary metal-oxide semiconductor (CMOS) linear. To further understand chaos and divergence, we may
environment using TSMC 45nm technology parameter. substitute the models proposed by Bao et al.
Keywords— Memristor Emulator, Mosfet-C, Material, [6,39,32,25,27,40,41] into Chua's circuit and see what happens.
modeling, applications. In part because of these new mathematical models, we now have
a better understanding of the transient and dynamic behavior of
I. INTRODUCTION memristor circuits. Multiple memristor emulators, such as the HP
Recent advances suggest that the scalability and TiO2 emulator [11], quadratic flux-controlled emulator
longevity of CMOS integrated circuit technology are rapidly [6,37,38,39,7], and the integrator-based SPICE emulators [21],
reaching saturation. Scientists are now looking for have been created to help researchers learn more about the
alternatives to CMOS in an effort to modernize the properties of memristor circuits. Some circuits, such as the diode-
semiconductor industry. Therefore, the development of non- bridge [12] and the light-dependent resistor [13], are shown to
CMOS technologies, such as the memristor, which has display memristor features when using these emulators. In
nano-scale dimensions and applications that need little addition, many analogue circuits using memory components that
power, has proved itself to be a viable alternative. 1971 was function similarly to the conventional memristor have been
the year when L.O. Chua first demonstrated the charge- developed [9,18,15,19,43]. The following schematic illustrates a
current connection and mathematically demonstrated the simple circuit that may be used to simulate a memristor using
existence of the "Memristor." The resistor, the capacitor, and components that are readily accessible on the market. every one
the inductor are sometimes referred to as the "big three" of of the three defining properties of a memristor device, including
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 the current-voltage characteristic need to have three things: ⅆ𝑤(𝑡) 𝑅𝑜𝑁
(1) a pinched curve, (2) a hysteresis curve, and (3) a non- = 𝜇𝑣 ⅈ (𝑡) ----------(5)
ⅆ𝑡 𝐷
linear relationship. Higher frequencies result in the µv = dopant mobility, Velocity of drift is linearly proportional to the
development of a linear hysteresis curve. current (i) is called as linear drift model. W(t) is given as
𝑅𝑜𝑁
II. MEMRISTOR THEORY 𝑤 (𝑡) = [𝜇𝑣 𝑞 (𝑡)] -------------(6)
𝐷2
In the memristor, the voltage and current interrelation is Relationship between the charge and flux of the Tio2 memristor is given
interpreted by, by [3],
ⅆ𝜙
𝑣(t) = R(t)I(t) = ⅈ (𝑡) --------------(1) 𝑀=
ⅆ𝜙
≈ 𝑅𝜃𝑓𝑓 [1 −
𝜇𝑣 𝑅𝑜𝑁
𝑞 (𝑡)] ------------(7)
ⅆ𝑞 ⅆ𝑞 𝐷2
In this model, the charge and flux are represented at time Consider the memristance in equation (6) to be a linear function of the
t by the symbols (t) and q(t), respectively. Therefore, the charge q (t). Relationship between the charge and flux of the Tio2.
resistance may be defined as the angle that exists between q
and time (t) at the point in the memristor's operational point III. MEMRISTOR SYSTEMS ATTRIBUTE
when there is zero current flow (q = q0). The resistance will In a study that is considered to be important, Chua
vary with the operating point if the q-resistance curve is [1,] described a memristor as a two-terminal circuit-
nonlinear. Unless an additional voltage or current is theoretic notion. This definition was later expanded to
introduced, neither the resistance nor the operating point accommodate a larger class of memristive systems
will change. Because of this, the signal is maintained at the [2,46,36]. The following equation is a general one that may
same level as the memristor's resistance value, which is also be used to explain any one of these memristive systems:
referred to as the memristance (M). Consequently, flux
definite by 𝑦 = 𝑔(𝑥, 𝑢, 𝑡)u(t) ----------(8)
𝑡
φ(t) = ∫−∞ 𝑣(𝜏)𝑑𝜏 ----------------(2) 𝑥̂ = 𝑓 (𝑥, 𝑢, 𝑡) -------------(9)
At each discrete time instant, the input signal u(t) is substituted
Memristor resistance (also known as "resistance") "M" with the desired output y. (t). Time-dependent rate of change of
may be adjusted using an external voltage or current signal. the state vector x, where x is a collection of n state variables that
each indicate a distinct state of the device's internal memory. This
equation represents the system's outputs (represented by u and y),
a continuous n-valued function (represented by f), and a scalar
function (represented by g). [3], [27].
One way to conceptualise this connection is as a voltage-
controlled memristor, where the memristor's current I is
proportional to the voltage (v) according to
ⅈ = 𝐺 (𝑥 ). 𝑣 ------------(10)
With its its state update equation
𝑥̂ = 𝑓(𝑥, 𝑣, 𝑡) -------------(11)
Here, G(x) is referred to as memductance (memory conductance),
and it is dependent on the charge that has flowed across the device [10 ].

