Diamond Chip
Diamond Chip
B 1EP09EC086
Contents:
Introduction What is a diamond chip?
1.What is a Carbon Nanotube? 2.Classification of Carbon Nanotube.
How is it possible? Properties of Diamond Invention of Diamond chip Carbon Chip Technology Diamond film Comparison of Diamond & Silicon chip Advantages ,Disadvantages and Application of Diamond chip Conclusion
Introduction:
Electronics without Silicon is unbelievable. Now a days, we are using Silicon for the manufacturing of
Electronic Chips.
But, it has many disadvantages , when it is used in power
remarkable increases in computing power and speed, looks unlikely to be capable of sustaining this pace for more than another decade .
Contd
Carbon, a group IV element, has two
temperature.
Contd
So in earlier days they were used widely for the
disadvantages compared to silicon, such as large reverse current, less stability towards temperature etc.
So the industry focused in developing electronic
than Silicon.
Electronic Chip manufactured on a Diamond structural Carbon wafer. OR It can also be defined as the Electronic Chip manufactured using Carbon as the wafer.
The major component using this is Carbon Nanotube.
in 1991.
It is a nano - size cylinder of carbon
atoms.
They are made of one or several
concentric walls in which carbon atoms Fig : Carbon nanotubes made step by step. are arranged in hexagonal pattern, measuring several tens of microns in length and less than a few nanometers in diameter.
ZIGZAG
ARMCHAIR
CHIRAL
Fig: MWNT structures.
Contd
SWNT :
The structure of a SWNT can be conceptualized by wrapping a one-atom-thick layer of graphite called graphene into a cylindrical form. The way the graphene sheet is wrapped is represented by a pair of indices (n, m) called the chiral vector. The integers n and m denote the number of unit vectors along two directions in the honeycomb crystal lattice of graphene. If m = 0, the nanotubes are called "zigzag". If n = m, the nanotubes are called "armchair". Otherwise, they are called "chiral".
Contd
MWNT :
Multi-walled nanotubes (MWNT) consist of multiple rolled layers (concentric tubes) of graphite. In the Russian Doll model, sheets of graphite are arranged in concentric cylinders. In the Parchment model, a single sheet of graphite is rolled in around itself, resembling a scroll of parchment or a rolled newspaper.
Properties of Diamond:
Following are the properties to be known before proceeding with diamond wafer :
Diamond is a good thermal conductor, but a good electrical
insulator. Diamond is an allotrope of carbon and it is the hardest material in nature with the carbon atoms arranged in tetrahedral lattice. It has small toughness. Diamond can also resist voltages up to around 200 volts, compared to around 20 volts for a silicon chip.
How is it possible ?
Pure diamond structural carbon is an electrical insulator, but
1. Boron -> p type doping element. 2. Nitrogen -> n type doping element.
Contd
After doping diamond can act like a semiconductor. The doping process is similar in the case of Silicon chip
manufacturing.
But this process will take more time compared with that
of silicon because it is very difficult to diffuse through strongly bonded diamond structure.
Adding atoms of boron or nitrogen enables the
operates on 8l GHz frequency and is more than twice the speed of Silicon devices.
Developed by the Nippon
the element that sits just above silicon on the Periodic Table can surpass silicon's abilities in thermal performance, frequency range and perhaps even superconductivity.
Of the Carbon technologies, Diamond is probably the
Contd
Two-dimensional carbon--3-angstrom-thick
monolayers called graphene increases the performance by attaining 10 times the electron mobility of silicon.
Contd.
Likewise, one-dimensional carbon--1-nm-diameter
spheres of carbon called fullerenes--could answer silicon's inability to attain high-temperature superconductivity.
DIAMONDS ON FILM :
Wafers with polycrystalline films of diamond are being
proposed as higher-performance replacements for silicon-on-insulator wafers. Diamond transistors have also being proposed for next-generation collision-avoidance automotive radar systems that would operate well in adverse weather/temperature conditions.
Fig : Diamond RF MEMS switch (left) operates at higher frequencies than silicon but can be fabricated alongside the CMOS circuitry (right) driving it, enabling a single chip to handle both functions.
Contd
The two major hurdles faced for commercialization of
single-crystal diamond semiconductors are doping and scaling. 1. Doping : Very few dopants have been found than can introduce the lattice defects needed to change the material from an insulator to a semiconductor. 2. Scaling : The scaling problem refers to the inability to grow single-crystal diamond across wafers much bigger than an inch and a half.
Contd
ADT and sp3 have sidestepped the doping and scaling
problems facing single-crystal carbon films by instead growing wafer-scale polycrystalline diamond films.
Nano-crystalline diamond allows us to solve both the
Contd
Diamond offers 10 times the heat dissipation of silicon and has been successfully implemented.
Merits:
Smaller components are possible.
It works at higher temperature.
Fig: 1000 transistors on a finger tip
Limitations:
However, diamond chips are not expected to completely replace silicon chips for another 20 years because:
Very expensive than Silicon i.e. artificial diamond for
Applications:
In MEMS based applications.
Carbon transistors.
hot-burning engines(power electronic applications). Smaller, speedier computer chips can be made using diamond chips. In automobiles or in aeroplanes.
the size of the tinniest Silicon ones and potentially more efficient can be made using sheets of Carbon just one-tenth of a nanometer thick.
The transistors are made of graphene, a sheet of
Contd
Graphene also conducts electricity faster than most
materials since electrons can travel through in a straight lines between atoms without being scattered. This could ultimately mean faster more efficient components that also requires less power.
Conclusion:
The chips would be most useful in devices located near