An Advanced Extended Phase Shift Modulation

Strategy of Daul Active Bridge Converter

Considering Magnetizing Inductance
IECON 2021 - 47th Annual Conference of the IEEE Industrial Electronics Society | 978-1-6654-3554-3/21/$31.00 ©2021 IEEE | DOI: 10.1109/IECON48115.2021.9589305

Yicong Cai, Chunyang Gu, Jiajun Yang, Jing Li, Giampaolo Buticchi, He Zhang
Key Laboratory of More Electric Aircraft Technology of Zhejiang Province, University of Nottingham Ningbo China, Ningbo
[email protected]

Abstract——Employing high frequency (HF) transformer in inductance and resistance in the core could be represented as
DC-DC converter is a popular strategy in power electronic 𝐿 and 𝑅 . While 𝑛: 1 is the turn ratio of the transformer.
industry. Equivalent circuit model of transformer in HF Dual
R1 Ls1 Ls2 R2
Active Bridge (DAB) converters is investigated along with its
impact on power transfer characteristic for Single Phase Shift
(SPS) and Extended Phase Shift (EPS) modulation. Equivalent v1 Rm Lm v2
branches of magnetizing inductance allocated in primary and
secondary side can inject the inductive current at switching n:1
instants to extend Zero Voltage Switching (ZVS) range. ZVS
maps are proposed. Based on the power transfer characteristics Fig. 2. Equivalent circuit of a practical transformer
and ZVS maps, an Advanced Extended Phase Shift (AEPS)
modulation method with modified coupling relationship for Generalized equivalent circuit of a practical transformer is
phase shift is proposed to reduce the current stress and improve described as Fig. 2. For majority of modulation methods
the voltage utilization. Finally, AEPS modulation is applied in LF DAB converters, Single-Phase-Shift (SPS) and
implemented in PLECS simulations to verify the analyzation Extended-Phase-Shift (EPS) modulation for example, value
presented. of magnetizing inductance is assumed to be infinite [7, 8].
With this hypothesis, resultant reactance is dominated by the
I. INTRODUCTION leakage inductances and the resistances in series connection,
while magnetizing branch is neglected. As inductive
In power electronic area, development of high power- reactance is proportional to the switching frequency,
density DC-DC converter has drawn great amount of resistance will be less significant with the increasement of
attention in recent years. Dual Active Bridge (DAB) frequency. For DAB converters operating at high switching
converter is one of the popular bidirectional power transfer frequencies, saturation of transformer could lead to reduction
solutions [1, 2]. The topology of a conventional DAB of magnetizing inductance. This phenomenon would have
converter is shown in Fig. 1. This attractive topology has low impact on power transfer and reversely affect the converter
devices stress, employing transformer leakage inductances as control. In addition, ZVS conditions would be changed.
the main energy transfer elements and equipped with the
capability of Zero Voltage Switching (ZVS) [3-5]. To In this paper, T-shaped traditional transformer structure is
improve the performance, replacing traditional Low- replaced by the π-shaped equivalent circuit to investigate the
Frequency (LF) transformer with High-Frequency (HF) impact of magnetizing inductance on soft switching
transformer has been considered as a new-generation power conditions and power characteristic. First, average power
converter design option. As it could provide the superiority transfer characteristic is redetermined for SPS modulation to
of reduction in volume, weight and cost [6]. verify the necessity of including magnetizing inductance in
S1 S3 Q1 Q3
power calculation. Then, magnetizing inductance could
extend the ZVS range is evaluated, further with reduction in
Ls
magnetizing inductance could provide loosen freedom in soft
V1 C1 C2 V2
switching. Extend this analysis to EPS modulation. From the
n:1 calculation of soft switching range, ZVS covered duty ratio
S2 S4 Q2 Q4
maps are established. Based on the maps, an advanced EPS
modulation mothed has been proposed to improve the system
voltage utilization and reduce the current stress. Finally,
Fig. 1. Topology of a DAB converter simulation in PLECS is performed to investigate the
performance of proposed modulation and validate the
For practical transformer in the DAB converter, leakage supposed analysis. A DAB converter plant with adjustable
inductance in primary and secondary windings could be leakage inductances HF transformer has been constructed for
donated as 𝐿 and 𝐿 . Both primary and secondary winding further experimental verification.
processes inner resistance, donated as 𝑅 and 𝑅 .
Permeability of the core is not infinite, magnetizing II. EQUIVALENT CIRCUIT MODEL CONSIDERING EFFECT OF
MAGNETIZING INDUCTANCE

