Scribd
Upload
139 views

CCD Principals

presentation which give the ideas and principles about the charge coupled device and its different types.

Uploaded by

rahul09990
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPT, PDF, TXT or read online on Scribd
139 views

CCD Principals

presentation which give the ideas and principles about the charge coupled device and its different types.

Uploaded by

rahul09990
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPT, PDF, TXT or read online on Scribd
You are on page 1/ 19

CCD : Charge Coupled Device

By
M.C.Bansal,AE
DDK JAIPUR
What is CCD
A transducer which converts
optical image into electrical signal
Reads the image of picture by
storing a group of charges based on
the image
Grabs light and color to transfer a
visual image into a group of
electrical charges, and then to
screen or video tape.

CCD: Silicon Substrate
1. CCDs are made up of Silicon wafers
2. Each wafer contains several chips
3. Selected chips are then cut from
wafer & packaged for use in a system
CCD : Why Silicon
1. Silicon is Sensitive to Light
2. Superb ability to Detect Light
3. Responds to Visible wave length
spectrum
512 column
383
rows
CCD Sensor IC
One Pixel or Photo Site or Picture
element or one CCD element
26x22 Microns
YFVAKA0146AN
Used in Camera
WV-CD 100
Panasonic Make
Structure of a CCD


Connection pins

Gold bond wires

Bond pads





Silicon chip

Metal,ceramic or plastic package
Image area
Serial register
On-chip amplifier
Resolution in CCD IC
Depends on Number of Photo Sites on an Area
with 3x4 aspect ratio
Example
A color camera CCD (Panasonic WV-CD100)
Use CCD Sensor YFVAKA0146AN
196,096 photo sites arranged in 512 vertical
columns and 383 rows
Size of one Photo site (pixel or CCD element)
is 26 microns by 22 microns
CCD Basics
CCD imaging performs
Exposure which converts light into
electric charge at discrete photo sites
called Pixels
Charge Transfer, moves packet of Charge
within silicon substrate
Charge to Voltage conversion &
Amplification
Construction of CCD
(CCD Element)
V
Electrode
When V=0,
Even distribution of holes (majority carriers)
Holes (carriers)
Oxide (Insulating Layer)
SUBSTRATE (P-TYPE SILICON)
Generation of charge on CCD
+10 V
eeeee
Inversion Layer
Light
Reduced
Depletion
Layer
P
Majority Carrier Holes
Now V = 10 volts,
free holes repelled deeper
into the substrate
a depletion layer is formed
below the electrode
Depletion Layer
When CCD Exposed to light
photo electrons appears in
inversion layer
Depletion layer get reduced
Substrate
+10 V
Charge Coupling or Charge Transfer
Conversion of charge packets takes
place to voltage.
Developed charge packets moves
through the CCD device and delivered to
output amplifier.
In this Process
Charge Coupling
Stable
eeeeeee
Layer
collapsing
V1
5V
0V
V2
0V V2
10V
V2
eeeeeee
Stable
V2 10V
V1
0V
V1
0V

Layer
Growing
V2
5V
V2 goes +ve a
depletion layer
is formed

10V V1
+10 V
V1
eeeeeee
I f V2 more +ve than V1 the charge (e) moves to the new site
Process continues until the whole charge image is routed to the output
stage
eeeeeee
Surface Trap : Smearing effect
surface channel CCDs

I n Basic CCD element,
the surface of the semiconductor where it meets
the oxide layer has a tendency to trap electrons.
This will not allow the complete transfer of
charge and the charge packet will not be emptied
completely to receive the next scan.
These traps are called surface traps.
Buried Channel CCD

Charge transfer well below the
surface to avoid surface traps.
An extra layer of N type material
below the oxide layer
N Type
V
bias
Oxide
P type
GND
Improvement In S/N & Sensitivity
CCD Formats
Point Scanning
Line scanning
Area Scanning
IT (Interline Transfer) Type CCD
Covered with
metallic Film
Transfer of charge
2 2 2 2
Horizontal Transfer CCD
And during horizontal
blanking they are
transferred to the
horizontal transfer CCD
(2) for each scanning
line (1H) in sequence.
Photo Diode
Read out Gate
1 1 1 1
Vertical
Transfer
CCD
During vertical blanking
period charges are first
transferred to vertical
transfer CCD (1)
Signal
Detector
Charges transferred to
the horizontal transfer
CCD are transferred at
horizontal scanning
speed to the signal
detector where they are
converted into a voltage.
FT (Frame Transfer) Type CCD
Pre Amp.
Output
H.Register
Image Area
sensor + Shift
Register
Storage Area
Storage time
of 20 ms or
half field.
Chips are bigger in the size,
almost twice in size due to
additional storage area.
Mask
Storage section is masked
and is not exposed to light
Transfer Of Charge Data
FT device use shutter
during the transfer of
data from light receiving
chip to storage section
of chip at fast rate to
reduce smear & shutter
is synchronized with
vertical blanking period.
Not in use in most of the present day cameras because of larger size,
problem due to use of shutter and problem of smear.
FIT (Frame Interline Transfer)
Type CCD
FIT type CCD consists of
A light receiving CCD
A vertical transfer CCD
A storage CCD
A horizontal transfer CCD
FIT (Frame Interline Transfer) CCD

During vertical blanking light
image convert to charge image by
the photo diode (CCD pixel)
Transfer of charge
Output
Pre-
Amp
H
Register
Pixel
Mask
Storage
Area
V Register
Charge is then transferred to
the vertical transfer CCD
Residual charge (smear) in CCD
has been swept out via drain.
Charges are transferred to
storage CCD at high speed.
Due to high speed of the
charge transfer the smear due
to light will be reduced.
Drain

You might also like