Basic Electrical & Electronics

Engineering (BEEE)

Chapter 6 : Introduction to
Transistors

Prof. Sunil Nagare : 9619015411

M.Tech (VJTI) & B.Tech (SPIT)
 BJT : Bipolar Junction Transistor
Structure
• A Bipolar Junction Transistor (BJT)
is a semiconductor device that
consists of three layers of doped
semiconductor material.
• It has three terminals: the base,
the collector, and the emitter.
• BJTs are classified into two types:
NPN and PNP, based on the
arrangement of the
semiconductor layers.
Prof. Sunil Nagare : 9619015411
M.Tech (VJTI) & B.Tech (SPIT)
 BJT : Bipolar Junction Transistor
Structure of NPN
• Emitter (E): Heavily doped n-
type semiconductor region.
• Base (B): Lightly doped p-type
semiconductor region.
• Collector (C): Moderately doped
n-type semiconductor region.

Prof. Sunil Nagare : 9619015411

M.Tech (VJTI) & B.Tech (SPIT)
 BJT : Bipolar Junction Transistor
Operation of an NPN Transistor:
• The operation of an NPN transistor can be understood by considering the
biasing of its two junctions: the base-emitter junction (BEJ) and the base-
collector junction (BCJ).

Prof. Sunil Nagare : 9619015411

M.Tech (VJTI) & B.Tech (SPIT)
 BJT : Bipolar Junction Transistor
Forward Bias:
• When the BEJ is forward-biased, a majority carrier (electrons) current flows
from the emitter to the base.
• A small portion of these electrons recombine with holes in the base region.
• The remaining electrons, due to the narrow base width, diffuse across the
base and are attracted to the collector by the reverse-biased BCJ.

Prof. Sunil Nagare : 9619015411 M.Tech (VJTI) & B.Tech (SPIT)

 BJT : Bipolar Junction Transistor
Reverse Bias:
• The BCJ is reverse-biased, which creates a strong electric field that attracts
the majority carriers (electrons) from the emitter across the base region.
• This reverse bias also prevents the flow of majority carriers (holes) from the
collector to the base.

Prof. Sunil Nagare : 9619015411 M.Tech (VJTI) & B.Tech (SPIT)

 BJT : Bipolar Junction Transistor
• Emitter Current (IE): The total current flowing into the emitter.
• Base Current (IB): The small current flowing into the base.
• Collector Current (IC): The current flowing out of the collector.
• The relationship between these currents is given by: IE = IB + IC
Amplification:
• The BJT can be used as an amplifier because a small change in the base
current (IB) can produce a large change in the collector current (IC).
• This current gain is typically denoted by the symbol 'β' (beta).
β = IC / IB
• Applications of BJTs: Prof. Sunil Nagare : 9619015411
Amplifiers, Switches, Oscillators & Logic gates M.Tech (VJTI) & B.Tech (SPIT)
 BJT Configuration : Common Emitter
• In a common emitter configuration, the
emitter terminal is common to both
the input and output circuits.
• This configuration is widely used due to
its high voltage gain & current gain.
• Input Circuit: Consists of a voltage
source (Vin) and a resistor (R1)
connected to the base.
• Output Circuit: Consists of a voltage
source (Vcc), a resistor (R2) connected
to the collector, and a load resistor (RL)
connected between the collector and
the emitter.
Prof. Sunil Nagare : 9619015411 M.Tech (VJTI) & B.Tech (SPIT)
 BJT Configuration : Common Emitter
Operation:
• Input Signal: A small AC signal is
applied to the base-emitter junction.
• Base Current: The input signal
modulates the base current (IB),
causing it to vary.
• Collector Current: Due to the
transistor's current gain (β), a much
larger variation in collector current (IC)
occurs.
• Output Signal: The varying collector
current flows through the load resistor
(RL), producing a larger AC voltage
across it.
Prof. Sunil Nagare : 9619015411 M.Tech (VJTI) & B.Tech (SPIT)
 BJT Configuration : Common Emitter
Characteristics:
• High Voltage Gain: Typically provides a voltage gain greater than 1.
• High Current Gain: Provides a significant current amplification.
• Phase Inversion: The output signal is 180 degrees out of phase with the
input signal.
• Wide Range of Applications: Used in various applications, including
amplifiers, oscillators, and switching circuits.

Prof. Sunil Nagare : 9619015411

M.Tech (VJTI) & B.Tech (SPIT)
 FET : Field Effect Transistor
• A Field Effect Transistor (FET) is a type of semiconductor device that
utilizes an electric field to control the flow of current between two
terminals, known as the source and the drain.
• Unlike bipolar junction transistors (BJTs), FETs are unipolar devices,
meaning they rely on only one type of charge carrier (electrons or holes)
for conduction.
Basic Structure:
• A typical FET consists of three main terminals:
• Source: The terminal where the majority charge carriers enter the device.
• Drain: The terminal where the majority charge carriers exit the device.
• Gate: The terminal that controls the flow of current between the source
and drain by applying a voltage. Prof. Sunil Nagare : 9619015411
M.Tech (VJTI) & B.Tech (SPIT)
 Types of FET : JFET
1) Junction Field-Effect Transistor (JFET):
Structure:
• Consists of a semiconductor channel (n-type or p-type) doped with impurities.
• A gate terminal is formed by a reverse-biased PN junction that surrounds the
channel.