This work is supported by the Key International Cooperation of National

Assume the switching frequency is between 50kHz and
Natural Science Foundation of China under Grant 51920105011. 100kHz where reactance is dominated by the inductance and
This work was supported by the Zhejiang Natural Science Foundation
under Grant LY19E070002 and the Zhejiang Provincial Department of
Human Resources and Social Security under Grant QJD1803013.

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resistance could be neglected. Fig. 3(a) shows the T-shaped 1
transformer equivalent circuit. This equivalent circuit could 0.98
be transferred to π-shaped circuit shown in Fig. 3(b) to

Power (pu)
simplify the ZVS analysis. 0.96

0.94 SPS with Lm ignored

1 Ls1 Ls2 2 1 L12 2
0.92 SPS with Lm considered
0.9
Lm

L13

L23
0 50 100 150 200
M
3 3 3
Fig. 4. Comparison of average power transfer with and without considering
existence of 𝐿 when 𝑎 = 5
Fig. 3. (a) T-shaped transformer equivalent circuit (b) π-shaped equivalent
circuit
Reduction of 𝑀 and 𝑎 could lead to more significant error.
Define 𝑀 as the ratio between magnetizing inductance and Hence, it is necessary to include magnetizing inductance in
primary side leakage inductance, 𝐿 = 𝑀𝐿 . To simplify power calculation.
the calculation, define 𝐿 = 𝑎𝐿 with 𝑎 ∈ (0, ∞) .
𝐿 also provides expanded range in soft switching.
Components in π-shaped equivalent circuit can be
Assuming ideal power devices and transformers without
represented as (1) with 𝑀 and 𝑎. considering the device parasitic capacitance. Waveforms of
𝐿 𝐿
+𝐿 𝐿 +𝐿 𝐿 (𝑎𝑀 + 𝑀 + 1) SPS modulated DAB system considering 𝐿 in Fig. 5.
𝐿 = = 𝐿
𝐿 𝑎𝑀
𝐿 𝐿 +𝐿 𝐿 +𝐿 𝐿 vh1 t
𝐿 = = (𝑎𝑀 + 𝑀 + 1)𝐿 1
𝐿
vh2 t
𝐿 𝐿 +𝐿 𝐿 +𝐿 𝐿 (𝑎𝑀 + 𝑀 + 1)
𝐿 = = 𝐿
𝐿 𝑎 vL12 t
Power transfer between two nodes solely related to the 𝐿
branch. 𝐿 and 𝐿 affect the voltage and current of primary iL12 t
and secondary H-bridge individually. They inject inductive
current to modify the resultant current at switching instants iL13 t
to provide extension in ZVS range. A similar strategy of
reducing magnetizing inductance in HF transformer has been
proved as an effective hardware design solution to improve iL23 t
the system efficiency of LLC converter [9, 10]. t0 t1 t2 t3

III. POWER CHARATERISTICS AND ZVS FOR SPS

MODULATION CONSIDERING MAGNETIZING INDUCTANCE Fig. 5. Waveforms of SPS modulated DAB converter with 𝐿 considered

