Dynamic RAM
Dynamic RAM
3 Dynamic RAM(1)
10.3.1 Introduction
Random access memory (RAM) is the best known form of computer memory. RAM is considered "random access" because you can access any memory cell directly if you know the row and column that intersect at that cell.
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In the most common form of computer memory, dynamic random access memory (DRAM), a transistor and a capacitor are paired to create a memory cell, which represents a single bit of data. The capacitor holds the bit of information -a 0 or a 1. The transistor acts as a switch that lets the control circuitry on the memory chip read the capacitor or change its state.
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A capacitor is like a small bucket that is able to store electrons. To store a 1 in the memory cell, the bucket is filled with electrons. To store a 0, it is emptied. The problem with the capacitor's bucket is that it has a leak. In a matter of a few milliseconds a full bucket becomes empty. Therefore, for dynamic memory to work, either the CPU or the memory controller has to come along and recharge all of the capacitors holding a 1 before they discharge. To do this, the memory controller reads the memory and then writes it right back. This refresh operation happens automatically thousands of times per second.
The capacitor in a dynamic RAM memory cell is like a leaky bucket. It needs to be refreshed periodically or it will discharge to 0.
Memory cells are etched onto a silicon wafer in an array of columns (bitlines) and rows (wordlines). The intersection of a bitline and wordline constitutes the address of the memory cell.
Memory is made up of bits arranged in a twodimensional grid. In this figure, red cells represent 1s and white cells represent 0s.