Figure.1. shows the emergence of Hp TiO2

memristor [3].
Two platinum electrodes are sandwiched by a layer of
titanium dioxide (TiO2) in a TiO2 memristor (TiO2-x). The
TiO2 layer, which is undoped, and the TiO2-x layer, which
is doped, are both referred to as the underlying layer,
although for different reasons.
ⅆ𝜙
R = M = ⅆ𝑞 | ------------(3)
(𝑞𝑞 ,𝜙𝑞 )
The boundary between the TiO2 layer and the TiO2-x layer shifts
in response to an applied voltage or current. That happens because
the voltage or current was applied. This occurrence may be linked
to a shift in the resistance between the electrodes. TiO2 memristor
thicknesses are referred to as D for the thickness of the sandwiched
component and w for the thickness of the doped region. We'll also
use the notation RON for resistances in regions with a high
concentration of dopants and ROFF for those in places with a low
concentration. Resistances at high and low dopant concentrations
are denoted by RON and ROFF, respectively. The following
equation provides the most accurate representation of the dynamic
relationship between voltage and current,
𝑤(𝑡) 𝑤(𝑡)
𝑣 (𝑡) = (𝑅𝑜𝑁 + 𝑅𝜃𝑓𝑓 (1 − )) ⅈ (𝑡)------(4)
𝐷 𝐷
𝑤(𝑡)
where is defined as the state variable. In the TiO2
𝐷
memristor [3], the amount of current i and more specifically
the current's magnitude. Figure.2. A short history of research about
memristor
Authorized licensed use limited to: MANIPAL INSTITUTE OF TECHNOLOGY. Downloaded [1,3,2,35,47,48,49,50].
on June 01,2025 at 12:16:12 UTC fromDemonstrates a brief apply.
IEEE Xplore. Restrictions
 history of memristor research and the viewpoint of this study. In 1971, when Chua provided a model for the memristor
hypothesis, the company was established. The design of memristors has been studied by researchers from a wide variety of
fields, such as mathematics, circuitry, nanotechnology, and application. This highlights the potential for discrete memristors
in practical settings.
References No of No of active No of No of Simulation Electro Floating / Power Max
floating component grounded grounded Experimen nically grounded Supply Operatin
passive Active passive tal Control memristor g
elements elements elements lable emulator Frequenc
y
YenerSc.et.al --- 10DDCC 8 4R, 1C Simulation No Grounded ±1.25V NA
[44] Transistors
Alharbi.et.al ----- 2CCII+s, 1 2 Transistor 3R, Simulation No Grounded ±1V 10Khz
[51] Multiplier 1C
circuit 1
buffer
Hassanein, A. ----- 3 CCII, 3 Transistor 3R, Simulation No Grounded ±12V 4Khz
M.et.al 1 Multipier 1C
[52]
Ranjan, R. ----- 4 MO-OTA 4 Transistor 3R, Simulation No Grounded ±2.5V 150Khz
K.et.al 1C
[53]
Ayten UE.et.al 1R 1CBTA, 3 1R, 1C Simulation No Grounded ±0.9V 10khz
[45] 1Multiplier Transistors
Minaei.et.al 1L,1C 1 Adder and 1 3 1D Simulation No Grounded ±1.25V 30Hz
[28] Subtractor Transistors
Kim H et.al 1R 2OPAMPs, 1 10 1R, 1C Both No Grounded / ±5V 16khz
[16] Multiplier Transistors Floating
Abuelma'matti 2R,1D 3CFOAS(AD 5 2R, 2C Experiment No Grounded ±5V 700hz
.et.al [22] 844) Transistors al
Sanchez- 1R 1CCII(AD844 2 1C Both No Grounded ±10V 860 khz
Lopez C. et.al ),1 Multiplier Transistors
[48] (AD844)
Babacan.Y.et.a --- 1 MO-OTA,1 2 1R, 1C Both Yes Grounded ±1.25V/± 5Khz
l [34] Multiplier Transistors 5V
Yesil.B.et.al 1R 1DDCC,1 3 1R, 1C Simulation No Floating ±1.5V 1Mhz
[20] Multiplier Transistors
Sozen H. et.al 3R 3OTAs,4CIIs 4 3R, 1C Both Yes Floating ±15V 5khz
[30] Transistors
Sanchez- 2R 4CCIIs 3 3R, 1C Both No Floating ±10V 860khz
Lopez.et.al (AD844), Transistors
[23] 1Multiplier
(AD844) CIIs
Yadav, N
1C 1 OTA 2 Transistor 1C Both No Grounded / ±0.9V 1Mhz
.et.al
[54] 1 CDBA Floating
Gupta.S.et.al
1C 1 OTA 2 Transistor 1C Both No Grounded / ±0.9V 1Mhz
[55]
1 CDTA Floating
Kacar, F.
1C 1VDCC 2 Transistor --- Simulation No Floating ±0.9V 2Mhz
et.al
[56] 2PMOS
Nisha Yadav
1C 1 VDGA 1 Transistor 1C Both No Grounded / ±0.9V 1Mhz
.et.al
[57] Floating
Babacan.Y.et.a --- 1 OTA 2 1C Simulation No Floating ±1V 12hz
l [29] Transistors
Li Q, serb A. --- --- 10 3C Simulation No Floating ±1V 5hz
et.al [31] Transistors
Abdullah --- --- 7 1C Both No Grounded ±8V 50Mhz
Yesil.et.al [42] Transistors
Proposed --- --- 5 --- Simulation yes Grounded ±1V 1Mhz
memristor Transistors
Emulator