For ideal SPS modulated DAB converter, average power Soft switching in DAB system refers to the ZVS ON,
transfer characteristic is (2) [8]. which requires current flow upon the switching transistor is
negative at the device turned ON instant. [5, 11, 12]. For
𝑛𝑉 𝑉 𝐷 (1 − 𝐷 ) DAB converter, soft-switching conditions is (4).
𝑃= 2
2𝑓 𝐿 𝑖 (𝑡 ) < 0
4
where 𝑛 is turn ratio, 𝑉 and 𝑉 is the voltage at primary and 𝑖 (𝑡 ) > 0
secondary node, 𝑓 is the switching frequency, 𝐿 is the
Define the DC voltage conversion ratio 𝑘 as 𝑘 = 𝑛𝑉 /𝑉 .
resultant leakage inductance, 𝐿 = (1 + )𝐿 and 𝐷 ∈ Initially suppose input voltage 𝑉 is greater than output 𝑉 ,
[−1,1] is outer phase shift between two H-bridges. Substitute 0 < 𝑘 ≤ 1. For reverse power conversion, can be applied
leakage inductance by 𝐿 gives the power characteristic (3)
to substitute 𝑘. Leakage inductance current neglecting 𝐿 at
for π-shaped DAB converter model.
𝑡 instant is (5).
𝑛𝑉 𝑉 𝐷 (1 − 𝐷 )
𝑃= 3 𝑉 (2𝑘𝐷 + 1 − 𝑘)
(𝑎𝑀 + 𝑀 + 1) 𝑖 (𝑡 ) = − 5
2𝑓 𝐿 4𝑓 𝐿
𝑎𝑀
𝑀 is considered as infinite for low frequency conditions. Substitute 𝐿 with 𝐿 donates the current passing though
Decrement of 𝑀 could lead to error in power calculation. 𝐿 for π-shaped equivalent circuit. Current waveforms of
Plot the calculated power with ideal SPS modulation and SPS both 𝐿 and 𝐿 are triangle waves. Assume power is
with 𝐿 included. Select ideal SPS modulation power transmitted from primary to secondary side with 𝐷 ∈ (0,1],
transfer value as the base power when 𝑎 = 5 , plot the resultant current (6) consists of 𝑖 and 𝑖 should be
characteristic between 𝑀 and power in Fig .4. For example, negative.
if value of 𝑀 equals to 5, power transfer in practical is 96%
𝑉 (2𝑘𝐷 + 1 − 𝑘) 𝑉
of the calculation result from ideal SPS modulation. 𝑖 (𝑡 ) = − − <0 6
4𝑓 𝐿 4𝑓 𝐿

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 For SPS modulation, 𝐷 is the only control variable of Fig. 6. (a) Waveforms of EPS modulated DAB when 0 < 𝐷 ≤
power transfer. Present 𝐷 with the function of 𝑘 , 𝑎 and 𝑀 considering 𝐿 (b) Waveforms of EPS modulated DAB when <𝐷 ≤
with 𝑀 ∈ (1, ∞). 1 considering 𝐿

1 1 1 Assume power is transmitted from primary to secondary

𝐷 > − − 7
2 2𝑘 2𝑘𝑎𝑀 node, 𝐷 ∈ (0,1] . If 𝐷 ≤ , voltage rising edge of
As − is negative, arbitrary value of 𝐷 could achieve (8). secondary bridge will lead primary as shown in Fig. 6(a).
Current of 𝐿 at instant 𝑡 is (12).
Repeat the same procedure. Resultant current (8) at 𝑡 should
be positive. 𝑉
𝑖 (𝑡 ) = (2𝑘𝐷 − 𝑘𝐷 + 𝐷 + 𝑘 − 1) 12
𝑉 (𝑘 − 1 + 2𝐷 ) 𝑘𝑉 4𝑓 𝐿
𝑖 (𝑡 ) = + >0 8
4𝑓 𝐿 4𝑓 𝐿 When 𝐷 is applied, current of 𝑖 becomes a trapezoidal
wave. While current of 𝑖 is still a triangle wave.
1 𝑘 𝑘
𝐷 > − − 9 𝑉 (1 − 𝐷 )
2 2 2𝑀
𝑖 (𝑡 ) = − 13
Substitute 𝐷 with −𝐷 provides the remained ZVS 4𝑓 𝐿
restriction when power is transferred reversely. Overall ZVS Resultant current should satisfy (5). Use 𝐷 to control
requirement for 𝐷 considering 𝐿 can be concluded as (10). power while 𝐷 is adjusted to meet the ZVS requirement. For
1 𝑘 𝑘 𝑀 ideal EPS modulation, ZVS requirement is (14).
− − < |𝐷 | < 1, when 0 < 𝑘 < 10
2 2 2𝑀 𝑀+1 2𝑘
1−𝑘 <𝐷 <1− 𝐷 14
𝑀 1−𝑘
0 < |𝐷 | < 1, when <𝑘<1
𝑀+1 Considering the existence of 𝐿 , ZVS condition is
For ideal SPS modulation, ZVS condition is (11). determined as (15).

