EE105 Fall 2007 Lecture 6, Slide 1 Prof.

Liu, UC Berkeley
Lecture 6
OUTLINE
BJT (contd)
PNP transistor (structure, operation, models)
BJT Amplifiers
General considerations
Reading: Chapter 4.6-5.1
ANNOUNCEMENTS
HW#3, Prob. 2: Re-draw I-V plots for W
B
reduced by a factor of 2.
Discussion Section 103 (Fr 11AM-12PM) will move to 458 Evans.
In case of a major earthquake:
Try to duck/crouch on the floor in front of the seats for cover.
Once the earthquake stops, evacuate the building in an orderly manner.
EE105 Fall 2007 Lecture 6, Slide 2 Prof. Liu, UC Berkeley
Current Flow in a Long-Base PN Junction
The quasi-neutral N-type and P-type regions have low
resistivity, whereas the depletion region has high resistivity.
When an external voltage V
D
is applied across the diode, almost
all of this voltage is dropped across the depletion region.
x
0
J
tot

a

-b

p
n
n
p
A
D
p D
p
n A
n
x
p
n
D
D
L
L
N
N
L N
D
L N
D
J
J
= =
=

0
E
x
A relatively small E-field exists in the
quasi-neutral regions drift current
EE105 Fall 2007 Lecture 6, Slide 3 Prof. Liu, UC Berkeley
Review of BJT Operation (Active Mode)

The emitter junction is forward biased.
Carriers diffuse across the emitter junction; thus, minority-carrier concentrations
are enhanced (by ) at the edges of the emitter-junction depletion region.
More minority carriers are injected into the base vs. emitter, because the
emitter is more heavily doped than the base.
The collector junction is reverse biased (or not strongly forward biased).
Minority-carrier concentrations are ~0 (since ) at the edges of the
emitter-junction depletion region.
The minority-carrier concentration gradient in the quasi-neutral
base region (of width W
B
) results in minority-carrier diffusion
toward the collector junction.
If W
B
is much shorter than the minority-carrier diffusion length, then most of
the minority carriers injected from the emitter will reach the collector-
junction depletion region, and then drift into the quasi-neutral collector.
The collector current is primarily due to carriers collected from the base.

T D
V V
e
/
0
/
~
T D
V V
e
EE105 Fall 2007 Lecture 6, Slide 4 Prof. Liu, UC Berkeley
Common-Emitter Current Gain,
Assuming that no minority-carrier recombination occurs
within the quasi-neutral base region:
The collector current is equal to the current due to minority-carrier
injection from the emitter into the base:


The base current is equal to the current due to minority-carrier
injection from the base into the emitter:


The current gain | can thus be expressed as a function of the
BJT physical parameters:
( ) 1
/
2
=
T BE
V V
B B
i B E
C
e
W N
n qD A
I
( )
|
C
V V
E E
i E E
B
I
e
W N
n qD A
I
T BE
= 1
/
2
B B E
E E B
W N D
W N D
= |
EE105 Fall 2007 Lecture 6, Slide 5 Prof. Liu, UC Berkeley
Impact of Early Effect on BJT Currents

For a fixed value of V
BE
, W
B
decreases with increasing V
CE

(because the width of the collector-junction depletion region
increases with increasing reverse bias), so that the minority-
carrier concentration gradient in the quasi-neutral base region
increases. Thus, I
C
increases (slightly) with increasing V
CE
.



The base current is not impacted:


Thus, the current gain | increases with increasing V
CE
.
|
C
V V
E E
i E E
B
I
e
W N
n qD A
I
T BE
=
/
2
|
|
.
|

\
|
+ ~
A
CE V V
B B
i B E
C
V
V
e
W N
n qD A
I
T BE
1
/
2
T BE
V V
S
A
CE
E
e I
V
V
I
/
0
0
1
|
|
.
|

\
|
+
+
=
|
|
A
CE
A
CE
B B E
E E B
V
V
V
V
W N D
W N D
+ + =
0
| |
EE105 Fall 2007 Lecture 6, Slide 6 Prof. Liu, UC Berkeley
The voltage across an independent voltage source does
not vary with time.
Its small-signal voltage is always zero.
Thus, it is regarded as a short circuit for the purpose of
small-signal analysis.

The current through an independent current source
does not vary with time
Its small-signal current is always zero.
Thus, it is regarded as an open circuit for the purpose of
small-signal analysis.



