DISCRETE SEMICONDUCTORS

DATA SHEET

BLW29 VHF power transistor

Product specication August 1986

Philips Semiconductors

Product specication

VHF power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B or C operated mobile transmitters with a nominal supply voltage of 13,5 V. Because of the high gain and excellent power handling capability, the transistor is especially suited for design of wide-band and semi-wide-band v.h.f. amplifiers. Together with a BFQ42 driver stage, the chain can deliver 15 W with a maximum drive power of 120 mW at 175 MHz. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V. It has a 3/8" capstan envelope with a ceramic cap. All leads are isolated from the stud.

BLW29

QUICK REFERENCE DATA R.F. performance up to Th = 25 C MODE OF OPERATION c.w. class-B c.w. class-B VCE V 13,5 12,5 f MHz 175 175 PL W 15 15 Gp dB > 10 typ. 10, 5 % > 60 typ. 67 zi 1,3 + j0,68 YL mS 180 j54

PIN CONFIGURATION

PINNING - SOT120 PIN DESCRIPTION collector emitter base emitter

halfpage

1 2 3

3
handbook, halfpage

MBB012

2
MSB056

Fig.1 Simplified outline and symbol.

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.

August 1986

Philips Semiconductors

Product specication

VHF power transistor

RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (average) Collector current (peak value); f > 1 MHz R.F. power dissipation (f > 1 MHz); Tmb = 25 C Storage temperature Operating junction temperature VCESM VCEO VEBO IC(AV) ICM Prf Tstg Tj max. max. max. max. max. max. max.

BLW29

36 V 18 V 4 V 2,75 A 8 A 53 W 200 C

65 to + 150 C

MGP414

handbook, halfpage

10

handbook, halfpage

60

MGP415

IC (A) Th = 70 C 1 Tmb = 25 C

Prf (W) 40

short-time operation during mismatch continuous r.f. operation derate by 0.3 W/K continuous d.c. operation derate by 0.25 W/K

20

101 1 10 VCE (V) 102

0 0 50 Th (C) 100

Fig.2 D.C. SOAR.

Fig.3

R.F. power dissipation; VCE 16,5 V; f 1 MHz.

THERMAL RESISTANCE (dissipation = 15 W; Tmb = 77 C, i.e. Th = 70 C) From junction to mounting base (d.c. dissipation) From junction to mounting base (r.f. dissipation) From mounting base to heatsink Rth j-mb(dc) Rth j-mb(rf) Rth mb-h = = = 3,7 K/W 3,05 K/W 0,45 K/W

August 1986

Philips Semiconductors

Product specication

VHF power transistor

CHARACTERISTICS Tj = 25 C Collector-emitter breakdown voltage VBE = 0; IC = 15 mA Collector-emitter breakdown voltage open base; IC = 100 mA Emitter-base breakdown voltage open collector; IE = 5 mA Collector cut-off current VBE = 0; VCE = 18 V Second breakdown energy; L = 25 mH; f = 50 Hz open base RBE = 10 D.C. current gain(1) hFE typ. IC = 1,75 A; VCE = 5 V Collector-emitter saturation voltage(1) IC = 5 A; IB = 1 A Transition frequency at f = 100 MHz(1) IE = 1,75 A; VCB = 13,5 V IE = 5 A; VCB = 13,5 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 13,5 V Feedback capacitance at f = 1 MHz IC = 100 mA; VCE = 13,5 V Collector-stud capacitance Note 1. Measured under pulse conditions: tp 200 s; 0,02. Cre Ccs typ. typ. Cc typ. fT fT typ. typ. VCEsat typ. ESBO ESBR > > ICES < V(BR)EBO > V(BR)CEO > V(BR) CES >

BLW29

36 V 18 V 4 V 5 mA 4 mJ 4 mJ 40 10 to 80 1,5 V 900 MHz 825 MHz 43 pF 27 pF 2 pF

August 1986

Philips Semiconductors

Product specication

VHF power transistor

BLW29

handbook, halfpage

60

MGP416

handbook, halfpage

150

MGP417

hFE

VCE = 13.5 V

Cc (pF) 100

40

5V

typ 20 50

0 0 5 IC (A) 10

0 0 10 VCB (V) 20

Fig.4 Typical values; Tj = 25 C.

Fig.5 IE = Ie = 0; f = 1 MHz; Tj = 25 C.

handbook, full pagewidth

1500

MGP418

fT (MHz)

1000 typ

500

0 0 2 4 6 8 IE (A) 10

Fig.6 VCB = 13,5 V; f = 100 MHz; Tj = 25 C.

August 1986

Philips Semiconductors

Product specication

VHF power transistor

APPLICATION INFORMATION R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); Th = 25 C f (MHz) 175 175 VCE (V) 13,5 12,5 PL (W) 15 15 PS (W) < 1,5 typ. 1,34 Gp (dB) > 10 typ. 10,5 IC (A) < 1,85 typ. 1,8 (%) > 60 typ. 67 zi () 1,3 + j0,68

BLW29

YL(mS) 180 j54

handbook, full pagewidth

C3a C1 50 C2 L1 L3 C3b T.U.T.

L4

L7

C6 50 C7

L5 C4 C5 R1 L2 R2

L6
MGP419

+VCC

Fig.7 Test circuit; c.w. class-B.