1 𝑘 𝑘 2𝑘
− < |𝐷 | < 1 11 1−𝑘− <𝐷 <1− 𝐷 15
𝑀 1
2 2 1−𝑘+
𝑎𝑀
Compare (11) and (12), existence of the magnetizing Complete the ZVS condition with and without the
inductor could broaden the soft switching range. As
equivalent branches of 𝐿 in primary and secondary side consideration of 𝐿 when < 𝐷 ≤ 1.
modify the resultant at switching instant current by injecting
inductive current. Smaller ratio 𝑀 would provide wider 2𝑘(1 − 𝐷 )
𝐷 <1−
range of eligible 𝐷 for soft switching and further contribute 1+𝑘
to the ZVS. 2𝑘(1 − 𝐷 ) 1 𝑘 𝑘
𝐷 <1− ,𝐷 > − − 16
IV. IMPACT OF MAGNETIZING INDUCTANCE ON POWER 1 2 2 2𝑀
1+𝑘+
CHARATERISTIC FOR EPS MODULATION AND ZVS 𝑎𝑀

To promote system efficiency and extend ZVS operating Based on the result in (15) and (16). Establish the
range, EPS modulation has been proposed [13, 14]. EPS Cartesian coordinate system with 𝐷 and 𝐷 as reference
modulations fix the inner phase shift of secondary bridge 𝐷 frames. Aera satisfying ZVS is shaded in Fig. 7(a), (b).
as 0. While outer phase shift 𝐷 and primary inner phase shift Crossing points on the 𝐷 = 2𝐷 : A = ,1−𝑘 , B =
𝐷 are two controllable degrees of freedom. ( − , 1 − 𝑘 − ) and C = ( − ,1 − ).
Define 𝐷 ∈ [−1,1] as the phase shift between midpoint of
ON time voltage and 𝐷 ∈ [0,1). For EPS modulation there
are two possible waveforms shown in Fig. 6, distinguished
with the relationship between 𝐷 and 𝐷 [13, 15].
D0Th D0Th
D1Th D1Th

vh1 t vh1 t

vh2 t vh2 t

Fig. 7. (a) ZVS area of EPS modulation with 𝐿 neglected (b) ZVS area
vL12 t
vL12 t considering 𝐿

Comparing two maps, existence of 𝐿 has expanded the

iL12 t iL12 t range of 𝐷 and 𝐷 available for ZVS. Smaller 𝑀 results in
point B and C positioned further away from A , providing
iL13 t
iL13 t extended soft switching freedoms.
iL23 t
iL23 t

t0*t0 t1 t2t3 t0 t1 t2 t3 t4

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V. AN ADVANCED EPS MODULAATION FOR HF DAB ⎧ 𝑛𝑉 𝑉 𝑘 1 𝑘 𝑘
𝑘+ 𝐷 𝑤ℎ𝑒𝑛 0 ≤ 𝐷 ≤ − −
CONSIDERING MAGNETIZING INDUCTANCE ⎪
⎪ 2𝑓
(𝑎𝑀 + 𝑀 + 1)
𝐿
𝑀 2 2 2𝑀
𝑎𝑀
𝑃= 𝑘
⎨ 𝑛𝑉 𝑉 1−𝑘− 1 𝑘 𝑘 1
Maximum average power transfer occurs at 𝐷 = ±0.5 , ⎪
⎪ 𝐷 (1 − 𝐷 ) − 𝑀 𝑤ℎ𝑒𝑛 − − <𝐷 <
(𝑎𝑀 + 𝑀 + 1) 4 2 2 2𝑀 2
𝐷 ∈ [0,0.5] can cover all the power transfer possibilities in ⎩2𝑓 𝑎𝑀
𝐿