Small-Signal Models for Independent Sources
EE105 Fall 2007 Lecture 6, Slide 7 Prof. Liu, UC Berkeley
PNP Transistor
The operating principle of a PNP BJT is the same as that
of an NPN BJT. Note that the bias-voltage polarities are
reversed for the PNP device, compared to an NPN device.
The emitter is biased at a higher potential than the base.
The collector is biased at a lower potential than the base.
EE105 Fall 2007 Lecture 6, Slide 8 Prof. Liu, UC Berkeley
NPN vs. PNP BJTs
The directions of current flow and operation modes
for NPN and PNP BJTs are shown below:
EE105 Fall 2007 Lecture 6, Slide 9 Prof. Liu, UC Berkeley
PNP BJT Terminal Currents
B B E
E E B
T
EB
S
A
EC
E
T
EB S
B
A
EC
T
EB
S C
W N D
W N D
V
V
I
V
V
I
V
V I
I
V
V
V
V
I I
=
|
|
.
|

\
|
|
|
.
|

\
|
+
+
=
|
|
.
|

\
|
=
|
|
.
|

\
|
+
|
|
.
|

\
|
=
0
0
0
exp
1
exp
1 exp
|
|
|
|
EE105 Fall 2007 Lecture 6, Slide 10 Prof. Liu, UC Berkeley
Large-Signal Model for PNP BJT
EE105 Fall 2007 Lecture 6, Slide 11 Prof. Liu, UC Berkeley
PNP BJT Biasing
Note that the emitter is biased at a higher potential
than the base and the collector.
EE105 Fall 2007 Lecture 6, Slide 12 Prof. Liu, UC Berkeley
Small-Signal Analysis
EE105 Fall 2007 Lecture 6, Slide 13 Prof. Liu, UC Berkeley
PNP BJT Small-Signal Model
The small-signal model for a PNP transistor is
identical to that of an NPN transistor.
Note that the polarity of the small-signal currents and
voltages are defined to be in the opposite direction with
respect to the large-signal model. This is OK, because the
small-signal model is used only to determine changes in
currents and voltages.
EE105 Fall 2007 Lecture 6, Slide 14 Prof. Liu, UC Berkeley
Small-Signal Model Example 1
EE105 Fall 2007 Lecture 6, Slide 15 Prof. Liu, UC Berkeley
Small-Signal Model Example 2
Note that the small-signal model is identical to that
in the previous example.
EE105 Fall 2007 Lecture 6, Slide 16 Prof. Liu, UC Berkeley
Small-Signal Model Example 3
Note that the small-signal model is identical to that
in the previous examples.
EE105 Fall 2007 Lecture 6, Slide 17 Prof. Liu, UC Berkeley
Small-Signal Model Example 4
EE105 Fall 2007 Lecture 6, Slide 18 Prof. Liu, UC Berkeley
BJT Amplifiers: Overview
EE105 Fall 2007 Lecture 6, Slide 19 Prof. Liu, UC Berkeley
Voltage Amplifier
In an ideal voltage amplifier,
the input impedance is
infinite and the output
impedance is zero.
In reality, the input and
output impedances depart
from their ideal values.
EE105 Fall 2007 Lecture 6, Slide 20 Prof. Liu, UC Berkeley
Input/Output Impedances
The figures below show how input and output
impedances are determined.
All independent sources are set to zero.

x
x
i
v
impedance
EE105 Fall 2007 Lecture 6, Slide 21 Prof. Liu, UC Berkeley
Input Impedance Example
Note that input/output impedances are usually
regarded as small-signal quantities.
The input impedance is obtained by applying a small
change in the input voltage and finding the resultant
change in the input current:

t
r
i
v
x
x
=
EE105 Fall 2007 Lecture 6, Slide 22 Prof. Liu, UC Berkeley
Impedance at a Node
When calculating I/O impedances at a port, we
usually ground one terminal. We often refer to the
impedance seen at a node rather than the
impedance between two nodes (i.e. at a port).
EE105 Fall 2007 Lecture 6, Slide 23 Prof. Liu, UC Berkeley
Impedance seen at the Collector
The impedance seen at the collector is equal to the
intrinsic output impedance of the transistor, if the
emitter is grounded.
o out
r R =
EE105 Fall 2007 Lecture 6, Slide 24 Prof. Liu, UC Berkeley
Impedance seen at the Emitter
The impedance seen at the emitter is approximately
equal to the inverse of its transconductance, if the
base is grounded.
) (
1
1
1
=
~
+
=
A
m
out
m
x
x
V
g
R
r
g
i
v
t
EE105 Fall 2007 Lecture 6, Slide 25 Prof. Liu, UC Berkeley
Summary of BJT Impedances
1. Looking into the base, the impedance is r
t
if the
emitter is (ac) grounded.
2. Looking into the collector, the impedance is r
o
if
emitter is (ac) grounded.
3. Looking into the emitter, the impedance is 1/g
m
if
base is (ac) grounded and Early effect is neglected.