Table. I Comparison of Memristor emulator circuit.

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 Figure. 4. Red and green lines represent the input AC
voltage time responses of the memristor emulator model,
respectively (1 MHz).

Figure.3. The designed Proposed grounded memristor

emulator based on 5 MOSFET.

Depicts the proposed grounded memristor emulator, Figure.5. The current-voltage characteristic(hysteresis) of the
which comprises five MOSFETs (four NMOS and one PMOS). An planned memristor emulator model is 1.5V with a 0.1V
integrated circuit that benefits five MOSFETs. Due to their increase at 1MHz.
connection configuration, all MOSFETs in these two proposals are
compelled to operate in the saturation area. V. CONCLUSION
The Proposed grounded 5 MOSFETs memristor Therefore, emulation models and circuits are required to
emulator shown in above figure. The mode of memristor demonstrate actual memristors since researchers do not have
(incremental) characteristics can be selected by employing the easy access to them. Memristors are very power-efficient
connection scheme. Three NMOS and one PMOS (NM0, NM1, and compact electronics. Simulation findings have been
NM2 & PM1) act as forwarding and reverse transconductance. NM3 provided with a suggested CMOS memristor emulator
act as current controller. The highest frequency for emulator the circuit. In this research, we provide a five-transistor
pinched hysteresis curves were obtained with sinusoidal input at MOSFET circuit that can emulate a memristor. Emulators
frequencies of 1Mhz for proposed 5 MOSFETs based grounded for memristors are documented in the literature, and they
memristor emulator. The biasing voltage varied from -1.5v to +1.5v
may be built from a variety of active and passive
increment to 0.1v.
components. However, most of them are very complex and
IV. SIMULATION AND EXPERIMENTAL RESULTS not particularly useful for most applications. In compared to
other memristor emulators that have been published in the
Provided are simulation results for a suggested memristor literature, some of which are seen as having only VLSI
emulator circuit that makes use of the Candence analogue implementation or discrete circuit parts, the one proposed
Environment and the features of TSMC's 45nm here uses less circuit components. All these recommended
manufacturing process. emulation circuit configurations are quite elementary.
Emulator circuits based on these recommendations need just
five CMOS transistors and no extra capacitor. Researchers
have discovered that the hysteresis curve flattens out and
disappears altogether above 1 MHz as the frequency
increases. Because they exhibit linear properties at high
frequencies, it is believed that emulator circuits are not
suited for use in high frequency circuits. They may be
vulnerable in certain and low-frequency circuits. Due to the
fact that each emulator circuit has unique properties, it has
been shown that the memristor circuits exhibit linear
characteristics when their frequencies are raised to 1MHz.
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