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Edc Set A

This document is a model exam paper for the Electronic Devices course at Anand Institute of Higher Technology. It includes two parts: Part A consists of 10 short answer questions worth 2 marks each, while Part B contains 5 long answer questions worth 16 marks each. Topics covered include PN junction diodes, transistors, JFET, MOSFET, and various diode types and their characteristics.

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2 views2 pages

Edc Set A

This document is a model exam paper for the Electronic Devices course at Anand Institute of Higher Technology. It includes two parts: Part A consists of 10 short answer questions worth 2 marks each, while Part B contains 5 long answer questions worth 16 marks each. Topics covered include PN junction diodes, transistors, JFET, MOSFET, and various diode types and their characteristics.

Uploaded by

k.lakshmi
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOC, PDF, TXT or read online on Scribd
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REG NO: A

ANAND INSTITUTE OF HIGHER TECHNOLOGY

Department of ECE
MODEL EXAM
Year : I/G&H Date :28.04.17
Sub Code : EC6201 Time : 3hrs
Sub Name : ELECTRONIC DEVICES Max marks: 100

PART A - (10 × 2 = 10 marks)

1. Define diffusion and drift current densities.


2. Compare MOSFET and FET
3. Define Storage time.
4. What is meant by base width modulation?
5. A solar cell is a PN junction device with no voltage directly applied across it. If it is so, how
does a solar cell deliver power to the load?
6. What are the differences between tunnel diode and ordinary PN diode?
7. Draw the energy band diagram of metal and semiconductor before and after conduction is
made.
8. Write down the significance of optocoupler.
9. Define threshold voltage.
10. What is avalanche breakdown?

PART B (5 × 16 = 80 marks)

11. (a) Explain the theory of PN junction diode and derive diode current equation. (16)

Or

(b).Explain and derive current components switching characteristics of PN junction


diode. (16)

12. a)Explain the working of NPN transistor in CE configuration and draw a circuit for
determining input and output characteristics . (16)

Or

(b) Write short notes on

i) Ebers-moll model. (8)


ii) Hybrid-π model . (8)
13 a) i) With the help of neat sketches and characteristics explain operation of JFET. (10)

ii) Define and explain parameters transconductance (gm) ,drain resistance(rd) and
amplification factor µ of a JFET. Establish relation between them. (6)

Or

b) i) Describe the characteristics of MOSFET. (10)

ii) Discuss the concept of dual gate MOSFET. (6)

14. a) i) Draw the structure of a metal-semiconductor junction and explain the energy
band structure before and after contact. (8)

ii) Explain the principle behind the laser diode with a neat sketch. (8)

Or

b) i) What is Schottky diode? Explain the floe of carriers across its junction during
forward and reverse biased conditions with energy band diagrams. (8)

ii) Elaborate the principle of operation of varactor diode and list out its applications. (8)

15 a) Give the construction details of UJT and explain its operation with the help of
equivalent circuits. (16)

Or

b) Write short notes on:


(i) Phototransistor. (5)
(ii) LCD. (5)
(iii) CCD. (6)

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