Tunnel Diode
Tunnel Diode
Tunnel Diode
It was introduced by Leo Esaki in 1958. Heavily-doped p-n junction Width of the depletion layer is very small (about 100 A). It is generally made up of Ge and GaAs It shows tunneling phenomenon
(50 mV)
(B to C)
Iv :- Valley Current
Vp:- Peak Voltage Vv:- Valley Voltage
Cj- junction diffusion capacitance Rn - Negative resistance of the device in the NRR Ls - Series Inductance Rs - Series Resistance - At higher frequencies the series Rs and Ls can be ignored
Reference
Electronic Devices & Circuits by S Salivahanan