forward direction. Based on the ZVS maps, an Advanced 20

Extended Phase Shift (AEPS) modulation method (17) is
proposed to improve the ZVS condition, voltage utilization Plot the power verses 𝐷 curve of two modulation methods
and reduce the current stress. with 𝑘 = 0.55 , 𝑀 = 5,20 and 100 . Gap between two
modulation methods is caused by 𝐷 . With the existence of
𝐷 ∈ [0,0.5] 𝐿 , proposed AEPS method demands reduced 𝐷 to achieve
⎧ 𝑀 ZVS for the same power demanding. As both modulation
⎪
⎪ 𝐷 = 0 when ≤𝑘<1 methods have 100% secondary side voltage utilization,
𝑀+1
𝑘 𝑀 17 reduced 𝐷 in AEPS modulation could provide improved
⎨𝐷 = 1 − 𝑘 − when 0 < 𝑘 < system voltage utilization.
⎪ 𝑀 𝑀 +1
⎪ 𝐷 =0 0.25

⎩
0.2
𝐷 can be calculated from the reverse function of average
power for closed loop control purpose.
This coupling characteristic is sketched as a horizontal line 0.15

passing through point B. For EPS modulation neglecting the

existence of 𝐿 , a likewise Modified Extended Phase Shift 0.1
(MEPS) modulation (that is 𝐷 = 1 − 𝑘 ) in (18) could be
analyzed to make comparisons [13]. Plot these two EPS MEPS
AEPS when M=200
0.05
modulation methods in ZVS map as Fig. 8(a), (b). AEPS when M=20
AEPS when M=5

𝐷 ∈ [0,0.5] 0
0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5
𝐷 =1−𝑘 18 D0
𝐷 =0
Fig. 9. Average power verses 𝐷 of AEPS and MEPS

From Fig. 9, when ratio M is small, AEPS would provide

more accuracy in power transfer capability estimation.
Besides, reduction in 𝐷 and 𝐷 could reduce the current
stress, which is verified in the next section.
VI. VERIFICATION OF PROPOSED AEPS MODULATION
STRTERGY
Establish the switching model in PLECS to compare the
Fig. 8. (a) MEPS modulation (b) AEPS modulation voltage and current performance of two modulation methods.
Express the average power equation of EPS modulation
TABLE I. CIRCUIT PARAMETERS IN PLECS MODEL
according to General-Phase-Shift (GPS) control theory [16]
with 𝐿 replaced by 𝐿 to include the existence of 𝐿 . For Specifications Symbol Value
MEPS with 𝐷 = 1 − 𝑘, power function is (19). Input DC voltage 𝑉 650 V
Output DC voltage 𝑉 455 V
𝑛𝑉 𝑉 1 𝑘 Transformer turn ratio 𝑛 1:1
⎧ 𝑘𝐷 𝑤ℎ𝑒𝑛 0 ≤ 𝐷 ≤ − Primary bridge leakage inductance 𝐿 100 μH
⎪ (𝑎𝑀 + 𝑀 + 1) 2 2
2𝑓 𝐿 Secondary bridge leakage inductance 𝐿 80 μH
𝑃= 𝑎𝑀
⎨ 𝑛𝑉 𝑉 (1 − 𝑘) 1 𝑘 1 MOSFET-on resistance 𝑅 _ 80 mΩ
⎪ (𝑎𝑀 + 𝑀 + 1) 𝐷 (1 − 𝐷 ) − 𝑤ℎ𝑒𝑛 − < 𝐷 <
4 2 2 2 Diode-on resistance 𝑅 _ 40 mΩ
⎩ 2𝑓 𝐿
𝑎𝑀 Switching frequency 𝑓 50 kHz
19 Dead time 𝑡 0.1 μs
For AEPS modulation, average power calculation should be First verify the impact of magnetizing inductance on power
classified into two branches. transfer for SPS modulation. Fig. 10 shows the result of
average power transferred when 𝑀 = 5, 20 and 100.
If 1 − 𝑘 − < 0 , 𝐷 equals to zero, modulation operates Reduction of 𝑀 could bring more significant error in power
as SPS modulation in (3). estimation and modulate algorithm reversely. Thus,
considering 𝐿 in HF DAB is proved to be necessary.
If 0 < 1 − 𝑘 − < 1 , coupling curve is positioned in
positive axis. Power equation under this condition is (20).