List of components: C1 C2 C4 C5 L1 L2 L3 L5 L7 R1 = = = = = = = = = = 2,5 to 20 pF lm dielectric trimmer (cat. no. 2222 809 07004) C6 = C7 = 4 to 40 pF lm dielectric trimmer (cat. no. 2222 809 07008) C3b = 47 pF ceramic capacitor (500 V) 1 nF ceramic capacitor 100 nF polyester capacitor
1 2

C3a =

turn Cu wire (1,6 mm); int. dia. 6,0 mm; leads 2 5 mm

L6 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L4 = strip (12 mm 6 mm); taps for C3a and C3b at 5 mm from transistor 412 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 6,0 mm; leads 2 5 mm 2 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 6,0 mm; leads 2 5 mm R2 = 10 carbon resistor

L3 and L4 are strips on a double Cu-clad printed-circuit board with epoxy bre-glass dielectric, thickness 1/16".

Component layout and printed-circuit board for 175 MHz test circuit are shown in Fig.8.

August 1986

Philips Semiconductors

Product specication

VHF power transistor

BLW29

150
handbook, full pagewidth

72

L2 C4

L6 +VCC

R1 strip C1 C2 L1 C3a L3 L4

C5

R2

L5 C6 C7 L7

C3b

rivet

MGP420

Fig.8 Component layout and printed-circuit board for 175 MHz test circuit.

The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu straps are used for a direct contact between upper and lower sheets.

August 1986

Philips Semiconductors

Product specication

VHF power transistor

BLW29

handbook, halfpage

30

MGP421

MGP422

handbook, halfpage

25

Gp PL (W) 20 15 70 C 10 10 70 C 5 Th = 25 C (dB) 20 Gp Th = 25 C

125 (%) 100

75

Th = 70 C 25 C 50

25

0 0 VCE = 13,5 V; VCE = 12, 5 V 2 PS (W) 4

0 0 VCE = 13,5 V; VCE = 12, 5 V 10 20 PL (W) 30

Fig.9 Typical values; f = 175 MHz. .

Fig.10 Typical values; f = 175 MHz.

handbook, halfpage

25

MGP423

PLnom (W) (VSWR = 1) 20 VSWR = 5

The transistor has been developed for use with unstabilized supply voltages. As the output power and drive power increase with the supply voltage, the nominal output power must be derated in accordance with the graph for safe operation at supply voltages other than the nominal. The graph shows the permissible output power under nominal conditions (VSWR = 1), as a function of the expected supply over-voltage ratio with VSWR as parameter. The graph applies to the situation in which the drive (PS/PSnom) increases linearly with supply over-voltage ratio.

15

10 20 50

PS PSnom 10 1 1.1 1.2 VCE VCEnom Th = 70 C; Rth mb-h = 0,45 K/W; VCEnom = 13,5 V or 12,5 V; PS = PSnom at VCEnom and VSWR = 1 1.3

OPERATING NOTE Below 70 MHz a base-emitter resistor of 10 is recommended to avoid oscillation. This resistor must be effective for r.f. only.

Fig.11 R.F. SOAR (short-time operation during mismatch); f = 175 MHz;

August 1986

Philips Semiconductors

Product specication

VHF power transistor

BLW29

handbook, halfpage

10

MGP424

handbook, halfpage

7.5

MGP425

CL RL RL

0 CL (pF) 100

ri, xi () 5 ri xi ri 0 xi

RL () 5

2.5

200

CL 5 0 0 250 f (MHz) 500 0 250 f (MHz) 300 500

Typical values; VCE = 13,5 V; PL = 15 W; Th = 25 C.

Typical values; VCE = 13,5 V; PL = 15 W; Th = 25 C.

Fig.12

Fig.13

handbook, halfpage

30

MGP426

Gp (dB) 20

10

0 0 250 f (MHz) 500

Typical values; VCE = 13,5 V; PL = 15 W; Th = 25 C.

Fig.14

August 1986

Philips Semiconductors

Product specication

VHF power transistor

PACKAGE OUTLINE Studded ceramic package; 4 leads
D

BLW29

SOT120A

A Q c

N1 N

D1 D2

A w1 M A M W

N3 X H b detail X M1

4 L

3 H 1

5 scale

10 mm

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm A 5.97 4.74 b 5.90 5.48 c 0.18 0.14 D 9.73 9.47 D1 8.39 8.12 D2 9.66 9.39 H 27.44 25.78 L 9.00 8.00 M 3.41 2.92 M1 1.66 1.39 N 12.83 11.17 N1 1.60 0.00 N3 3.31 2.54 0.130 0.100 Q 4.35 3.98 0.171 0.157 W w1 0.38 8-32 UNC 0.015

inches 0.283 0.248

0.232 0.007 0.216 0.004

0.383 0.330 0.380 1.080 0.373 0.320 0.370 1.015

0.354 0.134 0.315 0.115

0.065 0.505 0.063 0.055 0.440 0.000

OUTLINE VERSION SOT120A

REFERENCES IEC JEDEC EIAJ

EUROPEAN PROJECTION

ISSUE DATE 97-06-28

August 1986

10

Philips Semiconductors

Product specication

VHF power transistor

DEFINITIONS Data Sheet Status Objective specication Preliminary specication Product specication Limiting values

BLW29

This data sheet contains target or goal specications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains nal product specications.

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specication is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specication. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

August 1986

11

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