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EDC BIT PAPER Set 2

The document outlines the midterm examination details for the Electronic Devices & Circuits course, including the structure of the exam, types of questions, and marks distribution. It consists of two parts: Part-A with four detailed questions and a second part with multiple-choice questions and fill-in-the-blank items. The exam focuses on various semiconductor devices, their operations, and characteristics.

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0% found this document useful (0 votes)
2 views3 pages

EDC BIT PAPER Set 2

The document outlines the midterm examination details for the Electronic Devices & Circuits course, including the structure of the exam, types of questions, and marks distribution. It consists of two parts: Part-A with four detailed questions and a second part with multiple-choice questions and fill-in-the-blank items. The exam focuses on various semiconductor devices, their operations, and characteristics.

Uploaded by

yyo362114
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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SR24

I-B.Tech., II- Semester, Midterm-II, Jun-2025


Name of the Course: Electronic Devices & Circuits Course code: SR24EC205ES
Branch: CSE, AIML, DS , CS
Date: -06-2025 Time Alloted: 1:30hr Max. Marks: 20

PART-A: Answer any FOUR Questions.


S.No. QUESTION CO BTL Marks

1. Explain the operations of NPN and PNP transistors? CO3 L1 5

a) Compare the performance of a transistor in different


2. configurations?. CO3 L2, L2 3+2
b) Derive the relationship between α and β?

Explain the four distinct regions of the output characteristics of a


3. CO4 L1 5
JFET.

With the help of suitable diagrams, explain the working of


4. CO4 L3 5
different types of MOSFET.

a) Explain the volt-ampere characteristics of a semiconductor


5. photo diode.
CO5 L2 3+2
b) Describe the operation of a Shot key diode.
Describe the working principle of a tunnel diode with V-I
6. CO5 L3 5
characteristics.

Bloom’s taxanomy

Level % of Marks

L1- Remembering 44%

L2- Understanding 40%

L3 & L4- Applying and analyzing 16%

I-B.Tech., II- Semester,


Midterm-II, June-2025
SR24
Name of the Course: Electronic Devices & Circuits Course code:S24EC205ES
Branch: CSE, AIML, DS,
Date: -06-2025 Time Alloted: 20min Max. Marks: 10

1. For a highly doped diode [ ]


a) Zener breakdown is likely to take place
b) Avalanche breakdown is likely to take place
c) Either a or b is likely to take place
d) Neither a or b will take place
2. Which of the following semiconductor device acts like a diode and two resistor [ ]
a) SCR b) UJT c) LED d) Both a and b
3. How many terminals does a FET have? [ ]
a) 3 b) 2 c) 1 d) 4
4. The LED converts electrical energy to ______________ [ ]
a) Heat b) Light c) Solar d) None
5. The drain source voltage at which the drain current becomes nearly constant is called [ ]
a) Barrier voltage b) breakdown voltage c) pick-off voltage d) pinch-off voltage
6. For normal operation of BJT, emitter base junction must be ____________ [ ]
a) Unbiased b) Forward biased c) Reverse Biased d) None
7. A FET has a [ ]
a) Very high input resistance b) very low input resistance
c) High connection emitter junction d) forward PN junction
8. The salient feature of tunnel diode is _________________________ characteristics. [ ]

a) Positive resistance b) Negative resistance


c) No resistance d) High resistance

9. The Base of transistor is doped [ ]


a) Heavily b) moderately c) lightly d) None of the above
10. A diode which is used for voltage stabilization is ____. [ ]

a) Tunnel diode b) Schottky Diode

c) Photo diode d) Zener

Fill in the blanks


11. SCR stands for ____________________.
12. The Tunnel diode is also known as __________________ diode.
13. ___________________ is a bipolar device.
14. Field effect transistor has _________ Junctions.
15. ___________ Configuration of BJT has higher current gain.
SR24
16. PNP transistor is made up of ________________
17. JFET can be used as _______________________ resistor
18. Expression for current gain of common emitter configuration is _____________.
19. Zener breakdown needs relatively ________ electric field compared to Avalanche
breakdown.
20. JFET is a _______________ controlled device.

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