The document outlines the midterm examination details for the Electronic Devices & Circuits course, including the structure of the exam, types of questions, and marks distribution. It consists of two parts: Part-A with four detailed questions and a second part with multiple-choice questions and fill-in-the-blank items. The exam focuses on various semiconductor devices, their operations, and characteristics.
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EDC BIT PAPER Set 2
The document outlines the midterm examination details for the Electronic Devices & Circuits course, including the structure of the exam, types of questions, and marks distribution. It consists of two parts: Part-A with four detailed questions and a second part with multiple-choice questions and fill-in-the-blank items. The exam focuses on various semiconductor devices, their operations, and characteristics.
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SR24
I-B.Tech., II- Semester, Midterm-II, Jun-2025
Name of the Course: Electronic Devices & Circuits Course code: SR24EC205ES Branch: CSE, AIML, DS , CS Date: -06-2025 Time Alloted: 1:30hr Max. Marks: 20
PART-A: Answer any FOUR Questions.
S.No. QUESTION CO BTL Marks
1. Explain the operations of NPN and PNP transistors? CO3 L1 5
a) Compare the performance of a transistor in different
2. configurations?. CO3 L2, L2 3+2 b) Derive the relationship between α and β?
Explain the four distinct regions of the output characteristics of a
3. CO4 L1 5 JFET.
With the help of suitable diagrams, explain the working of
4. CO4 L3 5 different types of MOSFET.
a) Explain the volt-ampere characteristics of a semiconductor
5. photo diode. CO5 L2 3+2 b) Describe the operation of a Shot key diode. Describe the working principle of a tunnel diode with V-I 6. CO5 L3 5 characteristics.
Bloom’s taxanomy
Level % of Marks
L1- Remembering 44%
L2- Understanding 40%
L3 & L4- Applying and analyzing 16%
I-B.Tech., II- Semester,
Midterm-II, June-2025 SR24 Name of the Course: Electronic Devices & Circuits Course code:S24EC205ES Branch: CSE, AIML, DS, Date: -06-2025 Time Alloted: 20min Max. Marks: 10
1. For a highly doped diode [ ]
a) Zener breakdown is likely to take place b) Avalanche breakdown is likely to take place c) Either a or b is likely to take place d) Neither a or b will take place 2. Which of the following semiconductor device acts like a diode and two resistor [ ] a) SCR b) UJT c) LED d) Both a and b 3. How many terminals does a FET have? [ ] a) 3 b) 2 c) 1 d) 4 4. The LED converts electrical energy to ______________ [ ] a) Heat b) Light c) Solar d) None 5. The drain source voltage at which the drain current becomes nearly constant is called [ ] a) Barrier voltage b) breakdown voltage c) pick-off voltage d) pinch-off voltage 6. For normal operation of BJT, emitter base junction must be ____________ [ ] a) Unbiased b) Forward biased c) Reverse Biased d) None 7. A FET has a [ ] a) Very high input resistance b) very low input resistance c) High connection emitter junction d) forward PN junction 8. The salient feature of tunnel diode is _________________________ characteristics. [ ]
a) Positive resistance b) Negative resistance
c) No resistance d) High resistance
9. The Base of transistor is doped [ ]
a) Heavily b) moderately c) lightly d) None of the above 10. A diode which is used for voltage stabilization is ____. [ ]
a) Tunnel diode b) Schottky Diode
c) Photo diode d) Zener
Fill in the blanks
11. SCR stands for ____________________. 12. The Tunnel diode is also known as __________________ diode. 13. ___________________ is a bipolar device. 14. Field effect transistor has _________ Junctions. 15. ___________ Configuration of BJT has higher current gain. SR24 16. PNP transistor is made up of ________________ 17. JFET can be used as _______________________ resistor 18. Expression for current gain of common emitter configuration is _____________. 19. Zener breakdown needs relatively ________ electric field compared to Avalanche breakdown. 20. JFET is a _______________ controlled device.