Prof. Sunil Nagare : 9619015411 M.Tech (VJTI) & B.Tech (SPIT)

 Types of FET : JFET
1) Junction Field-Effect
Transistor (JFET):
Operation:
• When a reverse bias voltage is
applied to the gate, it depletes
the channel of majority carriers,
thereby reducing the channel's
conductivity.
• As the gate voltage increases, the
channel narrows, and the
current flow between the source
and drain decreases.
Prof. Sunil Nagare : 9619015411
M.Tech (VJTI) & B.Tech (SPIT)
 Types of FET : MOSFET
2) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET):
Structure:
• Consists of a semiconductor channel (n-type or p-type) separated from a gate
terminal by a thin layer of insulating oxide
Operation:
• When a voltage is applied to the gate, an electric field is created across the
oxide layer, inducing a channel of majority carriers in the semiconductor.
• The strength of the electric field controls the width and conductivity of the
induced channel, thereby regulating the current flow between the source and
drain.

Prof. Sunil Nagare : 9619015411

M.Tech (VJTI) & B.Tech (SPIT)
 Types of FET : MOSFET
Types of MOSFET
• n-channel MOSFET: The channel is made of n-type semiconductor material,
and electrons are the majority carriers.
• p-channel MOSFET: The channel is made of p-type semiconductor material,
and holes are the majority carriers.

Prof. Sunil Nagare : 9619015411

M.Tech (VJTI) & B.Tech (SPIT)
 Types of FET : MOSFET
Types of MOSFET
• n-channel MOSFET: The channel is
made of n-type semiconductor
material, and electrons are the
majority carriers.
• p-channel MOSFET: The channel is
made of p-type semiconductor
material, and holes are the majority
carriers.

Prof. Sunil Nagare : 9619015411

M.Tech (VJTI) & B.Tech (SPIT)
 FET : Field Effect Transistor
Advantages of FETs:
• High input impedance
• Low power consumption
• Fast switching speeds
• Wide range of operating frequencies

Applications of FETs:
• Amplifiers
• Switches
• Digital logic circuits
• Power electronics
Prof. Sunil Nagare : 9619015411
• Sensors
M.Tech (VJTI) & B.Tech (SPIT)
 Application of BJT & FET
• Bipolar Junction Transistors (BJTs) and Field-Effect Transistors (FETs) are
fundamental building blocks in electronic circuits, offering versatile
functionalities like amplification, switching, and oscillation.
BJT as a Amplifier
• In a common emitter configuration, a small
input signal at the base controls a
larger output current at the collector.
• This current gain provides amplification.

Prof. Sunil Nagare : 9619015411

M.Tech (VJTI) & B.Tech (SPIT)
 Application of BJT & FET
FET as a Amplifier
• Similar to the BJT, a small input voltage at the gate of an FET controls a larger
output current at the drain. This voltage-controlled current gain enables
amplification.

Prof. Sunil Nagare : 9619015411

M.Tech (VJTI) & B.Tech (SPIT)
 Application of BJT & FET
BJT as a Switch
• By applying appropriate base current, a BJT can be driven into saturation (fully
on) or cut-off (fully off) states, effectively acting as a switch.

Prof. Sunil Nagare : 9619015411

M.Tech (VJTI) & B.Tech (SPIT)
 Application of BJT & FET
FET as a Switch
• Similarly, by applying a suitable gate voltage,
an FET can be switched between its on and
off states, controlling the flow of current.

Prof. Sunil Nagare : 9619015411

M.Tech (VJTI) & B.Tech (SPIT)
 Application of BJT & FET
BJT as a Oscillator
• A combination of reactive
components (capacitors and
inductors) and a BJT in a
feedback configuration can
generate sustained
oscillations at a specific
frequency.

Prof. Sunil Nagare : 9619015411

M.Tech (VJTI) & B.Tech (SPIT)
 Application of BJT & FET
FET as a Oscillator
• Similar to the BJT oscillator, an FET can be used with reactive components to
create an oscillator circuit, leveraging its voltage-controlled characteristics.

Prof. Sunil Nagare : 9619015411

M.Tech (VJTI) & B.Tech (SPIT)
BEEE : Question Bank of Ch 6
1) Explain Structure & Operation of BJT (Refer Lec 1 & 2)
2) Explain Common Emitter Configuration of BJT (Refer Lec 3)
3) Explain FET with its types (Refer Lec 4)
4) Explain operation of JFET with its types (Refer Lec 4)
5) Explain operation of MOSFET with its types (Refer Lec 5)
6) Explain Application of BJT & FET (Refer Lec 6)

Prof. Sunil Nagare : 9619015411

M.Tech (VJTI) & B.Tech (SPIT)