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 5000 Primary bridge voltage
500
Secondary bridge voltage

Power (W) 4000 0

-500
3000
SPS with M=5
2000 SPS with M=20 5
Primary bridge current
Secondary bridge current
SPS with M=100 0
1000
-5

0 3.689 3.690 3.691 3.692 3.693 3.694 3.695 3.696 × 1e-2

I II
0 0.1 0.2 D0 0.3 0.4 0.5 t (s)

Fig. 10. Power of SPS modulation with 𝑀 = 5, 20 and 100 500 Primary bridge voltage
Secondary bridge voltage

Extension of ZVS range could be verified by observing 0

instantaneous voltage and current at switching moments. For -500

ideal SPS modulation, theoretical ZVS boundary is 𝐷 =

0.15 when 𝑀 = 5 . With the assistant of 𝐿 , range is 10 Primary bridge current
Secondary bridge current

expanded and for 𝐷 = 0.1 in Fig. 11, ZVS is realized. 0

-10

3.637 3.638 3.639 3.640 3.641 3.642 3.643 3.644 × 1e-2

500 Primary bridge voltage I II
t (s)
Secondary bridge voltage
0
Fig. 14. (a) Voltage and Current waveform (1000W) (b) Voltage and Current
-500 waveform (3200W)

10
Primary bridge current TABLE II. INNER AND OUTER PHASE SHIFT OF TWO MODULATIONS
Secondary bridge current
0 MEPS modulation AEPS modulation
𝑃 = 1000𝑊 𝑃 = 3200𝑊 𝑃 = 1000𝑊 𝑃 = 3200𝑊
-10
3.864 3.866 3.868 3.870 × 1e-2 𝐷 𝐷 𝐷 𝐷 𝐷 𝐷 𝐷 𝐷
t (s) = 0.0947 = 0.3 = 0.376 = 0.3 = 0.079 = 0.16 = 0.32 = 0.16

Fig. 11. Voltage and Current of Primary and Secondary bridge for SPS
modulation with 𝐿 considered (𝐷 = 0.1) Determine the corresponding 𝐷 and 𝐷 for two
modulation methods. As the 𝐷 in Table II is the lowest
Repeat the same procedure for AEPS modulation. Fig. 12 boundary satisfying ZVS requirement, reduced 𝐷 in
shows the power verses 𝐷 for two modulation methods, proposed modified modulation proves an extended control
which is confirmed with the theoretical result in Fig. 9. freedom available for soft switching. In addition, when 1 −
4000
𝑘 − < 0, AEPS is under SPS mode with 𝐷 fixed to zero,
3500 whose 𝐷 is likewise less than MEPS modulation. Hence, for
3000 the entire power transfer range, AEPS modulation demands
Power (W)

2500 smaller 𝐷 . Promising a preferable voltage utilization.

2000
1500
1000 MEPS
500 AEPS
0
0 0.1 0.2 D0 0.3 0.4 0.5

Fig. 12. Power of two advanced EPS modulation methods with M=5

Examine the ZVS capability for AEPS modulation.

Boundary of soft switching for MEPS modulation is 𝐷 =
0.15 when 𝑀 = 5. While AEPS could extend this limitation
down to 𝐷 = 0.08 as shown in Fig 13. Power conditions
from two branches are examined available for soft switching
in Fig. 14.

Fig. 15. (a) Current waveforms of MEPS (3200W) (b) Current waveforms
of AEPS (3200W)
Fig. 13. Voltage and Current of Primary and Secondary bridge (𝐷 = 0.1)

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 TABLE III. CURRENT RESPONSE OF 3200W AVERAGE POWER provide reduced current stress and better voltage utilization.
Current EPS modulation Modified modulation Designing transformer with reasonable magnetizing
Performance inductance to leakage inductance ratio is a potential hardware
Peak to peak 𝐼 = 28.09, 𝐼 𝐼 = 27.72, 𝐼 solution for optimizing the performance of DAB converters.
current (A) = 24.6, 𝐼 = 6.26 = 22.34, 𝐼 = 6.86
RMS current 𝐼 = 9.60, 𝐼 𝐼 = 9.26, 𝐼 REFERENCES
(A) = 9.26, 𝐼 = 2.24 = 8.58, 𝐼 = 2.45
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